UPD166035GR-E2-AY [RENESAS]

INTELLIGENT POWER DEVICE;
UPD166035GR-E2-AY
型号: UPD166035GR-E2-AY
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

INTELLIGENT POWER DEVICE

驱动 接口集成电路
文件: 总17页 (文件大小:534K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Data Sheet  
mPD166035GR  
INTELLIGENT POWER DEVICE  
Description  
R07DS1117EJ0200  
Rev.2.00  
Jul 31, 2014  
The mPD166035 is an N-channel high side driver with built-in charge pump and embedded protection function.  
When device is overtemperature or overcurrent is generated in output MOS, the protection function operates to prevent  
destruction and degradation of the product, and also outputs self-diagnostic signal.  
Features  
·
·
·
High temperature operation (Tch = 175°C MAX.)  
Built-in charge pump circuit  
Low on-state resistance  
RDS(ON) = 80 mW MAX. (VIN = VIH, IO = 1.5A, Tch = 25°C)  
·
Built-in protection circuit  
Current limitation  
Overtemperature protection  
Active clamp operation at inductive load switch off  
Built-in diagnostic function  
Package: Power SOP 8  
·
·
·
Application  
·
Switching of all types of 14 V DC grounded loads, such as inductor, resistor and capacitor  
Ordering Information  
Part No.  
Lead Plating  
Packing  
Tape 2500 p/reel  
Tape 2500 p/reel  
Package  
Power SOP 8  
Power SOP 8  
mPD166035GR-E1-AY  
mPD166035GR-E2-AY  
Sn  
Sn  
R07DS1117EJ0200 Rev.2.00  
Jul 31, 2014  
Page 1 of 15  
mPD166035GR  
Block Diagram  
Pin Configuration  
·
Power SOP 8  
Pin Functions  
Pin No.  
Pin Name  
Function  
1
2
3
4
5
6
7
8
IN  
Input pin  
DIAG  
GND  
OUT  
VCC  
VCC  
VCC  
VCC  
DIAG output pin  
Ground pin  
High side output pin  
Power supply pin  
Power supply pin  
Power supply pin  
Power supply pin  
R07DS1117EJ0200 Rev.2.00  
Jul 31, 2014  
Page 2 of 15  
mPD166035GR  
Absolute Maximum Ratings  
(Ta = 25°C, unless otherwise specified)  
Item  
Symbol  
Rating  
Unit  
V
Condition  
Power supply voltage  
VCC1  
VCC2  
VIN1  
VIN2  
IIN  
–0.3 to +28  
35  
V
t = 300 ms  
IN input voltage  
–0.5 to +5.5  
V
5
±10  
V
VCC = 0 V, t = 0.5 s  
IN input current  
mA  
A
Output current  
IOA  
2
Output negative voltage  
Power dissipation  
Operation temperature  
Storage temperature  
DIAG output voltage  
DIAG output current  
Clamp susceptibility  
VOA  
PD  
VCC–30  
2.70  
V
Without dynamic clamp  
Ta = 25°C Note  
W
°C  
°C  
V
Topt  
Tstg  
VDIAG  
IDIAG  
ECLP  
–40 to +125  
–55 to +175  
7.0  
10  
mA  
mJ  
100  
Note: When mounted on a epoxy PCB (where FR-4 is 10 cm ´ 10 cm, dimension of copper foil is 15% and thickness of  
copper foil is 35 mm), PW = 10 s  
R07DS1117EJ0200 Rev.2.00  
Jul 31, 2014  
Page 3 of 15  
mPD166035GR  
Electrical Characteristics  
(VCC = 8 to 16 V, Tch = –40 to +175°C, unless otherwise specified)  
Item  
Input voltage  
Symbol  
VIH  
MIN.  
2.8  
0
TYP.  
MAX.  
