RJJ0621DPP-E0#T2 [RENESAS]
Pch Single Power Mosfet -60V -25A 56Mohm To-220Fp, TO-220FP, /Tube;
| 型号： | RJJ0621DPP-E0#T2 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Pch Single Power Mosfet -60V -25A 56Mohm To-220Fp, TO-220FP, /Tube |
| 文件： | 总7页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJJ0621DPP-E0
P Channel Power MOS FET
High Speed Switching
R07DS0797EJ0100
Rev.1.00
Jun 08, 2012
Features
VDSS : –60 V
DS(on) : 56 m (MAX)
ID : –25 A
R
Lead Mount Type (TO-220FP)
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
S
3
1. Gate
2. Drain
3. Source
G 1
1
2
3
2
D
Application
DC-DC converter, Motor control, Solenoid control, etc.
Absolute Maximum Ratings
(Tc = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current (DC)
Symbol
VDSS
VGSS
ID
Ratings
Unit
V
Conditions
VGS = 0 V
–60
+10/–20
–25
V
VDS = 0 V
A
Drain current (Pulsed)*1
ID(pulse)
IAP
–50
A
Avalanche current
–25
A
L = 100 H
Channel dissipation
Pch
25
W
Channel to case thermal impedance
Channel temperature
Storage temperature
ch-c
Tch
5.0
C/W
°C
°C
–55 to +150
–55 to +150
Tstg
Note: 1. Pulse width limited by safe operating area.
R07DS0797EJ0100 Rev.1.00
Jun 08, 2012
Page 1 of 6
RJJ0621DPP-E0
Preliminary
Electrical Characteristics
(Tc = 25°C)
Item
Symbol
V(BR)DSS
IDSS
Min.
–60
—
Typ.
—
Max.
—
Unit
V
Conditions
Drain to source breakdown voltage
Drain to source leakage current
Gate to source leak current
Gate to source leak current
Gate to source cutoff voltage
ID = –10 mA, VGS = 0 V
VDS = –60 V, VGS = 0 V
VGS = +10 V, VDS = 0 V
VGS = –20 V, VDS = 0 V
ID = –1 mA, VDS = –10 V
ID = –12.5 A, VGS = –10 V
ID = –12.5 A, VGS = –4.5 V
VDS = –10 V
—
–1
A
A
A
V
IGSS
—
—
0.1
–0.1
–2.5
56
IGSS
—
—
VGS(off)
RDS(on)
–1.0
—
–1.7
45
Static drain to source on state
resistance
m
m
pF
pF
pF
ns
—
65
95
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
td(on)
tr
—
1550
190
100
15
—
V
GS = 0 V
f = 1 MHz
—
—
—
—
—
—
VDD = –30 V
ID = –12.5 A
—
25
—
ns
V
GS = –10 V
Turn-off delay time
Fall time
td(off)
tf
—
100
50
—
ns
RG = 25
—
—
ns
Body-drain diode forward voltage
VDF
—
–0.9
–1.5
V
IF = –12.5 A, VGS = 0 V
R07DS0797EJ0100 Rev.1.00
Jun 08, 2012
Page 2 of 6
RJJ0621DPP-E0
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
–100
–10
50
40
30
20
10
–1
Operation in
this area is
limited by RDS(on)
–0.1
Ta = 25°C
1 shot Pulse
–0.01
0
50
100
150
200
–0.1
–1
–10
–100
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
–50
–40
–30
–20
–10
–30
–20
–7 V
–6 V
–8 V
VDS = –10 V
Pulse Test
–10 V
–5 V
–4 V
V
GS = –3 V
–10
Tc = 75°C
25°C
Pulse Test
–4 –5
–25°C
0
0
0
–3
–4
–5
–1
–2
–3
–1
–2
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs.Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
1000
150
Pulse Test
Tc = 25°C
Pulse Test
Tc = 25°C
100
100
ID = –25 A
VGS = –4.5 V
–10 V
50
0
–5 A
–12.5 A
10
–1
–10
Drain Current ID (A)
–100
–2
–4
–6
–8
–10
Gate to Source Voltage VGS (V)
R07DS0797EJ0100 Rev.1.00
Jun 08, 2012
Page 3 of 6
RJJ0621DPP-E0
Preliminary
Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
120
100
80
100
10
VGS = –10 V
Pulse Test
ID = –25 A
Tc = –25°C
25°C
75°C
60
–12.5 A
–5 A
40
1
20
0
VDS = –10 V
Pulse Test
0.1
–0.1
–25
0
25 50 75 100 125 150
–1
–10
–100
Drain Current ID (A)
Case Temperature Tc (°C)
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverce Recovery Time
1000
1000
100
VGS = 0
f = 1 MHz
di/dt = –100 A/ μs
GS = 0 V
Tc = 25°C
V
Ciss
100
Coss
10
1
10
1
Crss
–1
–10
–100
–1
–10
–100
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Switching Characteristics
Dynamic Input Characteristics
1000
100
0
0
ID = –25 A
–10 V
–20
–4
–8
VDD = –60 V
–30 V
t
d(off)
t
f
–10 V
–30 V
t
r
–40
t
d(on)
10
1
VDD = –60 V
–60
–80
–12
–16
VGS = –10 V, VDD = –30 V
W = 5 μs, duty ≤ 1%
P
R
G = 25 Ω
–1
–10
–100
0
8
16
24
32
40
Gate Charge Qg (nc)
Drain Current ID (A)
R07DS0797EJ0100 Rev.1.00
Jun 08, 2012
Page 4 of 6
RJJ0621DPP-E0
Preliminary
Reverse Drain Current vs.
Source to Drain Voltage
Avalanche Current vs. Case Temperature
–30
–20
–10
–30
Pulse Test
Tc = 25°C
L = 100 μH
–25
–20
–15
–10
–5 V
–10 V
VGS = 0, 5 V
–5
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Source to Drain Voltage VSDF (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
Tc = 25°C
D = 1
0.5
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 5.0°C/W, Tc = 25°C
0.1
0.01
PW
T
PDM
D =
1shot pulse
PW
T
1 m
10 m
100 m
1
10
100 μ
Pulse Width PW (s)
Switching Time Test Circuit
Switching Time Waveform
10%
Vin
Vout
Vin Monitor
D.U.T.
Monitor
25 Ω
RL
90%
90%
90%
10%
VDD
= –30 V
Vin
–10 V
10%
Vout
t
t
d(off)
t
t
f
d(on)
r
R07DS0797EJ0100 Rev.1.00
Jun 08, 2012
Page 5 of 6
RJJ0621DPP-E0
Preliminary
Package Dimensions
Package Name
TO-220FP
JEITA Package Code
RENESAS Code
PRSS0003AG-A
Previous Code
MASS[Typ.]
1.9g
Unit: mm
10.16 ± 0.20
2.54 ± 0.20
3.18 ± 0.10
1.28 ± 0.30
Max 1.47
2.76 ± 0.20
0.80 ± 0.20
0.50
5.08 ± 0.20
Ordering Information
Orderable Part Number
Quantity
Shipping Container
RJJ0621DPP-E0-T2
50 pcs
Magazine (Tube)
Note: The symbol of 2nd "-" is occasionally presented as "#".
R07DS0797EJ0100 Rev.1.00
Jun 08, 2012
Page 6 of 6
Notice
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