SBB-3089Z-EVB1 [RFMD]

50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK; 50MHz至6000MHz的InGaP HBT有源偏置增益模块
SBB-3089Z-EVB1
型号: SBB-3089Z-EVB1
厂家: RF MICRO DEVICES    RF MICRO DEVICES
描述:

50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK
50MHz至6000MHz的InGaP HBT有源偏置增益模块

文件: 总6页 (文件大小:252K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SBB-3089Z  
50MHz to  
6000MHz  
InGaP HBT  
Active Bias  
Gain Block  
Preliminary  
SBB-3089Z  
50MHz to 6000MHz InGaP HBT ACTIVE BIAS  
GAIN BLOCK  
RoHS Compliant and Pb-Free Product  
Package: SOT-89  
Product Description  
Features  
RFMD’s SBB-3089Z is a high performance InGaP HBT MMIC amplifier uti-  
lizing a Darlington configuration with an active bias network. The active  
bias network provides stable current over temperature and process Beta  
variations. The SBB-3089Z product is designed for high linearity 5V gain  
block applications that require excellent gain flatness, small size, and min-  
imal external components. It is internally matched to 50Ω.  
Single Fixed 5V Supply  
Patented Self Bias Circuit and  
Thermal Design  
Gain=16.4dBm at 1950MHz  
P
=15.2dBm at 1950MHz  
1dB  
Gain and Return Loss  
OIP =29.5dBm at 1950MHz  
3
VS = 5V, IS = 42mA  
30.0  
Robust 1000V ESD, Class 1C  
HBM  
Optimum Technology  
Matching® Applied  
20.0  
MSL 1 Moisture Rating  
GaAs HBT  
S21  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
10.0  
0.0  
Applications  
Bias Tee Data, ZS = ZL = 50 , TL = 25°C  
PA Driver Amplifier  
Cellular, PCS, GSM, UMTS  
IF Amplifier  
-10.0  
-20.0  
-30.0  
S11  
GaAs pHEMT  
Si CMOS  
S22  
Wireless Data, Satellite  
Wideband Instrumentation  
Si BJT  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
GaN HEMT  
RF MEMS  
Frequency (GHz)  
Specification  
Typ.  
Parameter  
Unit  
Condition  
Min.  
Max.  
Small Signal Gain  
16.6  
16.4  
16.3  
15.6  
15.2  
15.4  
30.0  
29.5  
29.5  
21.0  
25.5  
3.9  
dB  
dB  
dB  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dB  
850MHz  
1950MHz  
2400MHz  
850MHz  
1950MHz  
2400MHz  
850MHz  
1950MHz  
2400MHz  
1950MHz  
1950MHz  
1950MHz  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
Input Return Loss  
Output Return Loss  
Noise Figure  
dB  
dB  
Device Operating Voltage  
4.2  
4.3  
46  
V
R
=20Ω, V =5.0V  
DC  
S
Device Operating Current  
Operational Current Range  
Thermal Resistance  
42.0  
mA  
mA  
R
=20Ω, V =5.0V  
DC  
S
30  
Per user preference via R  
Junction to lead  
DC  
80  
°C/W  
Test Conditions: V =4.2V I =42mA T =25°C OIP Tone Spacing=1MHz  
D
D
L
3
R
=20Ω Bias Tee Data Z =Z =50Ω  
P per tone=-5dBm  
OUT  
DC  
S
L
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
EDS-105803 Rev C  
1 of 6  
Preliminary  
SBB-3089Z  
Absolute Maximum Ratings  
Parameter  
Caution! ESD sensitive device.  
Rating  
100  
Unit  
mA  
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may  
cause permanent damage to the device. Extended application of Absolute Maximum  
Rating conditions to the device may reduce device reliability. Specified typical perfor-  
mance or functional operation of the device under Absolute Maximum Rating condi-  
tions is not implied.  
Max Device Current (l )  
D
Max Device Voltage (V )  
6
D
Max RF Input Power* (See Note)  
+20  
dBm  
°C  
RoHS status based on EUDirective2002/95/EC (at time of this document revision).  
Max Junction Temperature (T )  
+150  
J
The information in this publication is believed to be accurate and reliable. However, no  
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any  
infringement of patents, or other rights of third parties, resulting from its use. No  
license is granted by implication or otherwise under any patent or patent rights of  
RFMD. RFMD reserves the right to change component circuitry, recommended appli-  
cation circuitry and specifications at any time without prior notice.  
Operating Temperature Range (T )  
-40 to +85  
°C  
°C  
L
Max Storage Temperature  
+150  
ESD Rating - Human Body Model  
(HBM)  
Class 1C  
Moisture Sensitivity Level  
MSL 1  
*Note: Load condition Z =50Ω  
L
Operation of this device beyond any one of these limits may cause permanent  
damage. For reliable continuous operation, the device voltage and current  
must not exceed the maximum operating values specified in the table on  
page one.  
