ECE-V1HA101UP [RFMD]
120W GaN WIDEBAND POWER AMPLIFIER; 120W的GaN宽带功率放大器
| 型号： | ECE-V1HA101UP |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 120W GaN WIDEBAND POWER AMPLIFIER |
| 文件： | 总14页 (文件大小：1658K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF3934
120W GaN WIDEBAND POWER AMPLIFIER
Package: Hermetic 2-Pin Flanged Ceramic
Features
RF IN
VG
Pin 1 (CUT)
RF OUT
VD
Pin 2
Broadband Operation DC to
3.5GHz
Advanced GaN HEMT
Technology
Advanced Heat-Sink
Technology
GND
BASE
Small Signal Gain = 13dB at
2GHz
48V Operation Typical
Performance
• Output Power 140W at P3dB
• Drain Efficiency 60% at P3dB
• -40°C to 85°C Operation
Functional Block Diagram
Product Description
The RF3934 is a 48V 120W high power discrete amplifier designed for commercial
wireless infrastructure, cellular and WiMAX infrastructure, industrial/scien-
tific/medical and general purpose broadband amplifier applications. Using an
advanced high power density Gallium Nitride (GaN) semiconductor process, these
high-performance amplifiers achieve high efficiency and flat gain over a broad fre-
quency range in a single amplifier design. The RF3934 is an unmatched GaN tran-
sistor packaged in a hermetic, flanged ceramic package. This package provides
excellent thermal stability through the use of advanced heat sink and power dissi-
pation technologies. Ease of integration is accomplished through the incorporation
of simple, optimized matching networks external to the package that provide wide-
band gain and power performance in a single amplifier.
Applications
Commercial Wireless
Infrastructure
Cellular and WiMAX
Infrastructure
Civilian and Military Radar
General Purpose Broadband
Amplifiers
Public Mobile Radios
Industrial, Scientific, and
Medical
Ordering Information
RF3934S2
2-piece sample bag
RF3934SB
5-piece bag
RF3934SQ
RF3934SR
RF3934TR7
RF3934PCK-411
25-piece bag
100 pieces on 7” short reel
750 pieces on 7” reel
Fully assembled evaluation board optimized for
2.14GHz; 48V
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120306
1 of 14
RF3934
Absolute Maximum Ratings
Parameter
Caution! ESD sensitive device.
Rating
150
Unit
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Drain Voltage (V )
D
Gate Voltage (V )
-8 to +2
78
V
G
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Gate Current (I )
mA
V
G
Operational Voltage
65
Ruggedness (VSWR)
10:1
Storage Temperature Range
-55 to +125
-40 to +85
°C
°C
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Operating Temperature Range (T )
C
Operating Junction Temperature (T )
200
°C
J
Human Body Model
Class 1A
6
MTTF (T < 200°C, 95% Confidence Limits)*
Hours
°C/W
J
3 x 10
Thermal Resistances, R (junction to case)
1.6
TH
measured at T =85°C, DC bias only
C
*MTTF - median time to failure for wear-out failure mode (30% I
DSS
degradation) which is determined by the technology process reliability. Refer
to product qualification report for FIT (random) failure rate.
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device voltage and
current must not exceed the maximum operating values specified in the table
below.
