概述
数据手册SGA9189Z-EVB4 概述
Medium Power Discrete SiGe Transistor
SGA9189Z-EVB4 数据手册
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PDF下载SGA9189Z
MediumPower
Discrete SiGe
Transistor
SGA9189Z
Medium Power Discrete SiGe Transistor
Package: SOT-89
Product Description
Features
RFMD’s SGA9189Z is a high performance transistor designed for operation to
3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This
RF device is based on a silicon germanium heterostructure bipolar transistor (SiGe
HBT) process. The SGA9189Z is cost-effective for applications requiring high linear-
ity even at moderate biasing levels. It is well suited for operation at both 5V and 3V.
The matte tin finish on the lead-free package utilizes a post annealing process to
mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95.
This package is also manufactured with green molding compounds that contain no
antimony trioxide nor halogenated fire retardants.
50MHz to 3000MHz Operation
39dBm Output IP3 Typ. at
1.96GHz
12.2dB Gain Typ. at 1.96GHz
25.5dBm P1dB Typ. at 1.96GHz
2.1dB NF Typ. at 0.9GHz
Cost-Effective
Optimum Technology
Matching® Applied
3V to 5V Operation
Typical Gmax, OIP3, P1dB @ 5V,180mA
GaAs HBT
Applications
Wireless Infrastructure Driver
Amplifiers
25
23
21
19
17
15
13
11
9
44
42
40
38
36
34
32
30
28
26
24
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
OIP3
Gmax
CATV Amplifiers
Wireless Data, WLL Amplifiers
GaAs pHEMT
Si CMOS
AN-021 Contains Detailed Appli-
cation Circuits
P1dB
7
5
Si BJT
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
GaN HEMT
RF MEMS
Specification
Parameter
Unit
Condition
Min.
Typ.
Max.
Maximum Available Gain
20.5
dB
900MHz, Z = Z *, Z = Z *
S
S
L
L
13.2
19.0
dB
dB
1960MHz
900MHz [1], Z = Z
Power Gain
17.5
11.2
20.5
13.2
, Z = Z
SOPT L LOPT
S
12.2
40
dB
dBm
1960MHz [2]
900MHz, Z = Z
Output Power at 1dB Compression
Output Third Order Intercept Point
, Z = Z
L LOPT
S
SOPT
SOPT
23.5
36.5
25.5
40.0
dBm
dBm
1960MHz [2]
900MHz, Z = Z
per tone
1960MHz [2]
, Z = Z
P
= +10dBm
S
L
LOPT, OUT
39.0
2.1
dBm
dB
Noise Figure
900MHz, Z = Z
, Z = Z
SOPT L LOPT
S
2.6
180
8.5
47
5.5
180
dB
1960MHz
DC Current Gain
100
7.5
300
195
Breakdown Voltage
Thermal Resistance
Device Operating Voltage
Operating Current
V
°C/W
V
collector - emitter
junction - lead
collector - emitter
155
mA
Test Conditions: V = 5V, I = 180mA (unless otherwise noted), T = 25°C.
CE
CQ
L
[1] 100% Tested [2] Sample Tested
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS121018
1 of 5
SGA9189Z
Absolute Maximum Ratings
Caution! ESD sensitive device.
Parameter
Rating
Unit
mA
mA
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Max Base Current (IB)
5
Max Device Current (ICE)
200
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Max Collector-Emitter Voltage (VCEO)
Max Collector-Base Voltage (VCBO)
Max Emitter-Base Voltage (VEBO)
Max Junction Temp (TJ)
7
20
V
4.8
V
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
+150
See Graph
+150
°C
Operating Temp Range (TL)
Max Storage Temp
°C
*Note: Load condition1, Z = 50.
