RJK4015DPK-00T0 [RENESAS]
400V - 30A - MOS FET High Speed Power Switching; 400V - 30A - MOS FET高速电源开关
| 型号： | RJK4015DPK-00T0 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 400V - 30A - MOS FET High Speed Power Switching |
| 文件： | 总7页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJK4015DPK
400V - 30A - MOS FET
R07DS0446EJ0200
(Previous: REJ03G1590-0100)
Rev.2.00
High Speed Power Switching
Jun 21, 2012
Features
Low on-resistance
RDS(on) = 0.14 typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
1. Gate
2. Drain (Flange)
3. Source
G
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
VGSS
ID
Ratings
400
Unit
V
Gate to source voltage
30
V
Drain current
30
A
Note1
Drain peak current
ID (pulse)
IDR
90
A
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
30
A
Note1
IDR (pulse)
90
A
Note3
IAP
10
A
Note3
Avalanche energy
EAR
5.71
150
mJ
W
Channel dissipation
Pch Note2
ch-c
Tch
Channel to case thermal impedance
Channel temperature
0.833
150
C/W
C
C
Storage temperature
Tstg
–55 to +150
Notes: 1. PW 10 s, duty cycle 1 %
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
R07DS0446EJ0200 Rev.2.00
Jun 21, 2012
Page 1 of 6
RJK4015DPK
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
IDSS
Min
400
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
ID = 10 mA, VGS = 0
—
1
A
A
V
VDS = 400 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 15 A, VGS = 10 V Note4
IGSS
—
—
±0.1
4.5
VGS(off)
RDS(on)
3.0
—
—
Static drain to source on state
resistance
0.140
0.165
Input capacitance
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
—
—
—
2600
305
38
—
—
—
—
—
—
—
—
—
—
1.5
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = 25 V
VGS = 0
Output capacitance
Reverse transfer capacitance
Turn-on delay time
f = 1 MHz
40
ID = 15 A
VGS = 10 V
Rise time
75
RL = 13.3
Rg = 10
Turn-off delay time
td(off)
tf
102
58
Fall time
Total gate charge
Qg
62.6
13.1
28.5
0.9
VDD = 320 V
V
GS = 10 V
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Qgs
Qgd
VDF
trr
ID = 30 A
IF = 30 A, VGS = 0 Note4
330
ns
IF = 30 A, VGS = 0
diF/dt = 100 A/s
Notes: 4. Pulse test
R07DS0446EJ0200 Rev.2.00
Jun 21, 2012
Page 2 of 6
RJK4015DPK
Preliminary
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
100
10
80
60
40
20
0
Ta = 25°C
Pulse Test
7 V
8 V
6.5 V
6 V
1
Operation in this
area is limited by
RDS(on)
0.1
0.01
VGS = 5.5 V
Tc = 25°C
1 shot
0.1
1
10
100
1000
0
4
8
12
16
20
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Typical Transfer Characteristics
1
100
10
VGS = 10 V
Ta = 25°C
Pulse Test
VDS = 10 V
Pulse Test
Tc = 75°C
25°C
1
0.1
−25°C
0.1
0.01
0.01
0
2
4
6
8
10
1
10
100
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Body-Drain Diode Reverse
Recovery Time (Typical)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
1000
100
10
0.4
V
GS = 10 V
Pulse Test
0.3
0.2
0.1
0
ID = 30 A
15 A
7.5 A
di / dt = 100 A / μs
V
GS = 0, Ta = 25°C
1
10
100
-25
0
25 50 75 100 125 150
Reverse Drain Current IDR (A)
Case Temperature Tc (°C)
R07DS0446EJ0200 Rev.2.00
Jun 21, 2012
Page 3 of 6
RJK4015DPK
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics (Typical)
10000
1000
100
800
16
V
GS = 0
ID = 30 A
Ta = 25 °C
VGS
f = 1 MHz
Ciss
600
400
12
VDD = 320 V
200 V
100 V
8
VDS
Coss
Crss
200
0
4
VDD = 320 V
200 V
100 V
Ta = 25°C
0
10
0
16
32
48
64
80
100
200
Drain to Source Voltage VDS (V)
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
100
5
4
3
VDS = 10 V
VGS = 0
Ta = 25 °C
Pulse Test
80
60
I
D = 10 mA
1 mA
0.1 mA
40
20
0
2
1
0
0
0.4
0.8
1.2
1.6
2.0
-25
0
25 50 75 100 125 150
Case Temperature Tc (°C)
Source to Drain Voltage VSD (V)
R07DS0446EJ0200 Rev.2.00
Jun 21, 2012
Page 4 of 6
RJK4015DPK
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
ch – c (t) =
ch – c = 0.833
γ
s (t) •
θch – c
°
C/W, Tc = 25°C
PW
T
PDM
D =
0.03
0.01
PW
T
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Waveform
Vout
Monitor
90%
D.U.T.
10%
10%
RL
Vin
10 Ω
Vout
10%
VDD
= 200 V
Vin
10 V
90%
90%
t
t
t
t
f
d(on)
r
d(off)
R07DS0446EJ0200 Rev.2.00
Jun 21, 2012
Page 5 of 6
RJK4015DPK
Preliminary
Package Dimensions
Package Name
TO-3P
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
Previous Code
MASS[Typ.]
5.0g
TO-3P / TO-3PV
Unit: mm
4.8 ± 0.2
15.6 ± 0.3
φ
3.2 ± 0.2
1.5
1.6
2.0
1.4 Max
2.8
1.0 ± 0.2
0.6 ± 0.2
0.9
1.0
3.6
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Orderable Part Number
Quantity
Shipping Container
Box (Tube)
RJK4015DPK-00#T0
360 pcs
R07DS0446EJ0200 Rev.2.00
Jun 21, 2012
Page 6 of 6
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