UPC4741G2(5)-E1 [RENESAS]
IC,OP-AMP,QUAD,BIPOLAR,SSOP,14PIN,PLASTIC;
| 型号： | UPC4741G2(5)-E1 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | IC,OP-AMP,QUAD,BIPOLAR,SSOP,14PIN,PLASTIC 放大器 光电二极管 |
| 文件： | 总10页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC4741
HIGH PERFORMANCE QUAD OPERATIONAL AMPLIFIER
DESCRIPTION
The µPC4741 consists of four independent frequency compensated operational amplifiers featuring higher speed, broader
band than general purpose type as 741. The µPC4741 is most appropriate for AC signal amplifier applications such as
active filters or pulse amplifiers.
FEATURES
• Internal frequency compensation
• Low noise
• Output short circuit protection
ORDERING INFORMATION
Part Number
Package
µPC4741C
µPC4741C(5)
µPC4741G2
µPC4741G2(5)
14-pin plastic DIP (7.62 mm (300))
14-pin plastic DIP (7.62 mm (300))
14-pin plastic SOP (5.72 mm (225))
14-pin plastic SOP (5.72 mm (225))
EQUIVALENT CIRCUIT (1/4 Circuit)
PIN CONFIGURATION (Top View)
V+
µ
PC4741C, 4741G2
14 OUT
R1
OUT
1
1
4
Q
9
1
4
Q
5
Q
14
I
I1
2
3
4
5
6
7
13 II4
− +
− +
Q
12
I
N1
12 IN4
11 V−
I
I
Q
1
Q
2
Q
8
Q
16
V+
R
5
Q
Q
10
I
N
R
4
I
N2
10
I
I
N3
I3
C1
R6
R
7
− +
− +
Q
6
Q
15
I
I2
9
D
1
2
3
Q
7
OUT
Q
13
OUT
2
8
OUT
3
Q
3
Q
4
11
D
2
R8
R2
R3
V–
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
The mark shows major revised points.
Document No. G16051EJ4V0DS00 (4th edition)
Date Published March 2004 N CP(K)
Printed in Japan
1987
µPC4741
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
−0.3 to +40
30
Unit
V
Voltage between V+ and V−
Differential Input Voltage
Input Voltage Note2
Note1
V+ − V−
VID
V
V−−0.3 to V+ +0.3
V−−0.3 to V+ +0.3
570
VI
V
Output Voltage Note3
VO
V
Power Dissipation
C
Package Note4
G2 Package Note5
PT
mW
mW
sec
°C
°C
550
Output Short Circuit Duration Note6
Operating Ambient Temperature
Storage Temperature
10
TA
−20 to +80
−55 to +125
Tstg
Notes 1. Reverse connection of supply voltage can cause destruction.
2. The input voltage should be allowed to input without damage or destruction. Even during the transition period
of supply voltage, power on/off etc., this specification should be kept. The normal operation will establish
when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics.
3. This specification is the voltage which should be allowed to supply to the output terminal from external
without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this
specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of
electrical characteristics.
4. Thermal derating factor is –7.6 mW/°C when ambient temperature is higher than 50°C.
5. Thermal derating factor is –5.5 mW/°C when ambient temperature is higher than 25°C.
6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and
Note 5.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
MIN.
4
TYP.
MAX.
16
Unit
V
Supply Voltage
V
2
Data Sheet G16051EJ4V0DS
µPC4741
µPC4741C, 4741G2
ELECTRICAL CHARACTERISTICS (TA = 25°C, V = ±15 V)
±
Parameter
Symbol
Conditions
MIN.
TYP.
±1.0
±30
70
MAX.
