RT8127 [RICHTEK]
暂无描述;型号: | RT8127 |
厂家: | RICHTEK TECHNOLOGY CORPORATION |
描述: | 暂无描述 |
文件: | 总22页 (文件大小:372K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
®
RT8127
High Efficiency Dual-Channel Output Synchronous Buck PWM
Controller with Phase Interleaving and Two LDO Regulators
General Description
Features
z Green Voltage Mode (GVMTM) Control
The RT8127 is a high efficiency Dual-Channel output
synchronous Buck PWM controller with integrated
MOSFET drivers and two LDOs. This part featuresGreen
Voltage Mode (GVMTM) control, which is specifically
designed to improve efficiency at light load condition. At
light load condition, the RT8127 is pin configurable to
automatically operate in diode emulation mode with
constant on-time PFM to reduce switching frequency so
as to improve conversion efficiency. As the load current
increases, the RT8127 leaves the diode emulation mode
and operates in Continuous Conduction Mode (CCM) with
fixed-frequency, 180° out of phase interleaved PWM to
reduce input capacitance. The RT8127 supports 4.5V to
26V input voltage range and has integrated 5V LDO which
supplies the internal gate drivers as well as the controller.
When channel 1 Buck regulator output voltage is higher
than 5V, the supply voltage will be automatically switched
to the Buck regulator output from the integrated 5V LDO.
The RT8127 supports enable/disable function for each
channel and also features external soft-start, adjustable
switching frequency and power good indication. This device
utilizes lossless inductor DCR current sensing for over
current protection. Other protections include over voltage,
under voltage, thermal shutdown and under voltage
lockout.
z High Light Load Efficiency
z Audio-Skip Mode (ASM) at Light Load
z Pin Configurable CCM/DEM Operation
z 180° Interleaving PWM in CCM Operation
z Support 4.5V to 26V Input Voltage Range
z Integrated 5V MOSFET Driver and Bootstrap Circuit
z Integrated 5V and 12V LDO
z Enable Control for Each Channel
z External/Internal Soft-Start
z Programmable LGATE PWM Frequency Setting
(LGFS)
z Automatic Switchable 5V Regulator
z Power Good Indication
z VIN Feed-Forward in Control Loop
z Lossless DCR Current Sensing
z OVP, UVP, OCP, Thermal Shutdown and UVLO
z Small 28-Lead WQFN Package
z RoHS Compliant and Halogen Free
Applications
z Motherboard, Server,Graphic Card
z System Power Supplies
z Power Module
Marking Information
The RT8127 is available in a WQFN-28L4x4 small footprint
package.
0H= : Product Code
YMDNN : Date Code
0H=YM
DNN
Simplified Application Circuit
V
IN
RT8127
V
IN
VIN
UGATE2
PHASE2
LGATE2
UGATE1
PHASE1
LGATE1
1.4µH
1.4µH
V
OUT2
V
OUT1
942µF
942µF
CSP2
CSN2
CSP1
CSN1
EN1/SS1
EN2/SS2
12VLDO
12V/3.3V
GND
Copyright 2014 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
DS8127-05 June 2014
www.richtek.com
1
RT8127
Ordering Information
RT8127
Pin Configurations
(TOP VIEW)
Package Type
QW : WQFN-28L 4x4 (W-Type)
Lead Plating System
G : Green (Halogen Free and Pb Free)
28 27 26 25 24 23 22
Note :
1
2
3
4
5
6
7
21
20
19
18
17
16
15
UGATE2
BOOT2
PHASE2
LGATE2
PGND2
CSP2
UGATE1
BOOT1
PHASE1
LGATE1/RT
PGND1
CSP1
Richtek products are :
GND
` RoHS compliant and compatible with the current require-
ments of IPC/JEDEC J-STD-020.
29
CSN2
CSN1
` Suitable for use in SnPb or Pb-free soldering processes.
8
9 10 11 12 13 14
WQFN-28L 4x4
Functional Pin Description
Pin No.
Pin Name
Pin Function
Channel 2 High Side MOSFET Floating Gate Driver Output. Connect this pin to the
channel 2 high side MOSFET gate.
1
UGATE2
Channel 2 Bootstrap Flying Capacitor Connection Pin. This pin powers channel 2
high side MOSFET driver. Connect this pin to PHASE2 with a ceramic capacitor.
Channel 2 Switching Node Connection Pin. Connect this pin to the joint of high side
MOSFET source and low side MOSFET drain, and the inductor of channel 2.
2
3
4
BOOT2
PHASE2
LGATE2
Channel 2 Low Side MOSFET Gate Driver Output. Connect this pin to the gate of
channel 2 low side MOSFET.
