800A0R3BT [RFMD]
280W GaN WIDE-BAND PULSED POWER AMPLIFIER; 280W的GaN宽波段脉冲功率放大器
| 型号： | 800A0R3BT |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 280W GaN WIDE-BAND PULSED POWER AMPLIFIER |
| 文件： | 总10页 (文件大小：745K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RFHA1020
280W GaN WIDE-BAND PULSED
POWER AMPLIFIER
Package: Flanged Ceramic, 2 Pin
Features
RF IN
VG
Pin 1 (CUT)
RF OUT
VD
Wideband Operation: 1.2GHz
to 1.4GHz
Pin 2
Advanced GaN HEMT
Technology
GND
BASE
Advanced Heat-Sink
Technology
Supports Multiple Pulse
Conditions
10% to 20% Duty Cycle
100s to 1ms Pulse Width
Integrated Matching
Components for High
Terminal Impedances
Functional Block Diagram
50V Operation Typical
Performance:
Output Pulsed Power: 280W
Pulse Width: 100s, Duty Cycle
10%
Small Signal Gain: 15dB
High Efficiency (55%)
- 40°C to 85°C Operating
Temperature
Product Description
The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-band
pulsed radar, air traffic control and surveillance and general purpose broadband
amplifier applications. Using an advanced high power density Gallium Nitride (GaN)
semiconductor process, these high performance amplifiers achieve high output
power, high efficiency, and flat gain over a broad frequency range in a single pack-
age. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged
ceramic package. The package provides excellent thermal stability through the use
of advanced heat sink and power dissipation technologies. Ease of integration is
accomplished through the incorporation of single, optimized matching networks
that provide wideband gain and power performance in a single amplifier.
Applications
Radar
Air Traffic Control and
Surveillance
Ordering Information
General Purpose Broadband
Amplifiers
RFHA1020S2
RFHA1020SB
RFHA1020SQ
RFHA1020SR
RFHA1020TR13
2-Piece sample bag
5-Piece bag
25-Piece bag
50 Pieces on 7” short reel
250 Pieces on 13” reel
RFHA1020PCBA-410 Fully assembled evaluation board 1.2GHz to 1.4GHz; 50V
operation
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120508
1 of 10
RFHA1020
Absolute Maximum Ratings
Parameter
Caution! ESD sensitive device.
Rating
150
Unit
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Drain Voltage (V )
D
Gate Voltage (V )
-8 to +2
155
V
G
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Gate Current (I )
mA
V
G
Operational Voltage
55
Ruggedness (VSWR)
10:1
Storage Temperature Range
-55 to +125
-40 to +85
°C
°C
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Operating Temperature Range (T )
C
Operating Junction Temperature (T )
250
°C
J
Human Body Model
Class 1A
Hours
MTTF (T < 200°C)
3.0E + 06
1.4E + 05
J
MTTF (T < 250°C)
J
Thermal Resistance, Rth (junction
to case)
T = 85°C, DC bias only
0.90
0.18
°C/W
C
T = 85°C, 100s pulse, 10% duty
C
cycle
T = 85°C, 1ms pulse, 10% duty
0.34
C
cycle
* MTTF - median time to failure for wear-out failure mode (30% I
Refer to product qualification report for FIT(random) failure rate.
degradation) which is determined by the technology process reliability.
DSS
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values.
Bias Conditions should also satisfy the following expression: P
< (T - T )/R
and T = T
DISS
J
C
TH J-C
C
CASE
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Recommended Operating Conditions
Drain Voltage (V
)
50
-2
V
V
DSQ
Gate Voltage (V
)
-8
-3
GSQ
Drain Bias Current
440
mA
Frequency of Operation
1200
1400
MHz
DC Functional Test
I
– Gate Leakage
– Drain Leakage
– Threshold Voltage
2
mA
mA
V
V
V
V
V
= -8V, V = 0V
D
G (OFF)
D (OFF)
G
G
D
G
I
2.5
= -8V, V = 50V
D
V
V
-3.5
= 50V, I = 40mA
D
GS (TH)
– Drain Voltage at High
0.28
V
= 0V, I = 1.5A
D
DS (ON)
Current
[1], [2]
f = 1200MHz, P = 30dBm
RF Functional Test
Small Signal Gain
Power Gain
14
-8
dB
dB
IN
12.3
f = 1200MHz, P = 41.7dBm
IN
Input Return Loss
Output Power
- 5.5
dB
f = 1200MHz, P = 41.7dBm
IN
54
48
dBm
%
f = 1200MHz, P = 41.7dBm
IN
Drain Efficiency
50
f = 1200MHz, P = 41.7dBm
IN
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
2 of 10
DS120508
RFHA1020
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
[1], [2]
RF Functional Test
(continued)
Small Signal Gain
15
dB
dB
f = 1300MHz, P = 30dBm
IN
Power Gain
12.3
f = 1300MHz, P = 41.7dBm
IN
Input Return Loss
Output Power
-10
-6
dB
f = 1300MHz, P = 41.7dBm
IN
54
48
dBm
%
f = 1300MHz, P = 41.7dBm
IN
Drain Efficiency
Small Signal Gain
Power Gain
55
14
f = 1300MHz, P = 41.7dBm
IN
dB
f = 1400MHz, P = 30dBm
IN
12.3
dB
f = 1400MHz, P = 41.7dBm
IN
Input Return Loss
Output Power
-8
-5.5
dB
f = 1400MHz, P = 41.7dBm
IN
54
48
dBm
%
f = 1400MHz, P = 41.7dBm
IN
Drain Efficiency
55
f = 1400MHz, P = 41.7dBm
IN
[1], [2]
RF Typical Performance
Frequency Range
1200
1400
MHz
dB
Small Signal Gain
15
13
P
P
= 30dBm
IN
Power Gain
dB
= 54.50dBm
OUT
Gain Variation with Temperature
-0.015
dB/°C
dBm
W
At peak output power
Peak output power
Peak output power
At peak output power
Output Power (P
)
54.50
280
55
SAT
Drain Efficiency
%
[1] Test Conditions: PW = 100s, DC = 10%, V
= 50V, I = 440mA, T = 25°C.
