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元器件品牌
FS30KMJ-2-A8
[RENESAS]
High-Speed Switching Use Nch Power MOS FET; 高速开关用N沟道功率MOS FET
元器件型号：
FS30KMJ-2-A8
生产厂家：
RENESAS TECHNOLOGY CORP
描述和应用：
High-Speed Switching Use Nch Power MOS FET
高速开关用N沟道功率MOS FET
晶体 开关 晶体管 功率场效应晶体管 脉冲 局域网
PDF文件：
总7页 (文件大小：173K)
下载文档：
下载PDF数据表文档文件
型号参数：FS30KMJ-2-A8参数
查看货源
FS30KMJ3
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 30A I(D) | SOT-186
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72
ETC
FS30KMJ-3
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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72
POWEREX
FS30KMJ-3
HIGH-SPEED SWITCHING USE
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37
MITSUBISHI
FS30KMJ-3
High-Speed Switching Use Nch Power MOS FET
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RENESAS
FS30KMJ-3-A8
High-Speed Switching Use Nch Power MOS FET
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8
RENESAS
FS30R06KL
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 30A I(C)
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15
ETC
FS30R06VE3
IGBT-modules
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156
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48
EUPEC
FS30R06W1E3
EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC
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80
INFINEON
FS30R06W1E3_B11
EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
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31
INFINEON
FS30R06W1E3-B11
Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, MODULE-22
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0
INFINEON
FS30R06W1E3B11BOMA1
Insulated Gate Bipolar Transistor,
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156
-
0
INFINEON
FS30R06W1E3BOMA1
Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, MODULE-22
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0
INFINEON
FS30R06XE3
IGBT-modules
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156
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36
EUPEC
FS30R06XL4
Höchstzulässige Werte / maximum rated values
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21
INFINEON
FS30SM03
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 30A I(D) | TO-247VAR
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42
ETC
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