SBB-1000 [RFMD]
50MHZ TO 1000MHZ, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER; 50MHz至1000MHz ，可级联的有源偏置的InGaP HBT MMIC放大器
| 型号： | SBB-1000 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 50MHZ TO 1000MHZ, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER |
| 文件： | 总6页 (文件大小：205K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBB-1000
50MHz to
1000MHz,
Cascadable
Active Bias
InGaP HBT
MMIC Ampli-
fier
Preliminary
SBB-1000
50MHZ TO 1000MHZ, CASCADABLE ACTIVE
BIAS InGaP HBT MMIC AMPLIFIER
Package: Bare Die
Product Description
Features
RFMD’s SBB-1000 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington con-
figuration with an active bias network. The active bias network provides stable current over tem-
ꢀ
OIP3=42dBm @ 250MHz
perature and process Beta variations. Its efficient operation from a single 5V supply and its ꢀP1dB=20dBm @ 500MHz
compact size (0.59mmx0.70mm) make it ideal for high-density multi-chip module applica-
tions. It is well-suited for high linearity 5V gain block applications and it is internally matched to
50Ω.
ꢀ
Single Fixed 5V Supply
ꢀ
Compact Die Size
(0.59mmx0.70mm)
RFMD can provide 100% DC screening, visual inspection, and Hi-Rel wafer qualification. Die
can be delivered at the wafer level or picked to gel or waffle paks.
ꢀ
ꢀ
Patented Thermal Design and
Bias Circuit
Gain and Return Loss versus Frequency
VS=5V, IS=90mA
Optimum Technology
Matching® Applied
Low Thermal Resistance
30.0
20.0
10.0
0.0
GaAs HBT
Applications
GaAs MESFET
ꢀ
PA Driver Amp
GSG Probe Data with Bias
InGaP HBT
Tees ZS=ZL=50 Ohms, T=25°C
ꢁ
ꢀ
RF Pre-driver and RF Receive
Path
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
-10.0
-20.0
-30.0
-40.0
ꢀ
ꢀ
Military Communications
Test and Instrumentation
IRL
Gain
ORL
Si BJT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
GaN HEMT
RF MEMS
Frequency (GHz)
Specification
Typ.
Parameter
Unit
Condition
Min.
50
Max.
1000
Frequency of Operation
Small Signal Gain
Output Power at 1dB Compression
MHz
dB
dBm
dBm
dBm
dBm
15.5
21.5
20.0
19.0
42.0
Freq=250MHz, 500MHz, 1000MHz
Freq=250MHz
Freq=500MHz
Freq=1000MHz
Freq=250MHz
Output IP
3
40.5
35.5
>25
18.5
90
dBm
dBm
dB
dB
mA
Freq=500MHz
Freq=1000MHz
Freq=500MHz
Freq=500MHz
Input Return Loss
Output Return Loss
Current
Noise Figure
3.4
dB
Freq=500MHz
Thermal Resistance
48.8
°C/W
Junction to lead (89 pkg)
Test Conditions: Z =50Ω, V =5V, I =90mA, T=25°C, OIP3 Tone Spacing=1MHz, P /tone=0dBm. GSG Probe Data with Bias Tees.
0
D
D
OUT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-106098 Rev A
1 of 6
Preliminary
SBB-1000
Absolute Maximum Ratings
Parameter
Caution! ESD sensitive device.
Rating
110
Unit
mA
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Total Current (I )
D
Device Voltage (V )
5.5
D
Power Dissipation
0.61
W
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
Operating Lead Temperature (T )
-40 to +85
°C
L
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RF Input Power
+12(TBR)*
-55 to +150
+150
dBm
°C
Storage Temperature Range
Operating Junction Temp (T )
°C
J
ESD Rating - Human Body Model
(HBM)
Class 1C
* TBR=To Be Reviewed
Operation of this device beyond any one of these limits may cause permanent
damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on
page one.
Bias Conditions should also satisfy the following expression:
I V <(T -T )/R , j-l
D
D
J
L
TH
Typical Performance (GSG Probe Data with Bias Tees) VD=5V, ID=90mA, T=25°C, Z=50Ω
Parameter
Units 50MHz 100MHz 250MHz 500MHz 750MHz 1000MHz
Small Signal Gain
dB
15.8
15.6
15.5
15.5
15.5
15.5
Output 3rd Order Intercept Point (see
note 1)
dBm
42.0
40.5
38.0
35.5
Output Power at 1dB Compression
Input Return Loss
dBm
dB
21.5
34.0
21.5
18.5
3.4
20.0
38.0
18.5
18.0
3.4
19.5
32.0
15.5
18.0
3.6
19.0
29.0
13.5
18.0
3.6
17.0
15.0
17.0
3.4
24.0
19.0
18.0
Output Return Loss
dB
Reverse Isolation
dB
Noise Figure
dB
Note 1: 0dBm/tone, 1MHz spacing.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
2 of 6
EDS-106098 Rev A
Preliminary
SBB-1000
Typical Performance (GSG Probe Data with Bias Tees) VD=5.0V, ID=90mA
P1dB versus Frequency
OIP3 versus Frequency
(0dBm/tone, 1MHz spacing)
22.0
21.0
20.0
19.0
18.0
44.0
42.0
40.0
38.0
36.0
34.0
32.0
-20°C
25°C
85°C
-20°C
25°C
85°C
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Frequency (GHz)
Frequency (GHz)
Current versus Voltage
Noise Figure versus Frequency
120.0
110.0
100.0
90.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
80.0
-20°C
25°C
85°C
70.0
25°C
85°C
60.0
4.8
4.9
5.0
5.1
5.2
5.3
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VD (V)
Frequency (GHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-106098 Rev A
3 of 6
Preliminary
SBB-1000
Typical Performance (GSG Probe Data with Bias Tees) VD=5.0V, ID=90mA
S11 versus Frequency
S21 versus Frequency
0.0
-5.0
18.0
17.0
16.0
15.0
14.0
13.0
12.0
-20°C
25°C
85°C
-10.0
-15.0
-20.0
-25.0
-30.0
-35.0
-40.0
-20°C
25°C
85°C
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Frequency (GHz)
Frequency (GHz)
S12 versus Frequency
S22 versus Frequency
0.0
-5.0
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
-35.0
-40.0
-10.0
-15.0
-20.0
-25.0
-30.0
-20°C
25°C
85°C
-20°C
25°C
85°C
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Frequency (GHz)
Frequency (GHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
4 of 6
EDS-106098 Rev A
Preliminary
SBB-1000
Die Dimensions
Bond Pad Description
Bond Pad Function/Description
RF IN
This pad is DC coupled and matched to 50Ω. An external DC block is required.
This pad is DC coupled and matched to 50Ω. DC bias is applied through this pad.
Die backside must be connected to RF/DC ground using silver filled conductive epoxy.
RF OUT
DIE
BACKSIDE
Notes:
1. All dimensions in inches [millimeters].
2. Die Thickness is 0.004 [0.100].
3. Typical bond pad is 0.004 (0.100) square.
4. Backside metallization: Gold.
5. Bond pad metallization: Gold.
6. Backside is ground.
Device Assembly
Ordering Information
Part Number
Description
Devices/Container
SBB-1000
Bare Die
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-106098 Rev A
5 of 6
Preliminary
SBB-1000
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
6 of 6
EDS-106098 Rev A
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