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元器件品牌
2SD1606
[RENESAS]
Silicon NPN Triple Diffused; 硅NPN三重扩散
元器件型号：
2SD1606
生产厂家：
RENESAS TECHNOLOGY CORP
描述和应用：
Silicon NPN Triple Diffused
硅NPN三重扩散
晶体 晶体管 功率双极晶体管 放大器 局域网
PDF文件：
总7页 (文件大小：146K)
下载文档：
下载PDF数据表文档文件
型号参数：2SD1606参数
查看货源
2SD1608
Medium Speed Power Switching
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52
ETC
2SD1608
Silicon NPN Darlington Power Transistor
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156
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11
ISC
2SD1608
isc Silicon NPN Darlington Power Transistor
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156
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17
ISC
2SD1609
NPN EPITAXIAL PLANAR TRANSISTOR
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156
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78
UTC-IC
2SD1609
Silicon NPN Epitaxial
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156
-
164
HITACHI
2SD1609B
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-126
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18
ETC
2SD1609B
Power Bipolar Transistor, 0.1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-126MOD, 3 PIN
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3
HITACHI
2SD1609C
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-126
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27
ETC
2SD1609C
Power Bipolar Transistor, 0.1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-126MOD, 3 PIN
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0
HITACHI
2SD1609D
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-126
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17
ETC
2SD1609D
0.1 A, 160 V, NPN, Si, POWER TRANSISTOR, TO-126MOD, 3 PIN
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0
HITACHI
2SD1610
Silicon NPN Epitaxial
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156
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55
HITACHI
2SD1610B
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126
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15
ETC
2SD1610B
0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126MOD, 3 PIN
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0
HITACHI
2SD1610C
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126
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19
ETC
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