X28HC256JZ-12T13 [RENESAS]

EEPROM 5V;
X28HC256JZ-12T13
型号: X28HC256JZ-12T13
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

EEPROM 5V

可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 内存集成电路
文件: 总19页 (文件大小:496K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATASHEET  
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM  
X28HC256  
Features  
The X28HC256 is a second generation high performance  
CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s  
proprietary, textured poly floating gate technology, providing a  
highly reliable 5V only nonvolatile memory.  
• Access time: 90ns  
• Simple byte and page write  
- Single 5V supply  
- No external high voltages or VP-P control circuits  
- Self timed  
The X28HC256 supports a 128-byte page write operation,  
effectively providing a 24µs/byte write cycle, and enabling the  
entire memory to be typically rewritten in less than 0.8s. The  
X28HC256 also features DATA polling and Toggle bit polling,  
two methods of providing early end of write detection. The  
X28HC256 also supports the JEDEC standard software data  
protection feature for protecting against inadvertent writes  
during power-up and power-down.  
- No erase before write  
- No complex programming algorithms  
- No overerase problem  
• Low power CMOS  
- Active: 60mA  
- Standby: 500µA  
Endurance for the X28HC256 is specified as a minimum  
100,000 write cycles per byte and an inherent data retention  
of 100 years.  
• Software data protection  
- Protects data against system level inadvertent writes  
• High speed page write capability  
• Highly reliable Direct Writecell  
- Endurance: 100,000 cycles  
- Data retention: 100 years  
• Early end of write detection  
- DATA polling  
- Toggle bit polling  
• RoHS compliant  
256k BIT  
EEPROM  
ARRAY  
X BUFFERS  
LATCHES AND  
DECODER  
A
TO A  
14  
0
ADDRESS  
INPUTS  
I/O BUFFERS  
AND LATCHES  
Y BUFFERS  
LATCHES AND  
DECODER  
I/O TO I/O  
0
7
DATA INPUTS/OUTPUTS  
CE  
CONTROL  
LOGIC AND  
TIMING  
OE  
WE  
V
V
CC  
SS  
FIGURE 1. BLOCK DIAGRAM  
August 27, 2015  
FN8108.5  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2005-2007, 2010, 2011, 2015. All Rights Reserved  
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.  
All other trademarks mentioned are the property of their respective owners.  
X28HC256  
Ordering Information  
PART NUMBER  
ACCESS TIME  
TEMP. RANGE  
(°C)  
(Note 4)  
PART MARKING  
(ns)  
150  
150  
150  
PACKAGE  
32 Ld PLCC (RoHS Compliant)  
32 Ld PLCC  
PKG. DWG. #  
N32.45x55  
N32.45x55  
N32.45x55  
X28HC256JZ-15 (Notes 1, 3) X28HC256J-15 ZHY  
0 to +70  
-40 to +85  
-40 to +85  
X28HC256JI-15 (Note 1)  
X28HC256JI-15 HY  
X28HC256JI-15 ZHY  
X28HC256JIZ-15  
(Notes 1, 3)  
32 Ld PLCC (RoHS Compliant)  
X28HC256PZ-15  
(Notes 2, 3)  
X28HC256P-15 HYZ  
X28HC256PI-15 HYZ  
150  
150  
0 to +70  
28 Ld PDIP (RoHS Compliant)  
28 Ld PDIP (RoHS Compliant)  
E28.6  
E28.6  
X28HC256PIZ-15  
(Notes 2, 3)  
-40 to +85  
X28HC256JZ-12 (Notes 1, 3) X28HC256J-12 ZHY  
120  
120  
120  
0 to +70  
-40 to +85  
-40 to +85  
32 Ld PLCC (RoHS Compliant)  
32 Ld PLCC  
N32.45x55  
N32.45x55  
N32.45x55  
X28HC256JI-12 (Note 1)  
X28HC256JI-12 HY  
X28HC256JI-12 ZHY  
X28HC256JIZ-12  
(Notes 1, 3)  
32 Ld PLCC (RoHS Compliant)  
X28HC256PZ-12  
(Notes 2, 3)  
X28HC256P-12 HYZ  
X28HC256PI-12 HYZ  
120  
120  
0 to +70  
28 Ld PDIP (RoHS Compliant)  
28 Ld PDIP (RoHS Compliant)  
E28.6  
E28.6  
X28HC256PIZ-12  
(Notes 2, 3)  
-40 to +85  
X28HC256SZ-12 (Note 3)  
X28HC256SI-12  
X28HC256S-12 HYZ  
X28HC256SI-12 HY  
X28HC256SI-12 HYZ  
120  
120  
120  
90  
0 to +70  
-40 to +85  
-40 to +85  
0 to +70  
28 Ld SOIC (300mils RoHS Compliant)  
28 Ld SOIC (300mils)  
MDP0027  
M28.3  
X28HC256SIZ-12 (Note 3)  
28 Ld SOIC (300mils RoHS Compliant)  
32 Ld PLCC (RoHS Compliant)  
32 Ld PLCC  
MDP0027  
N32.45x55  
N32.45x55  
N32.45x55  
X28HC256JZ-90 (Notes 1, 3) X28HC256J-90 ZHY  
X28HC256JI-90 (Note 1)  
X28HC256JI-90 HY  
X28HC256JI-90 ZHY  
90  
-40 to +85  
-40 to +85  
X28HC256JIZ-90  
(Notes 1, 3)  
90  
32 Ld PLCC (RoHS Compliant)  
X28HC256PZ-90  
(Notes 2, 3)  
X28HC256P-90 HYZ  
90  
0 to +70  
28 Ld PDIP (RoHS Compliant)  
E28.6  
X28HC256PIZ-90 (Notes 2, 3) X28HC256PI-90 HYZ  
90  
90  
90  
-40 to +85  
-40 to +85  
-40 to +85  
28 Ld PDIP (RoHS Compliant)  
28 Ld SOIC (300mils)  
E28.6  
X28HC256SI-90  
X28HC256SIZ-90 (Note 3)  
NOTES:  
X28HC256SI-90 HY  
X28HC256SI-90 HYZ  
M28.3  
28 Ld SOIC (300mils RoHS Compliant)  
MDP0027  
1. Add “T*” suffix for tape and reel. Please refer to TB347 for details on reel specifications.  