DQ
DSQ
[2] Performance in a standard tuned test fixture.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120508
3 of 10
RFHA1020
Typical Performance in Standard Fixed Tune Test Fixture
(T = 25°C, unless otherwise noted)
Efficiency versus Output Power (f = 1300MHz)
Gain versus Output Power (f = 1300MHz)
(Pulsed 10% duty cycle, 1mS, VD = 50V, IDQ = 440mA)
(Pulsed 10% duty cycle, 1mS, VD = 50V, IDQ= 440mA)
19
18
17
16
15
14
13
12
70
60
50
40
30
20
10
Eff 85°C
Eff -40°C
Eff 25°C
Gain 85°C
Gain -40°C
Gain 25°C
45
46
47
48
49
50
51
52
53
54
55
45
46
47
48
49
50
51
52
53
54
55
Output Power (dBm)
Output Power (dBm)
Input Return Loss versus Output Power (f = 1300MHz)
(Pulsed 10% duty cycle, 1mS, VD = 50V, IDQ = 440mA)
Small Signal Performance versus Frequency, POUT = 44dBm
(Pulsed 10% duty cycle, 100μS, VD = 50V, IDQ = 440mA)
-6
-8
19
-2
Fixed tuned test circuit
18
17
16
15
14
13
12
11
10
-4
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-6
-8
-10
-12
-14
-16
-18
-20
IRL 85°C
IRL -40°C
IRL 25°C
Gain
IRL
45
46
47
48
49
50
51
52
53
54
55
1200
1220
1240
1260
1280
1300
1320
1340
1360
1380
1400
Output Power (dBm)
Frequency (MHz)
Drain Efficiency versus Frequency, POUT = 54dBm
(Pulsed 10% duty cycle, 100μS, VD = 50V, IDQ = 440mA)
Gain/IRL versus Frequency, POUT = 54dBm
(Pulsed 10% duty cyꢀle, 100μS, VD = 50V, IDQ = 440mA)
18
-6
60
59
58
57
56
55
54
53
52
51
50
Fixed tuned test circuit
Fixed tuned test circuit
17
16
15
14
13
12
11
-8
-10
-12
-14
-16
-18
-20
Gain
IRL
Eff
1200
1220
1240
1260
1280
1300
1320
1340
1360
1380
1400
1200
1220
1240
1260
1280
1300
1320
1340
1360
1380
1400
Frequency (MHz)
Frequency (MHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
4 of 10
DS120508
RFHA1020
Gain/ Efficiency versus POUT , f = 1300MHz
(Pulsed 10% duty cycle, 100μS, VD = 50V, IDQ = 440mA)
POUT/DE versus Pulse Width, f = 1300MHz
(Pulsed 10% duty cycle, VD = 50V, IDQ = 440mA)
18
17
16
15
14
13
12
70
60
50
40
30
20
10
70
65
60
55
50
45
40
320
310
300
290
280
270
260
250
240
230
220
210
200
Gain
Drain Eff
Output Power
Drain Efficiency
45
46
47
48
49
50
51
52
53
54
55
10
100
1000
Output Power (dBm)
Pulse Width (usec)
POUT/DE versus Duty Cycle, f = 1300MHz
(Pulsed, 100μs pulse, VD = 50V, IDQ = 440mA)
70
65
60
55
50
45
350
325
300
275
250
225
200
Output Power
Drain Efficiency
40
10
20
30
40
50
60
Duty Cycle (%)
PulseꢀPowerꢀDissipationꢀDeꢁratingꢀCurve
(BasedꢀonꢀMaximumꢀpackageꢀtemperatureꢀandꢀRth)
1200
1000
800
600
400
200
0
1mSꢀPulseꢀWidth,ꢀ10%ꢀDutyꢀCycle
100ꢁSꢀPulseꢀWidth,ꢀ10%ꢀDutyꢀCycle
0
20
40
60
80
100
120
140
MaximumꢀCaseꢀTemperatureꢀ(°C)
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support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120508
5 of 10
RFHA1020
Package Drawing
(All dimensions in mm)
Pin Names and Descriptions
Pin
1
Name
VG
Description
Gate – VG RF Input
Drain – VD RF Output
Source – Ground Base
2
3
VD
GND
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support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
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DS120508
RFHA1020
Bias Instruction for RFHA1020 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.
