UPA1952TE-T1-A [RENESAS]
Pch Dual Power Mosfet -20V -2A 135Mohm 6Pin Tmm/Sc-95, TMM, /Embossed Tape;
| 型号： | UPA1952TE-T1-A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Pch Dual Power Mosfet -20V -2A 135Mohm 6Pin Tmm/Sc-95, TMM, /Embossed Tape |
| 文件： | 总10页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 1st, 2010
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1952
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The µ PA1952 is a switching device, which can be driven
directly by a 1.8 V power source.
+0.1
–0.05
+0.1
0.32
0.16
–0.06
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
6
1
5
2
4
3
0 to 0.1
FEATURES
• 1.8 V drive available
• Low on-state resistance
0.65
RDS(on)1 = 135 mΩ MAX. (VGS = −4.5V, ID = −1.0 A)
RDS(on)2 = 183 mΩ MAX. (VGS = −2.5 V, ID = −1.0 A)
RDS(on)3 = 284 mΩ MAX. (VGS = −1.8 V, ID = −0.5 A)
0.95 0.95
1.9
0.9 to 1.1
2.9 ±0.2
ORDERING INFORMATION
6: Drain 1
1: Gate 1
5: Source 1
4
: Drain 2
3: Gate 2
2: Source 2
PART NUMBER
PACKAGE
µ PA1952TE
SC-95 (Mini Mold Thin Type)
Marking: TP
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
EQUIVALENT CIRCUITS
VDSS
VGSS
ID(DC)
−20
m8.0
m2.0
m8.0
1.15
0.57
150
V
V
Drain 1
Drain 2
A
Body
Body
Diode
Drain Current (pulse) Note1
Gate 1
Gate 2
Diode
ID(pulse)
PT1
A
Total Power Dissipation (2 units) Note2
Total Power Dissipation (1 unit) Note2
Channel Temperature
Gate
Gate
W
W
°C
Protection
Diode
Protection
Diode
Source 1
Source 2
PT2
Tch
Storage Temperature
Tstg
−55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 5000 mm2 x 1.1 mm, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15933EJ1V0DS00 (1st edition)
Date Published August 2002 NS CP(K)
Printed in Japan
©
2001
µ PA1952
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = −20 V, VGS = 0 V
MIN.
TYP.
MAX.
−10
UNIT
µA
µA
V
IGSS
VGS = m8.0 V, VDS = 0 V
VDS = −10 V, ID = −1.0 mA
VDS = −10 V, ID = −1.0 A
VGS = −4.5 V, ID = −1.0 A
VGS = −2.5 V, ID = −1.0 A
VGS = −1.8 V, ID = −0.5 A
VDS = −10 V
m10
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
−0.45
−0.75
4.1
108
137
170
272
60
−1.5
Forward Transfer Admittance
Drain to Source On-state Resistance
1.0
S
135
183
284
mΩ
mΩ
mΩ
pF
pF
pF
ns
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
VGS = 0 V
Crss
f = 1.0 MHz
30
td(on)
VDD = −10 V, ID = −1.0 A
VGS = −4.0 V
29
tr
120
145
148
2.3
0.6
0.6
0.9
ns
Turn-off Delay Time
Fall Time
td(off)
RG = 10 Ω
ns
tf
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
QG
VDD = −16 V
nC
nC
nC
V
QGS
VGS = −4.0 V
ID = −2.0 A
QGD
VF(S-D)
IF = 2.0 A, VGS = 0 V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
I
G
= −2 mA
RL
V
V
GS(−)
R
L
90%
V
GS
Wave Form
V
GS
10%
RG
0
PG.
V
DD
50 Ω
PG.
V
DD
DS(−)
90%
90%
V
0
GS(−)
V
DS
10% 10%
V
DS
Wave Form
0
τ
t
d(on)
t
r
t
d(off)
tf
τ = 1
µ
s
t
on
toff
Duty Cycle ≤ 1%
2
Data Sheet G15933EJ1V0DS
µ PA1952
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
100
80
60
40
20
0
1.2
1
Mounted on FR-4 board of
5000 mm2 x 1.1 mm, t ≤ 5 sec.
