BCR4CM-16LH [RENESAS]

Triac Medium Power Use IFGTI, IRGTI, IRGT III : 35 mA or 10mA(IGT item:1); 三端双向可控硅中功率使用IFGTI , IRGTI , IRGT三:35 mA或10毫安( IGT项目: 1 )
BCR4CM-16LH
元器件型号: BCR4CM-16LH
生产厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述和应用:

Triac Medium Power Use IFGTI, IRGTI, IRGT III : 35 mA or 10mA(IGT item:1)
三端双向可控硅中功率使用IFGTI , IRGTI , IRGT三:35 mA或10毫安( IGT项目: 1 )

可控硅
PDF文件: 总8页 (文件大小:94K)
下载文档:  下载PDF数据表文档文件
型号参数:BCR4CM-16LH参数

BCR5

MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

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24 MITSUBISHI

BCR5

MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

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10 MITSUBISHI

BCR5

MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

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13 MITSUBISHI

BCR5

MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

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11 MITSUBISHI

BCR5

MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

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16 MITSUBISHI

BCR5

MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

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15 MITSUBISHI

BCR5

MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

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19 MITSUBISHI

BCR5

MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

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50 MITSUBISHI

BCR503

NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, drive circuit)

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-
55 INFINEON

BCR503

NPN Silicon Digital Transistor

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-
159 INFINEON

BCR503

NPN Silicon Digital Transistor

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101 INFINEON

BCR503_07

NPN Silicon Digital Transistor

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-
9 INFINEON

BCR503E6327

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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0 INFINEON

BCR503Q62702C2509

TRANSISTOR DIGITAL SOT23

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25 INFINEON

BCR505

NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

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106 INFINEON