UPA2711GR-E1
更新时间：2024-09-19 04:36:26
品牌：RENESAS
描述：TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,13A I(D),SO
概述
规格参数
数据手册UPA2711GR-E1 概述
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,13A I(D),SO 其他晶体管
UPA2711GR-E1 规格参数
| 是否Rohs认证： | 不符合 | 生命周期： | Obsolete |
| 包装说明： | , | Reach Compliance Code： | unknown |
| 风险等级： | 5.92 | 配置： | Single |
| 最大漏极电流 (Abs) (ID)： | 13 A | FET 技术： | METAL-OXIDE SEMICONDUCTOR |
| 工作模式： | ENHANCEMENT MODE | 最高工作温度： | 150 °C |
| 极性/信道类型： | P-CHANNEL | 最大功率耗散 (Abs)： | 2 W |
| 子类别： | Other Transistors | 表面贴装： | YES |
| Base Number Matches： | 1 |
UPA2711GR-E1 数据手册
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PDF下载DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2711GR
SWITCHING
P-CHANNEL POWER MOS FET
PACKAGE DRAWING (Unit: mm)
DESCRIPTION
The µ PA2711GR is P-Channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
8
5
1, 2, 3
4
: Source
: Gate
5, 6, 7, 8 : Drain
FEATURES
• Low on-state resistance
RDS(on)1 = 9 mΩ MAX. (VGS = −10 V, ID = −6.5 A)
RDS(on)2 = 15 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A)
6.0 ±0.3
4.4
1
4
5.37 MAX.
0.8
RDS(on)3 = 20 mΩ MAX. (VGS = −4.0 V, ID = −6.5 A)
• Low Ciss: Ciss = 2450 pF TYP.
• Small and surface mount package (Power SOP8)
0.5 ±0.2
0.10
1.27 0.78 MAX.
ORDERING INFORMATION
+0.10
0.40
0.12 M
–0.05
PART NUMBER
PACKAGE
µ PA2711GR
Power SOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
–30
m20
m13
m52
2
2
150
V
V
A
EQUIVALENT CIRCUIT
Drain Current (pulse) Note1
A
Drain
Note2
Total Power Dissipation
Total Power Dissipation
W
W
°C
°C
A
Note3
Body
Diode
Gate
Channel Temperature
Storage Temperature
–55 to + 150
−13
Single Avalanche Current Note4
Single Avalanche Energy Note4
Source
EAS
16.9
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
3. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
4. Starting Tch = 25°C, VDD = –15 V, RG = 25 Ω, L = 100 µH, VGS = –20 → 0 V
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G15979EJ1V0DS00 (1st edition)
Date Published March 2004 NS CP(K)
Printed in Japan
2004
µ PA2711GR
ELECTRICAL CHARACTERISTICS (TA = 25°C, Unless otherwise noted, All terminals are connected.)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
µA
µA
V
VDS = −30 V, VGS = 0 V
–1
IDSS
VGS = m20 V, VDS = 0 V
VDS = −10 V, ID = −1 mA
VDS = −10 V, ID = −6.5 A
VGS = −10 V, ID = −6.5 A
VGS = −4.5 V, ID = −6.5 A
VGS = −4.0 V, ID = −6.5 A
VDS = −10 V
m100
–2.5
IGSS
–1.0
10
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Note
Forward Transfer Admittance
22
7.4
10
S
Note
Drain to Source On-state Resistance
9
mΩ
mΩ
mΩ
pF
pF
pF
ns
15
20
12
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
2450
740
410
10
Coss
VGS = 0 V
Crss
f = 1 MHz
VDD = −15 V, ID = −6.5 A
VGS = −10 V
td(on)
tr
ns
15
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 10 Ω
ns
230
130
57
ns
VDD = −24 V
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
nC
nC
nC
V
VGS = −10 V
QGS
6.3
19
ID = −13 A
QGD
VF(S-D)
trr
Note
Body Diode Forward Voltage
IF = 13 A, VGS = 0 V
IF = 13 A, VGS = 0 V
di/dt = 50 A/µs
0.81
62
Reverse Recovery Time
Reverse Recovery Charge
ns
Qrr
nC
31
Note Pulsed
TEST CIRCUIT 2 SWITCHING TIME
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
D.U.T.
L
RG
= 25 Ω
50 Ω
V
V
GS(−)
R
L
90%
V
GS
V
GS
10%
V
DD
PG.
GS = −20 → 0 V
Wave Form
0
RG
V
PG.
V
DD
DS(−)
90%
90%
−
BVDSS
I
AS
V
DS
V
0
GS(−)
V
DS
10% 10%
V
DS
0
Wave Form
I
D
t
d(on)
t
r
t
d(off)
t
f
V
DD
τ
t
on
t
off
τ = 1
µ
s
Starting Tch
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= −2 mA
RL
PG.