2. Pb-free PDIPs can be used for through hole wave solder processing only. They are not intended for use in Reflow solder processing applications.  
3. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin  
plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free  
products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.  
4. For Moisture Sensitivity Level (MSL), please see product information page for X28HC256. For more information on MSL, please see tech brief TB363.  
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X28HC256  
Pin Configurations  
X28HC256  
(28 LD FLATPACK, PDIP, SOIC)  
TOP VIEW  
X28HC256  
(32 LD PLCC, LCC)  
TOP VIEW  
A
A
1
28  
V
CC  
14  
12  
2
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
WE  
4
3
2
1 32 31 30  
29  
3
A
A
A
A
A
A
A
A
A
13  
7
6
5
4
3
2
1
0
A
A
5
6
7
8
9
A
4
A
8
6
5
8
28  
27  
26  
25  
24  
23  
22  
21  
A
A
5
A
9
9
A
A
6
A
11  
4
3
11  
NC  
OE  
7
OE  
A
2
8
A
10  
A
A
A
10  
11  
12  
13  
10  
1
0
9
CE  
I/O  
CE  
I/O  
10  
11  
12  
13  
14  
7
NC  
I/O  
7
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
0
1
2
6
5
4
3
I/O  
0
6
14 15 16 17 18 19 20  
I/O  
V
SS  
Pin Descriptions  
PIN #  
PIN #  
PIN NAME  
PDIP, SOIC  
PLCC, LCC  
DESCRIPTION  
A0, A1, A2, A3, A4, A5,  
A6, A7, A8, A9, A10, A11  
10, 9, 8, 7, 6, 5,  
4, 3, 25, 24, 21, 23,  
2, 26, 1  
11, 10, 9, 8, 7, 6,  
5, 4, 29, 28, 24, 27,  
3, 30, 2  
Addresses (A0 to A14) - Address inputs. The address inputs select  
an 8-bit memory location during a read or write operation.  
,
A12, A13, A14  
I/O0, I/O1, I/O2, I/O3,  
I/O4, I/O5, I/O6, I/O7  
11, 12, 13, 15  
16, 17, 18, 19  
13, 14, 15, 18  
19, 20, 21, 22  
Data In/Data Out (I/O0 to I/O7) - Data input/output- Data is  
written to or read from the X28HC256 through the I/O pins.  
WE  
27  
31  
Write Enable (WE) - The Write enable input controls the writing of  
data to the X28HC256.  
CE  
20  
23  
Chip Enable (CE) - The Chip enable input must be LOW to enable  
all read/write operations. When CE is HIGH, power consumption is  
reduced.  
OE  
22  
25  
Output Enable (OE) - The output enable input controls the data  
output buffers, and is used to initiate read operations.  
VCC  
VSS  
NC  
28  
14  
-
32  
16  
+5V  
Ground  
No Connect  
1, 12, 17, 26  
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X28HC256  
Absolute Maximum Ratings  
Thermal Information  
Voltage on any Pin with Respect to VSS . . . . . . . . . . . . . . . . . . . . . 1V to +7V  
DC Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA  
Temperature Under Bias  
X28HC256. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-10°C to +85°C  
X28HC256I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C  
Pb-free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493  
*Pb-free PDIPs can be used for through hole wave solder processing only.  
They are not intended for use in Reflow solder processing applications.  
Recommended Operating Conditions  
Temperature Range  
Commercial. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to +70°C  
Industrial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C  
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ± 10%  
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product  
reliability and result in failures not covered by warranty.  
DC Electrical Specifications Across recommended operating conditions, unless otherwise specified.  
LIMITS  
MIN  
TYP  
MAX  
PARAMETER  
VCC Active Current  
(TTL Inputs)  
CC Standby Current  
(TTL Inputs)  
CC Standby Current  
SYMBOL  
ICC  
TEST CONDITIONS  
(Note 7) (Note 5)  
(Note 7)  
UNIT  
mA  
CE = OE = VIL, WE = VIH, All I/O’s = open,  
address inputs = 0.4V/2.4V levels at f = 10MHz  
30  
60  
2
V
ISB1  
ISB2  
CE = VIH, OE = VIL, All I/O’s = open, other inputs = VIH  
1
mA  
µA  
V
CE = VCC - 0.3V, OE = GND, All I/Os = open, other  
inputs = VCC - 0.3V  
200  
500  
(CMOS Inputs)  
Input Leakage Current  
Output Leakage Current  
Input Low Voltage  
Input High Voltage  
Output Low Voltage  
Output High Voltage  
NOTES:  
ILI  
ILO  
VIN = VSS to VCC  
10  
10  
µA  
µA  
V
VOUT = VSS to VCC, CE = VIH  
VlL (Note 6)  
VIH (Note 6)  
VOL  
-1  
2
0.8  
VCC + 1  
0.4  
V
IOL = 6mA  
IOH = -4mA  
V
VOH  
2.4  
V
5. Typical values are for TA = +25°C and nominal supply voltage.  
6. VIL minimum and VIH maximum are for reference only and are not tested.  
7. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.  
Power-up Timing  
PARAMETER  
SYMBOL  
MAX  
100  
5
UNIT  
µs  
Power-up to Read  
Power-up to Write  
NOTE:  
tPUR, (Note 8)  
