概述
数据手册SGA4586Z 概述
DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA4586Z 数据手册
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PDF下载SGA4586ZDC
to 4000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA4586Z
DC to 4000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-86
Product Description
Features
The SGA4586Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-
figuration featuring one-micron emitters provides high FT and excellent thermal per-
High Gain: 17.9dB at
1950MHz
formance. The heterojunction increases breakdown voltage and minimizes leakage
current between junctions. Cancellation of emitter junction non-linearities results in
higher suppression of intermodulation products. Only two DC-blocking capacitors, a
bias resistor, and an optional RF choke are required for operation.
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
Applications
Optimum Technology
Matching® Applied
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Gain & Return Loss vs. Freq. @TL=+25°C
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
32.0
24.0
16.0
8.0
0.0
GAIN
IRL
-10.0
-20.0
-30.0
-40.0
Wireless Data, Satellite
ORL
GaAs pHEMT
Si CMOS
0.0
0.0
1.0
2.0
3.0
4.0
5.0
Si BJT
Frequency (GHz)
GaN HEMT
RF MEMS
Specification
Parameter
Unit
Condition
Min.
22.0
Typ.
24.0
17.9
16.3
16.5
13.7
28.6
27.7
4000
Max.
26.5
Small Signal Gain
dB
dB
dB
dBm
dBm
dBm
dBm
MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
850MHz
1950MHz
>10dB
Output Power at 1dB Compression
Output Third Intercept Point
Bandwidth Determined by Return
Loss (>10dB)
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance
(Junction - Lead)
19.4
21.5
1.9
3.6
45
dB
dB
dB
1950MHz
1950MHz
1950MHz
V
41
49
mA
°C/W
97
Test Conditions: V =8V, I =45mA Typ., OIP Tone Spacing=1MHz, P
per tone=-5dBm, R
=100Ω, T =25°C, Z =Z =50Ω
S
D
3
OUT
BIAS
L
S
L
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100916
1 of 6
SGA4586Z
Absolute Maximum Ratings
Parameter
Caution! ESD sensitive device.
Rating
Unit
mA
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Max Device Current (I )
90
D
Max Device Voltage (V )
5
D
Max RF Input Power
+18
dBm
°C
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
Max Junction Temp (T )
+150
J
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Operating Temp Range (T )
L
-40 to +85
+150
°C
°C
Max Storage Temp
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I V <(T -T )/R , j-l
D
D
J
L
TH
Typical Performance at Key Operating Frequencies
Parameter
Unit
100
MHz
500
850
1950
2400
3500
MHz
MHz
26.2
27.7
16.3
14.9
20.6
28.4
1.7
MHz
24.0
28.6
16.5
15.0
24.4
26.6
1.7
MHz
18.0
26.0
14.0
19.4
21.5
21.2
1.9
MHz
16.3
26.3
12.7
19.8
18.3
19.3
2.3
Small Signal Gain
Output Third Order Intercept Point
Output Power at 1dB Compression
Input Return Loss
dB
dBm
dBm
dB
dB
dB
18.1
18.5
30.1
16.1
16.1
15.8
Output Return Loss
Reverse Isolation
Noise Figure
dB
Test Conditions: V =8V, I =45mA Typ., OIP Tone Spacing=1MHz, P
per tone=-5dBm, R
=100Ω, T =25°C, Z =Z =50Ω
BIAS L S L
S
D
3
OUT
OIP3 vs. Frequency
VD= 3.2 V, ID= 45 mA
P1dB vs. Frequency
VD= 3.2 V, ID= 45 mA
35
30
25
20
15
18
16
14
12
10
TL=+25ºC
2.5 3
TL=+25ºC
2.5 3
8
0
0
0.5
1
1.5
2
0.5
1
1.5
2
Frequency (GHz)
Frequency (GHz)
Noise Figure vs. Frequency
VD= 3.2 V, ID= 45 mA
5
4
3
2
1
0
TL=+25ºC
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
2 of 6
DS100916
SGA4586Z
Typical RF Performance Over Temperature ( Bias: VD= 3.2 V, ID= 45 mA (Typ.) )
|S21| vs. Frequency
|S11| vs. Frequency
0
-10
-20
-30
-40
32
24
16
8
+25°C
-40°C
+85°C
TL
+25°C
-40°C
+85°C
TL
0
0.0
1.0
2.0
3.0
4.0
5.0
0.0
1.0
2.0
3.0
4.0
5.0
Frequency (GHz)
Frequency (GHz)
|S12| vs. Frequency
|S22| vs. Frequency
0
-10
-20
-30
-40
0
-10
-20
-30
-40
+25°C
-40°C
+85°C
+25°C
TL
-40°C
+85°C
TL
0.0
1.0
2.0
3.0
4.0
5.0
0.0
1.0
2.0
3.0
4.0
5.0
Frequency (GHz)
Frequency (GHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100916
3 of 6
SGA4586Z
Pin
1
Function
RF IN
Description
RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation.
Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead
inductance.
2, 4
GND
RF output and bias pin. DC voltage is present on this pin, therefor a DC-blocking capacitor is necessary for proper opera-
tion.
3
RF OUT/BIAS
Application Schematic
Frequency (Mhz)
Reference
Designator
500
850
1950
2400
3500
RBIAS
CB
CD
LC
220 pF 100 pF
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
VS
100 pF
68 nH
68 pF
33 nH
1000
pF
CD
1 uF
LC
Recommended Bias Resistor Values for ID=45mA
R
Supply Voltage(VS)
RBIAS
BIAS=( VS-VD ) / ID
4
6 V
51
8 V
100
10 V
150
12 V
180
1 SGA4586Z
3
RF in
RF out
CB
2
CB
Note: RBIAS provides DC bias stability over temperature.
Evaluation Board Layout
VS
1 uF
RBIAS
Mounting Instructions
1000 pF
CD
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
LC
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
CB
CB
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
4 of 6
DS100916
SGA4586Z
Suggested Pad Layout
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100916
5 of 6
SGA4586Z
Part Identification
45Z
Ordering Information
Ordering Code
Description
SGA4586Z
13" Reel with 3000 pieces
Sample bag with 25 pieces
7” Reel with 100 pieces
SGA4586ZSQ
SGA4586ZSR
SGA4586ZPCK1
850MHz, 8V Operation PCBA with 5-piece sample bag
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
6 of 6
DS100916
SGA4586Z 相关器件
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