Power Ground of Channel 2. This pin is the return ground of channel 2 low side
MOSFET gate driver. Connect this pin to the PCB ground plane layer with vias.
5
PGND2
6
7
CSP2
CSN2
Positive Current Sense Input for Channel 2.
Negative Current Sense Input for Channel 2.
Channel 2 Regulator Output Voltage Feedback Pin. This pin is the inverting input
node of the error amplifier.
8
9
FB2
COMP2
Channel 2 Regulator Compensation Pin. This pin is the output of the error amplifier.
Channel 2 Enable Pin. Pull this pin to ground to disable channel 2. This pin is
internally pulled high. Leave this pin unconnected to enable channel 2 with default
soft-start time. This pin can also be used for external soft-start interval setting.
Connect a ceramic capacitor to this pin to extend soft-start time.
The input voltage at EN2/SS2 pin must be higher than 2.97V to make sure soft-start
can be finished and PGOOD assertion.
10
11
12
EN2/SS2
PGOOD
EN1/SS1
Power Good Indicator Output. This pin has an open drain structure. Pull this pin high
to a voltage source with a resistor.
Channel 1 Enable Pin. Pull this pin to ground to disable channel 1. This pin is
internally pulled high. Leave this pin unconnected to enable channel 1 with default
soft-start time. This pin can also be used for external soft-start interval setting.
Connect a ceramic capacitor to this pin to extend soft-start time.
The input voltage at EN1/SS1 pin must be higher than 2.97V to make sure soft-start
can be finished and PGOOD assertion.
Copyright 2014 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
2
DS8127-05 June 2014
RT8127
Pin No.
Pin Name
Pin Function
Channel 1 Regulator Compensation Pin. This pin is the output of the error
amplifier.
13
COMP1
Channel 1 Regulator Output Voltage Feedback Pin. This pin is the inverting
input node of the error amplifier.
14
FB1
15
16
CSN1
CSP1
Negative Current Sense Input for Channel 1.
Positive Current Sense Input for Channel 1.
Power Ground of Channel 1. This pin is the return ground of channel 1 low
side MOSFET gate driver. Connect this pin to the PCB ground plane layer
with vias.
17
18
19
PGND1
Channel 1 Low Side MOSFET Gate Driver Output. Connect this pin to the
gate of channel 1 low side MOSFET. This pin is also used to set the PWM
switching frequency in CCM. Connect a resistor from this pin to GND to set
the PWM switching frequency.
LGATE1/RT
PHASE1
Channel 1 Switching Node Connection Pin. Connect this pin to the joint of
high side MOSFET source and low side MOSFET drain, and the inductor of
channel 1.
Channel 1 Bootstrap Flying Capacitor Connection Pin. This pin powers
channel 1 high side MOSFET driver. Connect this pin to PHASE1 with a
ceramic capacitor.
20
21
22
BOOT1
UGATE1
VIN
Channel 1 High Side MOSFET Floating Gate Driver Output. Connect this pin
to the gate of channel 1 high side MOSFET.
IC Power Supply Input. Connect this pin to a voltage source with a bypass
ceramic capacitor connected to GND for noise decoupling. This pin is the
power source of the two integrated LDOs.
12V LDO Output. It is recommended to connect a minimum 1μF ceramic
capacitor from this pin to GND.
23
24
12VLDO
12VLDOEN
12V LDO Enable Pin. Logic-high at this pin enables the integrated 12V LDO.
CCM/DEM Programming Pin. Voltage at this pin determines the operation
mode in each channel.
Connect this pin to GND : both of the channels are set to automatic CCM/DEM
transition operation with audio-skip operation in DEM.
Connect this pin to VCC : both of the channels are set to CCM operation.
Leave this pin floating : channel 1 is set to automatic CCM/DEM transition
operation with audio-skip operation in DEM and channel 2 is set to CCM
operation.
25
SKIP
26
27
LDOEN
VCC
5V LDO Enable Pin. Logic-high at this pin enables the integrated 5V LDO.
Integrated 5V LDO Output. It is recommended to connect a minimum 4.7μF
ceramic capacitor between this pin and ground. VCC is the power supply for
the control circuit and MOSFET drivers.
5V LDO Bypass Input. Connect this pin to channel 1 regulator output (usually
5V). The LDOBYP pin voltage, VLDOBYP, is monitored for controller supply
power swap. When VLDOBYP is higher than the threshold, the controller will
automatically switch the chip power supply from 5V LDO to channel 1 output
and disable the 5V LDO for power saving.
28
LDOBYP
Return Ground of Controller. The exposed pad must be soldered to a large
PCB and connected to ground plane for maximum power dissipation.