tPUW, (Note 8)  
ms  
8. This parameter is periodically sampled and not 100% tested.  
Capacitance TA = +25°C, f = 1MHz, VCC = 5V.  
SYMBOL  
TEST  
Input/output capacitance  
Input capacitance  
CONDITIONS  
VI/O = 0V  
VIN = 0V  
MAX  
10  
6
UNIT  
C
I/O (Note 8)  
pF  
pF  
CIN (Note 8)  
Endurance and Data Retention  
PARAMETER  
MIN  
MAX  
UNIT  
Endurance  
100,000  
100  
Cycles  
Years  
Data retention  
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X28HC256  
Symbol Table  
AC Conditions of Test  
Input pulse levels  
0V to 3V  
5ns  
WAVEFORM  
INPUTS  
OUTPUTS  
Input rise and fall times  
Input and output timing levels  
Must be  
steady  
Will be  
steady  
1.5V  
May change  
from LOW  
to HIGH  
Will change  
from LOW  
to HIGH  
Mode Selection  
CE  
OE  
WE  
MODE  
Read  
Write  
I/O  
DOUT  
DIN  
POWER  
active  
May change  
from HIGH  
to LOW  
Will change  
from HIGH  
to LOW  
L
L
H
Don’t Care:  
Changes  
Allowed  
Changing:  
State Not  
Known  
L
H
L
active  
H
X
X
Standby and write  
inhibit  
High Z  
standby  
N/A  
Center Line  
is High  
Impedance  
X
X
L
X
Write inhibit  
Write inhibit  
X
H
Equivalent AC Load Circuit  
5V  
1.92k  
OUTPUT  
1.37k  
30pF  
FIGURE 2. EQUIVALENT AC LOAD CIRCUIT  
AC Electrical Specifications Across recommended operating conditions, unless otherwise specified.  
X28HC256-70  
X28HC256-90  
X28HC256-12  
X28HC256-15  
PARAMETER  
Read Cycle Time  
SYMBOL  
tRC  
MIN  
70  
MAX  
MIN  
90  
MAX  
MIN  
120  
MAX  
MIN  
150  
MAX  
UNIT  
ns  
Chip Enable Access Time  
Address Access Time  
tCE  
70  
70  
35  
90  
90  
40  
120  
120  
50  
150  
150  
50  
ns  
tAA  
ns  
Output Enable Access Time  
CE LOW to Active Output  
OE LOW to Active Output  
CE HIGH to High Z Output  
OE HIGH to High Z Output  
Output Hold from Address Change  
NOTE:  
tOE  
ns  
tLZ (Note 9)  
tOLZ (Note 9)  
tHZ (Note 9)  
tOHZ (Note 9)  
tOH  
0
0
0
0
0
0
0
0
ns  
ns  
35  
35  
40  
40  
50  
50  
50  
50  
ns  
ns  
0
0
0
0
ns  
9. tLZ minimum, tHZ, tOLZ minimum and tOHZ are periodically sampled and not 100% tested, tHZ and tOHZ are measured with CL = 5pF, from the point  
when CE, OE return HIGH (whichever occurs first) to the time when the outputs are no longer driven..  
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X28HC256  
Read Cycle  
t
RC  
ADDRESS  
t
CE  
CE  
t
OE  
OE  
V
IH  
WE  
t
t
OHZ  
OLZ  
t
t
t
t
HZ  
LZ  
OH  
AA  
HIGH Z  
DATA VALID  
DATA VALID  
DATA I/O  
FIGURE 3. READ CYCLE  
Write Cycle Limits  
TYP  
PARAMETER  
SYMBOL  
MIN  
(Note 10)  
MAX  
5
UNIT  
Write Cycle Time  
t
WC (Note 11)  
3
ms  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Setup Time  
Address Hold Time  
Write Setup Time  
tAS  
tAH  
0
50  
0
tCS  
Write Hold Time  
tCH  
0
CE Pulse Width  
tCW  
tOES  
tOEH  
tWP  
50  
0
OE HIGH Setup Time  
OE HIGH Hold Time  
WE Pulse Width  
0
50  
50  
WE HIGH Recovery (page write only)  
tWPH  
(Note 12)  
Data Valid  
tDV  
tDS  
tDH  
1
µs  
ns  
ns  
µs  
µs  
Data Setup  
50  
0
Data Hold  
Delay to Next Write After Polling is True  
t
DW (Note 12)  
10  
Byte Load Cycle  
NOTES:  
tBLC  
0.15  
100  
10. Typical values are for TA = +25°C and nominal supply voltage.  
11. tWC is the minimum cycle time to be allowed from the system perspective unless polling techniques are used. It is the maximum time the device  
requires to automatically complete the internal write operation.  
12. tWPH and tDW are periodically sampled and not 100% tested.  
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X28HC256  
WE Controlled Write Cycle  
t
WC  
ADDRESS  
t
t
AH  
AS  
t
t
CS  
CH  
CE  
OE  
t
t
OEH  
OES  
t
WP  
WE  
DATA IN  
DATA OUT  
DATA VALID  
HIGH Z  
t
t
DH  
DS  
FIGURE 4. WE CONTROLLED WRITE CYCLE  
CE Controlled Write Cycle  
t
WC  
ADDRESS  
t
t
AH  
AS  
t
CW  
CE  
OE  
t
OES  
t
OEH  
t
t
CH  
CS  
WE  
DATA VALID  
DATA IN  
t
t
DH  
DS  
HIGH Z  
DATA OUT  
FIGURE 5. CE CONTROLLED WRITE CYCLE  
S
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X28HC256  
Page Write Cycle  
OE  
(Note 13)  
CE  
t
t
BLC  
WP  
WE  
t
WPH  
ADDRESS  
(Note 14, 15)  
LAST BYTE  
BYTE n + 2  
I/O  
BYTE 0  
BYTE 1  
BYTE 2  
BYTE n  
BYTE n + 1  
t
WC  
FIGURE 6. PAGE WRITE CYCLE  
NOTES:  
13. Between successive byte writes within a page write operation, OE can be strobed LOW: e.g. this can be done with CE and WE HIGH to fetch data  
from another memory device within the system for the next write; or with WE HIGH and CE LOW effectively performing a polling operation.  
14. The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform to either the CE  
