RF5111_1 [RFMD]
3V DCS POWER AMPLIFIER; 3V DCS功率放大器
| 型号： | RF5111_1 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 3V DCS POWER AMPLIFIER |
| 文件： | 总14页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF5111
3V DCS POWER AMPLIFIER
RoHS Compliant & Pb-Free Product
Package Style: QFN, 16-Pin, 3 x 3
Features
Single 2.7V to 4.8V Supply Volt-
16
15
14
13
age
VAT EN
RF IN
1
2
3
4
12 RF OUT
11 RF OUT
10 RF OUT
+33dBm Output Power at 3.5V
27dB Gain with Analog Gain Con-
trol
GND1
VCC1
50% Efficiency
1700MHz to 1950MHz Opera-
tion
9
NC
5
6
7
8
Supports DCS1800 and
PCS1900
Applications
3V DCS1800 (PCN) Cellular
Handsets
Functional Block Diagram
Product Description
3V DCS1900 (PCS) Cellular
Handsets
The RF5111 is a high-power, high-efficiency power amplifier module offering high
performance in GSM or GPRS applications. The device is manufactured on an
advanced GaAs HBT process, and has been designed for use as the final RF ampli-
fier in DCS1800/1900 handheld digital cellular equipment and other applications
in the 1700MHz to 2000MHz band. On-board power control provides over 65dB of
control range with an analog voltage input, and provides power down with a logic
“low” for standby operation. The device is self-contained with 50Ω input and the
output can be easily matched to obtain optimum power and efficiency characteris-
tics. The RF5111 can be used together with the RF5110 for dual-band operation.
The device is packaged in an ultra-small plastic package, minimizing the required
board space.
3V Dual-Band/Triple-Band Hand-
sets
Commercial and Consumer Sys-
tems
Portable Battery-Powered Equip-
ment
GPRS Compatible
Ordering Information
RF5111
3V DCS Power Amplifier
RF5111PCBA-41X Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
9
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A1 DS060921
1 of 14
RF5111
Absolute Maximum Ratings
Caution! ESD sensitive device.
Parameter
Rating
Unit
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Supply Voltage
-0.5 to +6.0
-0.5 to +3.0
-0.5 to +3.0
V
DC
Power Control Voltage (V
)
V
APC
Enable Voltage (V
)
V
AT_EN
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
DC Supply Current
Input RF Power
1500
+13
mA
dBm
%
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Duty Cycle at Max Power
Output Load VSWR
50
10:1
Operating Case Temperature
Storage Temperature
-40 to +85
-55 to +150
°C
°C
Specification
Parameter
Unit
Condition
Min.
Typ.
Max.
Temp=25 °C, V =3.6V, V
=2.8V,
CC
APC1,2
V
=0V, P =+5.5dBm,
IN
AT_EN
Overall
Freq=1710MHz to 1910MHz,
37.5% Duty Cycle, pulse width=1731μs
See application schematic for tuning details.
A different tuning is required.
Operating Frequency Range
1710 to 1785
1850 to 1910
1700 to 2000
+33
MHz
MHz
MHz
dBm
Usable Frequency Range
Maximum Output Power
+32.3
+32
Temp=+25°C, V =3.6V, V
=2.8V
=2.8V
=2.8V
CC
APC1,2
APC1,2
APC1,2
+32.8
+32.5
49
dBm
dBm
%
Temp=+25°C, V =3.3V, V
CC
+30.4
43
Temp=+60°C, V =3.3V, V
CC
Total Efficiency
At P
, V =3.6V
OUT,MAX CC
15
%
P
P
=+20dBm
=+10dBm
OUT
OUT
10
%
Recommended Input Power Range
Output Noise Power
+5.5
+8.0
+10.0
-79
dBm
dBm
RBW=100kHz, 1805MHz to 1880MHz and
1930MHz to 1990MHz,
P
<P
<P
,
OUT,MIN
OUT
OUT,MAX
P
<P <P , V =3.0V to 5.0V
IN,MAX CC
IN,MIN
IN
Forward Isolation
Second Harmonic
Third Harmonic
-37
-20
-20
-25
-7
dBm
dBm
dBm
V
=0.3V, P =+10dBm
APC1,2 IN
P
<+32.3dBm; P =+10dBm
IN
OUT
-7
P
=+10dBm
IN
All Other Non-Harmonic Spurious
Input Impedance
-36
dBm
50
Ω
Input VSWR
2.5:1
3:1
P
P
-5dB<P
<P
OUT OUT,MAX
OUT,MAX
<P
-5dB
OUT,MAX
OUT
Output Load VSWR
Stability
8:1
Spurious<-36dBm, V =0.3V to 2.6V,
APC1,2
RBW=100kHz
Ruggedness
10:1
No damage
Output Load Impedance
4.5-j3.9
Ω
Load Impedance presented at RF OUT pin
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
2 of 14
Rev A1 DS060921
RF5111
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Power Control
