UPA2782GR-E2 [RENESAS]
UPA2782GR-E2;
| 型号： | UPA2782GR-E2 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | UPA2782GR-E2 |
| 文件： | 总8页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
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Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA2782GR
SWITCHING
N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
DESCRIPTION
The µPA2782GR is N-Channel Power MOSFET, which built a
PACKAGE DRAWING (Unit: mm)
Schottky Barrier Diode inside.
This product is designed for synchronous DC/DC converter
application.
8
5
1, 2, 3
4
; Source
; Gate
5, 6, 7, 8 ; Drain
FEATURES
• Built a Schottky Barrier Diode
• Low on-state resistance
6.0 ±0.3
4.4
1
4
RDS(on)1 = 11 mΩ TYP. (VGS = 10 V, ID = 5.5 A)
RDS(on)2 = 16 mΩ TYP. (VGS = 4.5 V, ID = 5.5 A)
RDS(on)3 = 19 mΩ TYP. (VGS = 4.0 V, ID = 5.5 A)
• Low Ciss: Ciss = 660 pF TYP.
5.37 MAX.
0.8
0.5 ±0.2
• Small and surface mount package (Power SOP8)
0.10
1.27 0.78 MAX.
+0.10
–0.05
0.40
0.12 M
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
µ PA2782GR
ABSOLUTE MAXIMUM RATINGS (TA = 25°C. All terminals are connected.)
EQUIVALENT CIRCUIT
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) [MOSFET]
VDSS
VGSS
ID(DC)
ID(pulse)
IF(AV)
PT
30
V
V
±20
Drain
±11
A
Drain Current (pulse) Note1
±44
A
Average Forward Current Note2 [SCHOTTKY]
Total Power Dissipation Note3 [MOSFET]
Total Power Dissipation Note3 [SCHOTTKY]
Channel & Junction Temperature
Storage Temperature
Gate
2.5
A
Schottky
Diode
2
W
W
°C
°C
PT
1
Gate
Protection
Diode
Source
Tch, Tj
Tstg
150
−55 to + 150
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Rectangle wave, 50% Duty Cycle
3. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16421EJ1V0DS00 (1st edition)
Date Published April 2003 NS CP(K)
Printed in Japan
2002
µPA2782GR
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless other wise noted. All terminals are connected.)
CHARACTERISTICS
SYMBOL
IDSS
TEST CONDITIONS
VDS = 24 V, VGS = 0 V
MIN.
TYP.
MAX.
50
UNIT
µA
mA
µA
V
Zero Gate Voltage Drain Current Note
VDS = 24 V, VGS = 0 V, TA = 125°C
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 5.5 A
VGS = 4.5 V, ID = 5.5 A
VGS = 4.0 V, ID = 5.5 A
VDS = 10 V
10
Gate Leakage Current
IGSS
VGS(off)
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
±10
2.5
15
Gate Cut-off Voltage
1.0
Drain to Source On-state Resistance Note
11
16
mΩ
mΩ
mΩ
pF
pF
pF
ns
22.5
29
19
Input Capacitance
660
340
83
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
VGS = 0 V
Crss
f = 1 MHz
td(on)
VDD = 15 V, ID = 5.5 A
VGS = 10 V
9
tr
5
ns
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 10 Ω
29
ns
6
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
QG
VDD = 15 V
7.1
2.1
3.1
0.45
0.37
25
nC
nC
nC
V
QGS
VGS = 5 V
QGD
ID = 11 A
VF(S-D)
IF = 1 A, VGS = 0 V
IF = 1 A, VGS = 0 V, TA = 125°C
IF = 7 A, VGS = 0 V
di/dt = 100 A/µs
0.5
V
Reverse Recovery Time
Reverse Recovery Charge
trr
ns
Qrr
14
nC
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
I
G
= 2 mA
RL
V
V
GS
R
L
90%
V
GS
Wave Form
V
GS
10%
RG
0
PG.
V
DD
50 Ω
PG.
V
DD
DS
90%
90%
V
0
GS
V
DS
10% 10%
V
DS
Wave Form
0
τ
t
d(on)
t
r
t
d(off)
tf
τ = 1 µs
t
on
toff
Duty Cycle ≤ 1%
2
Data Sheet G16421EJ1V0DS
µPA2782GR
TYPICAL CHARACTERISTICS (TA = 25°C. All terminals are connected.)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
100
80
60
40
20
0
2.8
2.4
2
Mounted on ceramic substrate of
1200 mm2 x 2.2 mm
MOSFET
1.6
1.2
0.8
0.4
0
SCHOTTKY
0
25
50
75
100
125
150
175
0
20
40
60
80
100 120 140 160
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
10
D(pulse)
I
PW = 100 µs
D(DC)
I
1 ms
DC
DS(on)
GS
R
Limited
10 ms
(at V = 10 V)
1
100 ms
Power Dissipation Limited
0.1
Single pulse
Mounted on ceramic substrate of
1200 mm2 x 2.2 mm
0.01
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (MOSFET)
1000
100
10
Rth(ch-A) = 62.5°C/W
1
Mounted on ceramic substrate of 1200 mm2 × 2.2 mm
Single pulse
0.1
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
3
Data Sheet G16421EJ1V0DS
µPA2782GR
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (SCHOTTKY)
1000
100
10
Rth(j-A) = 125°C/W
1
Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
Single pulse
0.1
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
50
45
40
35
30
25
20
15
10
5
3
2.5
2
Pulsed
VDS = 10 V
ID = 1 mA
GS
V
= 10 V
4.5 V
4.0 V
1.5
1
0.5
0
0
0
0.5
1
1.5
2
- 50
0
50
100
150
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
30
Pulsed
Pulsed
25
20
15
10
5
25
20
VGS = 4.0 V
4.5 V
15
ID = 5.5 A
10 V
10
5
0
0
0.1
1
10
100
0
5
10
15
20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet G16421EJ1V0DS
µPA2782GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
40
10000
1000
100
Pulsed
GS
V
= 0 V
35
30
f = 1 MHz
VGS = 4.0 V
25
Ciss
4.5 V
20
15
10
5
Coss
10 V
Crss
10
0
0.01
0.1
1
10
100
- 50
0
50
100
150
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
100
10
30
25
20
15
10
5
6
5
4
3
2
1
0
D
I
= 11 A
VDD = 15 V
VGS = 10 V
DD
V
= 24 V
15 V
6 V
Ω
RG = 10
GS
V
td(off)
t
tf
tr
d(on)
DS
V
0
1
0
2
4
6
8
0.1
1
10
100
QG - Gate Charge - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
SOURCE TO DRAIN DIODE
REVERSE CURRENT
100
10
1
100000
10000
1000
100
µ
125°C
A
T
= 25°C
DS
V
= 30 V
10
1
24 V
0.1
GS
V
= 0 V
Pulsed
0.01
0.1
- 50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
Tj - Junction Temperature - °C
VF(S-D) - Source to Drain Voltage - V
5
Data Sheet G16421EJ1V0DS
µPA2782GR
•
The information in this document is current as of April, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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