RJP65S06DWT [RENESAS]

650V - 100A - IGBT Application: Inverter; 650V - 100A - IGBT应用：变频器


型号：	RJP65S06DWT
厂家：	RENESAS TECHNOLOGY CORP
描述：	650V - 100A - IGBT Application: Inverter 650V - 100A - IGBT应用：变频器双极性晶体管
文件：	总4页 (文件大小：62K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Datasheet

RJP65S06DWT/RJP65S06DWA

650V - 100A - IGBT

Application: Inverter

R07DS0823EJ0002

Rev.0.02

Aug 09, 2012

Features



Low collector to emitter saturation voltage

_CE(sat)= 1.6 V typ. (at I_C= 100 A, V_GE= 15 V, Ta = 25C)



High speed Switching

Short circuit withstands time (10 s min.)

Outline

Die: RJP65S06DWT-80

Wafer: RJP65S06DWA-80

1 G

1. Gate

2. Collector (The back)

3. Emitter

Absolute Maximum Ratings

(Ta = 25°C)

Item

Collector to emitter voltage

Gate to emitter voltage

Symbol

V_CES

Ratings

650

Unit

V_GES

±30

Note1

Collector current

Tc = 25°C

I_C

200

Note1

Tc = 100°C

I_C

100

Junction temperature

150

C

Notes: 1. This data is a regulated value in evaluation package.

R07DS0823EJ0002 Rev.0.02

Aug 09, 2012

Page 1 of 3

RJP65S06DWT/RJP65S06DWA

Preliminary

Electrical Characteristics (These data are an actual measurement value in evaluation package.)

(Ta = 25°C)

Item

Symbol

I_CES

Min

—

5.0

—

Typ

—

Max

Unit

A

Test Conditions

Zero gate voltage collector current

Gate to emitter leak current

Gate to emitter cutoff voltage

Collector to emitter saturation voltage

Input capacitance

V_CE= 650 V, V_GE= 0

V_GE= ±30 V, V_CE= 0

V_CE= 10 V, I_C= 2 mA

I_C= 100 A, V_GE= 15 V ^Note2

V_CE= 25 V

_GE= 0

f = 1 MHz

V_CC= 300 V ^Note3

I_C= 100 A

I_GES

—

±1

6.8

1.95

—

V_GE(off)

V_CE(sat)

Cies

Coes

Cres

t_d(on)

t_r

—

1.60

8.5

0.35

0.28

Output capacitance

—

Reveres transfer capacitance

Switching time

—

_GE=±15 V

Rg = 10 , Tj = 125 C

Inductive load

t_d(off)

t_f

300

—

Short circuit withstand time

Notes: 2. Pulse test.

t_sc

—

s

V_CC 360 V , V_GE= 15 V

Tj = 150 C

3. Switching time test circuit and waveform are shown below.

Switching Time Test Circuit

Waveform

90%

V_GE

Diode clamp

10%

V_CC

I_C

90%

D.U.T

10%

t_f

10%

t_d(off)

t_d(on)

t_r

R07DS0823EJ0002 Rev.0.02

Aug 09, 2012

Page 2 of 3

RJP65S06DWT/RJP65S06DWA

Preliminary

Die Dimension

1.31

5.09

Emitter bonding pad (1)

Emitter bonding pad (2)

Gate

bonding

pad

Emitter bonding pad (3)

6.46

7.8

Unit: mm

Note 1.

Illustration

Part of white

Definition

Al pattern

Part of dotted line

Part of gray

Bonding area

Final passivation

Note 2. The back of the chip is processed with Au evaporation.

Note 3. Recognition, target and any other patterns which are not related to

Diode operation, may be changed without notice.

Ordering Information

Orderable Part Number

RJP65S06DWA-80#W0

RJP65S06DWT-80#X0

R07DS0823EJ0002 Rev.0.02

Aug 09, 2012

Page 3 of 3

Notice

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Colophon 2.2

RJP65S06DWT [RENESAS]

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