RFUV1003S2 [RFMD]

GaAs MMIC IQ UpConverter 12GHz to 16GHz;
RFUV1003S2
型号: RFUV1003S2
厂家: RF MICRO DEVICES    RF MICRO DEVICES
描述:

GaAs MMIC IQ UpConverter 12GHz to 16GHz

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RFUV1003  
RFUV1003  
GaAs MMIC IQ UpConverter  
12GHz to 16GHz  
Package: QFN, 32-pin,  
5mm x 5mm x 0.95mm  
RFMD's RFUV1003 is a 12GHz to 16GHz GaAs pHEMT upconverter,  
incorporating an integrated LO buffer amplifier, a balanced single-side band  
(image rejection) mixer followed by a variable gain amplifier and DC  
decoupling capacitors. The combination of high performance part and low  
cost packaging makes the RFUV1003 a cost effective solution, ideally  
suited to both current and next generation Point-to-Point and VSAT  
applications. RFUV1003 is packaged in a 5mm x 5mm QFN to simplify both  
system level board design and volume assembly.  
Features  
RF Frequency: 12GHz to 16GHz  
LO Frequency: 8GHz to 20GHz  
IF Frequency: DC to 4GHz  
Maximum Conversion Gain: 23dB  
Minimum Conversion Gain: -10dB  
Noise Figure (Maximum Gain):  
11dB  
Noise Figure (Minimum Gain):  
17dB  
OIP3 (Maximum Gain): +28dBm  
OIP3 (Minimum Gain): +12dBm  
Image Rejection: 20dBc  
Applications  
Point-to-Point  
VSAT  
Functional Block Diagram  
Ordering Information  
RFUV1003S2  
Sample bag with 2 pieces  
RFUV1003SB  
Bag with 5 pieces  
RFUV1003SQ  
RFUV1003SR  
RFUV1003TR7  
RFUV1003TR13  
RFUV1003PCK-410  
Bag with 25 pieces  
7" Reel with 100 pieces  
7" Reel with 750 pieces  
13" Reel with 2500 pieces  
Evaluation Board with 2-piece sample bag  
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421  
DS140213  
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.  
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,  
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.  
1 of 10  
RFUV1003  
Absolute Maximum Ratings  
Caution! ESD sensitive device.  
Parameter  
Rating  
Unit  
V
LPA Drain Voltage Vd  
LOA Drain Voltage  
RF Input Power  
LO Input Power  
TOPER  
6
6
V
RFMD Green: RoHS compliant per EU  
Directive 2011/65/EU, halogen free per  
IEC 61249-2-21, <1000ppm each of  
antimony trioxide in polymeric materials  
and red phosphorus as a flame retardant,  
and <2% antimony solder.  
15  
dBm  
dBm  
°C  
15  
-40 to +85  
-65 to +150  
Class 1A  
TSTOR  
°C  
Exceeding any one or a combination of the Absolute  
Maximum Rating conditions may cause permanent  
damage to the device. Extended application of Absolute  
Maximum Rating conditions to the device may reduce  
device reliability. Specified typical performance or  
functional operation of the device under Absolute  
Maximum Rating conditions is not implied.  
ESD Human Body Model  
Nominal Operating Parameters  
Specification  
Parameter  
Unit  
Condition  
Min  
Typ  
Max  
General Performance  
RF Frequency  
12  
8
16  
20  
4
GHZ  
GHZ  
GHZ  
dBm  
dB  
LO Frequency  
IF Frequency  
DC  
-1  
LO input Drive  
0
+5  
24  
-11  
13  
21  
Conversion Gain (Max.)  
Conversion Gain (Min.)  
NF (max. Gain)  
20  
-9  
23  
-10  
11  
17  
28  
12  
20  
-5  
dB  
dB  
NF (min. Gain)  
dB  
OIP3 (max. Gain)  
OIP3 (min. Gain)  
Image Rejection  
25  
9
dBm  
dBm  
dBc  
dBm  
15  
LO Leakage at RF-Port (Maximum  
Gain)  
5
With IQ bias  
LO Return Loss  
10  
10  
5
dB  
dB  
V
RF Return Loss  
VD  
ID  
380  
500  
0
mA  
V
VVA  
-4  
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421  
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.  
DS140213  
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of  
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended  
application circuitry and specifications at any time without prior notice.  
2 of 10  
RFUV1003  
Typical Electrical Performance  
Measurements performed with I and Q (IF) ports connected to an external 90° Hybrid, LO Power =  
0dBm and IF = 2.5GHz, -10dBm unless otherwise stated  
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421  
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.  
DS140213  
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of  
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended  
application circuitry and specifications at any time without prior notice.  
3 of 10  
RFUV1003  
Typical Electrical Performance (continued)  
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421  
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.  
DS140213  
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of  
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended  
