RF5601 [RFMD]
4.9GHz to 5.85GHz Low Noise Amplifier with Bypass;
| 型号： | RF5601 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 4.9GHz to 5.85GHz Low Noise Amplifier with Bypass 射频 微波 |
| 文件： | 总9页 (文件大小：361K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF5601
RF5601
4.9GHz to 5.85GHz
Low Noise Amplifier with Bypass
Package: QFN, 8-pin,
2.2mm x 2.2mm x 0.5mm
The RF5601 is a high performance Low Noise Amplifier designed
for 802.11a/n/ac applications and other portable consumer
electronics. The small form factor and high level of integration
(input and output match, internal DC blocking capacitors) reduces
the number of external components keeping cost down and
minimizing layout area for implementation. The RF5601 is
featured in a 2.2mm x 2.2mm x 0.5mm 8-pin QFN package.
Features
■
■
■
■
Single Supply Voltage 2.3V to 4.8V
1.8 dB Noise Figure
12 dB Typical Gain
5dB IL in Bypass Mode
Applications
■
■
■
■
■
802.11a/n/ac WiFi Applications
Consumer Electronics
Mobile Devices
8
7
Gaming
General Purpose 5GHz LNA
RF IN
1
2
6
5
N/C
LNA_EN
RF OUT
3
4
Functional Block Diagram
Ordering Information
RF5601
Standard 25 piece bag
RF5601SR
RF5601TR7
RF5601PCK-410
Standard 100 piece reel
Standard 2500 piece reel
Fully populated evaluation board w/ 5 piece bag
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131029
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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RF5601
Absolute Maximum Ratings
Caution! ESD sensitive device.
Parameter
Rating
5.5
Unit
V
DC Supply Voltage
RF Input Power
+5*
dBm
°C
RFMD Green: RoHS status based on EU
Directive 2011/65/EU (at time of this
document revision), halogen free per IEC
61249-2-21, < 1000ppm each of antimony
trioxide in polymeric materials and red
phosphorus as a flame retardant, and
<2% antimony in solder.
Operating Ambient Temperature
Storage Temperature
-40 to +85
-40 to +150
MSL2
°C
Moisture Sensitivity
*Note: Maximum input power with a 50Ω load in High Gain mode.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Nominal Operating Parameters
Specification
Parameter
Unit
Condition
Min Typ Max
Temp = 25°C, VDD = 3.3V, LNA_EN = 3.3V, BYP_EN = 3.3V in high
gain mode, BYP_EN = 0V in Bypass mode,
Typical Conditions
Frequency = 4.9 GHz to 5.85 GHz unless otherwise noted
Frequency
4.9
2.3
5.85
4.8
GHz
V
DC Voltage Supply (VDD
)
3.3
3.3
LNA_EN Low
0.2
V
LNA OFF. See logic table for additional control settings.
LNA_EN High
2.3
1.8
VDD
V
LNA ON. BYP_EN control must be high simultaneously for High Gain Mode.
See control table.
BYP_EN Low
BYP_EN High
LNA Current
0.2
V
V
Bypass mode ON. See logic table for more details.
Bypass mode OFF. See logic table for more details.
