HAT2285WP_10 [RENESAS]

Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching; 硅N沟道功率MOS FET与肖特基二极管高速电源开关
HAT2285WP_10
元器件型号: HAT2285WP_10
生产厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述和应用:

Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
硅N沟道功率MOS FET与肖特基二极管高速电源开关

肖特基二极管 开关 电源开关
PDF文件: 总10页 (文件大小:109K)
下载文档:  下载PDF数据表文档文件
型号参数:HAT2285WP_10参数

HAT2285WP-EL-E

Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

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12 RENESAS

HAT2285WP-EL-E

Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

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15 RENESAS

HAT2287WP

Silicon N Channel Power MOS FET Power Switching

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18 RENESAS

HAT2287WP-EL-E

Silicon N Channel Power MOS FET Power Switching

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9 RENESAS

HAT2299WP

Silicon N Channel Power MOS FET Power Switching

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13 RENESAS

HAT2299WP-EL-E

Nch Single Power MOSFET 150V 14A 110mohm WPAK

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0 RENESAS

HAT-3

Precision Fixed Attenuator

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26 MINI

HAT-3

Fixed Attenuator, 0MHz Min, 2000MHz Max, CASE FF747

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0 MINI

HAT-3+

Precision Fixed Attenuator

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30 MINI

HAT-30

Fixed Attenuator, 0MHz Min, 2000MHz Max, CASE FF747

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0 MINI

HAT-30+

Fixed Attenuator, 0MHz Min, 2000MHz Max, ROHS COMPLIANT, CASE FF747

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0 MINI

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22 ETC

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58 ETC

HAT3004R

Silicon N Channel / P Channel Power MOS FET High Speed Power Switching

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96 RENESAS

HAT3004R

暂无描述

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0 HITACHI