UPA1950TE-A [RENESAS]
2.5A, 12V, 0.205ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-95, 6 PIN;
| 型号： | UPA1950TE-A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 2.5A, 12V, 0.205ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-95, 6 PIN 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1950
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit : mm)
The µPA1950 is a switching device which can be driven
directly by a 1.8 V power source.
+0.1
–0.05
+0.1
–0.06
0.32
0.16
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
6
1
5
2
4
3
0 to 0.1
FEATURES
• 1.8 V drive available
• Low on-state resistance
0.65
RDS(on)1 = 130 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
RDS(on)2 = 176 mΩ MAX. (VGS = –3.0 V, ID = –1.5 A)
RDS(on)3 = 205 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)
RDS(on)4 = 375 mΩ MAX. (VGS = –1.8 V, ID = –1.0 A)
0.95 0.95
1.9
0.9 to 1.1
2.9 ±0.2
6: Drain1
1: Gate1
5: Source1 2: Source2
4: Drain2
3: Gate2
ORDERING INFORMATION
PART NUMBER
PACKAGE
Note
µPA1950TE
SC-95 (Mini Mold Thin Type)
Note Marking: TM
EQUIVALENT CIRCUIT
Drain 1
Drain 2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (2unit) Note2
Total Power Dissipation (1unit) Note2
Channel Temperature
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
–12
m8.0
m2.5
m7.0
1.15
0.57
150
V
V
A
Body
Diode
Body
Diode
Gate 1
Gate
Protection
Diode
Gate 2
A
Gate
Protection
Diode
W
W
°C
Source 1
Source 2
PT2
Tch
Storage Temperature
Tstg
–55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published January 2002 NS CP(K)
Printed in Japan
G15620EJ2V0DS00 (2nd edition)
2001
©
µPA1950
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = –12 V, VGS = 0 V
MIN. TYP. MAX. UNIT
–10
µA
µA
V
IGSS
VGS = m8.0 V, VDS = 0 V
VDS = –10 V, ID = –1.0 mA
VDS = –10 V, ID = –1.5 A
VGS = –4.5 V, ID = –1.5 A
VGS = –3.0 V, ID = –1.5 A
VGS = –2.5 V, ID = –1.5 A
VGS = –1.8 V, ID = –1.0 A
VDS = –10 V
m10
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
Ciss
–0.45
1.0
–1.5
Forward Transfer Admittance
Drain to Source On-state Resistance
S
105
135
160
225
220
90
130
176
205
375
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
VGS = 0 V
Crss
f = 1.0 MHz
40
td(on)
VDD = –6.0 V, ID = –1.5 A
VGS = –4.0 V
15
tr
80
ns
Turn-off Delay Time
Fall Time
td(off)
RG = 10 Ω
150
120
1.9
0.5
0.7
0.86
ns
tf
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
QG
VDD = –10 V
nC
nC
nC
V
QGS
VGS = –4.0 V
ID = –2.5 A
QGD
VF(S-D)
IF = 2.5 A, VGS = 0 V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
I
G
= −2 mA
RL
V
V
GS(−)
R
L
90%
V
GS
Wave Form
V
GS
10%
RG
0
PG.
V
DD
50 Ω
PG.
