UPA2763T1A-E1-AY [RENESAS]

MOS FIELD EFFECT TRANSISTOR; MOS场效应

UPA2763T1A-E1-AY


型号：	UPA2763T1A-E1-AY
厂家：	RENESAS TECHNOLOGY CORP
描述：	MOS FIELD EFFECT TRANSISTOR MOS场效应
文件：	总8页 (文件大小：245K)
下载：	下载PDF数据表文档文件

UPA2763T1A-E2-AY

MOS FIELD EFFECT TRANSISTOR

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27 RENESAS

UPA2764T1A

N-channel MOSFET 30 V , 130 A , 1.10 m

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18 RENESAS

UPA2764T1A-E2-AY

N-channel MOSFET 30 V , 130 A , 1.10 m

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7 RENESAS

UPA2765T1A

N-channel MOSFET 30 V, 100 A, 1.3 m

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12 RENESAS

UPA2765T1A-E2-AY

N-channel MOSFET 30 V, 100 A, 1.3 m

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7 RENESAS

UPA2766T1A

N-channel MOSFET 30 V, 130 A, 0.88 mA

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23 RENESAS

UPA2766T1A-E2-AY

N-channel MOSFET 30 V, 130 A, 0.88 mA

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7 RENESAS

UPA2770GR-E1-AY

7A, 40V, 0.035ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, POWER, SOP-8

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0 RENESAS

UPA2770GR-E2-AY

7A, 40V, 0.035ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, POWER, SOP-8

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0 RENESAS

UPA2780

UPA2780GR Data Sheet | Data Sheet[04/2003]

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33 ETC

UPA2780GR

SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE

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19 NEC

UPA2780GR-A

Power Field-Effect Transistor, 14A I(D), 30V, 0.0137ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SO-8

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0 NEC

UPA2781

UPA2781GR Data Sheet | Data Sheet[04/2003]

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36 ETC

UPA2781GR

SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE

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17 NEC

UPA2781GR

Power Field-Effect Transistor, 13A I(D), 30V, 0.0172ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8

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0 NEC

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