29 (Exposed Pad) GND
Copyright 2014 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
DS8127-05 June 2014
www.richtek.com
3
RT8127
Function Block Diagram
BOOT2
UGATE2
PHASE2
BOOT1
UGATE1
PHASE1
PWM
Controller
PWM
Controller
LGATE1/RT
PGND1
LGATE2
0 °
180 °
PGND2
12VLDO
12VLDOEN
OSC
GND
12VLDO
5VLDO
VIN
GVM CTL
V
TH_LDOBYP
Operation
The RT8127 is a dual output voltage mode synchronous
Buck controller with integrated MOSFET drivers and two
LDOs. The 12VLDO output also can be stepped down to
3.3V by the controlling of 12VLDOEN pin.
Over Current Protection (OCP)
The over current protection is triggered if the voltage
difference between CSPx and CSNx over 40mV for 16
switching cycles. Both UGATEx and LGATEx will go low
until VCC is resupplied and exceeds the POR rising
threshold voltage.
The controller has a fixed frequency control with 180° phase
shift in CCM. The fixed frequency can be adjusted from
typical 300kHz to 600kHz.
Over Voltage Protection (OVP)
The controller supports dynamic mode transition function
with three operating states : forced CCM,Diode Emulation
Mode (DEM) and audio skipping modes at light load.
If the FBx voltage is higher than the OVP threshold
(typically 120% x VREF) during normal operation, OVP
will be triggered. When OVP is triggered, UGATEx goes
low and LGATEx is forced to high.
Enable
The recommended ON / OFF control can tie the ENx to
GND with a switch.
Under Voltage Protection (UVP)
If the FBx voltage is lower than the UVP threshold
(typically 50% x VREF) during normal operation, UVP will
be triggered. When UVP is triggered, both UGATEx and
LGATEx go low until VCC is resupplied and exceeds the
POR rising threshold voltage.
Under Voltage Lockout (UVLO)
During normal operation, if the voltage at the VCC pin
drops below UVLO falling edge threshold. The VCC UVLO
circuitry inhibits switching by keeping UGATEx and
LGATEx low.
Copyright 2014 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
4
DS8127-05 June 2014
RT8127
PGOOD
PGOOD is actively held low in soft-start, standby, and
shutdown conditions. It is released when both output
voltages of VFB1 and VFB2 are within 20% of the nominal
regulation point.
LDOBYP
When VLDOBYP is higher than the threshold, the controller
will automatically switch the chip power supply from 5V
LDO to channel 1 output and disable the 5V LDO for power
saving.
Soft-Start
An internal current source charges the internal soft-start
capacitor such that the internal soft-start voltage ramps
up uniformly. The FB voltage will track the internal soft-
start voltage during the soft-start interval.
The RT8127 also provides an external soft-start function.
An additional capacitor connected at SSx pin will be
charged by a 10μA current source and determines the
soft-start time.
Copyright 2014 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
DS8127-05 June 2014
www.richtek.com
5
RT8127
Absolute Maximum Ratings (Note 1)
z Supply Voltage, VIN --------------------------------------------------------------------------------- −0.3V to 30V
z VCC, PVCC, LDOBYP------------------------------------------------------------------------------ −0.3V to 6V
z PGOOD ------------------------------------------------------------------------------------------------- −0.3V to 6V
z LDOEN -------------------------------------------------------------------------------------------------- −0.3V to 30V
z BOOT to PHASE ------------------------------------------------------------------------------------- −0.3V to 6V
z PHASE to GND
DC-------------------------------------------------------------------------------------------------------- −0.7V to (VIN + 0.3V)
<20ns --------------------------------------------------------------------------------------------------- −5V to 30V
<10ns --------------------------------------------------------------------------------------------------- −10V to 30V
