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元器件品牌
BB505MES
[RENESAS]
Build in Biasing Circuit MOS FET IC UHF RF Amplifier; 打造偏置电路MOS FET的IC UHF射频放大器
元器件型号：
BB505MES
生产厂家：
RENESAS TECHNOLOGY CORP
描述和应用：
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
打造偏置电路MOS FET的IC UHF射频放大器
晶体 射频放大器 小信号场效应晶体管 射频小信号场效应晶体管 光电二极管
PDF文件：
总9页 (文件大小：188K)
下载文档：
下载PDF数据表文档文件
型号参数：BB505MES参数
查看货源
BB506C
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
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RENESAS
BB506C_11
Built in Biasing Circuit MOS FET IC
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156
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6
RENESAS
BB506CFS
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
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37
RENESAS
BB506CFS-TL
暂无描述
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0
RENESAS
BB506CFS-TL-E
Built in Biasing Circuit MOS FET IC
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16
RENESAS
BB506CFS-TL-H
Built in Biasing Circuit MOS FET IC
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7
RENESAS
BB506CFS-TR
TRANSISTOR,MOSFET,N-CHANNEL,6V V(BR)DSS,30MA I(D),SOT-343R
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0
RENESAS
BB506M
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
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32
RENESAS
BB506MFS-TL-E
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
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26
RENESAS
BB506MFS-TL-E
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, SC-61AA, MPAK-4
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156
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0
RENESAS
BB506MFS-TL-H
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MINIMOLD, SC-61AA, SOT-143MOD, MPAK-4
Warning
: Undefined variable $rtag in
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156
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0
RENESAS
BB510
SCHOTTKY DIODES
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24
ETC
BB512
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ˇ 8 V)
Warning
: Undefined variable $rtag in
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156
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93
INFINEON
BB515
Silicon Variable Capacitance Diode (For UHF and VHF TV/VTR tuners Large capacitance ratio Low series resistance)
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: Undefined variable $rtag in
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156
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231
INFINEON
BB515
DIODE UHF BAND, 17.75 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Variable Capacitance Diode
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0
PHILIPS
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