Bias Conditions should also satisfy the following expression:
P
< (T - T ) / R J-C and T = T
DISS
J C TH C CASE
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Recommended Operating Conditions
Drain Voltage (V
)
28
48
V
V
DSQ
Gate Voltage (V
)
-4.5
-3.7
440
-2.5
GSQ
Drain Bias Current
mA
Frequency of Operation
DC
3500
MHz
Capacitance
C
C
C
9
pF
pF
pF
V = - 8V, V = OV
G D
RSS
40
V = - 8V, V = OV
G D
ISS
27.5
V = - 8V, V = OV
OSS
G
D
DC Functional Test
I
- Gate Leakage
2
mA
mA
V
V
V
V
= - 8V, Vd = OV
G (OFF)
D (OFF)
G
G
D
I
- Drain Leakage
- Threshold Voltage
2.5
= - 8V, Vd = 48V
V
V
-4.2
= 48V, I = 20mA
D
GS (TH)
DS (ON)
- Drain Voltage at high current
0.25
V
V = OV, I = 1.5A
G D
RF Functional Test
V
-3.4
12
V
V = 48V, I = 440mA
D D
GSQ
Gain
10
55
dB
%
CW, P
= 50.8dBm, f = 2140MHz
OUT
60
CW, P = 50.8dBm, f = 2140MHz
OUt
Drain Efficiency
Input Return Loss
-12
dB
CW, P
= 50.8dBm, f = 2140MHz
OUT
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
2 of 14
DS120306
RF3934
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
[1], [2]
RF Typical Performance
Small Signal Gain
21
13
dB
dB
CW, f = 900MHz
CW, f = 2140MHz
CW, f = 900MHz
CW, f = 2140MHz
CW, f = 900MHz
CW, f = 2140MHz
Small Signal Gain
Output Power at P3dB
Output Power at P3dB
Drain Efficiency at P3dB
Drain Efficiency at P3dB
[1] Test Conditions: CW operation, V
51.60
51.46
75
dBm
dBm
%
60
%
= 48V, I = 440mA, T = 25ºC
DSQ
DQ
[2] Performance in a standard tuned test fixture.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120306
3 of 14
RF3934
Typical Performance in Standard 2.14GHz Tuned Test Fixture
(CW, T = 25°C, unless otherwise noted)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
4 of 14
DS120306
RF3934
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120306
5 of 14
RF3934
Typical Performance in Standard 900MHz Tuned Test Fixture
(CW, T = 25°C, unless otherwise noted)
Gain/ Eꢀciency vs. Pout, f = 900MHz
(Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 440mA)
26
24
22
20
18
16
14
12
10
80
70
60
50
40
30
20
10
0
Gain
Drain ꢀꢁ
40
42
44
46
48
50
52
Pout, Output Power (dBm)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
6 of 14
DS120306
RF3934
Gainꢁvs.ꢁPout
IMDꢁvs.ꢁOutputꢁPowerꢁ
(2ꢂToneꢁ1MHzꢁSeperation,ꢁVdꢁ=ꢁ48V,ꢁIdqꢁvaried,ꢁfcꢁ=ꢁ900MHz)
(Vdꢁ=ꢁ48V,ꢁIdqꢁ=ꢁ440mA,ꢁf1ꢁ=ꢁ899.5MHz,ꢁf2ꢁ=ꢁ900.5MHz)
24
23
22
21
20
19
0
ꢂ5
ꢂIMD3
ꢂIMD5
ꢂIMD7
IMD3
IMD5
IMD7
ꢂ10
ꢂ15
ꢂ20
ꢂ25
ꢂ30
ꢂ35
ꢂ40
ꢂ45
ꢂ50
220mA
330mA
440mA
550mA
660mA
1
10
100
1000
1
10
Pout,ꢁOutputꢁPowerꢁ(Wꢂ PEP)
100
Pout,ꢁOutputꢁPowerꢁ(WꢂPEP)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120306
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RF3934
Package Drawing
Package Style: Flanged Ceramic
Pin
Function
Description
1
2
3
Gate
Drain
Source
Gate - VG input
Drain - VD RF Output
Source - Ground Base
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support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
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DS120306
RF3934
Bias Instruction for RF3934 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.
Evaluation board requires additional external fan cooling.
Connect all supplies before powering evaluation board.
1. Connect RF cables at RF and RF
.
IN
OUT
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal.
