2SK1957-E [RENESAS]

Silicon N Channel MOS FET; 硅N沟道MOS FET
2SK1957-E
元器件型号: 2SK1957-E
生产厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述和应用:

Silicon N Channel MOS FET
硅N沟道MOS FET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件: 总7页 (文件大小:81K)
下载文档:  下载PDF数据表文档文件
型号参数:2SK1957-E参数

2SK1958

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

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114 NEC

2SK1958

Small Signal Field-Effect Transistor, 0.1A I(D), 16V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 NEC

2SK1958-A

Small Signal Field-Effect Transistor, 0.1A I(D), 16V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 NEC

2SK1958-L-A

TRANSISTOR,MOSFET,N-CHANNEL,16V V(BR)DSS,100MA I(D),SOT-323

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0 RENESAS

2SK1958-L-AT

TRANSISTOR,MOSFET,N-CHANNEL,16V V(BR)DSS,100MA I(D),SOT-323

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0 RENESAS

2SK1958-T1

2SK1958-T1

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0 RENESAS

2SK1958-T1

Small Signal Field-Effect Transistor, 0.1A I(D), 16V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 NEC

2SK1958-T1-A

Small Signal Field-Effect Transistor, 0.1A I(D), 16V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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1 NEC

2SK1958-T2

2SK1958-T2

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0 RENESAS

2SK1958-T2-A

TRANSISTOR,MOSFET,N-CHANNEL,16V V(BR)DSS,100MA I(D),SOT-323

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0 RENESAS

2SK1959

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

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114 NEC

2SK1959

MOS Field Effect Transistor

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22 KEXIN

2SK1959

Gate can be driven by 1.5V Low ON resistance RDS(on)=3.2 MAX

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7 TYSEMI

2SK1959-AZ

Power Field-Effect Transistor, 2A I(D), 16V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 NEC

2SK1960

Gate can be driven by 1.5V Low ON resistance RDS(on)=0.8 MAX

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12 TYSEMI