RJK2009DPM [RENESAS]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | RJK2009DPM |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总7页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RJK2009DPM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0474-0200
Rev.2.00
Aug.09.2005
Features
•
•
•
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
D
1. Gate
2. Drain
G
3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
VGSS
ID
Ratings
200
Unit
V
V
Gate to source voltage
±30
Drain current
40
A
Note1
Drain peak current
ID (pulse)
IDR
160
A
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
40
A
Note1
IDR (pulse)
160
A
Note3
IAP
40
A
Note3
Avalanche energy
EAR
106
mJ
W
°C/W
°C
°C
Channel dissipation
Pch Note2
θch-c
Tch
60
Channel to case thermal impedance
Channel temperature
2.08
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.2.00, Aug.09.2004, page 1 of 6
RJK2009DPM
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
IDSS
Min
200
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
ID = 10 mA, VGS = 0
—
1
µA
µA
V
VDS = 200 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 20 A, VDS = 10 V Note4
ID = 20 A, VGS = 10 VNote4
IGSS
—
—
±0.1
4.5
—
VGS(off)
|yfs|
3.0
20
—
33
S
Static drain to source on state
resistance
RDS(on)
—
0.029
0.036
Ω
Input capacitance
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
—
—
—
—
2900
520
66
—
—
—
—
—
—
—
—
—
—
1.4
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = 25 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
40
ID = 20 A, VGS = 10 V,
RL = 5 Ω, Rg = 10 Ω
Rise time
160
120
110
72
Turn-off delay time
td(off)
tf
Fall time
Total gate charge
Qg
VDD = 160 V, VGS = 10 V,
ID = 40 A
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Qgs
Qgd
VDF
trr
16
31
0.9
150
0.8
IF = 40 A, VGS = 0 Note4
ns
µC
IF = 40 A, VGS = 0,
diF/dt = 100 A/µs
Body-drain diode reverse recovery
charge
Qrr
Notes: 4. Pulse test
Rev.2.00, Aug.09.2004, page 2 of 6
RJK2009DPM
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
1000
80
60
40
20
300
100
30
10
Operation in
this area is
limited by RDS(on)
3
1
PW = 10 ms
(1shot)
0.3
0.1
DC Operation
0.03
0.01
(Tc = 25°C)
Ta = 25°C
10
30
100 300
1000
1
3
0
50
100
150
200
Drain to Source Voltage VDS (V)
Case Temperature Tc (°C)
Typical Output Characteristics
Typical Transfer Characteristics
100
80
60
40
20
100
80
60
40
20
10 V
Pulse Test
7 V
7.5 V
V
= 10 V
DS
Pulse Test
6.5 V
6 V
5.5 V
= 5 V
Tc = 75°C
25°C
−25°C
V
GS
0
0
2
4
6
8
10
4
8
12
16
Drain to Source Voltage VDS (V)
20
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
0.1
4
3
V
= 10 V
Pulse Test
GS
0.05
0.02
0.01
2
1
0.005
ID = 40 A
20 A
10 A
0.002
0.001
Pulse Test
0
12
Gate to Source Voltage VGS (V)
4
8
16
20
1
3
10
30
100 300 1000
Drain Current ID (A)
Rev.2.00, Aug.09.2004, page 3 of 6
RJK2009DPM
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
100
0.2
VGS = 10 V
Pulse Test
30
10
Tc = −25°C
0.16
0.12
0.08
25°C
75°C
3
1
20 A
10 A
ID = 40 A
0.04
0
0.3
0.1
VDS = 10 V
Pulse Test
0.1
0.3
1
3
10
30
100
−25
0
25 50 75 100 125 150
Case Temperature Tc (°C)
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1000
500
100000
30000
10000
VGS = 0
f = 1 MHz
200
100
50
Ciss
3000
1000
300
Coss
20
10
5
100
Crss
di / dt = 100 A / µs
30
10
2
1
V
GS = 0, Ta = 25°C
1
3
10
30 100 300 1000
0
50
100
150
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
10000
400
300
200
100
16
12
8
VGS = 10 V, VDD = 100 V
PW = 5 µs, duty < 1 %
RG = 10 Ω
ID = 40 A
VGS
VDD
=
50 V
100 V
160 V
t
f
1000
100
t
r
VDS
t
d(off)
t
f
4
0
VDD = 160 V
100 V
50 V
t
d(on)
t
r
10
20
40
60
80
100
0.1 0.3
1
3
10
30
100
0
Drain Current ID (A)
Gate Charge Qg (nC)
Rev.2.00, Aug.09.2004, page 4 of 6
RJK2009DPM
Reverse Drain Current vs.
Source to Drain Voltage
Gate to Source Cutoff Voltage
vs. Case Temperature
5
4
3
2
100
VDS = 10 V
ID = 10 mA
1 mA
80
60
40
20
V
= 0 V
GS
0.1 mA
10 V
0.4
5 V
1
0
Pulse Test
0
0.8
1.2
1.6
2.0
-25
0
25 50 75 100 125 150
Source to Drain Voltage VSD (V)
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
0.03
0.01
ch – c = 2.08°C/W, Tc = 25°C
PW
T
P
DM
D =
PW
T
0.003
0.001
10 µ
100 µ
1 m
10 m
100 m
1
10
100
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Waveform
Vout
Monitor
90%
D.U.T.
R
L
10%
10%
Vin
10Ω
Vin
10 V
V
DD
= 100 V
Vout
10%
90%
90%
td(off)
td(on)
t
f
tr
Rev.2.00, Aug.09.2004, page 5 of 6
RJK2009DPM
Package Dimensions
JEITA Package Code
SC-93
RENESAS Code
PRSS0003ZA-A
Package Name
MASS[Typ.]
5.2g
TO-3PFM / TO-3PFMV
Unit: mm
5.5 0.3
15.6 0.3
+ 0.4
– 0.2
φ3.2
3.2 0.3
4.0 0.3
2.6
1.6
0.86
0.86
+ 0.2
– 0.1
+ 0.2
0.9
– 0.1
0.66
5.45 0.5
5.45 0.5
Ordering Information
Part Name
Quantity
Shipping Container
RJK2009DPM-E
30 pcs
Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00, Aug.09.2004, page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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