RJK03C5DPA-00-J5A [RENESAS]
Built in SBD N Channel Power MOS FET High Speed Power Switching; 内置SBD N沟道功率MOS FET高速电源开关
| 型号： | RJK03C5DPA-00-J5A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Built in SBD N Channel Power MOS FET High Speed Power Switching |
| 文件： | 总7页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJK03C5DPA
30V, 50A, 2.9m max.
Built in SBD N Channel Power MOS FET
High Speed Power Switching
R07DS0940EJ0400
Rev.4.00
Mar 22, 2013
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5
6
7 8
D D D D
6 7 8
5
1, 2, 3
4
Source
Gate
4
G
1
4 3 2
5, 6, 7, 8 Drain
S
1
S S
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
30
Unit
V
V
±20
50
A
Note1
Drain peak current
ID(pulse)
200
50
A
Body-drain diode reverse drain current
Avalanche current
IDR
A
Note 2
IAP
20
A
Note 2
Avalanche energy
EAR
40
mJ
W
Channel dissipation
Pch Note3
ch-c Note3
Tch
50
Channel to case thermal impedance
Channel temperature
2.5
150
C/W
C
C
Storage temperature
Tstg
–55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
R07DS0940EJ0400 Rev.4.00
Mar 22, 2013
Page 1 of 6
RJK03C5DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
IGSS
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 25A, VGS = 10 V Note4
ID = 25A, VGS = 4.5 V Note4
ID = 25 A, VDS = 5 V Note4
VDS = 10 V
—
± 0.1
1
A
mA
V
IDSS
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
2.5
2.9
4.3
—
Static drain to source on state
resistance
2.4
3.3
95
m
m
S
Forward transfer admittance
Input capacitance
Ciss
Coss
Crss
Rg
3110
690
310
1.8
22
4350
—
pF
pF
pF
V
GS = 0
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Gate Resistance
—
3.6
—
Total gate charge
Qg
nC
nC
nC
ns
ns
ns
ns
V
VDD = 10 V
GS = 4.5 V
ID = 50 A
V
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Qgs
Qgd
td(on)
tr
10
—
5.8
17
—
—
VGS = 10 V, ID = 25 A
VDD 10 V
RL = 0.4
8
—
Turn-off delay time
Fall time
td(off)
tf
58
—
Rg = 4.7
11
—
Body–drain diode forward voltage
VDF
0.39
35
—
IF = 2 A, VGS = 0 Note4
Body–drain diode reverse recovery
time
trr
—
ns
IF =50 A, VGS = 0
diF/ dt = 100 A/ s
Notes: 4. Pulse test
R07DS0940EJ0400 Rev.4.00
Mar 22, 2013
Page 2 of 6
RJK03C5DPA
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
80
1000
100
10
60
40
20
PW = 10 ms
Operation in
this area is
1
limited by RDS(on)
Tc = 25°C
1 shot Pulse
0.1
0
0.1
1
10
100
50
100
150
200
Drain to Source Voltage VDS (V)
Case Temperature Tc (°C)
Typical Output Characteristics
Typical Transfer Characteristics
100
80
60
40
20
100
80
60
40
20
Pulse Test
2.8 V
4.5 V
10 V
VDS = 5 V
Pulse Test
3.0 V
2.6 V
25°C
V
GS = 2.4 V
Tc = 75°C
–25°C
0
0
5
1
2
3
4
2
4
6
8
10
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source On State Resistance
vs. Drain Current
100
200
150
100
50
Pulse Test
Pulse Test
30
10
VGS = 4.5 V
ID = 20 A
3
10 A
5 A
10 V
1
0
4
8
12
16
20
1
3
10
30
100 300 1000
Gate to Source Voltage VGS (V)
Drain Current ID (A)
R07DS0940EJ0400 Rev.4.00
Mar 22, 2013
Page 3 of 6
RJK03C5DPA
Preliminary
Static Drain to Source On State Resistance
vs. Temperature
Typical Capacitance vs.
Drain to Source Voltage
10
10000
3000
1000
Pulse Test
8
Ciss
6
ID = 5 A, 10 A, 20 A
Coss
Crss
300
100
VGS = 4.5 V
4
2
0
5 A, 10 A, 20 A
30
10
10 V
VGS = 0
f = 1 MHz
0
10
20
30
–25
0
25
50 75 100 125 150
Case Temperature Tc
(°C)
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
Dynamic Input Characteristics
100
50
40
30
20
10
0
20
16
12
8
ID = 50 A
Pulse Test
VGS
10 V
80
60
40
20
VDD = 25 V
10 V
5 V
VDS
VGS = 0, –5 V
4
VDD = 25 V
10 V
0
100
0
0.4
0.8
1.2
1.6
2.0
0
20
40
60
80
Gate Charge Qg (nc)
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
50
IAP = 20 A
VDD = 15 V
duty < 0.1%
Rg ≥ 50 Ω
40
30
20
10
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0940EJ0400 Rev.4.00
Mar 22, 2013
Page 4 of 6
RJK03C5DPA
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D = 1
0.5
0.3
0.1
θch − c(t) = γs (t) • θch − c
θch − c = 2.5°C/W, Tc = 25°C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
VDSS
1
2
2
L • IAP •
EAR
=
L
VDSS – VDD
VDS
Monitor
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
15 V
VDD
0
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
Rg
D.U.T.
10%
10%
Vin
RL
Vout
10%
VDS
= 10 V
Vin
10 V
90%
90%
t
t
t
d(off)
t
f
d(on)
r
R07DS0940EJ0400 Rev.4.00
Mar 22, 2013
Page 5 of 6
RJK03C5DPA
Preliminary
Package Dimensions
Package Name
WPAK(3F)
JEITA Package Code
RENESAS Code
PWSN0008DE-A
Previous Code
WPAK(3F)V
MASS[Typ.]
0.075g
Unit: mm
4.23Typ
1.27Typ
0.85Max
5.1 0.2
3.92 0.22
1.27Typ
0.21Typ
0.545Typ
0.42 0.08
4.90 0.1
(Sn plating)
Notice:The reverse pattern of die-pad
support lead described above exists.
Ordering Information
Orderable Part Number
Quantity
Shipping Container
RJK03C5DPA-00-J5A
3000 pcs
Taping
Note: The symbol of 2nd "-" is occasionally presented as "#".
R07DS0940EJ0400 Rev.4.00
Mar 22, 2013
Page 6 of 6
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2013 Renesas Electronics Corporation. All rights reserved.
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