RJE0618JSP-00-J0 [RENESAS]
TRANSISTOR POWER, FET, FET General Purpose Power;
| 型号： | RJE0618JSP-00-J0 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRANSISTOR POWER, FET, FET General Purpose Power |
| 文件： | 总8页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJE0618JSP
–60V, –10A, P Channel Thermal FET
Power Switching
R07DS1147EJ0200
Rev.2.00
Jun 26, 2014
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
•
•
•
•
•
•
•
For Automotive applications
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
High density mounting
AEC-Q101 compliant
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8)
5
6
D
D
D
D
7
8
5
6
7
8
4
3
2
1
1, 2, 3
4
5, 6, 7, 8 Drain
Source
Gate
4
Current
Limitation
Circuit
G
Gate Resistor
Temperature
Sensing
Circuit
Gate
Shut-down
Circuit
Latch
Circuit
1
2
3
S
S
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Symbol
VDSS
VGSS
Ratings
–60
–16
2.5
–10
Unit
V
V
V
A
VGSS
Note3
Drain current
ID
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
IDR
–10
–5.4
125
2.5
150
A
A
mJ
W
°C
°C
Note 2
IAP
EAR
Note 2
Pch Note 1
Tch
Tstg
–55 to +150
Notes: 1 When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
2. Tch = 25°C, Rg ≥ 50 Ω
3. It provides by the current limitation lower bound value.
R07DS1147EJ0200 Rev.2.00
Jun 26, 2014
Page 1 of 7
RJE0618JSP
Preliminary
Typical Operation Characteristics
(Ta = 25°C)
Item
Symbol
VIH
Min
–3.5
—
Typ
—
Max
—
Unit
V
Test Conditions
Input voltage
Input current
VIL
—
–1.2
–100
–50
–10
—
V
IIH1
—
—
μA
μA
μA
mA
mA
°C
V
Vi = –8 V, VDS = 0
(Gate non shut down)
IIH2
—
—
Vi = –3.5 V, VDS = 0
Vi = –1.2 V, VDS = 0
Vi = –8 V, VDS = 0
Vi = –3.5 V, VDS = 0
IIL
—
—
Input current
IIH(sd)1
IIH(sd)2
Tsd
Vop
ID limt
—
–0.8
–0.35
175
—
(Gate shut down)
—
—
Shut down temperature
Gate operation voltage
—
—
Channel temperature
–3.5
–10
–12
—
Drain current
—
A
VGS = –12 V, VDS = –10 V Note 4
(Current limitation value)
Notes; 4. Pulse test
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
ID1
Min
—
Typ
—
Max
–16
–10
—
Unit
Test Conditions
VGS = –3.5 V, VDS = –10 V
VGS = –1.2 V, VDS = –10 V
VGS = –12 V, VDS = –10 V Note 5
ID = –10 mA, VGS = 0
Drain current
A
mA
A
ID2
—
—
ID3
–10
–60
—
Drain to source breakdown
voltage
V(BR)DSS
—
—
V
Gate to source breakdown
voltage
V(BR)GSS
V(BR)GSS
IGSS1
–16
2.5
—
—
—
—
—
V
IG = –800 μA, VDS = 0
IG = 100 μA, VDS = 0
VGS = –8 V, VDS = 0
VGS = –3.5 V, VDS = 0
VGS = –1.2 V, VDS = 0
VGS = 2.4 V, VDS = 0
VGS = –8 V, VDS = 0
VGS = –3.5 V, VDS = 0
VDS = –60 V, VGS = 0
V
Gate to source leak current
—
–100
–50
–10
100
—
μA
μA
μA
μA
mA
mA
μA
μA
IGSS2
—
—
IGSS3
—
—
IGSS4
—
—
Input current (shut down)
IGS(OP)1
IGS(OP)2
IDSS1
—
–0.8
–0.35
—
—
—
Zero gate voltage drain current
Zero gate voltage drain current
—
–10
–10
IDSS2
—
—
VDS = –48 V, VGS = 0,
Ta = 125°C
Gate to source cutoff voltage
Forward transfer admittance
VGS(off)
|yfs|
–1.0
5
—
8.4
–2.1
—
V
S
VDS = –10 V, ID = –1 mA
ID = –5 mA, VDS = –10 V Note 5
ID = –5 A, VGS = –6 V Note 5
ID = –5 A, VGS = –10 V Note 5
VDS = –10 V, VGS = 0, f = 1MHz
VGS = –10 V, ID= –5 A,
RL = 6 Ω
Static drain to source on state
resistance
RDS(on)
RDS(on)
Coss
td(on)
tr
—
—
—
—
—
—
—
—
134
98
180
120
—
mΩ
mΩ
pF
μs
μs
μs
μs
V
Output capacitance
Turn-on delay time
Rise time
444
2.6
—
10.9
2.2
—
Turn-off delay time
Fall time
td(off)
tf
—
3.4
—
Body-drain diode forward
voltage
VDF
–0.92
—
IF = –10 A, VGS = 0 Note 5
Body-drain diode reverse
recovery time
trr
—
100
—
ns
IF = –10 A, VGS = 0
diF/dt = 50 A/μs
Over load shut down
operation time Note 6
tos1
tos2
—
—
2.54
1.35
—
—
ms
ms
VGS = –5 V, VDD = –16 V
VGS = –5 V, VDD = –24 V
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
R07DS1147EJ0200 Rev.2.00
Jun 26, 2014
Page 2 of 7
