RJP3055DPP [RENESAS]
Power MOSFETs and IGBT for PDP;
| 型号： | RJP3055DPP |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Power MOSFETs and IGBT for PDP 双极性晶体管 光电二极管 |
| 文件： | 总2页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2010
Renesas Electronics
Power MOSFETs and IGBT for PDP
Merits
Power MOSFET
Low ON resistance
Low Qg
IGBT
Low VCE (sat)
High-speed switching
High avalanche tolerance
PDP System
PDP trends
Power device
X
Y
High breakdown
voltage
High Intensity
Panel
Sustain
circuit
Sustain
circuit
High pressure Gas
Low resistance
High Efficiency
High speed switching
Addressing IC
Optimum FET
Wide MOSFET
line-ups
Low Cost
Timing
control
Power
supply
PDP
Signal
processing
TV/PC
Signal
High Speed IGBT
Package
RDS(on)
IGBT
Product Lineup
Power MOSFET
Maximum Rating
Electrical Characteristics
P/N
VDSS
(V)
ID
(A)
15
30
25
30
35
30
50
25
25
40
20
VGS
VGS(off)
typ(V)
2.0
(V)
±20
±20
±30
±30
±30
±30
±30
±30
±30
±30
±30
typ(mΩ
85
）
100
100
230
230
230
250
250
300
300
300
350
LDPAK
LDPAK
TO-3PFM
TO-3PFM
TO-3PFM
TO-3PFM
TO-3P
H7N1005LS
H7N1004LS
H5N2301PF
H5N2306PF
H5N2305PF
H5N2509P
H5N2503P
H5N3004P
H5N3007LS
H5N3003P
H5N3504P
2.0
3.5
3.5
3.5
3.5
3.5
25
65
48
30
53
40
3.5
2.8
3.5
75
TO-3P
120
60
LDPAK
TO-3P
3.5
100
TO-3P
IGBT (High-speed type)
Maximum Rating
Electrical Charcteristics
VCE(sat) tf
(μS)
P/N
VCES
IC
(A)
30
30
30
30
35
35
40
40
40
50
45
50
45
50
50
VGE
(V)
Package
(V)
400
600
300
300
300
300
300
300
400
270
300
300
300
300
400
(V) typ
ꢀ
ꢀｔｙｐ
±20
±20
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
1.5
1.7
2.0
1.7
1.8
1.5
1.8
1.5
1.6
1.6
1.6
1.6
1.4
1.4
1.7
0.12
0.12
0.15
0.30
0.15
0.30
0.15
0.3
TO-220AB
TO-220AB
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-3P
GN4030V5AB
GN6030V5AB
RJP3053DPP
RJP3063DPP
RJP3054DPP
RJP3064DPP
RJP3055DPP
RJP3065DPP
RJP4065DPP
RJP2557DPK
RJP3056DPK
RJP3057DPK
RJP3066DPK
RJP3067DPK
RJP4067DPK
0.3
0.15
0.15
0.15
0.3
0.3
0.35
TO-3P
TO-3P
TO-3P
TO-3P
TO-3P
©2010. Renesas Electronics Corporation, All rights reserved.
April 2010
Renesas Electronics
Power MOSFETs for Backlight Inverter
Achieve Miniaturization and Higher Efficiency
Features
Merits
Low on resistance, High-speed switching
Low Qg, Low Qgd
High efficiency
Small package, Built-in 2 elements
Mniaturization
Example of Application Circuit (LCD TV, TFT Monitor, Note PC)
Push/Pull
Full Bridge
Half Bridge
Vin
Vin
Vin
Pch
HAT3029R(30V)
Pch
Nch
HAT3029R(30V)
HAT3031R(60V)
Nch&Pch in 1PKG
HAT3031R(60V)
Nch&Pch in 1PKG
HRV103A
HAT2215R(80V)
Dual Nch in 1PKG
HRV103A
Nch
Nch
Nch
Vds(peak)=Vin + V(surge)
Vds(peak)=Vin + V(surge)
Vds(peak)=2Vin + V(surge)
Product Lineup
Max.Ratings
VGs s
V)
RDS(on) (mΩ)
VGS=4.5v(8v) VGS=10v
max
No
Type No
VDSS
V)
ID
A)
Qgd
(nc)
1.8
1.1
3.2
5.8
5.2
Qg
nC)
max
25
（
（
（
（
ｔｙｐ
17
ｔｙｐ
13
18
24
15
20
1
2
3
4
5
30
30
60
-30
-30
±20
±20
±20
±20
±20
11
9
8
-9
-7
16.5
23
7.5
4.4
10
17
11.5
HAT2199R
HAT2208R
HAT2256R
HAT1131R
HAT1132R
24
35
Single
28
41
30
21.5
27.5
31
40
19
25
6
7
30
30
60
80
-60
±20
±20
±20
±20
±20
7.5
6
27
40
40
58
19
27
25
88
40
24
34
1.2
1.1
3.2
1.3
8
4.6
3
HAT2276R
HAT2280R
HAT2275R
HAT2215R
HAT1126R
Nch+Nch
Pch+Pch
8
6.6
3.4
6
29
43
32
10
7.3
37
9
100
60
145
85
115
50
10
30
-30
45
±20
+10/-20
±20
6
-6
40
36
58
53
27
25
44
75
25
60
25
95
34
32
1.1
4.4
0.9
1.5
8
3.1
11.5
3.0
4.9
18
11
12
13
HAT3029R
HAT3037R
HAT3010R
5
55
75
55
-45
60
+10/-20
±20
-3.8
6
95
130
45
95
32
32
-60
60
±20
-5
90
130
43
76
8
18
±20
6.6
-3.4
29
32
2.8
2.2
10
Nch+Pch
14
HAT3031R
-60
+10/-20
120
175
120
6.0
60
-60
80
-80
100
-100
±20
±20
±20
±20
±20
±20
5
55
90
100
200
120
300
80
48
80
90
165
90
240
60
1.4
2.8
1.3
2.4
3.2
3.1
-
-
15
16
17
HAT3038R
HAT3021R
HAT3019R
-3.8
3.4
-2.6
3.5
-2.3
130
145
290
160
500
100
115
210
115
300
7.3
16
15
16
©2010. Renesas Electronics Corporation, All rights reserved.
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