Evaluation board requires additional external fan cooling.
Connect all supplies before powering up the evaluation board.
1. Connect RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -8V to VG.
4. Apply 50V to VD.
5. Increase VG until drain current reaches 440mA or desired bias point.
6. Turn on the RF input.
IMPORTANT NOTE: Depletion mode device; when biasing the device, VG must be applied before VD. When removing bias, VD
must be removed before VG is removed. Failure to follow this sequence will cause the device to fail.
NOTE: For optimal RF performance, consistent and optimal heat removal from the base of the package is required. A thin layer
of thermal grease should be applied to the interface between the base of the package and the equipment chassis. It is recom-
mended that a small amount of thermal grease is applied to the underside of the device package. Even application and
removal of excess thermal grease can be achieved by spreading the thermal grease using a razor blade. The package should
then be bolted to the chassis and input and output leads soldered to the circuit board.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120508
7 of 10
RFHA1020
Evaluation Board Schematic
VDRAIN
VGATE
C8
C7
+
+
C18
L21
L20
L23
L22
C14
R2
R1
R3
C6
C5
C4
C3
C2
C12
C13
C17
C15
C16
C19
R4
L1
L2
J2
RF OUT
50 strip
50 strip
C11
J1
C21
RFHA1020
RF IN
C1
C22
C20
Evaluation Board Bill of Materials
Component
Value
10
Manufacturer
Panasonic
Panasonic
Panasonic
Dialectric Labs
ATC
Part Number
ERJ-8GEYJ100V
ERJ-8GEY0R00
ERJ-8GEYJ510
800A820JT
R1, R4
R2
0
R3
51
C1, C2, C11, C13
C17
82pF
56pF
ATC800A560JT
ECJ-2VB1H104K
ECJ-2VB1H103K
ECJ-2VB1H104K
ECA-2AM100
C5
0.1F
Panasonic
Panasonic
Panasonic
Panasonic
ATC
C6, C15
C16
10000pF
0.1F
C8, C18
C20
10F
3.9pF
800A3R9CT
C21
1.1pF
ATC
800A1R1BT
C22
0.3pF
ATC
800A0R3BT
L20, L21
L22, L23
115, 10A
75, 10A
NOT POPULATED
Steward
28F0181-1SR-10
35F0121-1SR-10
Steward
C3, C4, C7, C12, C14, C19
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
8 of 10
DS120508
RFHA1020
Evaluation Board Layout
Device Impedances
Frequency
Z Source ()
10.7 - j5.0
Z Load (
1200MHz
1300MHz
1400MHz
33.9 - j10
34.2 - j10.9
34.5 - j12.33
9.48 - j3.24
8.2 - j1.2
Note: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency, peak
power, and linear performance across the entire frequency bandwidth.
EvaluationꢀBoard
Matching
EvaluationꢀBoard
Matching
Network
Network
ZSOURCE
ZLOAD
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support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120508
9 of 10
RFHA1020
Device Handling/Environmental Conditions
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or
evaluation boards.
GaN HEMT Capacitances
The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies.
These capacitances exist across all three terminals of the device. The physical manufactured characteristics of
the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These
capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances
measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement pro-
cess, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step.
Any internal matching is included in the terminal capacitance measurements. The capacitance values presented
in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse
(CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows:
CISS = CGD + CGS
COSS = CGD + CDS
CRSS = CGD
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of
the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken
to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care
not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS
.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain
current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recom-
mended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the
operational characteristics for this device, considering manufacturing variations and expected performance. The
user may choose alternate conditions for biasing this device based on performance tradeoffs.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal charac-
teristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of
the die. At the same time, the package temperature is measured using a thermocouple touching the backside of
the die embedded in the device heatsink but sized to prevent the measurement system from impacting the
results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated.
In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or
below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the
thermal resistance from ambient to the back of the package including heatsinking systems and air flow mecha-
nisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
10 of 10
DS120508
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