RJP65T43DPM [RENESAS]
Power Factor Correction circuit;
| 型号： | RJP65T43DPM |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Power Factor Correction circuit |
| 文件： | 总8页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJP65T43DPM
R07DS1201EJ0100
Rev.1.00
650V - 20A - IGBT
Apr 23, 2014
Application: Power Factor Correction circuit
Features
•
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)
Isolated package
Trench gate and thin wafer technology (G7H series)
High speed switching
•
•
•
tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 20 A, Rg = 10 Ω, Ta = 25°C, Inductive load)
Operation frequency (20kHz ≤ f ˂ 100kHz)
Not guarantee short circuit withstand time
•
•
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
C
1. Gate
2. Collector
3. Emitter
G
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Symbol
Ratings
650
30
Unit
V
VCES
VGES
V
Note1
Collector current
Tc = 25 °C
IC
40
A
Note1
Tc = 100 °C
IC
20
A
Collector peak current
Collector dissipation
ic(peak)Note1
150
68.8
2.18
175
A
PC
W
Junction to case thermal impedance (IGBT)
Junction temperature
θj-cNote2
Tj Note3
Tstg
°C/W
°C
°C
Storage temperature
–55 to +150
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25°C
3. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
R07DS1201EJ0100 Rev.1.00
Apr 23, 2014
Page 1 of 7
RJP65T43DPM
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Symbol
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
Qg
Min
⎯
⎯
4.0
⎯
—
—
—
—
—
—
⎯
—
—
—
—
—
—
⎯
—
—
—
—
—
—
Typ
⎯
⎯
Max
1
Unit
μA
μA
V
Test Conditions
VCE = 650 V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 0.67 mA
±1
7.0
2.4
—
—
—
—
—
—
⎯
—
—
—
—
—
—
⎯
—
—
—
—
—
—
⎯
Note4
1.8
1550
37
V
IC = 20 A, VGE = 15V
VCE = 25 V
pF
pF
pF
nC
nC
nC
ns
V
GE = 0
f = 1 MHz
Output capacitance
Reveres transfer capacitance
Total gate charge
26
69
VGE = 15 V
VCE = 400 V
IC = 20 A
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Qge
Qgc
td(on)
tr
10
30
30
VCC = 400 V
GE = 15 V
IC = 20 A
V
20
ns
Turn-off delay time
Fall time
td(off)
tf
100
45
ns
Rg = 10 Ω
TC = 25 °C
Inductive load
ns
Turn-on loss energy
Turn-off loss energy
Total switching energy
Turn-on delay time
Rise time
Eon
0.4
0.2
0.6
31
mJ
mJ
mJ
ns
Note5
Eoff
Etotal
td(on)
tr
VCC = 400 V
GE = 15 V
IC = 20 A
V
25
ns
Turn-off delay time
Fall time
td(off)
tf
110
45
ns
Rg = 10 Ω
TC = 150 °C
Inductive load
ns
Turn-on loss energy
Turn-off loss energy
Total switching energy
Notes: 4. Pulse test
Eon
0.54
0.29
0.83
mJ
mJ
mJ
Note5
Eoff
Etotal
5. Switching time test circuit and waveform are shown below.
R07DS1201EJ0100 Rev.1.00
Apr 23, 2014
Page 2 of 7
RJP65T43DPM
Preliminary
Main Characteristics
Collector Dissipation vs.
Maximum DC Collector Current vs.
Case Temperature
Case Temperature
60
50
40
30
20
10
0
80
60
40
20
0
0
25 50 75 100 125 150 175
Case Temperature Tc (°C)
0
25 50 75 100 125 150 175
Case Temperature Tc (°C)
Maximum Safe Operation Area
Typical Transfer Characteristics
1000
100
10
150
125
100
75
150°C
Tc = 25°C
1
50
0.1
25
VCE = 10 V
Pulse Test
Tc = 25°C
Single pulse
0.01
0
0
4
8
12
16
20
1
10
100
1000
Collector to Emitter Voltage VCE (V)
Gate to Emitter Voltage VGE (V)
Typical Output Characteristics
Typical Output Characteristics
160
120
80
160
120
80
Pulse Test
Tc = 150
10 V
Pulse Test
Tc = 25
15 V
11 V
10 V
9.5 V
9.0 V
9.5 V
9.0 V
°C
°
C
15 V
11 V
8.5 V
8.5 V
8.0 V
8.0 V
7.5 V
40
0
40
0
VGE = 7.5 V
VGE = 7.0 V
0
2
4
6
8
10
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
R07DS1201EJ0100 Rev.1.00
Apr 23, 2014
Page 3 of 7
RJP65T43DPM
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
5
Tc = 25
°C
Tc = 150
°C
Pulse Test
Pulse Test
IC = 40 A
20 A
4
3
2
1
0
4
3
2
1
0
IC = 40 A
20 A
10 A
10 A
4
8
12
16
20
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
10
8
3.5
VGE = 15 V
Pulse Test
3.0
2.5
2.0
1.5
1.0
0.5
IC = 40 A
20 A
IC = 10 mA
0.67 mA
6
4
10 A
2
VCE = 10 V
Pulse Test
0
−25
0
25 50 75 100 125 150
−25
0
25 50 75 100 125 150
Case Temparature Tc (°C)
Case Temparature Tc ( C)
°
Typical Capacitance vs.