or WE controlled write cycle timing.  
15. For each successive write within the page write operation, A7 to A15 should be the same or writes to an unknown address could occur.  
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X28HC256  
DATA Polling Timing Diagram (Note 16)  
ADDRESS  
A
A
A
n
n
n
CE  
WE  
t
t
OEH  
OES  
OE  
t
DW  
D
= X  
D
= X  
D = X  
OUT  
I/O  
7
IN  
OUT  
t
WC  
FIGURE 6. DATA POLLING TIMING DIAGRAM  
Toggle Bit Timing Diagram (Note 16)  
CE  
WE  
t
OES  
t
OEH  
OE  
t
DW  
HIGH Z  
(Note 17)  
I/O  
6
(Note 17)  
t
WC  
FIGURE 7. TOGGLE BIT TIMING DIAGRAM  
NOTES:  
16. Polling operations are by definition read cycles and are therefore subject to read cycle timings.  
17. I/O6 beginning and ending state will vary, depending upon actual tWC  
.
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X28HC256  
DATA Polling (I/O )  
Device Operation  
7
The X28HC256 features DATA polling as a method to indicate to the  
host system that the byte write or page write cycle has completed.  
DATA polling allows a simple bit test operation to determine the  
status of the X28HC256. This eliminates additional interrupt inputs  
or external hardware. During the internal programming cycle, any  
attempt to read the last byte written will produce the complement of  
that data on I/O7 (i.e., write data = 0xxx xxxx, read data = 1xxx xxxx).  
Once the programming cycle is complete, I/O7 will reflect true data.  
Read  
Read operations are initiated by both OE and CE LOW. The read  
operation is terminated by either CE or OE returning HIGH. This  
two line control architecture eliminates bus contention in a  
system environment. The data bus will be in a high impedance  
state when either OE or CE is HIGH.  
Write  
Toggle Bit (I/O )  
6
Write operations are initiated when both CE and WE are LOW and  
OE is HIGH. The X28HC256 supports both a CE and WE controlled  
write cycle. That is, the address is latched by the falling edge of  
either CE or WE, whichever occurs last. Similarly, the data is  
latched internally by the rising edge of either CE or WE, whichever  
occurs first. A byte write operation, once initiated, will  
The X28HC256 also provides another method for determining  
when the internal write cycle is complete. During the internal  
programming cycle I/O6 will toggle from high-to-low and high-to-  
low on subsequent attempts to read the device. When the  
internal cycle is complete the toggling will cease and the device  
will be accessible for additional read and write operations.  
automatically continue to completion, typically within 3ms.  
DATA Polling I/O  
Page Write Operation  
DATA polling can effectively halve the time for writing to the  
X28HC256. The timing diagram in Figure 8 on page 11  
illustrates the sequence of events on the bus. The software flow  
diagram in Figure 9 on page 11 illustrates one method of  
implementing the routine.  
The page write feature of the X28HC256 allows the entire  
memory to be written in typically 0.8 seconds. The page write  
allows up to 128 bytes of data to be consecutively written to the  
X28HC256, prior to the commencement of the internal  
programming cycle. The host can fetch data from another device  
within the system during a page write operation (change the  
source address), but the page address (A7 through A14) for each  
subsequent valid write cycle to the part during this operation  
must be the same as the initial page address.  
The Toggle Bit I/O  
The toggle bit can eliminate the chore of saving and fetching the  
last address and data in order to implement DATA polling. This  
can be especially helpful in an array comprised of multiple  
X28HC256 memories that is frequently updated. The timing  
diagram in Figure 10 on page 12 illustrates the sequence of  
events on the bus. The software flow diagram in Figure 11 on  
page 12 illustrates a method for polling the toggle bit.  
The page write mode can be initiated during any write operation.  
Following the initial byte write cycle, the host can write an  
additional one to 127 bytes in the same manner as the first byte  
was written. Each successive byte load cycle, started by the WE  
high-to-low transition, must begin within 100µs of the falling  
edge of the preceding WE. If a subsequent WE high-to-low  
transition is not detected within 100µs, the internal automatic  
programming cycle will commence. There is no page write  
window limitation. Effectively the page write window is infinitely  
wide, so long as the host continues to access the device within  
