UPA810TGB-T1 [RENESAS]
TRANSISTOR,BJT,PAIR,NPN,12V V(BR)CEO,100MA I(C),TSOP;
| 型号： | UPA810TGB-T1 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRANSISTOR,BJT,PAIR,NPN,12V V(BR)CEO,100MA I(C),TSOP |
| 文件： | 总8页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
2.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
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3.
4.
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5.
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6.
7.
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incurred by you resulting from errors in or omissions from the information included herein.
Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and
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“Standard”:
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.
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You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
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damages arising out of the use of Renesas Electronics products beyond such specified ranges.
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specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µPA810T
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 6-PIN 2 × 2SC4226) SMALL MINI MOLD
PACKAGE DRAWINGS
The µPA810T has built-in 2 low-voltage transistors which are designed to
(Unit: m m )
amplify low noise in the VHF band to the UHF band.
2.1±0.1
FEATURES
1.25±0.1
•
Low Noise
NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
•
High Gain
|S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
A Small Mini Mold Package Adopted
Built-in 2 Transistors (2 × 2SC4226)
•
•
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
µPA810T
Loose products
(50 PCS)
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µPA810T-T1
Taping products
(3 KPCS/Reel)
Remark If you require an evaluation sample, please contact an NEC Sales
PIN CONFIGURATION (Top View)
Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
6
5
2
4
Q
1
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
Q
2
20
12
3
1
3
V
V
100
mA
mW
PIN CONNECTIONS
1. Collector (Q1)
2. Base (Q2)
Total Power Dissipation
PT
150 in 1 element
200 in 2 elements
4. Emitter (Q2)
5. Emitter (Q1)
6. Base (Q1)
Note
3. Collector (Q2)
Junction Temperature
Storage Temperature
Tj
150
˚C
˚C
Tstg
–65 to +150
Note 110 mW must not be exceeded in 1 element.
The inform ation in this docum ent is subject to change w ithout notice.
Document No. P11463EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996
©
µPA810T
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
SYMBOL
ICBO
IEBO
CONDITION
VCB = 10 V, IE = 0
MIN.
TYP.
MAX.
1
UNIT
µA
VEB = 1 V, IC = 0
1
µA
hFE
VCE = 3 V, IC = 7 mANote 1
VCE = 3 V, IC = 7 mA
70
250
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
fT
3.0
4.5
0.7
9
GHz
pF
Cre
VCB = 3 V, IE = 0, f = 1 MHzNote 2