Collector to Emitter Voltage
Dynamic Input Characteristics (Typical)
10000
1000
100
10
800
16
VCC = 400 V
IC = 20 A
Cies
VGE
Tc = 25°C
600
400
200
0
12
8
Coes
4
VGE = 0 V
f = 1 MHz
Cres
VCE
20
Tc = 25
°C
1
0
100
0
0
50
100 150 200 250 300
40
60
80
Gate Charge Qg (nC)
Collector to Emitter Voltage VCE (V)
R07DS1201EJ0100 Rev.1.00
Apr 23, 2014
Page 4 of 7
RJP65T43DPM
Preliminary
Switching Characteristics (Typical) (1)
Switching Characteristics (Typical) (2)
1000
100
10
10
VCC = 400 V, VGE = 15 V
VCC = 400 V, VGE = 15 V
Rg = 10 Ω, Tc = 150°C
Rg = 10 Ω, Tc = 150°C
Eon
t
f
t
t
d(off)
d(on)
1
Eoff
t
r
0.1
1
10
100
1
10
100
Collector Current IC (A)
(Inductive load)
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
Switching Characteristics (Typical) (3)
VCC = 400 V, VGE = 15 V
1000
VCC = 400 V, VGE = 15 V
C = 20 A, Tc = 150°C
IC = 20 A, Tc = 150°C
I
100
10
1
t
d(off)
Eon
t
f
Eoff
t
d(on)
t
r
0.1
1
10
100
1
10
100
Gate Registance Rg (Ω)
Gate Registance Rg (Ω)
(Inductive load)
(Inductive load)
Switching Characteristics (Typical) (6)
Switching Characteristics (Typical) (5)
1000
100
10
10
VCC = 400 V, VGE = 15 V
VCC = 400 V, VGE = 15 V
IC = 20 A, Rg = 10 Ω
IC = 20 A, Rg = 10 Ω
t
d(off)
1
Eon
Eoff
t
f
t
d(on)
t
r
0.1
25
50
75
100
125
150
25
50
75
100
125
150
Case Temperature Tc (°C)
(Inductive load)
Case Temperature Tc (°C)
(Inductive load)
R07DS1201EJ0100 Rev.1.00
Apr 23, 2014
Page 5 of 7
RJP65T43DPM
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
Tc = 25°C
10
1
D = 1
0.5
0.2
θ – c(t) = γs (t) • θ – c
j
j
θ – c = 2.18°C/W, Tc = 25°C
j
0.1
PW
T
PDM
D =
PW
T
0.01
1 shot pulse
0.01
10 μ
100 μ
1 m
10 m
100 m
1
10
100
Pulse Width PW (s)
Waveform
Switching Time Test Circuit
90%
VGE
Diode clamp
10%
L
VCC
IC
90%
90%
D.U.T
Rg
10%
tf
10%
tr
td(off)
td(on)
R07DS1201EJ0100 Rev.1.00
Apr 23, 2014
Page 6 of 7
RJP65T43DPM
Preliminary
Package Dimensions
Package Name
TO-ꢀPFM
JEITA Package Code
SC-9ꢀ
RENESAS Code
PRSS000ꢀZA-A
Previous Code
MASS[Typ.]
5.2g
TO-ꢀPFM / TO-ꢀPFMV
Unit: mm
5.5 0.ꢀ
15.6 0.ꢀ
+ 0.4
– 0.2
φꢀ.2
ꢀ.2 0.ꢀ
4.0 0.ꢀ
2.6
1.6
0.86
0.86
+ 0.2
– 0.1
+ 0.2
0.9
– 0.1
0.66
5.45 0.5
5.45 0.5
Ordering Information
Orderable Part Number
Quantity
Shipping Container
Box (Tube)
RJP65T43DPM-00#T1
360 pcs
R07DS1201EJ0100 Rev.1.00
Apr 23, 2014
Page 7 of 7
Notice
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