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元器件品牌
FS10AS-2-T13
[RENESAS]
High-Speed Switching Use Nch Power MOS FET; 高速开关用N沟道功率MOS FET
元器件型号：
FS10AS-2-T13
生产厂家：
RENESAS TECHNOLOGY CORP
描述和应用：
High-Speed Switching Use Nch Power MOS FET
高速开关用N沟道功率MOS FET
晶体 开关 晶体管 功率场效应晶体管 脉冲
PDF文件：
总7页 (文件大小：198K)
下载文档：
下载PDF数据表文档文件
型号参数：FS10AS-2-T13参数
查看货源
FS10AS-2-T2
Power Field-Effect Transistor, 10A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
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0
MITSUBISHI
FS10AS3
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 10A I(D) | TO-252
Warning
: Undefined variable $rtag in
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24
ETC
FS10AS-3
HIGH-SPEED SWITCHING USE
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35
MITSUBISHI
FS10AS-3
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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53
POWEREX
FS10AS-3
High-Speed Switching Use Nch Power MOS FET
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11
RENESAS
FS10AS-3
Power Field-Effect Transistor, 10A I(D), 150V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-3, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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0
POWEREX
FS10AS-3-T13
High-Speed Switching Use Nch Power MOS FET
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29
RENESAS
FS10ASH03
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-252
Warning
: Undefined variable $rtag in
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21
ETC
FS10ASH-03-T2
Power Field-Effect Transistor, 10A I(D), 30V, 0.141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP3, 4 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
MITSUBISHI
FS10ASH06
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-252
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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14
ETC
FS10ASH-06
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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20
POWEREX
FS10ASH-06
HIGH-SPEED SWITCHING USE
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156
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13
MITSUBISHI
FS10ASH-06
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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33
RENESAS
FS10ASH-06-T1
Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
MITSUBISHI
FS10ASH-06-T2
Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
MITSUBISHI
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