application circuitry and specifications at any time without prior notice.  
4 of 10  
RFUV1003  
Typical Electrical Performance (continued)  
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421  
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.  
DS140213  
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of  
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended  
application circuitry and specifications at any time without prior notice.  
5 of 10  
RFUV1003  
Typical Electrical Performance (continued)  
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421  
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.  
DS140213  
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of  
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended  
application circuitry and specifications at any time without prior notice.  
6 of 10  
RFUV1003  
Typical Bias Sequence and Gain Control  
Optimum linearity versus gain is achieved using sequential bias. At maximum gain (VC1 ,VC4), VC2 and VC3 are set at -4V. (VC1  
,VC4), VC2 and VC3 are biased in sequence. The first dynamic range is achieved by setting VC2 and VC3 at -4V and varying (VC1  
,VC4) over the (-4V to -1.25V) range as shown in the table below. Similarly second dynamic range is achieved by setting (VC1  
,VC4) at -1V, setting VC3 to -4V and varying VC2 over the (-2.5V to -1.25V) range. Finally third dynamic range is achieved by  
setting (VC1 ,VC4) and VC2 at -1V, and varying VC3 over the (-2.5V to -1V) range.  
Bias Sequence 1 (Typical)  
Gmax  
Gmin  
VC1,  
VC4  
-4  
-2.5 -2.25 -2 -1.75 -1.5 -1.25 -1  
-1  
-1  
-1  
-1  
-1  
-1  
-1  
-1  
-1  
-1  
-1  
-1  
-1  
-1  
VC2  
VC3  
-4  
-4  
-4  
-4  
-4  
-4  
-4  
-4  
-4  
-4  
-4  
-4  
-4 -2.5 -2.25 -2 -1.75 -1.5 -1.25 -1  
-4 -4 -4 -4 -4 -4 -4  
-1  
-2  
-1  
-1  
-2.5 -2.25  
-1.75 -1.5  
Package Outline Drawing (Dimensions in millimeters)  
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421  
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.  
DS140213  
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of  
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended  
application circuitry and specifications at any time without prior notice.  
7 of 10  
RFUV1003  
Pin Names and Descriptions  
Pin  
1
Name  
N/C  
Description  
2
GND  
LO  
Ground  
3
Local oscillator input. AC coupled and matched to 50Ω  
4
GND  
N/C  
Ground  
5-7  
8
VLOA1  
VLOA2  
VMPA  
N/C  
LOA stage 1 drain bias  
LOA stage 2 drain bias  
MPA drain bias  
9
10  
11  
12  
13  
14  
15  
16  
17  
18-20  
21  
22  
23  
24  
25  
26  
27  
28-29  
30  
31  
32  
GND  
RFOUT  
GND  
N/C  
Ground  
RF output. AC coupled and matched to 50W  
Ground  
VC3  
Control line number 3 (See bias sequence description)  
Control line number 2 (See bias sequence description)  
VC2  
N/C  
VC1  
Control line number 1 (See bias sequence description)  
LPA stage 1,2 drain bias  
VLPA1, VLPA2  
N/C  
VC4  
Control line number 4 (See bias sequence description)  
N/C  
Q
IF Q input  
Ground  
GND  
N/C  
I
If I input  
Ground  
GND  
N/C  
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421  
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.  
DS140213  
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of  
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended  
application circuitry and specifications at any time without prior notice.  
8 of 10  
RFUV1003  
Application Circuit Block Diagram  
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421  
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.  
DS140213  
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of  
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended  
application circuitry and specifications at any time without prior notice.  
9 of 10  
RFUV1003  
Evaluation Board Layout  
Test Condition  
LO Power  
Sub-Band Frequency Ranges  
Frequency Range  
0dBm  
-10dBm  
5V  
Band  
10GHz  
11GHz  
13GHz  
15GHz  
IF Power  
10GHz to 10.5GHz  
VLOA1, VLOA2  
10.7GHz to 11.7GHz  
VLPA1, VLPA2, VMPA  
(VC1, VC4), VC2, VC3  
5V  
12.75GHz to 13.25GHz  
14.4GHz to 15.4GHz  
-4V to 0V  
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421  
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.  
DS140213  
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of  
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended  
application circuitry and specifications at any time without prior notice.  
10 of 10  

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