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元器件品牌
FS10ASJ-06F
[RENESAS]
High-Speed Switching Use Nch Power MOS FET; 高速开关用N沟道功率MOS FET
元器件型号：
FS10ASJ-06F
生产厂家：
RENESAS TECHNOLOGY CORP
描述和应用：
High-Speed Switching Use Nch Power MOS FET
高速开关用N沟道功率MOS FET
开关
PDF文件：
总7页 (文件大小：103K)
下载文档：
下载PDF数据表文档文件
型号参数：FS10ASJ-06F参数
查看货源
FS10ASJ2
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) | TO-252
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ETC
FS10ASJ-2
HIGH-SPEED SWITCHING USE
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MITSUBISHI
FS10ASJ-2
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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POWEREX
FS10ASJ-2
High-Speed Switching Use Nch Power MOS FET
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13
RENESAS
FS10ASJ-2-T1
Power Field-Effect Transistor, 10A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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0
MITSUBISHI
FS10ASJ-2-T13
High-Speed Switching Use Nch Power MOS FET
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10
RENESAS
FS10ASJ-2-T2
Power Field-Effect Transistor, 10A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
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0
MITSUBISHI
FS10ASJ3
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 10A I(D) | TO-252
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63
ETC
FS10ASJ-3
HIGH-SPEED SWITCHING USE
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40
MITSUBISHI
FS10ASJ-3
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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52
POWEREX
FS10ASJ-3
High-Speed Switching Use Nch Power MOS FET
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12
RENESAS
FS10ASJ-3-T1
Power Field-Effect Transistor, 10A I(D), 150V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
MITSUBISHI
FS10ASJ-3-T13
High-Speed Switching Use Nch Power MOS FET
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16
RENESAS
FS10ASJ-3-T2
Power Field-Effect Transistor, 10A I(D), 150V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
MITSUBISHI
FS10KM
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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156
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269
POWEREX
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