5.5  
1.5  
350  
Unit  
V
Condition  
VCC = 4.5 to 16 V  
VIL  
V
Input current  
IIH  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
V
VIN = 5.5 V  
VIN = 0 V  
IIL  
–10  
Note 1  
Standby current  
Output leakage current  
ICCH  
ICCL  
IOH1  
IOH2  
IOL  
4.0  
900  
2
VIN = VIH  
VIN = VIL  
Note 1  
VIN = VIL, VO = Vcc  
0.4  
VIN = VIL, VO = 4V  
–0.24  
VIN = VIL, VO = 0V  
DIAG output low level  
voltage  
VDIAG  
0.5  
VCC = 4.5 to 16V, IDIAG = 0.6mA  
DIAG output leakage  
current  
IDIAG  
VOIH  
VOIL  
4
10  
mA  
V
VDIAG = 7V  
Open load detection  
voltage  
Load connection  
detection voltage  
1.45  
V
Drain to source on-state RDS(ON)  
resistance  
80  
130  
10  
mW  
mW  
A
VIN = VIH, IO = 1.5A  
Tch = 25°C  
Tch = 150°C  
Overcurrent detection  
IS  
2
Note 2  
Overtemperature  
detection  
Tth  
(175)  
°C  
Turn on delay time  
Turn off delay time  
Rise time  
tD(ON)  
tD(OFF)  
tON  
4
200  
200  
100  
100  
300  
ms  
ms  
ms  
ms  
ms  
RL = 9.3W, VCC = 14V, VIN = 5.5V–0V  
30  
24  
5
Fall time  
tOFF  
DIAG Output Delay  
Time  
tDpd  
RL =9.3Ω, RDIAG=5.1kΩ, VCC =14V  
Io=-60mA  
Negative Output  
Voltage  
–VO  
VCC-30  
VCC-40  
14  
V
ms  
%
Output Oscillation Cycle tS  
at over current condition  
Overcurrent condition  
Overcurrent condition  
Output On Duty at over  
current condition  
DS  
30  
Notes: 1. OUT, DIAG current is not included.  
2. Not subject to production test, specified by design.  
R07DS1117EJ0200 Rev.2.00  
Jul 31, 2014  
Page 4 of 15  
mPD166035GR  
Definition of Switching Time  
50%  
50%  
Input voltage  
tD(OFF)  
tD(ON)  
90%  
90%  
Output voltage  
10%  
10%  
tON  
tOFF  
tDpd  
DIAG output  
voltage  
50%  
Truth Table  
Item  
VIN  
H
L
VOUT  
VDIAG  
Normal operation  
H
L
L
L
H
L
L
L
L
Overtemperature detection  
Overcurrent detection  
H
L
H
Chopping  
L
H
L
L
H
H
L
H
H
Open load detection  
R07DS1117EJ0200 Rev.2.00  
Jul 31, 2014  
Page 5 of 15  
mPD166035GR  
Outline of Functions  
Pre-Driver (Charge Pump Circuit) ON/OFF Control  
When the input voltage of the input pin (IN) is high level (2.8 V or more), the output MOS (Nch) turns on.  
When the output voltage of the input pin (IN) is low level (1.5 V or less), the output MOS (Nch) turns off.  
Charge pump circuit is built-in to drive the output MOS (Nch) that is connected to the high side.  
Overcurrent Detection Circuit  
This circuit detects overcurrent to output pin (OUT) caused by short circuit etc., and feeds back detection signal to  
control circuit.  
When the overcurrent is detected, the current limitation circuit and the control circuit start operation. The output current  
is restricted and chopping operation begins.  
Current Limitation Circuit  
This circuit limits the output current by using the detection signal from the overcurrent detection circuit, preventing  
destruction and degradation of the product.  
Overtemperature Detection Circuit  
This circuit detects overtemperature by output MOS (Nch) driving, and feeds back detection signal to control circuit.  
When the circuit detects overtemperature, the protection function of the control circuit operates and output is shutdown.  
Output MOS (Nch) automatically restarts when channel temperature cools down after shutdown.  
R07DS1117EJ0200 Rev.2.00  
Jul 31, 2014  
Page 6 of 15  
mPD166035GR  
Open Load Detection Circuit  
This circuit detects Open Load of output terminal. However, In case of using Open Load detection function, it is  
necessary to connect pull-up resistor (5.1Kohm±10%) with output terminal. (There are no electric characteristics  
influences in other circuit by presence of pull-up resistor.)  