Power Control “ON”
Power Control “OFF”
Power Control Range
3.0
V
V
Maximum P
, Voltage supplied to the input
OUT
0.3
62
0.5
68
Minimum P
, Voltage supplied to the input
OUT
dB
V
=0.3V to 2.8V, V
=2.7V,
AT_EN
APC1,2
P
=+8dBm
IN
Gain Control Slope
100
4.5
dB/V
P
=-10dBm to +33dBm
OUT
APC Input Capacitance
APC Input Current
10
5
pF
DC to 2MHz
mA
V
=2.8V
=0V
APC1,2
10
μA
V
APC1,2
Turn On/Off Time
Power Supply
100
ns
Power Supply Voltage
3.5
1.3
V
V
Specifications
2.7
5
4.8
5.5
Nominal operating limits, P
<+33dBm
OUT
V
With maximum output load VSWR 6:1,
<+33dBm
P
OUT
Power Supply Current
A
DC Current at P
OUT,MAX
295
10
mA
μA
μA
Idle Current, P <-30dBm, V
=2.6V
IN
APC
1
1
P
P
<-30dBm, V
=0.2V
IN
IN
APC1,2
APC1,2
10
<-30dBm, V
=0.2V, Temp=+85°C
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A1 DS060921
3 of 14
RF5111
Pin
1
Function
VAT EN
Description
Interface Schematic
Control pin for the pin diode. The purpose of the pin diode is to attenuate
RF drive level when V
is low. This serves to reduce RF leakage through
APC
the device caused by self-biasing under high RF drive levels. A good input
match is maintained when the input stage bias is turned off by the same
mechanism. When this pin is set high, pin diode attenuation control is
turned on. (See Theory of Operation for details.)
RF Input. This is a 50Ω input, but the actual impedance depends on the
interstage matching network connected to pin 5. An external DC blocking
capacitor is required if this port is connected to a DC path to ground or a
DC voltage.
2
RF IN
VCC1
RF IN
PIN
GND
1
From Attn
From Bias
control circuit Stages
Ground connection for the preamplifier stage. For best performance, keep See pin 2.
traces physically short and connect immediately to the ground plane. It is
important for stability that this pin has it’s own vias to the groundplane, to
minimize any common inductance.
3
4
5
GND1
VCC1
APC1
Power supply for the preamplifier stage and interstage matching. This pin See pin 2.
forms the shunt inductance needed for proper tuning of the interstage
match. Refer to the application schematic for proper configuration, and
note that position and value of the components are important.
Power Control for the driver stage and preamplifier. When this pin is “low”,
APC VCC
all circuits are shut off. A “low” is typically 0.5V or less at room tempera-
ture. A shunt bypass capacitor is required. During normal operation this pin
is the power control. Control range varies from approximately 1.0V for -
10dBm to 2.6V for +33dBm RF output power. The maximum power achiev-
able depends on the actual output matching; see the application informa-
tion for more details. The maximum current into this pin is 5mA when
To RF
Stages
V
=2.6V, and 0mA when V
=0V.
APC1
APC
GND
GND
Power control for the output stage. See pin 6 for more details.
Power supply for the bias circuits.
Not connected.
See pin 6.
See pin 6.
6
7
8
APC2
VCC
NC
Not connected.
9
NC
RF output and power supply for the output stage. Bias voltage for the final
stage is provided through this wide output pin. An external matching net-
work is required to provide the optimum load impedance.
10
RF OUT
RF OUT
GND
From Bias
Stages
PCKG BASE
Same as pin 10.
Same as pin 10.
Same as pin 10.
Same as pin 10.
11
12
13
RF OUT
RF OUT
2F0
Connection for the second harmonic trap. This pin is internally connected Same as pin 10.
to the RF OUT pins. The bonding wire together with an external capacitor
form a series resonator that should be tuned to the second harmonic fre-
quency in order to increase efficiency and reduce spurious outputs.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
4 of 14
Rev A1 DS060921
RF5111
Pin
14
Function
VCC2
Description
Interface Schematic
Power supply for the driver stage. This pin forms the shunt inductance
needed for proper tuning of the second interstage match.
