RJK0454DPB-WS#J5 [RENESAS]

Power Field-Effect Transistor;

RJK0454DPB-WS#J5


型号：	RJK0454DPB-WS#J5
厂家：	RENESAS TECHNOLOGY CORP
描述：	Power Field-Effect Transistor
文件：	总7页 (文件大小：138K)
下载：	下载PDF数据表文档文件

RJK0455DPB

Silicon N Channel Power MOS FET Power Switching

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10 RENESAS

RJK0455DPB

40V, 45A, 3.8m max. Silicon N Channel Power MOS FET Power Switching

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5 RENESAS

RJK0455DPB_13

40V, 45A, 3.8m max. Silicon N Channel Power MOS FET Power Switching

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6 RENESAS

RJK0455DPB-00-J5

40V, 45A, 3.8m max. Silicon N Channel Power MOS FET Power Switching

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3 RENESAS

RJK0455DPB-00-J5

Silicon N Channel Power MOS FET Power Switching

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14 RENESAS

RJK0456DPB

Silicon N Channel Power MOS FET Power Switching

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21 RENESAS

RJK0456DPB

40V, 50A, 3.2m max. Silicon N Channel Power MOS FET Power Switching

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4 RENESAS

RJK0456DPB_13

40V, 50A, 3.2m max. Silicon N Channel Power MOS FET Power Switching

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12 RENESAS

RJK0456DPB-00-J5

40V, 50A, 3.2m max. Silicon N Channel Power MOS FET Power Switching

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3 RENESAS

RJK0456DPB-00-J5

Silicon N Channel Power MOS FET Power Switching

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5 RENESAS

RJK0601DPN-E0

N-Channel MOS FET 60 V, 110 A, 3.1 m

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11 RENESAS

RJK0601DPN-E0-T2

N-Channel MOS FET 60 V, 110 A, 3.1 m

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2 RENESAS

RJK0602DPN-E0

N-Channel MOS FET 60 V, 100 A, 3.9 m.

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5 RENESAS

RJK0602DPN-E0-T2

N-Channel MOS FET 60 V, 100 A, 3.9 m.

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2 RENESAS

RJK0603DPN-E0

N-Channel MOS FET 60 V, 80 A, 5.2 m

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16 RENESAS

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