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元器件品牌
H5N2508DS
[RENESAS]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
元器件型号：
H5N2508DS
生产厂家：
RENESAS TECHNOLOGY CORP
描述和应用：
Silicon N Channel MOS FET High Speed Power Switching
硅N沟道MOS FET高速电源开关
晶体 开关 晶体管 功率场效应晶体管 脉冲 电源开关
PDF文件：
总8页 (文件大小：91K)
下载文档：
下载PDF数据表文档文件
型号参数：H5N2508DS参数
查看货源
H5N2508DS-E
暂无描述
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RENESAS
H5N2508DSTL-E
Silicon N Channel MOS FET High Speed Power Switching
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156
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5
RENESAS
H5N2509P
Silicon N Channel MOS FET High Speed Power Switching
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156
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24
RENESAS
H5N2509P
SILICON N CHANNEL MOSFET SWITCHING
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10
HITACHI
H5N2509P
SILICON N CHANNEL MOSFET SWITCHING
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13
HITACHI
H5N2509P-E
Silicon N Channel MOS FET High Speed Power Switching
Warning
: Undefined variable $rtag in
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156
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15
RENESAS
H5N2510D(L)-(2)
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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HITACHI
H5N2510DL
Silicon N Channel MOS FET High Speed Power Switching
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47
RENESAS
H5N2510DL
Datasheet|ADE-208-1379|MAR.20.01|35K
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ETC
H5N2510DL
Power Field-Effect Transistor, 5A I(D), 250V, 0.97ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
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HITACHI
H5N2510DL-E
Silicon N Channel MOS FET High Speed Power Switching
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6
RENESAS
H5N2510DS
Silicon N Channel MOS FET High Speed Power Switching
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15
RENESAS
H5N2510DS
Datasheet|ADE-208-1379|MAR.20.01|35K
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156
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8
ETC
H5N2510DS
Power Field-Effect Transistor, 5A I(D), 250V, 0.97ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
HITACHI
H5N2510DSTL-E
Silicon N Channel MOS FET High Speed Power Switching
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17
RENESAS
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