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T-12009 [RHOMBUS-IND]

Wideband RF Impedance Matching Transformers; 宽带RF阻抗匹配变压器

T-12009


元器件型号：	T-12009
生产厂家：	Rhombus Industries Inc.
描述和应用：	Wideband RF Impedance Matching Transformers 宽带RF阻抗匹配变压器变压器
PDF文件：	总1页 (文件大小：39K)
下载文档：	下载PDF数据表文档文件
型号参数：T-12009参数

T1200EA45E

Insulated Gate Bipolar Transistor, 2132A I(C), 4500V V(BR)CES, N-Channel,

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0 LITTELFUSE

T1200EB45E

Insulated Gate Bipolar Transistor, 1200A I(C), 4500V V(BR)CES, N-Channel,

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0 LITTELFUSE

T1200N

PHASE CONTROL THYRISTORS

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76 ETC

T1200TA25A

Insulated Gate Bipolar Transistor, 1141A I(C), 2500V V(BR)CES, N-Channel, TA, 4 PIN

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0 IXYS

T1200TB25A

Insulated Gate Bipolar Transistor, 1200A I(C), 2500V V(BR)CES, N-Channel,

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0 LITTELFUSE

T1200TD25A

Insulated Gate Bipolar Transistor,

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0 IXYS

T1201

ISDN/T1/E1 TRANSFORMER

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0 MPSIND

T-12010

Wideband RF Impedance Matching Transformers

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19 RHOMBUS-IND

T1201G

ISDN/T1/E1 TRANSFORMER

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0 MPSIND

T1201N

Phase Control Thyristor

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24 EUPEC

T1201N60TOH

Silicon Controlled Rectifier, 2600A I(T)RMS, 1200000mA I(T), 6000V V(DRM), 6000V V(RRM), 1 Element,

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0 INFINEON

T1201N65TOH

Silicon Controlled Rectifier, 2600A I(T)RMS, 1200000mA I(T), 6500V V(DRM), 6500V V(RRM), 1 Element,

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0 INFINEON

T1201N70TOH

Silicon Controlled Rectifier, 2600A I(T)RMS, 1200000mA I(T), 7000V V(DRM), 7000V V(RRM), 1 Element

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0 INFINEON

T1202

ISDN/T1/E1 TRANSFORMER

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0 MPSIND

T-1202

2 kW Transformer

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16 RHOMBUS-IND

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