<5ns ----------------------------------------------------------------------------------------------------- −15V to 30V
z UGATE toGND
DC-------------------------------------------------------------------------------------------------------- (VPHASE − 0.3V) to (VBOOT + 0.3V)
<20ns --------------------------------------------------------------------------------------------------- (VPHASE − 5V) to (VBOOT + 5V)
z LGATE toGND
DC-------------------------------------------------------------------------------------------------------- (GND − 0.3V) to (VCC + 0.3V)
<20ns --------------------------------------------------------------------------------------------------- (GND − 5V) to (VCC + 5V)
z Other Pins---------------------------------------------------------------------------------------------- (GND − 0.3V) to 6V
z Power Dissipation, PD @ TA = 25°C
WQFN-28L 4x4 --------------------------------------------------------------------------------------- 1.923W
z Package Thermal Resistance (Note 2)
WQFN-28L 4x4, θJA ---------------------------------------------------------------------------------- 52°C/W
WQFN-28L 4x4, θJC --------------------------------------------------------------------------------------------------------------------- 7°C/W
z Junction Temperature -------------------------------------------------------------------------------- 150°C
z Lead Temperature (Soldering, 10 sec.)---------------------------------------------------------- 260°C
z Storage Temperature Range ----------------------------------------------------------------------- −65°C to 150°C
z ESD Susceptibility (Note 3)
HBM (Human Body Model)------------------------------------------------------------------------- 2kV
Recommended Operating Conditions (Note 4)
z Supply Voltage, VIN --------------------------------------------------------------------------------- 4.5V to 26V
z Junction Temperature Range----------------------------------------------------------------------- −40°C to 125°C
z Ambient Temperature Range----------------------------------------------------------------------- −40°C to 85°C
Electrical Characteristics
(VIN = 12V, VCC = 5V, TA = 25°C, unless otherwise specified)
Parameter
General
Symbol
Test Conditions
Min
Typ Max Unit
VIN Supply Voltage
VIN Supply Current
VCC Power On Reset
VCC POR Hysteresis
VIN
4.5
--
12
2
26
--
V
mA
V
IVIN
VPOR
ΔVPOR
--
4.2
0.3
--
--
--
V
Copyright 2014 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
6
DS8127-05 June 2014
RT8127
Parameter
Symbol
Test Conditions
Min Typ Max Unit
EN1, EN2, LDOEN, 12VLDOEN = 0V
--
--
5
Shutdown Current
I
I
μA
μA
VIN_SHDN
EN1, EN2, LDOEN = 0V,
12VLDOEN = 5V / 2.5V
--
100
150
EN1, EN2 = 0V, LDOEN = 5V,
12VLDOEN = 5V / 2.5V
EN1, EN2 = 0V, LDOEN = 5V,
12VLDOEN = 0V
--
--
350
300
400
350
Standby Current
VIN_SBY
5V LDO
Output Voltage
Regulation
V
V
= 12V, Load Current = 100mA
4.9
60
5
5.15
--
V
CC
IN
Current Capability
LDOBYP
I
--
mA
VCC_SRC
LDOBYP Threshold
LDOBYP Hysteresis
V
4.8
--
4.9
0.1
5
V
V
TH_LDOBYP
ΔV
0.25
TH_LDOBYP
LDOBYP Internal Switch
On-Resistance
R
--
--
1
Ω
LDOBYP
12V LDO
Source Current Capability I
10
--
--
mA
V
12VLDO
Voltage Regulation for
12V Output
V
V
V
= 15V, Load Current = 10mA
= 15V, Load Current = 10mA
11.4
12
12.6
12VLDO
3.3VLDO
IN
IN
Voltage Regulation for
3.3V Output
V
3.1
3.3
3.5
V
Enable Control
EN1/EN2 Threshold
EN1/EN2 Hysteresis
LDOEN Threshold
LDOEN Hysteresis
V
0.58 0.68 0.78
V
mV
V
EN
ΔV
--
1.4
--
78
1.6
0.2
--
1.8
--
EN
V
TH_LDOEN
ΔV
V
TH_LDOEN
12VLDOEN Input for 3.3V
Output
V
12VLDO Output = 3.3V
12VLDO Output = 12V
2
2.5
3
V
TH_12VLDOEN_3.3V
12VLDOEN Input for 12V
Output
V
V
4.5
--
5
5.5
0.4
V
V
TH_12VLDOEN_12V
TH_12VLDOEN
12VLDOEN Disable
PGOOD
--
PGOOD Threshold
Error Amplifier
Open Loop Gain
Gain Bandwidth
Slew Rate
V
With Respect to V
