UPC1652G [RENESAS]
RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER;型号: | UPC1652G |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 放大器 射频 微波 功率放大器 |
文件: | 总10页 (文件大小:173K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Old Company Name in Catalogs and Other Documents
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Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
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April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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DATASHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC1652G
SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT
WIDE BAND AMPLIFIER
DESCRIPTION
PIN CONNECTIOS
The µPC1652G is
a
silicon monolithic integrated circuit
especially designed as a wide band amplifier convering HF band
through UHF band.
INPUT
GND
GND
D
1
2
3
4
8
7
6
5
GND
V
V
CC
CC
FEATURES
•
•
•
•
Excellent frequency response : 1 200 MHz TYP. @ 3 dB down
High power gain : 18 dB TYP. @ f = 500 MHz
Low voltage operation : VCC = 5 V
OUTPUT
SOP package
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Supply Voltage
VCC
PD
7
mW
°C
Total Power dissipation
Operating Ambient Temperature
Storage Temperature
440
TA
−20 to +75
−4to +15
Tstg
°C
EQUIVALENT CIRCUIT
ELCTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5 V)
HARACTERISTIC
icuit Current
Power Gain
SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
V
CC
ICC
GP
15
16
20
18
25
20
mA No signals
dB f = 500 MHz
dB f = 500 MHz
MHz 3 dB down below flat gain
dB f = 500 MHz
dB f = 500 MHz
dB f = 500 MHz
dBm f = 500 MHz
Noise Figure
NF
BW
ISO
5.5 6.5
1000 1200
OUT
Band Width
Isolation
23
17
12
3
26
20
15
5
IN
Input Return Loss
Output Return Loss
Maximum Output Level
S11
S22
PO
GND
NEC cannot assume any responsibility for any circuits shown or represent that
they are free from patent infringement
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12443EJ5V0DS00 (5th edition)
Date Published November 1999 N CP(K)
Printed in Japan
The mark
shows major revised points.
1983, 1999
©
µPC1652G
TYPICAL CHARACTERISTICS (TA = +25 °C)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
INPUT POWER vs. OUTPUT POWER
V
CC = 5 V
f = 500 MHz
20
10
+5
0
−5
0
1
2
3
4
5
6
−20
−15
−10
VCC-Supply Voltage-V
Pin-Input Power-dBm
NOISE FIGURE AND POWER GAIN
vs. FREQUENCY
INPUT AND OUTPUT RETURN LOSS
vs. FREQUENCY
V
CC
=
V
CC
=
5 V
5 V
oduct
10
8
25
20
0
−10
G
P
|S11
|
6
4
2
0
15
10
−20
−30
−40
NF
|S12
|
5
0
50
100
200
500
1000
2000
50
100
200
500
1000
2000
f-Frequency-MHz
f-Frequency-MHz
ued Pr
ISOLATION vs. FREQUENCY
V
CC
=
5 V
0
−10
−20
−30
−40
50
100
200
500
1000
2000
f-Frequency-MHz
Discontin
2
Data Sheet P12443EJ5V0DS00
µPC1652G
PACKAGE DIMENSIONS
8 PIN PLASTIC SOP (225 mil) (UNIT: mm)
8
5
detail of lead end
+7˚
–3˚
3˚
1
4
5.2 ± 0.2
oduct
6.5 ± 0.3
4.4 ± 0.15
1.57 ± 0.2
1.1 ± 0.2
1.49
0.85 MAX.
0.6 ± 0.2
0.10
+0.08
–0.07
1.27
0.17
+0.08
–0.07
ued Pr
0.42
M
0.12
0.1 ± 0.1
Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition.
NOTE
Discontin
3
Data Sheet P12443EJ5V0DS00
µPC1652G
NOTE ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as wide as possible to keep minimum ground impedance (to prevent undesired oscillation).
(3) Keep the track length of the ground pins as short as possible.
(4) The bypass capacitor should be attached to the VCC pin.
(5) The DC cut capacitor must be each attached to the input and output pins.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered in the following recommended conditions. Other soldering methods an
conditions than the recommended conditions are to be consulted with our sales representatives.
µPC1652G
Rnded
Soldering Method
Infrared ray reflow
Soldering Conditions
Conn Symbol
Package peak temperature: 235 °C, Hour: within 30 s.
(more than 210 °C), Time: 3 times, Limited days: no.Note
IR35-00-3
VPS
Package peak temperature: 215 °C, Hour: within 40 s.
(more than 200 °C), Time: 3 times, Limited days: no.Note
VP15-00-3
WS60-00-1
Wave soldering
Pin part heating
Soldering tub temperature: less than 260 °C, Hour: thin 10 s.
Time: 1 time, Limited days: no.Note
Pin area temperature: less than 300 °C, Hour: withiin.
Limited days: no.Note
Note It is the storage days after opening a dry pack, te stoge conditions are 25 °C, less than 65 % RH.
Caution The combined use of soldering mhod is to be avoided (However, except the pin area heating
method).
For details of recommended solderng cnditions for surface mounting, refer to information document SEMICON-
DUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
4
Data Sheet P12443EJ5V0DS00
µPC1652G
[MEMO]
5
Data Sheet P12443EJ5V0DS00
µPC1652G
[MEMO]
6
Data Sheet P12443EJ5V0DS00
µPC1652G
[MEMO]
7
Data Sheet P12443EJ5V0DS00
µPC1652G
• The information in this document is subject to change without notice. Before using this documentplea
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without thpriowritten
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors whh maappear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or oellectual property
rights of third parties by or arising from use of a device described herein or any other liaarising from use
of such device. No license, either express, implied or otherwise, is granted under aents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this docuent are provided for illustrative
purposes in semiconductor product operation and application examhe icorporation of these circuits,
software, and information in the design of the customer's equipment sl be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any loses incurred by the customer or third
parties arising from the use of these circuits, software, and infoation.
• While NEC Corporation has been making continuous effort to ethe reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To mze risks of damage or injury to persons or
property arising from a defect in an NEC semiconductvice, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-cotainet, and anti-failure features.
• NEC devices are classified into the following three quity grades:
"Standard", "Special", and "Specific". The Specific uaity grade applies only to devices developed based on a
customer designated "quality assurance proramfor a specific application. The recommended applications of
a device depend on its quality grade, as indiced below. Customers must check the quality grade of each device
before using it in a particular appliction.
Standard: Computers, office equipent, communications equipment, test and measurement equipment,
audio and visual equment, home electronic appliances, machine tools, personal electronic
equipment and instrial robots
Special: Transportatiquipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, ae systems, safety equipment and medical equipment (not specifically designed
for life suppo
Specific: Aircrat, aeospace equipment, submersible repeaters, nuclear reactor control systems, life
support ystems or medical equipment for life support, etc.
The quaity gdoNEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customes intend to use NEC devices for applications other than those specified for Standard quality grade,
thld cntact an NEC sales representative in advance.
M7 98. 8
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