Bias Conditions should also satisfy the following expression:  
I V <(T -T )/R , j-l and T =T  
D
D
J
L
TH  
L
LEAD  
Typical RF Performance at Key Operating Frequencies (Bias Tee Data)  
Parameter  
Unit  
100  
MHz  
16.9  
29.5  
15.6  
24.0  
21.5  
19.5  
3.7  
500  
MHz  
16.6  
30.5  
16.0  
26.5  
26.0  
19.0  
3.9  
850  
MHz  
16.6  
30.0  
15.6  
24.5  
26.0  
19.5  
3.9  
1950  
MHz  
16.4  
29.5  
15.2  
21.0  
25.5  
19.5  
3.9  
2140  
MHz  
16.4  
29.0  
15.0  
20.5  
25.5  
19.5  
3.9  
2400  
MHz  
16.3  
29.5  
15.4  
20.0  
27.5  
3500  
MHz  
16.1  
27.0  
Small Signal Gain  
Output Third Order Intercept Point  
Output Power at 1dB Compression  
Input Return Loss  
dB  
dBm  
dBm  
dB  
15.2  
15.5  
21.0  
19.5  
3.8  
Output Return Loss  
dB  
Reverse Isolation  
dB  
19.5  
4.0  
Noise Figure  
dB  
Test Conditions: V =4.2V I =42mA OIP Tone Spacing=1MHz, P  
per tone=-5dBm  
R
=20Ω T =25°C Z =Z =50Ω  
DC L S L  
D
D
3
OUT  
Typical Performance with Bias Tees, VD=5V with RDC=20Ω, ID=42mA  
OIP3 versus Frequency,  
P1dB versus Frequency  
(-5dBm/tone, 1MHz spacing)  
34.0  
32.0  
30.0  
28.0  
26.0  
24.0  
20.0  
18.0  
16.0  
14.0  
12.0  
10.0  
25°C  
-40°C  
85°C  
25°C  
-40°C  
85°C  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
Frequency (GHz)  
Frequency (GHz)  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
2 of 6  
EDS-105803 Rev C  
Preliminary  
SBB-3089Z  
Typical Performance with Bias Tees, VS=5V, RDC=20Ω, ID=42mA  
S11 versus Frequency  
S21 versus Frequency  
0.0  
20.0  
18.0  
16.0  
14.0  
12.0  
10.0  
-5.0  
-10.0  
-15.0  
-20.0  
25C  
-40C  
25C  
-40C  
85C  
-25.0  
85C  
-30.0  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
6.0  
3.5  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
Frequency (GHz)  
Frequency (GHz)  
S22 versus Frequency  
S12 versus Frequency  
0.0  
-5.0  
0.0  
-5.0  
-10.0  
-15.0  
-20.0  
-25.0  
-30.0  
-10.0  
-15.0  
-20.0  
-25.0  
-30.0  
25C  
-40C  
85C  
25C  
-40C  
85C  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
Frequency (GHz)  
Frequency (GHz)  
DCIV  
NF versus Frequency  
100.0  
90.0  
80.0  
70.0  
60.0  
50.0  
40.0  
30.0  
20.0  
10.0  
0.0  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
-40°C  
25°C  
85°C  
25°C  
85°C  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
EDS-105803 Rev C  
3 of 6  
Preliminary  
SBB-3089Z  
Application Schematic  
Vs  
RDC  
.1uF  
1000pF  
L1  
4
SBB-3089Z  
2
RF IN  
RF OUT  
1
3
C1  
C2  
Application Circuit Element Values  
Reference Designator 500MHz to 3500MHz  
C1  
C2  
L1  
1000pF  
68pF  
48nH 0805HQ Coilcraft  
Evaluation Board Layout and Bill of Materials  
R
.1uF  
1000pF  
0805  
C2  
C1  
L1  
Sir
e
nza  
MicroDevices  
125763
R
e
v A  
Mounting Instructions  
1. Solder the copper pad on the backside of the device package to the ground plane.  
2. Use a large ground pad area with many plated through-holes as shown.  
3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mm thick FR-4 board with 1  
ounce copper on both sides.  
Recommended Bias Resistor Values for ID=42mA RDC=(VS-VD)/ID  
Supply Voltage (V )  
5V  
6V  
8V  
10V  
12V  
S
R
20Ω  
43Ω  
91Ω  
139Ω  
187Ω  
DC  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
4 of 6  
EDS-105803 Rev C  
Preliminary  
SBB-3089Z  
Pin  
1
Function  
RF IN  
Description  
RF input pin.This pin requires the use of an external DC blocking capacitor chosen for the frequency of opera-  
tion.  
Connection to ground. Use via holes as close to the device ground leads as possible to reduce ground induc-  
tance and achieve optimum RF performance.  
2, 4  
3
GND  
RF output and bias pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency  
of operation.  
RF OUT/  
DC BIAS  
Part Identification  
Suggested Pad Layout  
4
BB3Z  
2 3  
1
Package Drawing  
Dimensions in inches (millimeters)  
Refer to drawing posted at www.rfmd.com for tolerances.  
Ordering Information  
Part Number  
SBB-3089Z  
Description  
Lead Free, RoHS Compliant  
500MHz to 3500MHz  
Reel Size  
Devices/Reel  
7”  
1000  
SBB-3089Z-EVB1  
N/A  
N/A  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
EDS-105803 Rev C  
5 of 6  
Preliminary  
SBB-3089Z  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
6 of 6  
EDS-105803 Rev C  

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