80
--
120
%
PGOOD
OL
REF
A
(Note 5)
(Note 5)
--
--
--
80
15
2
--
--
--
dB
GBW
SR
MHz
V/μs
COMP Pin to GND with 10pF
Reference Voltage
Reference Voltage
V
792
800
808
mV
REF
Copyright 2014 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
DS8127-05 June 2014
www.richtek.com
7
RT8127
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
PWM Controller
R
R
R
R
= 1.8k
255
297
340
510
80
300
350
400
600
--
345
402
460
690
--
LGFS
LGFS
LGFS
LGFS
= 4.7k
= 9.1k
= 16k
Switching Frequency
f
kHz
SW
Maximum Duty Cycle
Ramp Amplitude
D
%
V
MAX
ΔV
V
= 12V
IN
--
2.4
0.8
180
--
OSC
Ramp Valley
V
--
--
V
RAMPOFS
PWM Clock Interleaving
MOSFET Driver
CCM Operation
(Note 5)
--
--
Deg
UGATE Driver Source
UGATE Driver Sink
LGATE Driver Source
LGATE Driver Sink
R
R
R
R
V
− V = 5V
PHASE
--
--
--
--
2.5
1.5
2
--
--
--
--
Ω
Ω
Ω
Ω
UGATEsr
UGATEsk
LGATEsr
LGATEsk
BOOT
1
Deadtime between UGATE Off
and LGATE On
Deadtime between LGATE Off
and UGATE On
CCM Operation
CCM Operation
Current = 10mA
--
--
--
40
20
--
--
--
ns
ns
V
Embedded Bootstrap Diode
Voltage Drop
V
0.8
DROP
Soft-Start
Internal Soft-Start Time
t
6
9
--
ms
SS
Enabled when EN = L, measure
CSN1/CSN2 resistance
Soft-Stop Resistance
R
--
--
80
Ω
PL
SKIP Pin
Logic-High
SKIP Input
V
V
CH1 and CH2 : CCM
3.6
--
--
--
--
IH
IL
V
Threshold Voltage
Logic-Low
CH1 and CH2 : Automatic CCM/DEM
1.4
Audio Skip Mode PWM
Frequency
f
--
30
--
kHz
SW_ASM
Protection
Over Voltage Protection
Under Voltage Protection
UVP Delay
V
V
After VCC POR, with Respect to V
110
--
120
50
2
130
--
%
%
OVP
UVP
REF
After Soft-Start, with Respect to V
REF
t
1.4
35
--
ms
mV
D_UVP
OCP Threshold Voltage
V
Measure V
Measure V
− V
− V
40
45
OCP
SCP
ISP
ISP
ISN
ISN
Short Circuit OCP Threshold
Voltage
V
--
60
--
mV
Thermal Shutdown Temperature T
--
--
150
40
--
--
°C
°C
SD
SD
Thermal Shutdown Hysteresis
ΔT
Copyright 2014 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
8
DS8127-05 June 2014
RT8127
Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is
measured at the exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Note 5. Guaranteed by design.
Copyright 2014 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
DS8127-05 June 2014
www.richtek.com
9
RT8127
Typical Application Circuit
V
IN
C1
270µF
C2
0.1µF
R29
10
RT8127
BOOT1
R1
0.5
20
21
C5
22
VIN
0.1µF
C14
1µF
R2
0.5
R15
10k
NTMFS4
921NT1G
R17
30k
V
UGATE1
OUT1
5V
26
L1
1.4µH
Q1
Q2
LDOEN
19
18
PHASE1
24
C4
C3
12VLDOEN
LGATE1/RT
NTMFS4
936NT1G
optional
R
NTC1
R3
2.2
10k
R16
6.8k 11k
R18
22µF
940µF
NC
R5
C7
2.2nF
R
1.8k
LGFS
R19
R6 10k
0.1µF
0
2
1
BOOT2
C16
C6
C17
R4 68k
16
15
C15
0.1µF
CSP1
CSN1
10µF
270µF
Q3
V
OUT2
3.3V
UGATE2
R7
C8
0.1µF
NTMFS4
921NT1G
C11
820
R20
C9 120pF
6.8nF
L2
0
1.4µH
3
4
13
14
COMP1
FB1
PHASE2
LGATE2
R9
C10
6.2k
R8 27k
1nF
optional
R
NTC2
10k
R21
2.2
Q4
C21
22µF
R14
1.2k
NC
NTMFS4
936NT1G
C18
2.2nF
R13
10
R22 R23
10k
28
27
C20
LDOBYP
VCC
0.8k
R24
C12
0.1µF
6
7
C19 0.1µF
940µF
CSP2
CSN2
C13
4.7µF
R10
30k
C25
6.8nF
C23
120pF
11
25
R25 820
C24
C22
0.1µF
PGOOD
PGOOD
R28
27k
R26
9
8
R11
COMP2
FB2
0
6.2k
1nF
SKIP
R27
1.96k
R12
NC
5
PGND2
PGND1
12
10
EN1/SS1
EN2/SS2
17
Q5
Q6
C26
NC
CH1 Enable
CH2 Enable
23
12VLDO
GND
12V/3.3V
29 (Exposed Pad)
C27
NC
Copyright 2014 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
10
DS8127-05 June 2014
RT8127
Typical Operating Characteristics
Efficiency vs. Load Current
Efficiency vs. Load Current
100
90
80
70
60
50
40
30
20
10
0
100
VIN = 12V, VCC = 5V, VOUT = 5V,
EN1 = EN2 = 12VLDOEN
= LDOEN = ON
80
VIN = 19V, VCC = 5V, VOUT = 5V,
EN1 = EN2 = 12VLDOEN
= LDOEN = ON
90
70
60
AUTO SKIP
AUTO SKIP
FCCM
FCCM
50
40
30
20
10
0
0.001
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
100
100
Load Current (A)
Load Current (A)
Efficiency vs. Load Current
Efficiency vs. Load Current
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
VIN = 24V, VCC = 5V, VOUT = 5V,
