SPA1118Z [RFMD]
850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS;
| 型号： | SPA1118Z |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS 放大器 射频 微波 功率放大器 |
| 文件： | 总6页 (文件大小：436K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPA1118Z
850MHz
1Watt Power
Amplifier with
Active Bias
SPA1118Z
850MHz 1WATT POWER AMPLIFIER WITH
ACTIVE BIAS
Package: Exposed Pad SOIC-8
Product Description
Features
RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Tran-
sistor (HBT) amplifier housed in a low-cost surface-mountable plastic
package. These HBT amplifiers are fabricated using molecular beam epi-
taxial growth technology which produces reliable and consistent perfor-
mance from wafer to wafer and lot to lot. This product is specifically
designed for use as a driver amplifier for infrastructure equipment in the
850MHz band. Its high linearity makes it an ideal choice for wireless data
and digital applications.
High Linearity Performance
+21dBm IS-95 Channel
Power at -55dBc ACP
+48dBm OIP3 Typ.
On-Chip Active Bias Control
Patented High Reliability
GaAs HBT Technology
Optimum Technology
Matching® Applied
Surface-Mountable Plastic
Package
GaAs HBT
Applications
GaAs MESFET
VCC
N/C
N/C
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Multi-Carrier Applications
AMPS, ISM Applications
Active Bias
VBIAS
RFOUT/
VCC
RFIN
N/C
Input
Match
N/C
Si BJT
GaN HEMT
RF MEMS
Specification
Typ.
Parameter
Unit
Condition
Min.
810
Max.
960
Frequency of Operation
Output Power at 1dB Compression
Adjacent Channel Power
MHz
dBm
dBc
29.5
-57.0
-54.0
18.2
IS-95 at 880MHz, ±885 KHz, P =21dBm
OUT
Small Signal Gain
16.2
17.2
1.5:1
48.0
7.5
310
5.0
dB
880MHz
Input VSWR
Output Third Order Intercept Point
Noise Figure
Device Current
Device Voltage
Thermal Resistance (junction-lead)
dBm
dB
mA
V
Power out per tone=+14dBm
275
4.75
330
5.25
°C/W
35
T =85°C
L
Test Conditions: Z =50
V =5V Temp=25°C
CC
0
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS121024
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SPA1118Z
Absolute Maximum Ratings
Parameter
Caution! ESD sensitive device.
Rating
750
Unit
mA
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Max Supply Current (I ) at V typ.
CC
CC
Max Device Voltage (V ) at I typ.
6.0
CC
CC
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Max RF Input Power
24
dBm
°C
Max Junction Temp (T )
+160
J
Max Storage Temp
+150
3
°C
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Moisture Sensitivity Level
MSL
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I V <(T -T )/R , j-l
D
D
J
L
TH
850MHz to 950MHz Application Circuit Data, ICC=320mA, VCC=5V
IS-95 @ 880 MHz
Adj. Channel Pwr. vs. Channel Output Pwr.
Gain vs. Frequency
-45
-50
-55
-60
22
20
18
16
14
12
10
-65
-40C
25C
85C
-40C
85C
25C
-70
-75
17
18
19
20
21
22
23
24
0.85
0.87
0.89
0.91
0.93
0.95
dBm
GHz
Input/Output Return Loss,
Isolation vs. Frequency, T=25°C
P1dB vs. Frequency
32
30
28
26
24
22
20
0
-5
-10
-15
-20
-25
-30
-35
-40
S11
S12
S22
25C
85C
-40C
0.85
0.87
0.89
0.91
0.93
0.95
0.85
0.87
0.89
0.91
0.93
0.95
GHz
GHz
Device Current vs. Source Voltage
450
25C
-40C
85C
400
350
300
250
200
150
100
50
0
0
1
2
3
4
5
Vcc (V)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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SPA1118Z
Pin
1
Function
VCC
Description
Supply voltage for the active bias network. Bypassing in the appropriate location as shown on the application schematic
is required for optimum RF performance.
Bias control pin for the active bias network. Device current is set by the current into this pin. Recommended configura-
tion is shown in the application schematic. Bypassing in the appropriate location as shown on the application schematic
is required for optimum RF performance.
2
VBIAS
RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation.
3
4, 5
6
RF IN
NC
RF OUT/VCC
No connection.
RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present
on this pin a DC-blocking capacitor should be used in most applications. The supply side of the bias network should be
well bypassed. An output matching network is necessary for optimum performance.
No connection.
7, 8
NC
Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and
RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern.
EPAD
GND
Recommended Land Pattern
0.150 [3.81]
Plated-Thru Holes
(0.015" Dia, 0.030" Pitch)
0.140 [3.56]
0.300 [7.62]
Machine
Screws
0.080 [2.03]
0.050 [1.27]
0.020 [0.51]
Note: DIMENSIONSARE IN INCHES [MM]
Branding Diagram
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS121024
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SPA1118Z
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
4 of 6
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SPA1118Z
850MHz to 950MHz Application Schematic
VCC
10uF,
Tantalum
1000pF
392
43pF
1
2
3
4
8
7
6
5
100 nH
22pF
22pF
Z=50 , 17°
5.6 pF
Evaluation Board Layout
Vcc
C2
C3
C4
R1
L1
C1
C6
C5
ECB-101161 Rev. C
SOIC-8 PA
Eval Board
Note: Pins 4, 5, 7, 8 are not
connected internally
Vpc
Ref. Des.
C1, C6
Value
22pF, 5%
Part Number
Rohm MCH18 series
AVX TAJB 106K020R
Rohm MCH18 series
Rohm MCH18 series
Rohm MCH18 series
Coilcraft 1008HQ series
Rohm MCR03 series
C2
10uF, 10%
1000pF, 5%
43pF, 5%
C3
C4
C5
5.6pF, ±0.5pF
100nH, 5%
392, 1%
L1
R1
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS121024
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SPA1118Z
Ordering Information
Ordering Code
SPA1118Z
Description
7” Reel with 500 pieces
SPA1118ZSQ
SPA1118ZSR
SPA1118Z-EVB1
Sample bag with 25 pieces
7” Reel with 100 pieces
850MHz to 950MHz PCBA with 5-piece sample bag
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
6 of 6
DS121024
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