±5.0
±50
Unit
mV
nA
Input Offset Voltage
V
IO
RS
≤ 100 Ω
Input Offset Current Note
I
IO
Input Bias Current Note
I
B
300
nA
Large Signal Voltage Gain
Power Consumption
A
V
R
L
≥ 2 kΩ , V
O
= ±10 V
25,000
80
50,000
150
100
50
Pd
I
O
= 0 A
210
100
mW
dB
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Maximum Output Voltage
Maximum Output Voltage
Common Mode Input Voltage Range
Slew Rate
CMR
SVR
µV/ V
V
V
V
om
om
RL
≥ 10 kΩ
≥ 2 kΩ
±12
±10
±12
±13.7
±12.5
±14
1.6
RL
V
V
ICM
V
SR
A
V
= 1
V/ µs
nV/ Hz
dB
Input Equivalent Noise Voltage Density
Channel Separation
e
n
f = 1 kHz
9
f = 10 kHz
108
Note Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage.
µPC4741C (5), 4741G2 (5)
±
ELECTRICAL CHARACTERISTICS (TA = 25°C, V = ±15 V)
Parameter
Symbol
Conditions
MIN.
TYP.
±1.0
±30
MAX.
±2.0
±50
Unit
mV
nA
Input Offset Voltage
V
IO
RS
≤ 100 Ω
Input Offset Current Note
I
IO
Input Bias Current Note
I
B
100
nA
Large Signal Voltage Gain
Power Consumption
A
V
R
L
≥ 2 kΩ , V
O
= ±10 V
28,000
85
50,000
150
Pd
I
O
= 0 A
210
50
mW
dB
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Maximum Output Voltage
Maximum Output Voltage
Common Mode Input Voltage Range
Slew Rate
CMR
SVR
90
µV/ V
V
V
V
om
om
RL
≥ 10 kΩ
≥ 2 kΩ
±12.5
±11
±13.7
±12.5
±14
1.6
RL
V
V
ICM
±13
V
SR
A
V
= 1
V/ µs
nV/ Hz
dB
Input Equivalent Noise Voltage Density
Channel Separation
e
n
f = 1 kHz
9
f = 10 kHz
108
Note Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage.
3
Data Sheet G16051EJ4V0DS
µPC4741
MEASUREMENT CIRCUIT
Fig.1 Channel Separation Measurement Circuit
50 kΩ
−
V
O2
+
50 Ω
Channel Separation
1
1000
V
V
O2
= 20 log
O1
10 kΩ
10 kΩ
−
V
O1
+
4
Data Sheet G16051EJ4V0DS
µPC4741
TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25°C, TYP.)
POWER DISSIPATION
OPEN LOOP FREQUENCY RESPONSE
800
600
400
200
120
100
80
V
R
C
=
15 V
= 2 k
= 50 pF
L
L
Ω
PC4741C
µ
µ
132˚C/W
PC4741G2
60
182˚C/W
40
20
0
1
10
100
1 k 10 k 100 k 1 M 10 M
0
20
40
60
80
100
T
A
- Operating Ambient Temperature - ˚C
f - Frequency - Hz
INPUT OFFSET VOLTAGE
INPUT BIAS CURRENT
V = 15 V
100
95
90
85
80
75
70
65
60
3
2.5
2
V = 15 V
each 5 samples data
1.5
1
0.5
0
−0.5
−1
−1.5
−2
−2.5
−3
55
50
−20
0
20
40
60
80
−20
0
20
40
60
80
T
A
- Operating Ambient Temperature - ˚C
TA
- Operating Ambient Temperature - ˚C
LARGE SIGNAL FREQUENCY RESPONSE
V = 15 V
COMMON MODE INPUT VOLTAGE RANGE
30
20
40
30
20
10
V = 10 V
10
0
V = 5 V
100
1 k
10 k
100 k
1 M
0
10
20
f - Frequency - Hz
V - Supply Voltage - V
5
Data Sheet G16051EJ4V0DS
µPC4741
OUTPUT VOLTAGE SWING
VOLTAGE FOLLOWER PULSE RESPONSE
30
20
V = 15 V
R
L
= 2 kΩ
−5
C
L
= 50 pF
0
−5
5
10
0
0
−5
100
300
R
1 k
3 k
10 k
0
10
t - Time -
20
30
L
- Load Resistance - Ω
µ
s
SUPPLY CURRENT
SUPPLY CURRENT
6
5
4
3
2
1
10
9
V = 15 V
8
7
6
5
4
3
2
1
0
−20
15
0
10
20
5
0
20
40
60
80
V - Supply Voltage - V
T
A
- Operating Ambient Temperature - ˚C
INPUT EQUIVALENT NOISE VOLTAGE DENSITY
CHANNEL SEPARATION
150
100
50
30
20
10
0
0
10
100
1 k
10 k
100 k
10
100
1 k
10 k
100 k
f - Frequency - Hz
f - Frequency - Hz
6
Data Sheet G16051EJ4V0DS
µPC4741
PACKAGE DRAWINGS (Unit: mm)
14-PIN PLASTIC DIP (7.62 mm (300))
14
8
1
7
A
K
L
J
I
C
H
M
G
B
R
F
M
D
N
NOTES
ITEM MILLIMETERS
1. Each lead centerline is located within 0.25 mm of
its true position (T.P.) at maximum material condition.
