RJK0630JPE-00-J3 [RENESAS]
POWER, FET;型号: | RJK0630JPE-00-J3 |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | POWER, FET |
文件: | 总7页 (文件大小:114K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJK0630JPE
Silicon N Channel MOS FET
High Speed Power Switching
R07DS0340EJ0100
Rev.1.00
Apr 18, 2011
Features
•
•
•
•
•
For Automotive application
AEC-Q101 compliant
Low on-resistance : RDS(on) = 6.2 mΩ typ.
Capable of 4.5 V gate drive
Low input capacitance : Ciss = 2100 pF typ.
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
2, 4
D
4
1. Gate
2. Drain
3. Source
4. Drain
1 G
1
2
3
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
Value
60
Unit
VDSS
V
V
VGSS
±20
75
ID
ID (pulse) Note
IDR
IDR (pulse) Note
A
1
Drain peak current
300
75
A
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
A
1
300
35
A
2
Note
IAP
A
2
Note
Avalanche energy
EAR
105
85
mJ
W
°C
°C
3
Channel dissipation
Pch Note
4
Channel temperature
TchNote
175
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
4. AEC-Q101 compliant
Thermal Impedance Characteristics
•
Channel to case thermal impedance θch-c: 1.76°C/W
R07DS0340EJ0100 Rev.1.00
Apr 18, 2011
Page 1 of 6
RJK0630JPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
IGSS
Min
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
Max
±10
1
Unit
μA
μA
V
Test Conditions
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
VGS = ±20 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 38 A, VGS= 10 V Note
IDSS
—
VGS(off)
RDS(on)
—
2.0
7.5
11.5
—
5
Static drain to source on state
resistance
6.2
8.5
2100
550
420
49
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
5
ID = 38 A, VGS= 4.5 V Note
Input capacitance
Ciss
Coss
Crss
Qg
VDS = 10 V, VGS = 0
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Total gate charge
—
—
—
VDD = 10 V, VGS = 10 V,
ID = 75 A
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Qgs
Qgd
td(on)
tr
7
—
15
—
16
—
ID= 38 A, RL = 2.0 Ω,
VGS = 10 V, RG = 4.7 Ω
17
—
ns
Turn-off delay time
Fall time
td(off)
tf
65
—
ns
18
—
ns
5
Body-drain diode forward voltage
VDF
trr
0.94
45
—
V
IF = 75 A, VGS = 0 Note
Body-drain diode reverse recovery
time
—
ns
IF = 75 A, VGS = 0,
diF/dt = 100 A/μs
Note: 5. Pulse test
R07DS0340EJ0100 Rev.1.00
Apr 18, 2011
Page 2 of 6
RJK0630JPE
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
100
10
100
80
60
40
20
Operation
in this area
is limited RDS(on)
1
0.1
DC Operation
Tc = 25°C
1 shot Pulse
0.01
0
50
100
150
200
0.1
1
10
100
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
Tc = 175°C
100
80
60
40
20
100
10
3.6 V
10 V
4.5 V
25°C
1
VGS = 2.7 V
−40°C
0.1
0.01
VDS = 10 V
Pulse Test
Tc = 25°C
Pulse Test
0.001
0
5
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Static Drain to Source State Resistance
vs. Drain Current
Drain Source Saturation Voltage vs.
Gate to Source Voltage
50
100
ID = 38 A
Pulse Test
Tc = 25°C
Pulse Test
40
30
VGS = 4.5 V
10
20
10
0
Tc = 175°C
10 V
25°C
−40°C
1
20
100
0
4
8
12
16
1
10
Drain Current ID (A)
Gate to Source Voltage VGS (V)
R07DS0340EJ0100 Rev.1.00
Apr 18, 2011
Page 3 of 6
RJK0630JPE
Preliminary
Static Drain to Source on State Resistance
vs. Temperature
Typical Capacitance vs.
Drain to Source Voltage
20
16
12
8
10000
Pulse Test
ID = 38 A
VGS = 4.5 V
3000
1000
Ciss
10 V
Coss
Crss
300
100
4
Tc = 25°C
GS = 0
f = 1 MHz
V
0
−50
0
5
10
15
20
25
30
0
50
100
150
200
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
Dynamic Input Characteristics
50
40
30
20
100
80
60
40
20
Tc = 25°C
D = 75 A
Tc = 25°C
Pulse Test
10 V
VGS
I
16
12
8
VDD = 25 V
10 V
5 V
VDS
20
10
VGS = 0, −5 V
VDD = 25 V
10 V
5 V
4
0
0
0.4
0.8
1.2
1.6
2.0
0
20
40
60
80
100
Gate Charge Qg (nc)
Source to Drain Voltage VSD (V)
Avalanche Energy vs.
Channel Temperature Derating
200
150
100
IAP = 35 A
VDD = 25 V
duty < 0.1 %
Rg ≥ 50 Ω
50
0
25
50
75
100 125 150 175
Channel Temperature Tch (°C)
R07DS0340EJ0100 Rev.1.00
Apr 18, 2011
Page 4 of 6
RJK0630JPE
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
10
D = 1
1
θch – c(t) = γs (t) • θch – c
θch – c = 1.76°C/W, Tc = 25°C
0.1
0.01
PW
T
PDM
D =
PW
T
100 μ
1 m
10 m
100 m
1
10
10 μ
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
VDSS
VDSS VDD
1
2
L
2
L • IAP •
EAR
=
VDS
Monitor
–
IAP
Monitor
V(BR)DSS
Rg
VDD
IAP
D. U. T
VDS
ID
Vin
50 Ω
15 V
VDD
0
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
10%
10%
Vin
RL
Vout
10%
VDS
= 30 V
Vin
10 V
90%
90%
t
t
t
t
f
d(on)
r
d(off)
R07DS0340EJ0100 Rev.1.00
Apr 18, 2011
Page 5 of 6
RJK0630JPE
Preliminary
Package Dimensions
Package Name
LDPAK(S)-(1)
JEITA Package Code
SC-83
RENESAS Code
Previous Code
MASS[Typ.]
Unit: mm
PRSS0004AE-B
LDPAK(S)-(1) / LDPAK(S)-(1)V
1.30g
4.44 0.2
7.8
6.6
10.2 0.3
1.3 0.15
2.49 0.2
+ 0.2
0.1
– 0.1
2.2
1.37 0.2
0.4 0.1
+ 0.2
– 0.1
1.3 0.2
0.86
2.54 0.5
2.54 0.5
Ordering Information
Orderable Part Number
Quantity
Shipping Container
RJK0630JPE-00-J3
1000 pcs
Taping (Sinistrorse)
R07DS0340EJ0100 Rev.1.00
Apr 18, 2011
Page 6 of 6
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