3. Apply -8V to V .
G
4. Apply 48V to V .
D
5. Increase V until drain current reaches 440mA or desired bias point.
G
6. Turn on the RF input.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120306
9 of 14
RF3934
2.14GHz Evaluation Board Schematic
ꢈ
ꢉꢊꢋꢌ
ꢈꢍꢀꢊꢎꢏ
ꢅꢄ
ꢅꢂ
ꢅꢇ
ꢅꢇꢑ
ꢅꢇꢇ
ꢅꢇꢄ
ꢅꢇꢂ
ꢑꢒꢓ
ꢅꢇꢐ
ꢅꢑ
ꢀꢇ
ꢅꢇꢒ
ꢔꢕꢖꢗꢘ
ꢅꢇꢆ
ꢅꢆ
ꢙꢐ
ꢀꢁꢓꢚꢛꢋ
ꢑꢒꢓ
ꢔꢕꢖꢗꢘ
ꢙꢇ
ꢀꢁꢓꢎꢏ
ꢀꢁꢂꢃꢂꢄ
ꢅꢝ
ꢅꢃ
ꢅꢐ
ꢅꢜ
2.14GHz Evaluation Board Bill of Materials
Component
C1
Value
10pF
Manufacturer
ATC
Part Number
ATC800A100JT
ATC800A330JT
C2, C10, C11, C15
33pF
ATC
C3,C14
0.1F
4.7F
100F
2.0pF
0.3pF
1.5pF
2.7pF
100F
1.8pF
10
Murata
Murata
Panasonic
ATC
GRM32NR72A104KA01L
GRM55ER72A475KA01L
ECE-V1HA101UP
ATC800A2R0BT
ATC800A0R3BT
ATC800A1R5BT
ATC800A2R7BT
EEV-TG2A101M
ATC800A1R8BT
ERJ-8GEYJ100V
-
C4,C13
C5
C6
C7
ATC
C8
ATC
C9
C12
ATC
Panasonic
ATC
C17
R1
Panasonic
-
C16, C18, C19
PCB
Not used
RO4350, 0.030" thick
dielectric
Rogers
-
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
10 of 14
DS120306
RF3934
2.14GHz Evaluation Board Layout
Device Impedances
Frequency
2110MHz
2140MHz
2170MHz
Z Source ()
1.58 - j2.56
1.49 - j2.25
1.42 - j1.96
Z Load (
3.5 - j0.08
3.46 + j0.38
3.43 + j0.85
Note: Device impedances reported are the measured evaluation board impedances chosen for a trade off of efficiency, peak power, and linearity
performance across the entire frequency bandwidth.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120306
11 of 14
RF3934
900MHz Evaluation Board Schematic
VGATE
VDRAI N
+
+ C5
C4
C3
C1
C11
C14
C13
C12
R1
J2
50 strip
RF OUT
J1
RF IN
50 strip
RF3934
C10
C8 C9
C2
C6
C7
C15
900MHz Evaluation Board Bill of Materials
Component
Value
68pF
Manufacturer
ATC
Part Number
C1, C2, C10, C11
ATC800A680JT
C3,C14
C4,C13
C15
C6
0.1F
Murata
GRM32NR72A104KA01L
GRM55ER72A475KA01L
4.7F
Murata
NOT POPULATED
15pF
ATC
ATC
ATC800A150JT
ATC800A220JT
ATC800A120JT
ATC800A2R2BT
EEU-FC2A331
C7
22pF
C8
12pF
ATC
C9
2.2pF
ATC
C12
C5
330F
100F
10
Panasonic
Panasonic
Panasonic
ECE-V1HA101UP
ERJ-8GEYJ100V
R1
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
12 of 14
DS120306
RF3934
900MHz Evaluation Board Layout
Device Impedances
Frequency
880MHz
900MHz
920MHz
Z Source()
1.24 + j3.0
Z Load (
5.49 + j3.4
5.27 + j3.9
5.03 + j4.40
1.14 + j3.63
1.11 + j4.20
Note: Device impedances reported are the measured evaluation board impedances chosen for a trade off of efficiency, peak power, and linearity
performance across the entire frequency bandwidth.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120306
13 of 14
RF3934
Device Handling/Environmental Conditions
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or
evaluation boards.
GaN HEMT Capacitances
The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies.
These capacitances exist across all three terminals of the device. The physical manufactured characteristics of
the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These
capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances
measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement pro-
cess, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step.
Any internal matching is included in the terminal capacitance measurements. The capacitance values presented
in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse
(CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows:
CISS = CGD + CGS
COSS = CGD + CDS
CRSS = CGD
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of
the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken
to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care
not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS
.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain
current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recom-
mended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the
operational characteristics for this device, considering manufacturing variations and expected performance.
The user may choose alternate conditions for biasing this device based on performance trade-offs.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal charac-
teristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of
the die. At the same time, the package temperature is measured using a thermocouple touching the backside of
the die embedded in the device heatsink but sized to prevent the measurement system from impacting the
results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
14 of 14
DS120306
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