19.22 0.2
2.14 MAX.
2.54 (T.P.)
0.50 0.10
1.32 0.12
3.6 0.3
A
B
C
2. ltem "K" to center of leads when formed parallel.
D
F
G
H
I
0.51 MIN.
3.55
J
K
L
4.3 0.2
7.62 (T.P.)
6.4 0.2
+0.10
0.25
M
−0.05
N
R
0.25
0~15°
P14C-100-300B1-3
7
Data Sheet G16051EJ4V0DS
µPC4741
14-PIN PLASTIC SOP (5.72 mm (225))
14
8
detail of lead end
P
1
7
A
H
I
F
J
G
S
B
L
C
N
S
K
D
M
M
E
NOTE
ITEM MILLIMETERS
Each lead centerline is located within 0.1 mm of
its true position (T.P.) at maximum material condition.
A
B
C
10.2 0.26
1.42 MAX.
1.27 (T.P.)
+0.08
0.42
D
E
F
−0.07
0.1 0.1
+0.21
1.59
−0.2
G
H
I
1.49
6.5 0.2
4.4 0.1
1.1 0.16
J
+0.08
0.17
K
−0.07
L
M
N
0.6 0.2
0.1
0.10
+7°
3°
P
−3°
S14GM-50-225B, C-6
8
Data Sheet G16051EJ4V0DS
µPC4741
RECOMMENDED SOLDERING CONDITIONS
The µPC4741 should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, contact an NEC Electronics sales
representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Type of Surface Mount Device
µPC4741G2, 4741G2(5): 14-pin plastic SOP (5.72 mm (225))
Process
Conditions
Symbol
Infrared Ray Reflow
Peak temperature: 235°C or below (Package surface temperature),
Reflow time: 30 seconds or less (at 210°C or higher),
Maximum number of reflow processes: 3 time.
IR35-00-3
Vapor Phase Soldering
Wave Soldering
Peak temperature: 215°C or below (Package surface temperature),
Reflow time: 40 seconds or less (at 200°C or higher),
Maximum number of reflow processes: 3 time.
VP15-00-3
WS60-00-1
–
Solder temperature: 260°C or below, Flow time: 10 seconds or less,
Maximum number of flow processes: 1 time,
Pre-heating temperature: 120°C or below (Package surface temperature).
Partial Heating Method
Pin temperature: 300°C or below,
Heat time: 3 seconds or less (Per each side of the device).
Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the
device will be damaged by heat stress.
Type of Through-hole Device
µPC4741C, 4741C(5): 14-pin plastic DIP (7.62 mm (300))
Process
Wave Soldering
Conditions
Solder temperature: 260°C or below,
Flow time: 10 seconds or less.
(only to leads)
Partial Heating Method
Pin temperature: 300°C or below,
Heat time: 3 seconds or less (per each lead).
Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that
the package body does not get jet soldered.
9
Data Sheet G16051EJ4V0DS
µPC4741
•
The information in this document is current as of March, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
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appear in this document.
•
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responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
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M8E 02. 11-1
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