RJE0618JSP
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
−100
−10
4.0
3.0
2.0
1.0
0
Thermal shut down
operation area
Ta = 25°C
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)
−1
−0.1
Operation
in this area
is limited RDS(on)
−0.01
0
50
100
150
200
−0.01
−0.1
−1
−10
−100
Drain to Source Voltage VDS (V)
Ambient Temperature Ta (°C)
Note 7:
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics
Typical Transfer Characteristics
−10
−8
−10
−8
−4.0 V
−5.0 V
V
DS = −10 V
Pulse Test
−8.0 V
−10.0 V
VGS = −3.5 V
−6
−6
−4
−4
Tc = 150°C
−2
−2
25°C
−40°C
−3
Pulse Test
0
−0
−1
−2
−4
−5
−2
−4
−6
−8
−10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source On State Resistance
vs. Drain Current
1000
−2000
−1600
−1200
−800
Pulse Test
Pulse Test
V
GS = −4 V
−10 V
I
D = −5 A
100
10
−2 A
−1 A
−400
−0
−16
−0 −2 −4 −6 −8 −10 −12 −14
−0.1
−1
−10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
R07DS1147EJ0200 Rev.2.00
Jun 26, 2014
Page 3 of 7
RJE0618JSP
Preliminary
Body-Drain Diode Reverse
Recovery Time
Static Drain to Source On State Resistance
vs. Temperature
250
200
150
1000
I
D = −5 A
Pulse Test
−2 A
−1 A
VGS = −4 V
100
10
−5 A
100
50
ID = −1 A, −2 A
VGS = −10 V
di / dt = 50 A / μs
VGS = 0, Ta = 25°C
0
−50 −25
0
25 50 75 100 125 150
−0.1
−1
−10
Case Temperature Tc (°C)
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
Switching Characteristics
−4
−3
−2
−1
100
10
1
VGS = −5 V
t
t
f
d(off)
t
r
VGS = 0 V, 5 V
t
d(on)
V
GS = −10 V, VDD = −30 V
PW = 300 μs, duty ≤ 1 %
Pulse Test
−1.6
0.1
0
−0.4
−0.8
−1.2
−2.0
−0.1
−1
−10
Drain Current ID (A)
Source to Drain Voltage VSD (V)
Typical Capacitance vs.
Drain to Source Voltage
Forward transfer admittance vs.
Drain Current
100
10000
1000
100
VGS = 0
f = 1 MHz
Ta = –40°C
25°C
10
1
150°C
VDS = –10 V
Pulse Test
0.1
10
–0.1
–1
–10
−0 −10 −20 −30 −40 −50 −60
Drain to Source Voltage VDS (V)
Drain Current ID (A)
R07DS1147EJ0200 Rev.2.00
Jun 26, 2014
Page 4 of 7
RJE0618JSP
Preliminary
Shutdown Case Temperature vs.
Gate to Source Voltage
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
200
180
160
140
−16
−14
−12
−10
−8
VDD = −16 V
−24 V
−6
−4
−2
−0
120
100
ID = −0.5 A
0
−2
−4
−6
−8
−10
0.1
1
10
Gate to Source Voltage VGS (V)
Shutdown Time of Load-Short Test PW (ms)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D = 1
0.5
0.1
0.1
θch − f(t) = γs (t) • θch − f
θch − f = 83.3 °C/ W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.01
PW
T
P
DM
D =
0.001
PW
T
0.0001
100 µ 1 m
10 m 100 m
1
10
100
1000 10000
10 µ
R07DS1147EJ0200 Rev.2.00
Jun 26, 2014
Page 5 of 7
RJE0618JSP
Preliminary
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin
Vin Monitor
10%
D.U.T.
Rg
RL
90%
90%
VDD
= –30 V
Vin
–10 V
90%
10%
10%
Vout
t
t
t
f
d(off)
d(on)
t
r
Avalanche Test Circuit
Avalanche Waveform
L
VDSS
VDSS – VDD
1
2
VDS
Monitor
2
EAR
=
L · IAP ·
IAP
Monitor
0
Rg
VDD
VDD
D. U. T
Vin
–10 V
ID
VDS
IAP
V(BR)DSS
R07DS1147EJ0200 Rev.2.00
Jun 26, 2014
Page 6 of 7
RJE0618JSP
Preliminary
Package Dimensions
Package Name
SOP-8
JEITA Package Code
RENESAS Code
PRSP0008DD-D
Previous Code
FP-8DAV
MASS[Typ.]
0.085g
P-SOP8-3.95 × 4.9-1.27
1
D
*
bp
5
8
1
Index mark
NOTE)
4
Terminal cross section
(Ni/Pd/Au plating)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Z
3
bp
*
M
x
e
Dimension in Millimeters
Reference
Symbol
Min Nom Max
D
E
4.90
3.95
5.3
L1
A2
A1
A
0.10
0.14 0.25
1.75
0.34 0.40 0.46
bp
b1
c
0.15 0.20 0.25
c1
L
0° 8°
5.80 6.10 6.20
1.27
y
HE
e
Detail F
x
0.25
y
0.1
0.75
Z
L
L1
0.40 0.60 1.27
1.08
Ordering Information
Part No.
Quantity
Shipping Container
RJE0618JSP-00-J0
2500 pcs
Taping
R07DS1147EJ0200 Rev.2.00
Jun 26, 2014
Page 7 of 7
Notice
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