V
DD
50 Ω
2
Data Sheet G15979EJ1V0DS
µ PA2711GR
ELECTRICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
100
80
60
40
20
0
2.8
2.4
2
Mounted on ceramic
substrate of
1200 mm2 x 2.2 mm
1.6
1.2
0.8
0.4
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-100
D(pulse)
I
µ
PW = 100
s
RDS(on) Limited
(at VGS 10 V)
=
−
ID(DC)
-10
1 ms
DC
-1
10 ms
Power Dissipation Limited
Single pulse, TA = 25°C
100 ms
-0.1
Mounted on ceramic substrate of
1200 mm2 x 2.2 mm, 1unit
-0.01
-0.01
-0.1
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
-1
-10
-100
1000
100
10
Rth(ch-A) = 62.5°C/W
1
0.1
0.01
Single pulse, T
A
= 25°C
Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
100 µ
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
3
Data Sheet G15979EJ1V0DS
µ PA2711GR
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
-1000
DRAIN TO SOURCE VOLTAGE
-60
-50
-40
-30
-20
-10
0
−4.5 V
V
GS = −10 V
-100
-10
−4.0 V
T =
−
ch
55°C
25°C
75°C
150°C
-1
-0.1
-0.01
Pulsed
Pulsed
-1.2
V
DS = −10 V
0
-0.4
-0.8
0
-1
-2
-3
-4
-5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
-3
-2.5
-2
100
10
1
T
ch = −55°C
25°C
75°C
150°C
-
-1.5
-1
Pulsed
-0.5
0
Pulsed
DS = −10 V
V
DS = −10 V
V
0.1
-0.1
-1
-10
-100
-50
0
50
100
150
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
40
Pulsed
Pulsed
I = −6.5 A
D
25
20
30
20
10
0
V
GS = −4.0 V
−4.5 V
15
10
5
−10 V
0
-0.1
-1
-10
-100
0
-5
-10
-15
-20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet G15979EJ1V0DS
µ PA2711GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
30
25
20
10000
1000
100
C
iss
C
oss
VGS = 4.0 V
−
4.5 V
−
−
15
10
5
10 V
C
rss
V
GS = 0 V
Puls ed
I = 6.5 A
f = 1 MHz
−
D
0
-50
10
-0.01
0
50
100
150
-0.1
-1
-10
-100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
100
10
-30
-20
-10
0
-15
-10
-5
I
D
= −13 A
t
d(off)
V
DD = −24 V
−15 V
t
t
f
−6 V
r
t
d(on)
V
DD = −15 V
GS = −10 V
= 10 Ω
V
GS
V
V
DS
R
G
1
0
-0.1
-1
-10
-100
0
10
20
30
40
50
60
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
1000
100
10
100
10
0 V
V
GS = −10 V
1
0.1
0.01
di/dt = 50 A/µs
V
GS = 0 V
Pulsed
1.2
1
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
IF - Diode Forward Current - A
VF(S-D) - Source to Drain Voltage - V
5
Data Sheet G15979EJ1V0DS
µ PA2711GR
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
-100
-10
-1
120
100
80
60
40
20
0
V
DD = −15 V
= 25 Ω
GS = −20 → 0 V
AS ≤ −13 A
R
G
I
AS = −13 A
V
I
E
AS = 16.9 mJ
V
V
DD = −15 V
GS = −20 → 0 V
R = 25 Ω
Starting Tch = 25°C
G
-0.1
10 m
100 m
1
10
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - °C
L - Inductive Load - H
6
Data Sheet G15979EJ1V0DS
µ PA2711GR
•
The information in this document is current as of March, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
UPA2711GR-E1 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| UPA2711GR-E2 | RENESAS | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,13A I(D),SO | 获取价格 |
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| UPA2712 | ETC | UPA2712GR Data Sheet | Data Sheet[11/2002] | 获取价格 |
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| UPA2712GR | NEC | SWITCHING P-CHANNEL POWER MOSFET | 获取价格 |
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| UPA2713 | ETC | UPA2713GR Data Sheet | Data Sheet[01/2002] | 获取价格 |
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| UPA2713GR | NEC | SWITCHING P-CHANNEL POWER MOSFET | 获取价格 |
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| UPA2713GR | RENESAS | 8000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, POWER, SOP-8 | 获取价格 |
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| UPA2713GR-A | RENESAS | 8000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, POWER, SOP-8 | 获取价格 |
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| UPA2713GR-E1-A | RENESAS | Pch Single Power Mosfet -30V -8A 16Mohm Power Sop8, SOP, /Embossed Tape | 获取价格 |
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