the byte load cycle time of 100µs.  
Hardware Data Protection  
The X28HC256 provides two hardware features that protects  
nonvolatile data from inadvertent writes.  
• Default VCC Sense — All write functions are inhibited when VCC  
is 3.5V typically.  
• Write Inhibit — Holding either OE low, WE high, or CE high will  
prevent an inadvertent write cycle during power-up and  
power-down, maintaining data integrity.  
Write Operation Status Bits  
The X28HC256 provides the user two write operation status bits.  
These can be used to optimize a system write cycle time. The  
status bits are mapped onto the I/O bus as shown in Figure 7.  
I/O  
DP  
TB  
5
4
3
2
1
0
RESERVED  
TOGGLE BIT  
DATA POLLING  
FIGURE 7. STATUS BIT ASSIGNMENT  
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10  
X28HC256  
LAST  
WRITE  
WE  
CE  
OE  
V
IH  
V
OH  
HIGH Z  
I/O  
7
V
OL  
X28HC256  
READY  
A
TO A  
An  
An  
An  
An  
An  
An  
An  
0
14  
FIGURE 8. DATA POLLING BUS SEQUENCE  
WRITE DATA  
NO  
WRITES  
COMPLETE?  
YES  
SAVE LAST DATA  
AND ADDRESS  
READ LAST  
ADDRESS  
IO  
7
NO  
COMPARE?  
YES  
X28HC256  
READY  
FIGURE 9. DATA POLLING SOFTWARE FLOW  
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11  
X28HC256  
LAST  
WRITE  
WE  
CE  
OE  
V
HIGH Z  
OH  
I/O  
6
V
OL  
(Note 18)  
(Note 18)  
X28C512, X28C513  
READY  
NOTE:  
18. I/O6 Beginning and ending state of I/O6 will vary.  
FIGURE 10. TOGGLE BIT BUS SEQUENCE  
¬
Software Data Protection  
The X28HC256 offers a software controlled data protection  
feature. The X28HC256 is shipped from Intersil with the software  
data protection NOT ENABLED; that is, the device will be in the  
standard operating mode. In this mode data should be protected  
during power-up/down operations through the use of external  
circuits. The host would then have open read and write access of  
the device once VCC was stable.  
LAST WRITE  
YES  
LOAD ACCUM  
FROM ADDR n  
The X28HC256 can be automatically protected during power-up  
and power-down (without the need for external circuits) by  
employing the software data protection feature. The internal  
software data protection circuit is enabled after the first write  
operation, utilizing the software algorithm. This circuit is  
nonvolatile, and will remain set for the life of the device unless  
the reset command is issued.  
COMPARE  
ACCUM WITH  
ADDR n  
Once the software protection is enabled, the X28HC256 is also  
protected from inadvertent and accidental writes in the powered  
up state. That is, the software algorithm must be issued prior to  
writing additional data to the device.  
NO  
COMPARE  
OK?  
YES  
Software Algorithm  
X28C256  
READY  
Selecting the software data protection mode requires the host  
system to precede data write operations by a series of three  
write operations to three specific addresses. Refer to  
Figures 12 and 13 on page 13 for the sequence. The 3 byte  
sequence opens the page write window, enabling the host to  
write from one to 128 bytes of data. Once the page load cycle  
has been completed, the device will automatically be returned  
to the data protected state.  
FIGURE 11. TOGGLE BIT SOFTWARE FLOW  
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X28HC256  
Software Data Protection  
V
CC  
(V  
)
CC  
0V  
DATA  
ADDRESS  
AA  
5555  
55  
2AAA  
A0  
5555  
WRITES  
OK  
WRITE  
PROTECTED  
t
WC  
CE  
£t  
BYTE  
OR  
BLC MAX  
WE  
AGE  
FIGURE 12. TIMING SEQUENCE BYTE OR PAGE WRITE  
Regardless of whether the device has previously been protected  
or not, once the software data protection algorithm is used and  
data has been written, the X28HC256 will automatically disable  
further writes unless another command is issued to cancel it. If  
no further commands are issued the X28HC256 will be write  
protected during power-down and after any subsequent  
power-up.  
WRITE DATA AA  
TO ADDRESS  
5555  
WRITE DATA 55  
TO ADDRESS  
2AAA  
Note: Once initiated, the sequence of write operations should not  
be interrupted.  
Resetting Software Data  
Protection  
WRITE DATA A0  
TO ADDRESS  
5555  
In the event the user wants to deactivate the software data  
protection feature for testing or reprogramming in an EEPROM  
programmer, the following six step algorithm will reset the  
internal protection circuit. After tWC, the X28HC256 will be in  
standard operating mode.  
BYTE/PAGE  
LOAD ENABLED  
WRITE DATA XX  
TO ANY  
ADDRESS  
OPTIONAL  
BYTE/PAGE  
Note: Once initiated, the sequence of write operations should not  
be interrupted.  
LOAD OPERATION  
WRITE LAST  
