UPA573CT [RENESAS]
P-CHANNEL MOSFET FOR SWITCHING;型号: | UPA573CT |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | P-CHANNEL MOSFET FOR SWITCHING 开关 |
文件: | 总8页 (文件大小:198K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Data Sheet
µPA573CT
P-CHANNEL MOSFET FOR SWITCHING
R07DS1280EJ0200
Rev.2.00
Jul 08, 2015
Description
The µPA573CT, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven
directly by a 4.5 V power source.
Features
Two MOSFET circuits (Two source common)
Directly driven by a 4.5 V power source.
Low on-state resistance
RDS(on)1 = 2.7 MAX. (VGS = -10 V, ID = -100 mA)
RDS(on)2 = 3.2 MAX. (VGS = -4.5 V, ID = -50 mA)
Ordering Information
Part Number
Lead Plating
Packing
Package
µPA573CT-T1-A/AT
-A : Sn-Bi , -AT : Pure Sn
3000p/Reel
SC-88A (5pSSP)
Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Marking UH
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
VDSS
VGSS
ID(DC)
ID(pulse)
PT
-60
∓20
V
V
∓100
mA
mA
mW
C
Drain Current (pulse) Note
∓200
Total Power Dissipation
200 (Total)
150
Channel Temperature
Tch
Storage Temperature
Tstg
55 to 150
C
Note PW 10 s, Duty Cycle 1%
R07DS1280EJ0200 Rev.2.00
Jul 08, 2015
Page 1 of 6
µPA573CT
Electrical Characteristics (TA = 25C)
Characteristics
Symbol
Test Conditions
VDS = -60 V, VGS = 0 V
MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current
Gate Leakage Current
IDSS
IGSS
-1
A
A
V
VGS = ∓20 V, VDS = 0 V
VDS = VGS, ID = -250 A
VDS = -10 V, ID = -100 mA
VGS = -10 V, ID = -100 mA
VGS = -4.5 V, ID = -50 mA
VDS = -10 V,
∓10
-2.5
Gate to Source Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
-1.0
150
Note
Forward Transfer Admittance
mS
Note
Drain to Source On-state Resistance
1.8
2.0
9
2.7
3.2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
pF
pF
pF
ns
ns
ns
ns
nC
V
Coss
Crss
VGS = 0 V,
7
f = 1.0 MHz
2
td(on)
tr
VDD = -10 V,
75
ID = -200 mA,
110
900
400
2.2
0.86
Turn-off Delay Time
Fall Time
td(off)
tf
VGS = -10 V,
RG = 10
Total Gate Charge
QG
ID = -200 mA, VDD = -25 V, VGS = -10 V
IF = -200 mA, VGS = 0 V
Note
Body Diode Forward Voltage
VF(S-D)
Note Pulsed
Test Circuit Switching Time
R07DS1280EJ0200 Rev.2.00
Jul 08, 2015
Page 2 of 6
µPA573CT
Typical Characteristics (TA = 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
100
80
60
40
20
0
350
300
250
200
150
100
50
Free air
Total
Per one unit
0
0
25
50
75
100
125
150
0
25
50
75 100 125 150 175
TA – Ambient Temperature - C
TA – Ambient Temperature - C
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
–200
–180
–160
–140
–1
–0.1
V
DS= –5 V
V
GS = –10 V
Pulsed
–4.5 V
–120
–100
–80
–0.01
T = 125°C
A
100°C
75°C
–60
–0.001
–0.0001
25°C
–40
–25°C
–20
0
Pulsed
0
–1
–2
0
–1
–2
–3
–4
–5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage – V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
–3
–2.5
–2
10
1
V
DS = VGS
ID = –250 µA
TA = 125°C
100°C
75°C
25°C
0.1
–25°C
–1.5
VDS= –10 V
Pulsed
–
1
0.01
-50
0
50
100
150
–0.01
–0.1
ID - Drain Current - A
–1
Tch - Channel Temperature - C
R07DS1280EJ0200 Rev.2.00
Jul 08, 2015
Page 3 of 6
µPA573CT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
10
Pulsed
Pulsed
ID = –100 mA
5
5
VGS
=
–
4.5 V
–50 mA
–10 V
0
0
–0.001
–0.01
–0.1
–
1
–10
0
–2
–4
–6
–8
–10
–12
ID - Drain Current - A
VGS – Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
5
100
Pulsed
4
3
2
1
0
C
iss
10
1
V
GS
=
–
4.5 V, I = –50 mA
D
C
oss
rss
–
10 V, –100 mA
C
V
GS = 0 V
f = 1.0 MHz
0.1
-25
0
25
50
75
100
125
–0.1
–1
–10
–100
Tch - Channel Temperature - C
VDS - Drain to Source Voltage – V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
–10
–8
–6
–4
–2
1000
100
10
td(off)
t
f
V
DD = –48 V
t
r
–30 V
t
d(on)
–25 V
ID = –200 mA
V
R
DD = –10 V, VGS = –10 V
= 10 Ω
0
0
G
1
1
2
3
–0.001
–0.01
–0.1
–1
QG – Gate Chage - nC
ID - Drain Current - A
R07DS1280EJ0200 Rev.2.00
Jul 08, 2015
Page 4 of 6
µPA573CT
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
FORWARD BIAS SAFE OPERATING AREA
–
1
–1
ID(pulse)= –200mA
10ms
–0.1
ID(DC)= –100mA
–0.1
100ms
–
0.01
DC Power
Dissipation Limited
TA=25°C
Single Pulse
–
0.001
–0.01
0
–0.2 –0.4 –0.6 –0.8
–1
–1.2
–1
–10
–100
VF(S-D) – Source to Drain Voltage - V
TA – Ambient Temperature - C
R07DS1280EJ0200 Rev.2.00
Jul 08, 2015
Page 5 of 6
µPA573CT
Package Drawings (Unit: mm)
SC-88A (5pSSP)
Equivalent Circuit
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
R07DS1280EJ0200 Rev.2.00
Jul 08, 2015
Page 6 of 6
µPA573CT
Description
Summary
Rev.
1.00
2.00
Date
Page
Sep , 2013
Jun, 2015
First Edition Issued
Changed all graphs
3, 4, 5
3
5
Added TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
Added FORWARD BIAS SAFE OPERATING AREA
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Colophon 5.0
相关型号:
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