EN1 = EN2 = 12VLDOEN
= LDOEN = ON
VIN = 12V, VCC = 5V, VOUT = 3.3V,
EN1 = EN2 = 12VLDOEN
= LDOEN = ON
AUTO SKIP
AUTO SKIP
FCCM
FCCM
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
100
Load Current (A)
Load Current (A)
Efficiency vs. Load Current
Efficiency vs. Load Current
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
VIN = 19V, VCC = 5V, VOUT = 3.3V,
EN1 = EN2 = 12VLDOEN
= LDOEN = ON
VIN = 24V, VCC = 5V, VOUT = 3.3V,
EN1 = EN2 = 12VLDOEN
= LDOEN = ON
AUTO SKIP
AUTO SKIP
FCCM
FCCM
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
100
Load Current (A)
Load Current (A)
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11
RT8127
Shutdown Response
Power Up
VOUT1
VOUT1
(5V/Div)
PGOOD
(5V/Div)
(5V/Div)
PGOOD
(5V/Div)
EN1
EN1
(5V/Div)
(5V/Div)
UGATE1
(10V/Div)
UGATE1
(10V/Div)
VIN = 12V, VCC = 5V
VIN = 12V, VCC = 5V
Time (10ms/Div)
Time (1ms/Div)
VOUT1 Load Transient Response
VOUT2 Load Transient Response
VOUT2
VOUT1
(50mV/Div)
(50mV/Div)
Inductor
Current
(10A/Div)
Inductor
Current
(10A/Div)
LGATE2
(10V/Div)
LGATE1
(10V/Div)
UGATE2
(20V/Div)
UGATE1
(20V/Div)
VIN = 12V, VCC = 5V, VOUT = 3.3V, Load = 0 to 5A
VIN = 12V, VCC = 5V, VOUT = 5V, Load = 0 to 5A
Time (100μs/Div)
Time (100μs/Div)
OCP
Shorted Start Up
VOUT2
(1V/Div)
VOUT1
(5V/Div)
Inductor
Current
(20A/Div)
Inductor
Current
(20A/Div)
LGATE2
(5V/Div)
LGATE1
(5V/Div)
UGATE1
(20V/Div)
UGATE2
(10V/Div)
VIN = 12V, VCC = 5V
VIN = 12V, VCC = 5V
Time (10μs/Div)
Time (200μs/Div)
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DS8127-05 June 2014
RT8127
OVP
UVP
VOUT1
(2V/Div)
FB2
(500mV/Div)
PGOOD
Inductor
Current
(5A/Div)
(5V/Div)
LGATE1
(5V/Div)
LGATE2
(5V/Div)
UGATE1
(10V/Div)
UGATE2
(10V/Div)
VIN = 12V, VCC = 5V
VIN = 12V, VCC = 5V
Time (50μs/Div)
Time (10μs/Div)
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13
RT8127
Application Information
The RT8127 is a dual output voltage mode synchronous
Buck controller with integrated MOSFET drivers and two
LDOs. It is suited to 5V/3.3V low voltage power supplies
with demanding high efficiency and fast transient response,
such as graphic card and motherboard. The internal linear
regulators named 5VLDO and 12VLDO respectively
provides 5V and 12V outputs. The internal circuitry and
gate drivers can be supplied by the 5VLDO or the output
of 5V channel. When the output voltage of 5V channel is
above 4.85V, the 5VLDO will be turned off and the device
is supplied by the output of 5V channel.
inductor free wheeling current becomes negative. As the
load current is further decreased, it takes longer and longer
time to discharge the output capacitor to the level that
requires the next “ON” cycle. In reverse, when the output
current increases from light load to heavy load, the
switching frequency increases to the preset value as the
inductor current reaches the continuous conduction.
The transition load point to the light load operation is shown
in Figure 1 and can be calculated as follows :
I
L
Slope = (V - V
) / L
IN
OUT
I
L, peak
The RT8127 supports dynamic mode transition function
with three operating states: forced CCM,Diode Emulation
Mode (DEM) and audio skipping modes at light load. These
different operating states improve the system efficiency
as high as possible. The RT8127 has a fixed frequency
control with 180°phase shift in CCM. The fixed frequency
can be adjusted from typical 300kHz to 600kHz by the
I
= I
/ 2
Load
L, peak
0
t
ON
external resistor RLGFS
.
Figure 1. Boundary of Inductor current betweenDEM
and CCM
Operation Mode Selection
V
− V
OUT
2L
(
× t
IN
The SKIP pin is used to select the operation mode. When
the SKIP pin is tied to VCC, both of the channels operate
in forced-CCM mode. When the SKIP pin is connected to
GND, both of the channels operate in automatic CCM/
DEM and transition operation with audio-skip mode inDEM.