BYTE TO  
LAST ADDRESS  
AFTER t  
WC  
RE-ENTERS DATA  
PROTECTED STATE  
FIGURE 13. WRITE SEQUENCE FOR SOFTWARE DATA  
PROTECTION  
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X28HC256  
V
CC  
AA  
5555  
55  
2AAA  
80  
5555  
AA  
5555  
55  
2AAA  
20  
5555  
STANDARD  
OPERATING  
MODE  
DATA  
ADDRESS  
t
WC  
CE  
WE  
FIGURE 14. RESET SOFTWARE DATA PROTECTION TIMING SEQUENCE  
System Considerations  
WRITE DATA AA  
TO ADDRESS  
5555  
Because the X28HC256 is frequently used in large memory  
arrays, it is provided with a two line control architecture for both  
read and write operations. Proper usage can provide the lowest  
possible power dissipation and eliminate the possibility of  
contention where multiple I/O pins share the same bus.  
WRITE DATA 55  
TO ADDRESS  
2AAA  
To gain the most benefit, it is recommended that CE be decoded  
from the address bus and be used as the primary device  
selection input. Both OE and WE would then be common among  
all devices in the array. For a read operation, this assures that all  
deselected devices are in their standby mode and that only the  
selected device(s) is/are outputting data on the bus.  
WRITE DATA 80  
TO ADDRESS  
5555  
Because the X28HC256 has two power modes, standby and  
active, proper decoupling of the memory array is of prime  
concern. Enabling CE will cause transient current spikes. The  
magnitude of these spikes is dependent on the output capacitive  
loading of the l/Os. Therefore, the larger the array sharing a  
common bus, the larger the transient spikes. The voltage peaks  
associated with the current transients can be suppressed by the  
proper selection and placement of decoupling capacitors. As a  
minimum, it is recommended that a 0.1µF high frequency  
ceramic capacitor be used between VCC and VSS at each device.  
Depending on the size of the array, the value of the capacitor  
may have to be larger.  
WRITE DATA AA  
TO ADDRESS  
5555  
WRITE DATA 55  
TO ADDRESS  
2AAA  
WRITE DATA 20  
TO ADDRESS  
5555  
In addition, it is recommended that a 4.7µF electrolytic bulk  
capacitor be placed between VCC and VSS for each eight devices  
employed in the array. This bulk capacitor is employed to  
overcome the voltage droop caused by the inductive effects of  
the PC board traces.  
AFTER t  
,
WC  
RE-ENTERS  
UNPROTECTED  
STATE  
FIGURE 15. WRITE SEQUENCE FOR RESETTING SOFTWARE DATA  
PROTECTION  
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X28HC256  
Revision History  
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make sure that  
you have the latest revision.  
DATE  
REVISION  
FN8108.5  
CHANGE  
August 27, 2015  
Removed the reference to Military part under “Recommended Operating Conditions” and “Thermal Information”  
Removed X28HC256J-15, X28HC256SI-15, X28HC256SIZ-15, X28HC256J-12, X28HC256S-12, and  
X28HC256S-90 from the Ordering Information table on page 2.  
Updated Pin Description table on page 3.  
March 31, 2015  
FN8108.4  
-Updated entire datasheet to Intersil new standard.  
-Added revision history and about Intersil verbiage.  
-Third paragraph on page 1 updated From:  
Endurance for the X28HC256 is specified as a minimum 1,000,000 write cycles per byte and an inherent data  
retention of 100 years.  
To:  
Endurance for the X28HC256 is specified as a minimum 100,000 write cycles per byte and an inherent data  
retention of 100 years.  
-Features section on page 1 updated From:  
Highly reliable Direct Write™ cell  
- Endurance: 1,000,000 cycles  
To:  
Highly reliable Direct Write™ cell  
- Endurance: 100,000 cycles  
“Endurance and Data Retention” on page 4 updated Endurance from 1,000,000 to 100,000.  
-Ordering information table on page 2: Removed obsolete part numbers X28HC256P-15, X28HC256PI-15,  
X28HC256P-12, X28HC256PI-12, X28HC256P-90.  
-Ordering information table on page 2 updated the “Access time’ section.  
Thermal Information table on page 4 updated “Temperature Under Bias” section for X28HC256 value from 10°C  
to +85°C to -10°C to +85°C.  
“DC Electrical Specifications” on page 4, added a note to Min and Max values.  
Removed note in Electrical Spec Table that referenced an obsolete part.  
About Intersil  
Intersil Corporation is a leading provider of innovative power management and precision analog solutions. The company's products  
address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets.  
For the most updated datasheet, application notes, related documentation and related parts, please see the respective product  
information page found at www.intersil.com.  