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
1.5
2.5
2
|S21e|
7
dB
NF
1.2
dB
hFE Ratio
hFE1/hFE2
VCE = 3 V, IC = 7 mA
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
0.85
Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
FB
24R
GB
25R
Marking
hFE Value
70 to 140
125 to 250
TYPICAL CHARACTERISTICS (TA = 25 °C)
PT
– T
A
Characteristics
IC – VBE Characteristics
20
10
VCE = 3 V
200
100
0
0.5
Base to Emitter Voltage VBE (V)
1.0
0
50
100
150
Ambient Temperature T
A
(°C)
I
C
– VCE Characteristics
hFE – IC Characteristics
200
100
50
25
20
15
µ
IB =160 A
V
CE = 3 V
140
µ
µ
A
A
120
100
µ
A
80
60
40
20
µ A
10
5
µ
µ
µ
A
A
A
20
10
0
5
10
0.5
1
5
10
C (mA)
50
Collector Current I
Collector to Emitter Voltage VCE (V)
2
µPA810T
f
T
– I
C
Characteristics
l S21e l 2– I
C Characteristics
15
10
5
20
10
V
CE = 3 V
V
CE = 3 V
f = 1.0 GHZ
f = 1.0 GH
Z
5
2
1
0
0.5
1
5
10
50 100
0.5
1
5
10
50
Collector Current I
C
(mA)
Collector Current I (mA)
C
NF – I
C
Characteristics
l S21e l 2– f Characteristics
6
24
VCE = 3 V
V
CE = 3 V
f = 1 GH
Z
IC = 7 mA
20
16
12
4
2
0
8
4
0
2.0
0.1
0.2
0.5
1.0
5.0
0.5 1.0
5.0 10
Collector Current I
50 100
C
(mA)
Frequency f (GHZ)
Cre – VCB Characteristics
5.0
f = 1 MH
Z
2.0
1.0
0.5
0.2
0.1
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
3
µPA810T
S-PARAMETERS
VCE = 3 V, IC = 1 mA
FREQUENCY
MHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.00
200.00
0.959
0.920
0.838
0.810
0.775
0.767
0.745
0.722
0.711
0.715
0.708
0.697
0.688
0.675
0.706
0.725
0.723
0.718
0.702
0.716
–26.1
–48.3
3.680
3.305
2.972
2.612
2.367
2.149
1.986
1.854
1.655
1.541
1.414
1.340
1.271
1.174
1.119
1.058
1.007
0.998
0.957
0.943
162.0
146.4
131.3
121.4
110.9
104.1
93.8
87.9
80.0
74.0
69.2
63.3
59.5
54.4
49.8
47.5
43.9
40.8
36.2
31.1
0.045
0.080
0.111
0.128
0.137
0.147
0.147
0.150
0.143
0.140
0.136
0.134
0.132
0.122
0.118
0.111
0.114
0.119
0.126
0.137
77.2
63.8
50.1
43.5
34.7
30.8
25.1
21.5
20.5
17.1
19.0
18.0
18.5
20.1
21.9
29.5
33.2
40.8
44.1
47.1
0.983
0.937
0.863
0.815
0.745
0.724
0.693
0.682
0.668
0.644
0.623
0.594
0.577
0.559
0.559
0.549
0.547
0.537
0.526
0.514
–9.0
–15.8
–23.0
–26.3
–29.1
–31.7
–33.2
–36.5
–39.2
–43.7
–46.8
–50.1
–52.7
–55.3
–58.3
–61.9
–66.8
–71.6
–76.8
–81.8
300.00
–69.2
400.00
–85.6
500.00
–100.0
–115.0
–127.0
–137.7
–146.4
–155.0
–163.2
–171.9
–177.1
178.8
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
173.6
168.7
161.1
156.4
152.5
149.8
VCE = 3 V, IC = 3 mA
FREQUENCY
MHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.00
200.00
0.878
0.788
0.685
0.634
0.603
0.591
0.573
0.566
0.563
0.573
0.577
0.572
0.563
0.555
0.584
0.603
0.608
0.607
0.598
0.612
–39.3
–69.5
9.289
7.675
6.222
5.151
4.360
3.838
3.378
3.215
2.821
2.594
2.359
2.200
2.084
1.904
1.803
1.700
1.616
1.591
1.523
1.488
153.2
133.1
117.5
108.1
99.6
94.6
86.0
82.1
75.6
70.7
67.2
62.2
58.8
54.8
50.5
48.7
45.4
42.4
38.1
32.8
0.041
0.068
0.087
0.094
0.100
0.105
0.107
0.113
0.114
0.118
0.122
0.128