3.3
12
VDD
LNA IDD
17
µA
LNA in “On” state, over full DC supply range, LNA_EN supply range and over
normal operating temperature range (-20°C to 75°C)
3
2
5
µA
µA
LNA in “Off” state, VDD = 0V; LNA_EN = 0V, BYP_EN = 0V
LNA Enable
Gain
10
VDD = 2.3V to 4.8V, LNA_EN = 2.3V to 4.8V, over full frequency range, and over
normal operating temperatures - 20°C to +75°C
High Gain Mode
Noise Figure
9
12
1.8
5.0
15
dB
dB
Over full VDD and LNA_EN ranges, over frequency and over full temperature
range from -40°C to +85°C
Hi Gain Mode
Insertion Loss
2.6
Over full VDD, LNA_EN, and BYP_EN voltages, over frequency and normal
operating temperatures (-20°C to +75°C)
Bypass Mode
7.0
dB
dB
Passband Ripple
-1.0
9.6
+1.0
LNA is in High Gain mode, over full frequency range, over full VDD and LNA_EN
voltage range
Input IP3
+9
dBm
dB
High Gain mode
RF Port Return Loss
15.0
Input and output. No external matching.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131029
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RF5601
Specification
Parameter
Unit
Condition
Min Typ Max
Temp = 25°C, VDD = 3.3V, LNA_EN = 3.3V, BYP_EN = 3.3V in high
gain mode, BYP_EN = 0V in Bypass mode,
Typical Conditions
(continued)
Frequency = 4.9 GHz to 5.85 GHz unless otherwise noted
RF Port Impedance
LNA Turn On/Off Time
ESD
50
Ω
Input and output. No external matching
100
160
nSec
Human Body Model
500
500
350
V
V
V
EIA/JESD22-114A RF pins
EIA/JESD22-114A DC pins
JESD22-C101C all pins
Charge Device Model
Control Logic Table
Mode
Controls
VDD
LNA_EN
BYP_EN
High Gain
High
High
High
High
High
Low
High
Low
High
Low
Low
High
Bypass Mode
Undefined*
High In/Out Isolation
*This state is not recommended
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131029
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RF5601
Plots
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131029
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RF5601
Evaluation Board Schematic
LNA_EN
BYP_EN
VDD
P1
1
2
3
4
C1
DNP
8
7
RF IN
J1
1
2
6
5
GND
RF OUT
J2
3
4
Evaluation Board Layout
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131029
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RF5601
Application Schematic – 4.9GHz to 5.85GHz
VDD
C1
1uF
8
7
50 Ω µstrip
J1
1
6
5
RFIN
50 Ω µstrip
J3
2
LNA EN
ANT
3
4
Note:
We evaluated this device
with and without C1 but seen
no performance difference.
Depending on the layout and
the nature of the supply
voltage C1 could be used
and stuffed with 1uF
BYP_EN
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131029
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RF5601
Pin Out
8
7
RF IN
1
2
6
5
N/C
LNA_EN
RF OUT
3
4
Package Drawing
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131029
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RF5601
Pin Names and Descriptions
Pin
Name
RF IN
LNA_EN
BYP_EN
NC
Description
RF Input. Input is matched to 50Ω and DC block is provided internally.
LNA Enable. Please see truth table for operation.
Bypass Enable. Please see truth table for operation.
No Connect.
1
2
3
4
5
RF OUT
NC
RF Output. Output is matched to 50Ω and DC-block is provided internally.
No Connect.
6
7
8
VDD
Supply voltage for the LNA circuit.
NC
No Connect
Pkg Base
The center metal base of the QFN package provides DC and RF ground as well as heat sink for the amplifier.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131029
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RF5601
Tape and Reel
Carrier tape basic dimensions are based on EIA 481. The pocket is designed to hold the part for shipping and loading onto SMT
manufacturing equipment, while protecting the body and the solder terminals from damaging stresses. The individual pocket
design can vary from vendor to vendor, but width and pitch will be consistent.
Carrier tape is wound or placed onto a shipping reel either 330 mm (13 inches) in diameter or 178 mm (7 inches) in diameter. The
center hub design is large enough to ensure the radius formed by the carrier tape around it does not put unnecessary stress on
the parts.
Prior to shipping, moisture sensitive parts (MSL level 2a-5a) are baked and placed into the pockets of the carrier tape. A cover
tape is sealed over the top of the entire length of the carrier tape. The reel is sealed in a moisture barrier ESD bag with the
appropriate units of desiccant and a humidity indicator card, which is placed in a cardboard shipping box. It is important to note
that unused moisture sensitive parts need to be resealed in the moisture barrier bag. If the reels exceed the exposure limit and
need to be rebaked, most carrier tape and shipping reels are not rated as bakeable at 125°C. If baking is required, devices may be
baked according to section 4, table 4-1, of Joint Industry Standard IPC/JEDEC J-STD-033.
The table below provides useful information for carrier tape and reels used for shipping the devices described in this document.
RFMD Part Number
Reel
Diameter
Inch (mm)
Hub
Diameter
Inch (mm)
Width
(mm)
Pocket Pitch
(mm)
Feed
Units per
Reel
RF5601TR7
7 (178)
2.4 (61)
12
4
Single
2500
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131029
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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