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2SD1209 [RENESAS]

Silicon NPN Epitaxial, Darlington; 硅NPN外延，达林顿

2SD1209


元器件型号：	2SD1209
生产厂家：	RENESAS TECHNOLOGY CORP
描述和应用：	Silicon NPN Epitaxial, Darlington 硅NPN外延，达林顿
PDF文件：	总6页 (文件大小：157K)
下载文档：	下载PDF数据表文档文件
型号参数：2SD1209参数

2SD1209(K)

TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-92

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13 ETC

2SD1209(K)RF

100mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR

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0 RENESAS

2SD1209(K)RR

Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon

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0 HITACHI

2SD1209(K)RR

100 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR

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0 RENESAS

2SD1209(K)TZ

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92MOD, 3 PIN

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0 HITACHI

2SD1209(K)TZ

1000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN

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0 RENESAS

2SD1209K

Silicon NPN Epitaxial, Darlington

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27 HITACHI

2SD1209K

Silicon NPN Epitaxial, Darlington

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19 RENESAS

2SD1209KTZ-E

Silicon NPN Epitaxial, Darlington

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26 RENESAS

2SD1210

isc Silicon NPN Darlington Power Transistor

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25 ISC

2SD1210

NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR

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89 ETC

2SD1211

Silicon NPN epitaxial planer type(For low-frequency amplification)

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46 PANASONIC

2SD1211R

TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 500MA I(C) | SC-51

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26 ETC

2SD1211S

TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 500MA I(C) | SC-51

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9 ETC

2SD1212

30V/12A High-Speed Switching Applications

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36 SANYO

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