Open Load is detected by inputting low-level (1.5V or less) to input terminal (IN). DAIG terminal outputs Hi-Z (pull-  
up: high-level) when the output terminal is open.  
5V  
VIN  
"L"  
"L"  
"H"  
ON  
GND  
VCC  
VOUT  
OFF  
OFF  
OFF  
OFF  
ON  
5V(Pull-up)  
GND  
VDIAG  
ON  
OFF  
ON  
Open load condition  
Diagnostic Output Circuit  
This circuit controls output of diagnostic signal form DIAG terminal when over current or over temperature or Open  
Load is detected.  
R07DS1117EJ0200 Rev.2.00  
Jul 31, 2014  
Page 7 of 15  
mPD166035GR  
Timing Chart  
Example of Application Circuit  
R07DS1117EJ0200 Rev.2.00  
Jul 31, 2014  
Page 8 of 15  
mPD166035GR  
Typical Characteristics  
IOH1  
IOH2  
R07DS1117EJ0200 Rev.2.00  
Jul 31, 2014  
Page 9 of 15  
mPD166035GR  
R07DS1117EJ0200 Rev.2.00  
Jul 31, 2014  
Page 10 of 15  
mPD166035GR  
R07DS1117EJ0200 Rev.2.00  
Jul 31, 2014  
Page 11 of 15  
mPD166035GR  
R07DS1117EJ0200 Rev.2.00  
Jul 31, 2014  
Page 12 of 15  
mPD166035GR  
Transient Thermal Resistance Characteristics  
R07DS1117EJ0200 Rev.2.00  
Jul 31, 2014  
Page 13 of 15  
mPD166035GR  
Package Drawing  
Taping Information  
There are two types (-E1, -E2) of taping depending on the direction of the device.  
Marking Information  
This figure indicates the marking items and arrangement. However, details of the letterform, the size and the position  
aren't indicated.  
6035  
R07DS1117EJ0200 Rev.2.00  
Jul 31, 2014  
Page 14 of 15  
mPD166035GR  
Recommended Soldering Conditions  
The mPD166035 should be soldered and mounted under the following recommended conditions.  
For soldering methods and conditions other than those recommended below, contact a Renesas Electronics sales  
representative.  
For technical information, see the following website.  
Semiconductor Package Mount Manual (http://www.renesas.com/products/package/manual/index.jsp)  
·
·
mPD166035GR-E1-AY Note: Power SOP 8  
mPD166035GR-E2-AY Note: Power SOP 8  
Process  
Conditions  
Symbol  
Infrared reflow  
Maximum temperature (package’s surface temperature): 260°C or below,  
Time at maximum temperature: 10 seconds or less,  
IR60-00-3  
Time at temperature higher than 220°C: 60 seconds or less,  
Preheating time at 160°C to 180°C: 60 to 120 seconds, Times: Three times,  
Flux: Rosin flux with low chlorine (0.2 Wt% or below) recommended.  
Partial Heating  
Method  
Pin temperature: 300°C or below,  
Heat time: 3 seconds or less (Per each side of the device),  
Flux: Rosin flux with low chlorine (0.2 Wt% or below) recommended.  
Note: Pb-free (This product does not contain Pb in the external electrode.)  
R07DS1117EJ0200 Rev.2.00  
Jul 31, 2014  
Page 15 of 15  
Revision History  
mPD166035GR Data Sheet  
Description  
Summary  
Rev.  
Date  
Page  
1.00  
2.00  
Sep 20, 2013  
Jul 31, 2014  
First Edition Issued  
Absolute Maximum Ratings: IN input voltage(VIN1  
3
)
Change "–0.5V to +5.6V" to "–0.5V to +5.5V".  
Negative Output Voltage: Change "mA" to "V".  
4
5
Definition of Switching Time (tDpd): Change "90%" to "50%".  
Output Leakage Current: Change "A" to "mA".  
9
10  
15  
Output Leakage Current: Change "A" to "mA".  
Semiconductor Package Mount Manual: Change URL.  
All trademarks and registered trademarks are the property of their respective owners.  
C - 1  
Notice  
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Colophon 4.0  

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