You may report errors or suggestions for improving this datasheet by visiting www.intersil.com/ask.  
Reliability reports are also available from our website at www.intersil.com/support  
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15  
X28HC256  
Small Outline Plastic Packages (SOIC)  
M28.3 (JEDEC MS-013-AE ISSUE C)  
28 LEAD WIDE BODY SMALL OUTLINE PLASTIC PACKAGE  
N
INDEX  
0.25(0.010)  
M
B M  
H
AREA  
INCHES MILLIMETERS  
E
SYMBOL  
MIN  
MAX  
MIN  
2.35  
0.10  
0.33  
0.23  
MAX  
2.65  
NOTES  
-B-  
A
A1  
B
C
D
E
e
0.0926  
0.0040  
0.013  
0.1043  
0.0118  
0.0200  
0.0125  
-
0.30  
-
1
2
3
L
0.51  
9
SEATING PLANE  
A
0.0091  
0.6969  
0.2914  
0.32  
-
0.7125 17.70  
18.10  
7.60  
3
-A-  
h x 45o  
D
0.2992  
7.40  
4
0.05 BSC  
1.27 BSC  
-
-C-  
a
H
h
0.394  
0.01  
0.419  
0.029  
0.050  
10.00  
0.25  
0.40  
10.65  
0.75  
1.27  
-
e
A1  
C
5
B
0.10(0.004)  
L
0.016  
6
0.25(0.010) M  
C
A M B S  
N
28  
28  
7
0o  
8o  
0o  
8o  
-
Rev. 1, 1/13  
NOTES:  
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of  
Publication Number 95.  
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.  
3. Dimension “D” does not include mold flash, protrusions or gate burrs.  
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006  
inch) per side.  
TYPICAL RECOMMENDED LAND PATTERN  
4. Dimension “E” does not include interlead flash or protrusions. Interlead  
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.  
(1.50mm)  
5. The chamfer on the body is optional. If it is not present, a visual index  
feature must be located within the crosshatched area.  
(9.38mm)  
6. “L” is the length of terminal for soldering to a substrate.  
7. “N” is the number of terminal positions.  
8. Terminal numbers are shown for reference only.  
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above  
the seating plane, shall not exceed a maximum value of 0.61mm  
(0.024 inch)  
(1.27mm TYP)  
(0.51mm TYP)  
10. Controlling dimension: MILLIMETER. Converted inch dimensions are  
not necessarily exact.  
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16  
X28HC256  
Plastic Leaded Chip Carrier Packages (PLCC)  
0.042 (1.07)  
0.056 (1.42)  
PIN (1)  
IDENTIFIER  
0.004 (0.10)  
C
0.042 (1.07)  
0.048 (1.22)  
N32.45x55 (JEDEC MS-016AE ISSUE A)  
0.050 (1.27) TP  
ND  
32 LEAD PLASTIC LEADED CHIP CARRIER PACKAGE  
INCHES MILLIMETERS  
0.025 (0.64)  
0.045 (1.14)  
R
C
L
SYMBOL  
MIN  
MAX  
MIN  
3.18  
MAX  
3.55  
NOTES  
A
A1  
D
0.125  
0.060  
0.485  
0.447  
0.188  
0.585  
0.547  
0.238  
0.140  
0.095  
0.495  
0.453  
0.223  
0.595  
0.553  
0.273  
-
D2/E2  
D2/E2  
1.53  
2.41  
-
12.32  
11.36  
4.78  
12.57  
11.50  
5.66  
-
C
L
D1  
D2  
E
3
E1  
E
4, 5  
NE  
14.86  
13.90  
6.05  
15.11  
14.04  
6.93  
-
VIEW “A”  
E1  
E2  
N
3
4, 5  
0.015 (0.38)  
MIN  
28  
7
28  
7
6
A1  
D1  
D
ND  
NE  
7
7
A
9
9
SEATING  
PLANE  
0.020 (0.51) MAX  
3 PLCS  
-C-  
Rev. 0 7/98  
0.026 (0.66)  
0.032 (0.81)  
NOTES:  
0.050 (1.27)  
MIN  
1. Controlling dimension: INCH. Converted millimeter dimen-  
sions are not necessarily exact.  
2. Dimensions and tolerancing per ANSI Y14.5M-1982.  
3. Dimensions D1 and E1 do not include mold protrusions. Al-  
lowable mold protrusion is 0.010 inch (0.25mm) per side.  
Dimensions D1 and E1 include mold mismatch and are mea-  
sured at the extreme material condition at the body parting  
line.  
0.013 (0.33)  
0.021 (0.53)  
0.025 (0.64)  
MIN  
(0.12)  
0.005  
M
A S - B S D S  
-C-  
4. To be measured at seating plane  
contact point.  
VIEW “A” TYP.  
5. Centerline to be determined where center leads exit plastic  
body.  
6. “N” is the number of terminal positions.  
7. ND denotes the number of leads on the two shorts sides of the  
package, one of which contains pin #1. NE denotes the num-  
ber of leads on the two long sides of the package.  
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17  
X28HC256  
Small Outline Package Family (SO)  
A
D
h X 45°  
(N/2)+1  
N
A
PIN #1  
I.D. MARK  
E1  
E
c
SEE DETAIL “X”  
1
(N/2)  
B
L1  
0.010 M  
C A B  
e
H
C
A2  
A1  
GAUGE  
PLANE  
SEATING  
PLANE  
0.010  
L
4° ±4°  
0.004 C  
b
0.010 M  
C
A
B
DETAIL X  
MDP0027  
SMALL OUTLINE PACKAGE FAMILY (SO)  
INCHES  
SO16  
(0.150”)  
SO16 (0.300”)  
(SOL-16)  
SO20  
(SOL-20)  
SO24  
(SOL-24)  
SO28  
(SOL-28)  
SYMBOL  
SO-8  
0.068  
0.006  
0.057  
0.017  
0.009  
0.193  
0.236  
0.154  
0.050  
0.025  
0.041  
0.013  
8
SO-14  
0.068  
0.006  
0.057  
0.017  
0.009  
0.341  
0.236  
0.154  
0.050  
0.025  
0.041  
0.013  
14  
TOLERANCE  
MAX  
NOTES  
A
A1  
A2  
b
0.068  
0.006  
