UPA607T-AT [RENESAS]
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,50V V(BR)DSS,100MA I(D),SC-74;型号: | UPA607T-AT |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,50V V(BR)DSS,100MA I(D),SC-74 |
文件: | 总8页 (文件大小:173K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
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April 1st, 2010
Renesas Electronics Corporation
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA607T
P-CHANNEL MOS FET (6-PIN 2 CIRCUITS)
FOR SWITCHING
The µPA607T is a mini-mold device provided with two
PACKAGE DIMENSIONS (in millimeters)
MOS FET elements. It achieves high-density mounting
and saves mounting costs.
+0.1
–0.05
+0.1
–0.06
0.32
0.16
FEATURES
•
Two MOS FET elements in package the same size as
SC-59
0 to 0.1
•
•
Complement to µPA606T
Automatic mounting supported
0.8
0.95 0.95
1.1 to 1.4
1.9
2.9 ±0.2
PIN CONNECTION
6
5
4
1. Source 1
2. Gate 1
3. Drain 2
4. Source 2
5. Gate 2
6. Drain 1
1
2
3
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)*
PT
RATINGS
–50
UNIT
V
+16
V
–100
mA
mA
mW
˚C
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
–200
300 (Total)
150
Tch
Tstg
–55 to +150
˚C
* PW ≤ 10 ms, Duty Cycle ≤ 50 %
Document No. G11254EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996
©
µPA607T
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
Drain Cut-off Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Input Capacitance
SYMBOL
TEST CONDITIONS
VDS = –50 V, VGS = 0
MIN.
TYP.
–
MAX.
–1.0
+1.0
–2.5
–
UNIT
µA
µA
V
IDSS
–
–
IGSS
VGS = +16 V, VDS = 0
–
VGS(off)
|yfs|
VDS = –5.0 V, ID = –1.0 µA
VDS = –5.0 V, ID = –10 mA
VGS = –4.0 V, ID = –10 mA
VGS = –10 V, ID = –10 mA
VDS = –5.0 V, VGS = 0, f = 1.0 MHz
–1.5
15
–
–1.9
–
mS
Ω
RDS(on)1
RDS(on)2
Ciss
60
40
15
10
1
100
60
–
–
Ω
–
pF
pF
pF
ns
ns
ns
ns
Output Capacitance
Coss
–
–
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Crss
–
–
td(on)
tr
VGS(on) = –5.0 V, RG = 10 Ω,
–
45
75
25
80
–
VDD = –5.0 V, ID = –10 mA, RL = 500 Ω
–
–
Turn-Off Delay Time
Fall Time
td(off)
tf
–
–
–
–
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS
VGS
Gate
voltage
waveform
RL
DUT
10 %
VGS(ON)
90 %
VDD
I
D
R
G
t
d(on)
t
r
t
d(off)
t
f
PG.
Drain
current
waveform
0
10 %
10 %
I
D
0
VGS
90 %
90 %
τ
τ = 1µs
Duty Cycle ≤ 1 %
2
µPA607T
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
240
200
160
120
80
100
80
60
40
20
40
0
20
40
60
80 100 120 140 160
0
30
60
90
120 150 180 210
T
C
- Case Temperature - ˚C
T
A
- Ambient Temperature - ˚C
DRAIN CURRENT vs. DRAIN TO
SOURCE VOLTAGE
TRANSFER CHARACTERISTICS
–120
–100
–80
–100
–10
–1
–10 V
Pulsed
measurement
–8 V
–6 V
–60
TA = 150 ˚C
–0.1
75 ˚C
–40
V
GS = –4 V
25 ˚C
–0.01
–20
–25 ˚C
V
DS = –5.0 V
Pulsed
measurement
–0.001
0
–2
–4
–6
–8
–10 –12 –14
0
–5
–10
–15
V
DS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
–2.4
–2.2
–2.0
–1.8
–1.6
100
50
V
DS = –5.0 V
V
DS = –5.0 V
= –1 µA
Pulsed
I
D
measurement
20
10
5
T = –25 ˚C
A
25 ˚C
75 ˚C
–1.4
–1.2
150 ˚C
2
1
–30
0
30
60
90
120
150
–1
–2
–5
–10 –20
–50 –100
T
ch - Channel Temperature - ˚C
ID - Drain Current - mA
3
µPA607T
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE
vs.DRAIN CURRENT
100
80
60
40
20
150
100
Pulsed
measurement
VGS = –4 V
Pulsed
measurement
ID = –1 mA
–10 mA
TA = 150 ˚C
75 ˚C
25 ˚C
50
0
–25 ˚C
0
–4
–8
–12
–16
–20
–1
–2
–5
–10
–20
–50 –100
VGS - Gate to Source Voltage - V
ID - Drain Current - mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
140
120
100
80
100
VGS = 0
f = 1 MHz
VGS = –4 V
ID = –10 mA
30
10
Ciss
Coss
3
1
60
Crss
40
20
0.3
0.1
–30
0
30
60
90
120
150
0.5
–1
–2
–5 –10 –20
–50 –100
Tch - Channel Temperature - ˚C
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
SWITCHING CHARACTERISTICS
500
–100
–10
VDD = –5.0 V
VGS = –4 V
RG = 10 Ω
VGS = 0
Pulsed
measurement
200
100
50
tr
td(on)
tf
–1
20
10
5
td(off)
–0.1
–5
–10
–20
–50 –100 –200
–500
–0.5
–0.6
–0.7
–0.8
–0.9
–1.0
ID - Drain Current - mA
VSD - Source to Drain Voltage - V
4
µPA607T
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
TEI-1202
IEI-1209
C10535E
MEI-1202
X10679E
5
µPA607T
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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