0.136
0.138
0.146
0.150
0.161
0.173
0.183
0.197
71.5
55.9
44.8
41.7
37.3
37.7
36.4
36.7
38.8
38.3
41.5
41.7
42.9
43.8
44.3
48.4
47.8
50.0
48.8
47.7
0.941
0.807
0.674
0.588
0.511
0.475
0.443
0.425
0.408
0.385
0.365
0.343
0.326
0.309
0.301
0.290
0.281
0.268
0.255
0.244
–17.3
–28.4
–36.5
–39.0
–40.5
–41.3
–41.5
–43.2
–45.0
–48.2
–50.7
–53.3
–55.1
–57.1
–59.6
–62.8
–67.3
–72.3
–77.4
–82.6
300.00
–93.9
400.00
–111.2
–125.2
–137.9
–148.5
–156.8
–163.4
–170.3
–177.2
175.4
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
171.4
168.5
164.9
161.2
154.7
150.8
147.7
145.8
4
µPA810T
S-PARAMETERS
VCE = 3 V, IC = 5 mA
FREQUENCY
MHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.00
200.00
0.803
0.693
0.594
0.548
0.528
0.520
0.508
0.505
0.505
0.519
0.527
0.525
0.518
0.513
0.539
0.558
0.565
0.567
0.561
0.574
–48.9
–83.5
13.450
10.285
7.895
6.305
5.237
4.554
3.961
3.624
3.283
3.009
2.729
2.536
2.399
2.188
2.067
1.945
1.847
1.814
1.737
1.693
147.0
124.9
110.2
101.7
94.4
90.4
82.8
79.1
73.6
69.1
66.0
61.5
58.3
54.6
50.6
48.9
46.0
43.0
38.9
33.8
0.040
0.059
0.073
0.080
0.086
0.092
0.097
0.106
0.112
0.120
0.127
0.135
0.147
0.151
0.162
0.169
0.181
0.194
0.205
0.219
65.9
54.1
45.6
44.7
42.6
45.2
45.4
46.4
48.6
48.0
50.1
49.4
49.9
50.2
49.5
52.1
50.8
51.9
49.8
47.9
0.892
0.705
0.557
0.468
0.398
0.363
0.334
0.317
0.301
0.279
0.262
0.243
0.227
0.211
0.202
0.190
0.179
0.166
0.152
0.142
–23.3
–36.2
–43.4
–45.0
–45.4
–45.2
–44.8
–46.0
–47.1
–49.9
–52.2
–54.7
–56.2
–57.7
–60.2
–63.7
–68.3
–74.4
–80.5
–86.6
300.00
–108.3
–125.1
–138.0
–149.3
–158.7
–165.6
–171.1
–176.9
177.0
400.00
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
170.1
166.6
164.1
161.2
158.0
152.1
148.5
145.6
144.1
VCE = 3 V, IC = 7 mA
FREQUENCY
MHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.00
200.00
0.729
0.612
0.529
0.492
0.481
0.476
0.469
0.469
0.471
0.487
0.497
0.496
0.490
0.485
0.513
0.531
0.539
0.543
0.539
0.552
–58.5
–95.4
–119.9
–135.6
–147.4
–157.4
–166.0
–171.8
–176.4
178.6
172.9
166.5
163.3
161.2
158.7
155.9
150.3
146.9
144.2
142.6
17.087
12.153
9.023
7.052
5.805
4.986
4.341
3.951
3.408
3.268
2.959
2.748
2.598
2.365
2.230
2.100
1.990
1.955
1.867
1.820
141.0
118.7
105.1
97.4
91.0
87.6
80.7
77.3
71.8
68.1
65.2
60.9
57.8
54.4
50.5
49.0
46.2
43.4
39.4
34.3
0.037
0.052
0.064
0.072
0.078
0.087
0.094
0.106
0.112
0.123
0.132
0.142
0.155
0.161
0.172
0.180
0.194
0.207
0.218
0.233
66.1
52.6
47.7
48.8
49.2
51.9
52.3
53.1
54.6
53.4
55.1
53.9
54.0
53.4
52.0
54.1
52.2
52.8
50.2
47.9
0.838
0.618
0.467
0.382
0.321
0.291
0.265
0.248
0.233
0.213
0.197
0.179
0.164
0.149
0.140
0.127
0.115
0.102
0.088
0.080
–29.0
–42.2
–48.4
–49.2
–48.7
–47.9
–47.0
–47.6
–48.7
–51.0
–53.1
–55.6
–57.0
–59.0
–61.3
–65.2
–70.6
–78.3
–87.0
–95.5
300.00
400.00
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
5
µPA810T
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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