L
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression: I V < (T - T )/R , j - l and T = T
LEAD
D
D
J
L
TH
L
Typical Performance with Engineering Application Circuit
OIP31
(dBm)
39.5
Freq
(MHz)
VCE
(V)
ICQ
P1dB
Gain
(dB)
S11
(dB)
S22
(dB)
NF
ZSOPT
ZLOPT
()
(mA)
(dBm)
(dB)
()
945
1960
2140
2440
5
5
5
5
184
179
180
180
25.8
25.5
25.4
25.4
18.8
12.2
11.3
10.2
-14
-23
-20
-20
-26
-21
-14
-17
2.1
2.4
2.6
2.7
6.8 -j0.85
7.6 - j11.2
18.1 + j3.4
5.6 - j15.1
16 + j5.9
22.8 + j0.7
23.8 - j9.0
23.1 - j2.7
40.0
39.0
40.0
1
P
= +10dBm per tone for V = 5V, 1MHz tone spacing
CE
OUT
Typical Performance with Engineering Application Circuit
OIP32
(dBm)
34.3
Freq
(MHz)
VCE
(V)
ICQ
P1dB
Gain
(dB)
S11
(dB)
S22
(dB)
NF
ZSOPT
ZLOPT
()
(mA)
(dBm)
(dB)
()
945
1960
2440
3
3
3
165
162
165
22.1
22.4
23.2
17.7
11.8
9.9
-18
-18
-20
-11
-16
-15
2.1
2.2
2.6
9.6 - j1.6
7.8 - j13.1
8.1 - j16.0
11.0 + j1.4
19.3 - j2.9
21.0 - j6.5
35.0
35.3
2
P
= +6dBm per tone for V = 3V, 1MHz tone spacing
CE
OUT
Data above represents typical performance of the application circuits notes in Application Note AN-021. Refer to the applica-
tion note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing
instructions and other key issues to be considered. For the latest application notes please visit our site at wwww.RFMD.com or
call your local sales representative.
Maximum Recommended Operational
Dissipated Power
1.20
C
1.00
B
0.80
0.60
ZLOPT
0.40
ZSOPT
E
Operational Limit (Tj<130C)
0.20
0.00
-40
-10
20
50
80
110
140
Lead Temperature (C)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
2 of 5
DS121018
SGA9189Z
De-embedded S-parameters
(Z = Z = 50, V = 5V, I = 185mA, 25°C)
S
L
CE
CQ
Insertion Gain & Isolation
Insertion Gain vs Temperature
45
35
25
15
5
5
30
25
20
15
10
5
-5
-15
-25
-35
-45
Isolation
T = -40, 25, 85°C
Gmax
0
-5
Gain
-5
-10
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
Frequency (GHz)
Frequency (GHz)
S11 vs Frequency
S22 vs Frequency
1.0
1.0
4 GHz
0.5
2.0
0.5
2.0
5 GHz
3 GHz
5 GHz
4 GHz
3 GHz
2 GHz
2 GHz
0.2
0.2
5.0
5.0
8 GHz
5.0
8 GHz
5.0
1 GHz
0.2
1 GHz
0.2
0.0
0.5
1.0
2.0
0.0
0.5
1.0
2.0
inf
inf
S11
0.2
0.2
5.0
5.0
S22
50 MHz
50 MHz
0.5
2.0
0.5
2.0
1.0
1.0
Note: S-parameters are de-embedded to the device leads with ZS=ZL=50Ω. The data represents typical performace of the device.
De-embedded s-parameters can be downloaded from our website (www.sirenza.com).
DC-IV Curves
400
350
Ib = 0.4 - 3.6 mA , 0.4 mA steps
300
T=25C
250
200
150
100
50
0
0
2
4
6
8
VCE (V)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS121018
3 of 5
SGA9189Z
Pin Names and Descriptions
Pin
1
Name
Base
Description
RF input.
Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible.
2
3
4
Emitter
Collector
Emitter
RF output.
Same as pin 2.
Recommended Mounting Configuration for Optimum RF and Thermal
Performance
Ground Plane
Plated Thru
Holes
(0.020" DIA)
SOT-89
Package
Machine
Screws
Mounting and Thermal Considerations
It is very important that adequate heat sinking be provided to minimize the device junction temperature. The following items
should be implemented to maximize MTTF and RF performance.
1. Multiple solder-filled vias are required directly below the ground tab (pin 4). [CRITICAL]
2. Incorporate a large ground pad area with multiple plated-through vias around pin 4 of the device. [CRITICAL]
3. Use two point board seating to lower the thermal resistance between the PCB and mounting plate. Place machine screws as
close to the ground tab (pin 4) as possible. [RECOMMENDED]
4. Use 2 ounce copper to improve the PCB’s heat spreading capability. [RECOMMENDED]
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
4 of 5
DS121018
SGA9189Z
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
.161
.016
.177 .068
.019.118
.096
.041
.015
.059
Part Identification
Ordering Information
Description
13” Reel with 3000 pieces
Part Number
SGA9189Z
SGA9189ZSQ
Sample Bag with 25 pieces
SGA9189ZSR
7” Reel with 100 pieces
SGA9189Z-EVB1
SGA9189Z-EVB2
SGA9189Z-EVB3
SGA9189Z-EVB4
870MHz to 960MHz, 8V Operation PCBA
1930MHz to 1990MHz, 8V Operation PCBA
2110MHz to 2170MHz, 8V Operation PCBA
2400MHz to 2500MHz, 8V Operation PCBA
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS121018
5 of 5
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