When the SKIP pin is floating, channel 1 operates in
automatic CCM/DEM and transition operation with audio-
skip mode inDEM, and channel 2 operates in forced-CCM
mode.
I
≈
Load (SKIP)
ON
where tON is the on-time.
Audio Skip Mode
The RT8127 activates a unique type of Diode Emulation
Mode with a minimum switching frequency of 30kHz,
called Audio Skip Mode. This mode eliminates audio-
frequency modulation that would otherwise be present
when a lightly loaded controller automatically skips
pulses. In Audio Skip Mode, the low side switch gate
driver signal is “OR”ed with an internal oscillator
(>30kHz). Once the internal oscillator is triggered, the
ultrasonic controller pulls LGATEx high and turns on the
low side MOSFET to induce a negative inductor current.
After the output voltage falls below the reference voltage,
the controller turns off the low side MOSFET (LGATEx
pulled low) and triggers a constant on-time (UGATEx driven
high). When the on-time has expired, the controller re-
enables the low side MOSFET until the controller detects
that the inductor current dropped below the zero crossing
threshold.
Diode-Emulation Mode
In Diode Emulation Mode, the RT8127 automatically
reduces switching frequency at light load conditions to
maintain high efficiency. This reduction of frequency is
achieved smoothly. As the output current decreases from
heavy-load condition, the inductor current is also reduced,
and eventually comes to the point that its current valley
touches zero, which is the boundary between continuous
conduction and discontinuous conduction modes. By
emulating the behavior of diodes, the low side MOSFET
allows only partial negative current to flow when the
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DS8127-05 June 2014
RT8127
Forced-CCM Mode
start function will be chosen. The external soft-start
sequence is shown in Figure 2. During soft-start period,
the FB voltage will track the reference voltage VREF which
slew rate is according to the slew rate of the ENx pin
voltage.During shut down period, the FB voltage also tracks
reference voltage which slew rate is according to the ENx
pin voltage.
The low noise, forced-CCM mode (SKIP = VCC) disables
the zero-crossing comparator, which controls the low side
switch on-time. This causes the low side gate-driver
waveform to become the complement of the high side
gate-driver waveform. This in turn causes the inductor
current to reverse at light loads as the PWM loop strives
to maintain a duty ratio of VOUT/VIN. The benefit of forced-
CCM mode is to keep the switching frequency fairly
constant, but it comes at a cost : The no-load current will
slightly increase, depending on the external MOSFET(s),
reference and linear regulators.
In order to prevent LGATEx turn on for a long time to induce
violent inductor current in shutdown interval, the falling
slew rate of the ENx pin voltage should not slower than
1V/μs and the recommended inductor should be higher
than 1μH.
The recommended ON / OFF control is to connect the
ENx to GND with a MOSFET. If the external source is
directly connected to the ENx pin to control ON / OFF,
the external source must be higher than 2.97V to make
sure soft-start can be finished and PGOOD assertion.
MOSFET Gate Driver
The high side driver is designed to drive high current, low
RDS(on) N-MOSFET(s). When configured as a floating
driver, 5V bias voltage is delivered from 5VLDO supply.
The average drive current is also calculated by the gate
charge at VGS = 5V times switching frequency. The
instantaneous drive current is supplied by the flying
capacitor between BOOTx and PHASEx pins.Adead time
to prevent shoot through is internally generated between
high side MOSFET off to low side MOSFET on, and low
side MOSFET off to high side MOSFET on. The low side
driver is designed to drive high current low RDS(on)
N-MOSFET(s). The internal pull-down transistor that drives
LGATEx low is robust, with a 0.6Ω typical on resistance.
A 5V bias voltage is delivered from 5VLDO supply. For
high current applications, some combinations of high and
low side MOSFET(s) may cause excessive gate-drain
coupling, which can lead to efficiency-killing and EMI
producing shoot-through currents. This is often remedied
by adding a resistor in series with BOOTx, which increases
the turn-on time of the high side MOSFET without degrading
the turn-off time.
When LDOEN is Low, both VOUT1 and VOUT2 will shut
down even though EN1 or EN2 are ON state. When LDOEN
is ON state, VOUT1 and VOUT2 are controlled
independently by EN1 and EN2. The 12VLDO stays alive
only consider if 12VLDOEN is ON state.
2.97
1.6
1.6
0.8
0.8
EN shutdown
threshold
ENx
0
0.8
V
Slew rate is controlled
by ENx pin voltage
REF
V
REF
0
SSOK
PGOOD
UGATEx
LGATEx
FCCM
Enable
UGATEx
LGATEx
DEM
with
ASM
The RT8127 provides external soft-start function and
enables control through the ENx pin.