VCC2
From Bias
Stages
GND2
Same as pin 14.
Same as pin 14.
Same as pin 14.
Same as pin 14.
15
16
Pkg
Base
VCC2
VCC2
GND
Ground connection for the output stage. This pad should be connected to
the groundplane by vias directly under the device. A short path is required
to obtain optimum performance, as well as to provide a good thermal path
to the PCB for maximum heat dissipation.
Package Drawing
0.15 C
2 PLCS
A
0.05 C
-A-
1.00
0.85
3.00 SQ.
0.05
0.01
1.50 TYP
0.80
0.65
2 PLCS
0.15 C B
12°
MAX
2 PLCS
0.15 C B
-B-
1.37 TYP
SEATING
PLANE
-C-
Dimensions in mm.
2.75 SQ.
2 PLCS
0.15 C
A
B
C A
0.10
M
0.60
0.24
TYP
0.30
0.18
Shaded lead is pin 1.
0.45
0.00
4 PLCS
1.65
1.35
SQ.
0.23
0.13
4 PLCS
0.55
0.30
0.50
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A1 DS060921
5 of 14
RF5111
Theory of Operation and Application Information
The RF5111 is a three-stage device with 28 dB gain at full power. Therefore, the drive required to fully saturate the output is
+5dBm. Based upon HBT (Heterojunction Bipolar Transistor) technology, the part requires only a single positive 3V supply to
operate to full specification. Power control is provided through a single pin interface, with a separate Power Down control pin.
The final stage ground is achieved through the large pad in the middle of the backside of the package. First and second stage
grounds are brought out through separate ground pins for isolation from the output. These grounds should be connected
directly with vias to the PCB ground plane, and not connected with the output ground to form a so called “local ground plane”
on the top layer of the PCB. The output is brought out through the wide output pad, and forms the RF output signal path.
The amplifier operates in near Class C bias mode. The final stage is “deep AB”, meaning the quiescent current is very low. As
the RF drive is increased, the final stage self-biases, causing the bias point to shift up and, at full power, draws about 1500mA.
The optimum load for the output stage is approximately 4.5Ω. This is the load at the output collector, and is created by the
series inductance formed by the output bond wires, vias, and microstrip, and 2 shunt capacitors external to the part. The opti-
mum load impedance at the RF Output pad is 4.5-j3.9Ω. With this match, a 50Ω terminal impedance is achieved. The input is
internally matched to 50Ω with just a blocking capacitor needed. This data sheet defines the configuration for GSM operation.
The input is DC coupled; thus, a blocking cap must be inserted in series. Also, the first stage bias may be adjusted by a resis-
tive divider with high value resistors on this pin to VPC and ground. For nominal operation, however, no external adjustment is
necessary as internal resistors set the bias point optimally.
When the device is driven at maximum input power self biasing would occur. This results in less isolation than one would
expect, and the maximum output power would be about -15dBm. If the drive power to the PA is turned on before the GSM
ramp-up, higher isolation is required. In order to meet the GSM system specs under those conditions, a PIN diode attenuator
connected to the input can be turned on. The figure below shows how the attenuator and its controls are connected.
VCC
RF IN
PIN
From Bia
750 Ω
5 kΩ
500 Ω
Stages
APC
2 kΩ
AT_EN
The current through the PIN diode is controlled by two signals: AT_EN and APC. The AT_EN signal allows current through the PIN
diode and is an on/off function. The APC signal controls the amount of current through the PIN diode. Normally, the AT_EN sig-
nal will be derived from the VCO ENABLE signal available in most GSM handset designs. If maximum isolation is needed before
the ramp-up, the AT_EN signal needs to be turned on before the RF power is applied to the device input. The current into this
pin is not critical, and can be reduced to a few hundred micro amps with an external series resistor. Without the resistor, the
pin will draw about 700μA.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
6 of 14
Rev A1 DS060921
RF5111
Because of the inverting stage at the APC input, the current through the PIN diode is inverted from the APC voltage. Thus, when
VAPC is high for maximum output power, the attenuator is turned off to obtain maximum drive level for the first RF stage. When
VAPC is low for maximum isolation, the attenuator is be turned on to reduce the drive level and to avoid self-biasing.