0.8
0.6
0.4
0.2
0
2 units
1 unit
0
25
50
75
100 125 150 175
0
25
50
75
100 125 150 175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
- 100
- 10
ID(pulse)
RDS(on) Limited
(VGS = −4.5 V)
ID(DC)
PW = 1 ms
- 1
5 s (1 unit)
10 ms
5 s (2 units)
- 0.1
- 0.01
100 ms
Single pulse
Mounted on FR-4 board
of 5000 mm2 x 1.1 mm
- 0.1
- 1
- 10
- 100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PD (FET1) : PD (FET2) = 1: 0
1000
100
10
PD (FET1) : PD (FET2) = 1: 1
Single pulse
Mounted on FR-4 board of
5000 mm2 x 1.1 mm
1
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
3
Data Sheet G15933EJ1V0DS
µ PA1952
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
- 8
- 6
- 4
- 2
0
- 10
- 1
Pulsed
VDS = −10 V
Pulsed
VGS = −4.5 V
- 0.1
TA = 125°C
75°C
- 0.01
25°C
−25°C
−2.5 V
- 0.001
- 0.0001
- 0.00001
−1.8 V
0
- 0.2 - 0.4 - 0.6 - 0.8
- 1
- 1.2
0
- 0.5
- 1
- 1.5
- 2
- 2.5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
- 1
- 0.9
- 0.8
- 0.7
- 0.6
- 0.5
- 0.4
10
1
VDS = −10 V
Pulsed
VDS = −10 V
D
I
= −1.0 mA
TA = −25°C
25°C
75°C
125°C
0.1
0.01
-50
0
50
100
150
- 0.01
- 0.1
- 1
- 10
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
300
300
Pulsed
Pulsed
VGS = −1.8 V, ID = −0.5 A
250
250
200
VGS = −2.5 V, ID = −1.0 A
200
150
100
150
100
50
ID = −1.0 A
VGS = −4.5 V, ID = −1.0 A
50
-50
0
50
100
150
0
- 2
- 4
- 6
- 8
Tch - Channel Temperature - °C
VGS - Gate to Source Voltage - V
4
Data Sheet G15933EJ1V0DS
µ PA1952
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
300
300
VGS = −4.5 V
Pulsed
VGS = −2.5 V
Pulsed
TA = 125°C
75°C
250
200
150
100
50
250
200
150
100
50
25°C
−25°C
TA = 125°C
75°C
25°C
−25°C
- 0.01
- 0.1
- 1
- 10
- 0.01
- 0.1
- 1
- 10
ID - Drain Current - A
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
SWITCHING CHARACTERISTICS
300
1000
100
10
VGS = −1.8 V
Pulsed
VDD = −10 V
VGS = −4.0 V
RG = 10 Ω
TA = 125°C
250
200
150
100
50
75°C
25°C
td(off)
tf
tr
−25°C
td(on)
- 0.01
- 0.1
- 1
- 10
- 0.1
- 1
ID - Drain Current - A
- 10
ID - Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
10
VGS = 0 V
f = 1.0 MHz
Pulsed
Ciss
1
VGS = 0 V
100
oss
C
0.1
rss
C
10
0.01
- 0.1
- 1
- 10
- 100
0.6
0.8
1
1.2
1.4
VDS - Drain to Source Voltage - V
VF(S-D) - Source to Drain Voltage - V
5
Data Sheet G15933EJ1V0DS
µ PA1952
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
- 5
ID = −2.0 A
- 4
- 3
- 2
- 1
0
VDD = −4.0 V
−10 V
−16 V
0
0.5
1
1.5
2
2.5
3
QG - Gate Change - nC
6
Data Sheet G15933EJ1V0DS
µ PA1952
[MEMO]
7
Data Sheet G15933EJ1V0DS
µ PA1952
•
The information in this document is current as of August, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
相关型号：
UPA1970TE-A
Power Field-Effect Transistor, 2.2A I(D), 20V, 0.107ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SC-95, 6 PIN
NEC
UPA1980TE-T1-AT
Pch Single Power Mosfet -20V -2A 135Mohm 6Pin Tmm/Sc-95, TMM, /Embossed Tape
RENESAS
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