0.057  
0.017  
0.009  
0.390  
0.236  
0.154  
0.050  
0.025  
0.041  
0.013  
16  
0.104  
0.007  
0.092  
0.017  
0.011  
0.406  
0.406  
0.295  
0.050  
0.030  
0.056  
0.020  
16  
0.104  
0.007  
0.092  
0.017  
0.011  
0.504  
0.406  
0.295  
0.050  
0.030  
0.056  
0.020  
20  
0.104  
0.007  
0.092  
0.017  
0.011  
0.606  
0.406  
0.295  
0.050  
0.030  
0.056  
0.020  
24  
0.104  
0.007  
0.092  
0.017  
0.011  
0.704  
0.406  
0.295  
0.050  
0.030  
0.056  
0.020  
28  
-
0.003  
0.002  
0.003  
0.001  
0.004  
0.008  
0.004  
Basic  
-
-
-
c
-
D
1, 3  
E
-
E1  
e
2, 3  
-
L
0.009  
Basic  
-
L1  
h
-
Reference  
Reference  
-
N
-
Rev. M 2/07  
NOTES:  
1. Plastic or metal protrusions of 0.006” maximum per side are not included.  
2. Plastic interlead protrusions of 0.010” maximum per side are not included.  
3. Dimensions “D” and “E1” are measured at Datum Plane “H”.  
4. Dimensioning and tolerancing per ASME Y14.5M-1994  
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18  
X28HC256  
Dual-In-Line Plastic Packages (PDIP)  
E28.6 (JEDEC MS-011-AB ISSUE B)  
N
28 LEAD DUAL-IN-LINE PLASTIC PACKAGE  
INCHES MILLIMETERS  
E1  
INDEX  
AREA  
1 2  
3
N/2  
SYMBOL  
MIN  
MAX  
0.250  
-
MIN  
-
MAX  
6.35  
-
NOTES  
-B-  
-C-  
A
A1  
A2  
B
-
4
-A-  
D
E
0.015  
0.125  
0.014  
0.030  
0.008  
1.380  
0.005  
0.600  
0.485  
0.39  
3.18  
0.356  
0.77  
0.204  
4
BASE  
PLANE  
0.195  
0.022  
0.070  
0.015  
1.565  
-
4.95  
0.558  
1.77  
0.381  
39.7  
-
-
A2  
A
-
SEATING  
PLANE  
L
C
L
B1  
C
8
D1  
B1  
eA  
-
A1  
A
D1  
e
D
35.1  
5
eC  
C
B
eB  
D1  
E
0.13  
15.24  
12.32  
5
0.010 (0.25) M  
C
B S  
0.625  
0.580  
15.87  
14.73  
6
NOTES:  
E1  
e
5
1. Controlling Dimensions: INCH. In case of conflict between English and  
Metric dimensions, the inch dimensions control.  
0.100 BSC  
0.600 BSC  
2.54 BSC  
15.24 BSC  
-
eA  
eB  
L
6
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.  
3. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of  
Publication No. 95.  
-
0.700  
0.200  
-
17.78  
5.08  
7
0.115  
2.93  
4
9
4. Dimensions A, A1 and L are measured with the package seated in  
N
28  
28  
JEDEC seating plane gauge GS-3.  
Rev. 1 12/00  
5. D, D1, and E1 dimensions do not include mold flash or protrusions.  
Mold flash or protrusions shall not exceed 0.010 inch (0.25mm).  
eA  
6. E and  
ular to datum  
7. eB and eC are measured at the lead tips with the leads unconstrained.  
C must be zero or greater.  
are measured with the leads constrained to be perpendic-  
-C-  
.
e
8. B1 maximum dimensions do not include dambar protrusions. Dambar  
protrusions shall not exceed 0.010 inch (0.25mm).  
9. N is the maximum number of terminal positions.  
10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3, E28.3,  
E42.6 will have a B1 dimension of 0.030 - 0.045 inch (0.76 - 1.14mm).  
For additional products, see www.intersil.com/en/products.html  
Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted  
in the quality certifications found at www.intersil.com/en/support/qualandreliability.html  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time  
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be  
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third  
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
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19  

相关型号:

X28HC256JZ-15

5 Volt, Byte Alterable EEPROM

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INTERSIL

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RENESAS

X28HC256JZ-90

5V, Byte Alterable EEPROM

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INTERSIL

X28HC256JZ-90

LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM

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ROCHESTER

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RENESAS

X28HC256K-12

5 Volt, Byte Alterable EEPROM

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INTERSIL

X28HC256K-12

5 Volt, Byte Alterable E2PROM

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XICOR

X28HC256K-12

32KX8 EEPROM 5V, 120ns, CPGA28, CERAMIC, PGA-28

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RENESAS

X28HC256K-15

5 Volt, Byte Alterable EEPROM

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INTERSIL

X28HC256K-15

5 Volt, Byte Alterable E2PROM

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XICOR

X28HC256K-70

5 Volt, Byte Alterable EEPROM

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INTERSIL

X28HC256K-70

5 Volt, Byte Alterable E2PROM

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XICOR