The PIN diode is dimensioned such that a low VAPC the impedance of the diode is about 50 Ohm. Since the input impedance
of the first RF stage become very high when the bias is turned off, this topology will maintain a good input impedance over the
entire VAPC control range.
VCC1 and VCC2 provide supply voltage to the first and second stage, as well as provides some frequency selectivity to tune to
the operating band. Essentially, the bias is fed to this pin through a short microstrip. A bypass capacitor sets the inductance
seen by the part, so placement of the bypass cap can affect the frequency of the gain peak. This supply should be bypassed
individually with 100pF capacitors before being combined with VCC for the output stage to prevent feedback and oscillations.
The RF OUT pin provides the output power. Bias for the final stage is fed to this output line, and the feed must be capable of
supporting the approximately 1.5A of current required. Care should be taken to keep the losses low in the bias feed and output
components. A narrow microstrip line is recommended because DC losses in a bias choke will degrade efficiency and power.
While the part is safe under CW operation, maximum power and reliability will be achieved under pulsed conditions. The data
shown in this data sheet is based on a 12.5% duty cycle and a 600μs pulse, unless specified otherwise.
The part will operate over a 3.0V to 5.0V range. Under nominal conditions, the power at 3.5V will be greater than +32dBm at
+85°C. As the voltage is increased, however, the output power will increase. Thus, in a system design, the ALC (Automatic
Level Control) Loop will back down the power to the desired level. This must occur during operation, or the device may be dam-
aged from too much power dissipation. At 5.0V, over +36dBm may be produced; however, this level of power is not recom-
mended, and can cause damage to the device.
The HBT breakdown voltage is >20V, so there is no issue with overvoltage. However, under worst-case conditions, with the RF
drive at full power during transmit, and the output VSWR extremely high, a low load impedance at the collector of the output
transistors can cause currents much higher than normal. Due to the bipolar nature of the devices, there is no limitation on the
amount of current the device will sink, and the safe current densities could be exceeded.
High current conditions are potentially dangerous to any RF device. High currents lead to high channel temperatures and may
force early failures. The RF5111 includes temperature compensation circuits in the bias network to stabilize the RF transistors,
thus limiting the current through the amplifier and protecting the devices from damage. The same mechanism works to com-
pensate the currents due to ambient temperature variations.
To avoid excessively high currents it is important to control the VAPC when operating at supply voltages higher than 4.0V, such
that the maximum output power is not exceeded.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A1 DS060921
7 of 14
RF5111
Application Schematic
Instead of a stripline,
an inductor of ~6 nH
can be used
VCC
12 pF
Very close to
VCC
1 nF
pin 15/16
15 pF
Instead of a stripline, an
inductor of 2.2 nH can
be used
1.0 pF
16
15
14
13
12
Quarter wave
length
1
2
3
4
33 pF
15 pF
33 pF
50 Ω μstrip
RF IN
11
10
RF OUT
5.1 pF
Note 1
1.0 pF
Note 1
VCC
9
Distance between
edge of device and
capacitor is 0.080"
Distance center to
center of capacitors
0.220"
5
6
7
8
Distance between edge of
device and capacitor is
0.240" to improve the "off"
isolation
VCC
15 pF
15 pF
15 pF
Notes:
1. Using a hi-Q capacitor will increase efficiency slightly.
2. All capacitors are standard 0402 multi layer chip.
APC
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
8 of 14
Rev A1 DS060921
RF5111
Internal Schematic
VCC1
VCC2
RF OUT
APC1
VCC
APC2
VCC
RF IN
VCC
500 Ω
200 Ω
750 Ω
500 Ω
320 Ω
2.5k Ω
5k Ω
3k Ω
APC1
AT_EN
2.5k Ω
1.5k Ω
1.5k Ω
GND1
PKG BASE
PKG BASE
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A1 DS060921
9 of 14
RF5111
Evaluation Board Schematic
Dual-Band DCS/PCS Lumped Element
VCC
P1
1
C21
C22
P1-1
P1-2
P1-3
VAT EN
VCC
3.3 uF
1 nF
2
3
4
VCC
C23
33 pF
C16
3.3 uF
GND
C20
1 nF
GND
5
L5
C15
1 nF
10 Ω Ferrite
CON5
VAT EN
C18
1 pF
C19
12 pF
C25
1 nF
C24
1 nF
16
15
14
13
C17
33 pF
1
2
3
4
12
11
10
9
50 Ω μstrip
J1
L3
8.8 nH
L4
1.2 nH
C14
33 pF
RF IN
C1
47 pF
50 Ω μstrip
J2
RF OUT
L2
1.2 nH
C10
5.1 pF
C11
2.2 pF
C12
2.4 pF
VCC
100 mils
C2
1 nF
C3
1 nF
C3A
10 nF
C4
27 pF
5
6
7
8
C9
10 nF
C7
1 nF
C6
1 nF
C8
33 pF
50 Ω μstrip
VCC
J3
APC
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
10 of 14
Rev A1 DS060921
RF5111
Evaluation Board Layout
Board Size 2.0” x 2.0”
Board Thickness 0.032”, Board Material FR-4, Multi-Layer
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A1 DS060921
11 of 14
RF5111
Typical Test Setup
Power Supply
V- S- S+ V+
RF Generator
Spectrum
Analyzer
3dB
10dB/5W
Buffer
x1 OpAmp
Pulse
Generator
A buffer amplifier is recommended because the current into the
APC changes with voltage. As an alternative, the voltage may be
monitored with an oscilloscope.
V
Notes about testing the RF5111
The test setup shown above includes two attenuators. The 3dB pad at the input is to minimize the effects that the switching of
the input impedance of the PA has on the signal generator. When VAPC is switched quickly, the resulting input impedance
change can cause the signal generator to vary its output signal, either in output level or in frequency. Instead of an attenuator
an isolator may also be used. The attenuator at the output is to prevent damage to the spectrum analyzer, and should be able
to handle the power.
It is important not to exceed the rated supply current and output power. When testing the device at higher than nominal supply
voltage, the VAPC should be adjusted to avoid the output power exceeding +36dBm. During load-pull testing at the output it is
important to monitor the forward power through a directional coupler. The forward power should not exceed +36dBm, and
VAPC needs to be adjusted accordingly. This simulates the behavior for the power control loop in this respect. To avoid damage,
it is recommended to set the power supply to limiting the current during the burst, not to exceed the maximum current rating.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
12 of 14
Rev A1 DS060921
RF5111
PCB Design Requirements
PCB Surface Finish
The PCB surface finish used for RFMD’s qualification process is electroless nickel, immersion gold. Typical thickness is 3μinch
to 8μinch gold over 180μinch nickel.
PCB Land Pattern Recommendation
PCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been developed and tested
for optimized assembly at RFMD; however, it may require some modifications to address company specific assembly pro-
cesses. The PCB land pattern has been developed to accommodate lead and package tolerances.
PCB Metal Land Pattern
A = 0.64 x 0.28 (mm) Typ.
B = 0.28 x 0.64 (mm) Typ.
C = 1.50 (mm) Sq.
Dimensions in mm.
1.50 Typ.
0.50 Typ.
Pin 16
B
B
B
B
Pin 1
Pin 12
A
A
A
A
A
A
A
A
0.50 Typ.
0.55 Typ.
0.75 Typ.
1.50
Typ.
C
B
B
B
B
Pin 8
0.55 Typ.
0.75 Typ.
Figure 1. PCB Metal Land Pattern (Top View)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A1 DS060921
13 of 14
RF5111
PCB Solder Mask Pattern
Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB
metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The
center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be
provided in the master data or requested from the PCB fabrication supplier.
A = 0.74 x 0.38 (mm) Typ.
B = 0.38 x 0.74 (mm) Typ.
C = 1.60 (mm) Sq.
Dimensions in mm.
1.50 Typ.
0.50 Typ.
Pin 16
B
B
B
B
Pin 1
Pin 12
A
A
A
A
A
A
A
A
0.50 Typ.
0.55 Typ.
0.75 Typ.
1.50
Typ.
C
B
B
B
B
Pin 8
0.55 Typ.
0.75 Typ.
Figure 2. PCB Solder Mask Pattern (Top View)
Thermal Pad and Via Design
The PCB land pattern has been designed with a thermal pad that matches the die paddle size on the bottom of the device.
Thermal vias are required in the PCB layout to effectively conduct heat away from the package. The via pattern has been
designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing
strategies.
The via pattern used for the RFMD qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size on a
0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. If micro vias are used in a design, it is suggested that the
quantity of vias be increased by a 4:1 ratio to achieve similar results.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
14 of 14
Rev A1 DS060921
相关型号：
©2020 ICPDF网 联系我们和版权申明