RJL6015DPK-00-T0 [RENESAS]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | RJL6015DPK-00-T0 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总4页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RJL6015DPK
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1818-0100
Rev.1.00
Sep 11, 2009
Features
•
•
•
•
Built-in fast recovery diode
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
1. Gate
2. Drain (Flange)
3. Source
G
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
VGSS
ID
Ratings
Unit
600
V
V
Gate to source voltage
±30
Drain current
19
A
Note1
Drain peak current
ID (pulse)
IDR
57
A
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
19
57
A
Note1
IDR (pulse)
A
Note3
IAP
6
A
Note3
Avalanche energy
EAR
1.9
mJ
W
°C/W
°C
°C
Channel dissipation
Pch Note2
θch-c
Tch
150
Channel to case thermal impedance
Channel temperature
0.833
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
REJ03G1818-0100 Rev.1.00 Sep 11, 2009
Page 1 of 3
RJL6015DPK
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
IDSS
Min
600
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
ID = 10 mA, VGS = 0
—
10
μA
μA
V
VDS = 600 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 9.5 A, VGS = 10 V Note4
IGSS
—
—
±0.1
4.0
VGS(off)
RDS(on)
1.5
—
—
Static drain to source on state
resistance
0.34
0.41
Ω
Input capacitance
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
—
—
—
2370
242
30
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = 25 V
VGS = 0
Output capacitance
Reverse transfer capacitance
Turn-on delay time
f = 1 MHz
—
35
—
ID = 9.5 A
VGS = 10 V
Rise time
17
—
RL = 31.6 Ω
Rg = 10 Ω
Turn-off delay time
td(off)
tf
119
21
—
Fall time
—
Total gate charge
Qg
65
—
VDD = 480 V
V
GS = 10 V
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Qgs
Qgd
VDF
trr
11.3
30.5
1.05
180
—
ID = 19 A
IF = 19 A, VGS = 0 Note4
—
1.75
—
ns
IF = 19 A, VGS = 0
diF/dt = 100 A/μs
Notes: 4. Pulse test
REJ03G1818-0100 Rev.1.00 Sep 11, 2009
Page 2 of 3
RJL6015DPK
Package Dimensions
Package Name
TO-3P
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
Previous Code
MASS[Typ.]
5.0g
TO-3P / TO-3PV
Unit: mm
4.8 0.2
15.6 0.3
φ
3.2 0.2
1.5
1.6
2.0
1.4 Max
2.8
1.0 0.2
0.6 0.2
0.9
1.0
3.6
5.45 0.5
5.45 0.5
Ordering Information
Part No.
Quantity
Shipping Container
RJL6015DPK-00-T0
360 pcs
Box (Tube)
REJ03G1818-0100 Rev.1.00 Sep 11, 2009
Page 3 of 3
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