V
DD
DS(−)
90%
90%
V
0
GS(−)
V
DS
10% 10%
V
DS
Wave Form
0
τ
t
d(on)
t
r
t
d(off)
tf
τ = 1
µs
t
on
toff
Duty Cycle ≤ 1%
2
Data Sheet G15620EJ2V0DS
µPA1950
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
FORWARD BIAS SAFE OPERATING AREA
SAFE OPERATING AREA
−100
−10
−1
Single Pulse
100
2
Mounted on 250 mm x 35 µm Copper Pad
Connected to Drain Electrode in
50 mm x 50 mm x 1.6 mm FR-4 Board
D (pulse)
80
I
V)
Limited
4.5
−
RDS(on)
(VGS
=
ID (DC)
60
40
20
PW=1 ms
10 ms
s
100 m
−0.1
5 s (2 units)
5 s (1 unit)
−0.01
0
−0.1
−1
−10
−100
0
30
60
90
120
150
T
A - Ambient Temperature - ˚C
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
−
10
−100
−10
−1
Pulsed
VDS = −10 V
V
GS = −4.5 V
−
8
TA = 125˚C
−4.0 V
−2.5 V
−
6
−0.1
75˚C
25˚C
−0.01
−0.001
−4
−25˚C
−1.8 V
−2
−0.0001
0
−0.00001
0.0
−0.2
−0.4
−0.6
−0.8
−1.0
0
−0.5
−1.0
−1.5
−2.0
VDS - Drain to Source Voltage - V
VGS - Gate to Sorce Voltage - V
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
100
10
−1.5
V
DS = −10V
V
DS
=
−
10 V
ID = −1 mA
−1.0
−0.5
0.0
T
A
= 125˚C
75˚C
1
0.1
25˚C
−25˚C
0.01
−0.01
−0.1
−10
−100
−1
D - Drain Current - A
150
−50
0
50
100
I
T
ch - Channel Temperature - ˚C
3
Data Sheet G15620EJ2V0DS
µPA1950
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
300
400
350
300
250
200
150
V
GS = −2.5 V
V
GS = −1.8 V
250
200
T
A
= 125˚C
75˚C
T
A
= 125˚C
75˚C
25˚C
150
100
25˚C
−25˚C
−25˚C
−1
- Drain Current - A
−10
−0.01
−0.1
−1
- Drain Current - A
−10
−0.01
−0.1
I
D
I
D
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
150
100
50
250
V
GS = −4.5 V
V
GS = −3.0 V
200
T
A
= 125˚C
75˚C
T
A
= 125˚C
75˚C
150
25˚C
25˚C
−25˚C
−25˚C
100
50
−1
- Drain Current - A
−10
−0.01
−0.1
−1
- Drain Current - A
−10
−0.01
−0.1
I
D
I
D
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
400
400
300
200
ID = −1.5 A
ID = −1.5 A
V
GS = −1.8 V
−2.5 V
300
200
100
0
−3.0 V
−4.5 V
100
0
−
6
0
−4
−8
−2
−50
0
50
100
150
V
GS - Gate to Source Voltage - V
T
ch - Channel Temperature -˚C
4
Data Sheet G15620EJ2V0DS
µPA1950
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
1000
100
1000
f = 1MHz
VGS = 0 V
td(off)
Ciss
t
f
t
r
100
Coss
td(on)
10
Crss
V
DD = −6.0 V
V
GS(on) = −4.0 V
10
−0.1
R = 10 Ω
G
−1
−10
−100
1
−0.1
−1.0
−10
V
DS - Drain to Source Voltage - V
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−5
−4
−3
−2
−1
0
I
D
= −2.5 A
V
DD = 10 V
6 V
10
1
0.1
0.01
-0.4
-0.6
-0.8
-1.0
-1.2
0
1.2
0.4
0.8
1.6
2.0
QG - Gate Charge - nC
V
F(S-D) - Source to Drain Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
Single Pulse
Mounted on FR-4 Board of
P
D
(FET1) : P
D
(FET2) = 1:0
(FET2) = 1:1
50 cm2 x 1.1 mm
PD
(FET1) : P
D
10
1
0.001
0.01
0.1
100
1000
1
10
PW - Pulse Width - s
5
Data Sheet G15620EJ2V0DS
µPA1950
[MEMO]
6
Data Sheet G15620EJ2V0DS
µPA1950
[MEMO]
7
Data Sheet G15620EJ2V0DS
µPA1950
•
The information in this document is current as of January, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
相关型号：
UPA1951TE-A
2.5A, 12V, 0.133ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-95, 6 PIN
RENESAS
UPA1951TE-A
Power Field-Effect Transistor, 2.5A I(D), 12V, 0.133ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SC-95, 6 PIN
NEC
UPA1952TE
2000mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-95, THIN, MINIMOLD PACKAGE-6
RENESAS
©2020 ICPDF网 联系我们和版权申明