RFM12N40 [RENESAS]
TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,12A I(D),TO-204AA;
| 型号： | RFM12N40 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,12A I(D),TO-204AA |
| 文件： | 总4页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RFM12N35,
RFM12N40
Semiconductor
12A, 350V and 400V, 0.500 Ohm,
N-Channel Power MOSFETs
September 1998
Features
Description
• 12A, 350V and 400V
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
• r
DS(ON)
= 0.500Ω
[ /Title
(RFM12
N35,
Ordering Information
RFM12
N40)
/Sub-
ject
(12A,
350V
and
PART NUMBER
RFM12N35
PACKAGE
BRAND
RFM12N35
RFM12N40
Formerly developmental type TA17434.
TO-204AA
TO-204AA
RFM12N40
Symbol
D
NOTE: When ordering, use the entire part number.
G
400V,
0.500
Ohm,
N-Chan-
nel
S
Packaging
JEDEC TO-204AA
Power
MOS-
FETs)
/Author
()
DRAIN
(FLANGE)
/Key-
words
(12A,
350V
and
SOURCE (PIN 2)
GATE (PIN 1)
400V,
0.500
Ohm,
N-Chan-
nel
Power
MOS-
FETs)
/Cre-
ator ()
/DOCIN
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
File Number 1787.1
Copyright © Harris Corporation 1998
5-1
RFM12N35, RFM12N40
o
Absolute Maximum Ratings
T = 25 C, Unless Otherwise Specified
C
RFM12N35
350
RFM12N40
400
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
V
V
DS
Drain to Gate Voltage (R
GS
= 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . V
350
400
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
12
12
A
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
24
24
A
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
150
150
W
D
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
1.2
W/ C
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . .T , T
J
-55 to 150
-55 to 150
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . T
o
260
260
C
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 125 C.
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
I = 250mA, V = 0V
D
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFM12N35
DSS
GS
350
-
-
-
-
-
-
-
V
V
RFM12N40
400
Gate Threshold Voltage
Zero Gate Voltage Drain Current
V
V
V
V
= V , I = 250µA, (Figure 8)
DS
2
-
4
V
GS(TH)
GS
DS
DS
D
I
= Rated BV
V
= 0
1
µA
µA
DSS
DSS, GS
= 0.8 x Rated BV
V
= 0,
-
25
DSS, GS
o
T
= 125 C
C
Gate to Source Leakage Current
I
V
= ±20V, V
= 0V
-
-
-
-
-
-
-
-
-
-
-
-
-
±100
0.500
3
nA
Ω
GSS
GS
DS
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
r
I
I
I
I
= 12A, V
= 10V, (Figures 6, 7)
-
DS(ON)
D
GS
= 6A, V = 10V
GS
V
-
V
DS(ON)
D
D
= 12A, V
= 10V
-
30
105
480
140
-
6.0
V
GS
Turn-On Delay Time
Rise Time
t
D ≈ 6A, V
= 200V, R = 50Ω,
50
ns
ns
ns
ns
pF
pF
pF
d(ON)
DS
= 10V, R = 33Ω,
G
V
GS
L
t
150
750
200
3000
900
400
0.83
r
(Figures 10, 11, 12)
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
Input Capacitance
C
V
= 0V, V
= 25V, f = 1MHz
DS
ISS
GS
(Figures 9)
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
C
-
OSS
RSS
C
-
o
R
-
C/W
θJC
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
NOTE:
SYMBOL
TEST CONDITIONS
MIN
TYP
-
MAX UNITS
V
I
I
= 6A
-
-
1.4
-
V
SD
SD
t
= 4A, dI /dt = 100A/µs
SD
950
ns
rr
SD
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
5-2
RFM12N35, RFM12N40
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
14
12
10
8
0.6
0.4
6
4
0.2
0
2
0
0
25
50
75
100
125
150
25
50
75
100
125
150
o
o
T
, CASE TEMPERATURE ( C)
T , CASE TEMPERATURE ( C)
C
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
o
25
T
= 25 C
C
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
V
= 20V
= 8-10V
= 7V
GS
V
20
15
10
5
I
(MAX)
GS
D
V
GS
CONTINUOUS
V
= 6V
GS
10
V
= 5V
GS
DC OPERATION
OPERATION IN THIS AREA
MAY BE LIMITED BY r
DS(ON)
1
V
(MAX) = 350V
DSS
RFM12N35
(MAX) = 400V
V
= 4V
GS
V
DSS
RFM12N40
0
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
100
1000
0
2
4
6
8
10
12
14
16
V
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
DS
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
30
20
10
0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
= 10V
V
= 10V
DS
GS
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
o
T
= 125 C
C
o
T
= 25 C
C
o
T
= 25 C
C
o
T
C
= -40 C
o
T
3
= 125 C
C
o
T
= -40 C
C
0
1
2
4
5
6
0
10
20
I , DRAIN CURRENT (A)
30
40
V
, GATE TO SOURCE VOLTAGE (V)
GS
D
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
5-3
RFM12N35, RFM12N40
Typical Performance Curves Unless Otherwise Specified (Continued)
4
3
2
1
0
2
1.5
1
I
= 12A
I = 250µA
D
D
V
= 10V
V
= V
GS
GS DS
0.5
0
-50
0
50
100
o
150
-50
0
50
100
o
150
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
400
4000
10
V
= 0V, f = 1MHz
GS
C
C
C
= C + C
ISS
GS GD
= C
8
RSS
OSS
GD
≈ C
300
200
100
0
GATE
SOURCE
VOLTAGE
3000
2000
1000
0
+ C
GS
DS
V
= BV
DD
DSS
V
= BV
DSS
6
4
2
0
DD
R
= 33.3Ω
L
C
ISS
I
= 2.5mA
= 10V
G(REF)
V
GS
0.75BV
0.50BV
0.25BV
0.75BV
0.50BV
0.25BV
DSS
DSS
DSS
DSS
DSS
DSS
C
OSS
DRAIN SOURCE VOLTAGE
C
RSS
I
I
I
I
G(REF)
G(REF)
0
10
20
30
40
50
20
80
t, TIME (µs)
V
, DRAIN TO SOURCE VOLTAGE (V)
G(ACT)
G(ACT)
DS
NOTE: Refer to Harris Application Notes AN7254 and 7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Test Circuits and Waveforms
t
t
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
r
V
R
L
DS
90%
90%
+
V
DD
10%
10%
R
G
0
-
DUT
90%
50%
V
GS
50%
PULSE WIDTH
10%
V
GS
0
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
5-4
相关型号：
©2020 ICPDF网 联系我们和版权申明