RJH60M0DPQ-A0 [RENESAS]
600 V - 22 A - IGBT Application: Inverter; 600 V - 22 A - IGBT应用：变频器
| 型号： | RJH60M0DPQ-A0 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 600 V - 22 A - IGBT Application: Inverter |
| 文件： | 总4页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJH60M0DPQ-A0
600 V - 22 A - IGBT
Application: Inverter
R07DS0535EJ0100
Rev.1.00
Sep 02, 2011
Features
Short circuit withstand time (8 s typ.)
Low collector to emitter saturation voltage
V
CE(sat) = 1.8 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 22 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
1. Gate
2. Collector
3. Emitter
4. Collector
G
1
2
3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
600
±30
45
Unit
V
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
VCES / VR
VGES
V
Collector current
Tc = 25°C
IC
IC
A
Tc = 100°C
22
A
Collector peak current
ic(peak) Note1
90
A
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
IDF
22
A
iDF(peak) Note1
90
A
Note2
PC
140
0.89
2.3
W
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
j-c Note2
j-cd Note2
Tj
°C/ W
°C/ W
°C
°C
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
R07DS0535EJ0100 Rev.1.00
Sep 02, 2011
Page 1 of 3
RJH60M0DPQ-A0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero gate voltage collector current
/ Diode reverse current
ICES / IR
—
—
5
A
VCE = 600 V, VGE = 0
Gate to emitter leak current
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
Qg
—
5
—
—
±1
7
A
V
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 22 A, VGE = 15 V Note3
IC = 45 A, VGE = 15 V Note3
VCE = 25 V
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
—
—
—
—
—
—
—
—
—
—
—
—
6
1.8
2.2
1050
70
32
45
6
2.3
—
—
—
—
—
—
—
—
—
—
—
—
V
V
Input capacitance
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
s
VGE = 0
Output capacitance
Reverse transfer capacitance
Total gate charge
f = 1 MHz
VGE = 15 V
VCE = 300 V
Gate to emitter charge
Gate to collector charge
Switching time
Qge
Qgc
td(on)
tr
IC = 22 A
20
35
20
90
80
8
VCC = 300 V , VGE = 15 V
IC = 22 A
Rg = 5
td(off)
tf
Inductive load
Short circuit withstand time
tsc
Tc = 100 C
VCC 360 V , VGE = 15 V
FRD Forward voltage
VF
trr
—
—
1.4
1.9
—
V
IF = 22 A Note3
FRD reverse recovery time
100
ns
IF = 22 A
diF/dt = 100 A/s
Notes: 3. Pulse test
R07DS0535EJ0100 Rev.1.00
Sep 02, 2011
Page 2 of 3
RJH60M0DPQ-A0
Preliminary
Package Dimension
Package Name
TO-247A
JEITA Package Code
RENESAS Code
PRSS0003ZH-A
Previous Code
MASS[Typ.]
6.14g
Unit: mm
5.02 ± 0.19
3.60 ± 0.1
15.94 ± 0.19
+ 0.1
– 0.2
2.10
13.26
1.27 ± 0.13
5.45
0.71 ± 0.1
2.41
5.45
Ordering Information
Orderable Part Number
Quantity
Shipping Container
Box (Tube)
RJH60M0DPQ-A0-T0
240 pcs
R07DS0535EJ0100 Rev.1.00
Sep 02, 2011
Page 3 of 3
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