Soft-Start
Ultrasonic Mode
(Load Current Dependent)
The internal soft-start function or external soft-start function
will be chosen according to the slew rate of the ENx pin
voltage. If the slew rate of ENx pin voltage is slower than
the slew rate of internal soft-start ramp, the external soft-
Figure 2. External Soft-Start Sequence
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15
RT8127
Table1. Enable Logic States
12VLDOEN
5VLDOEN
EN1
EN2
12VLDO 5VLDO
VOUT1
OFF
OFF
OFF
ON
VOUT2
OFF
OFF
OFF
OFF
ON
L
L
L
X(don’t care)
X(don’t care)
OFF
OFF
OFF
ON
H
X(don’t care)
X(don’t care)
ON
L/H
L/H
L/H
L/H
H
H
H
H
L
H
L
L
L
OFF/ON
OFF/ON
OFF/ON
OFF/ON
ON
H
H
ON
OFF
ON
H
ON
ON
Soft-Start
Supply Voltage and Power On Reset (POR)
The RT8127 provides an internal soft-start function. The
soft-start function is used to prevent large inrush current
and output voltage overshoot while the converter is being
powered up. The soft-start function automatically begins
once the chip is enabled. An internal current source
charges the internal soft-start capacitor such that the
internal soft-start voltage ramps up uniformly. The FB
voltage will track the internal soft-start voltage during the
soft-start interval. The PWM pulse width increases
gradually to limit the input current. After the internal soft-
start voltage exceeds the reference voltage, the FB voltage
no longer tracks the soft-start voltage but rather follows
the reference voltage. Therefore, the duty cycle of the
UGATE signal as well as the input current at power up are
limited.
VCC is the power supply for the control circuit and
MOSFET driver. An internal linear regulator regulates the
supply voltage for internal control logic circuit. Aminimum
0.1μF ceramic capacitor is recommended to bypass the
supply voltage. Place the bypassing capacitor physically
near the IC. VCC also supplies the integrated MOSFET
drivers. A bootstrap diode is embedded to facilitate PCB
design and reduce the total BOM cost. No external
Schottky diode is required in real applications. The Power
On Reset (POR) circuit monitors the supply voltage at
the VCC pin. If VCC exceeds the POR rising threshold
voltage (typ. 4.2V), the controller resets and prepares the
PWM for operation. If VCC falls below the POR falling
threshold during normal operation, all MOSFET(s) stop
switching. The POR rising and falling threshold has a
hysteresis (typ. 0.3V) to prevent unintentional noise based
reset.
The RT8127 also provides a proximate external soft-start
function shown in Figure 3. An additional capacitor
connected from ENx/SSx pin to the GND will be charged
by a 10μA current source and determines the soft-start
time.
Low Dropout Regulators (LDOx)
The RT8127 includes 5V and 12V low dropout regulators.
The 5V regulator can supply up to 60mAfor external loads.
Bypass LDOx with a minimum 1μF ceramic capacitor.
When the output voltage of 5V channel is higher than the
switch over threshold (4.85V), an internal 1Ω P-MOSFET
switch connects LDOBYP to the 5VLDO pin while
simultaneously disconnects the internal linear regulator.
ΔV
ENx
VOUTx
Soft-Start time
The 12VLDO output can be stepped down to 3.3V by
connecting 12VLDOEN pin to 2V to 3V.
Figure 3. External Soft-Start
The soft-start time can be calculated as :
C×ΔV
I
SS
(
Under Voltage Lockout (UVLO)
t
=
SS
During normal operation, if the voltage at the VCC pin
drops below UVLO falling edge threshold.
Where, ISS = 10μA, ΔV = 1V, and C is the external capacitor
placed from ENx/SSx to GND. The recommend C is
0.15μF to 0.2μF.
The VCC Under Voltage Lockout (UVLO) circuitry inhibits
switching by keeping UGATEx and LGATEx low.
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DS8127-05 June 2014
RT8127
Power Good Output (PGOOD)
delay and latched. Also to prevent false triggering, the
SCP threshold is designed to be 1.5 times of OCP
threshold.
PGOOD is an open-drain output and requires a pull up
resistor. PGOODis actively held low in soft-start, standby,
and shutdown. It is released when both output voltages
are within 20% of the nominal regulation point for RT8127.
The over current threshold of inductor peak current (ILPK_OC
)
and load current (ILOAD_OC) can be calculated by the
following equations :
The PGOOD delay time is from FB exceeding 80% of
VREF to PGOOD rising high, the delay time is around 3
times the soft-start time tSS.
VX_OC
DCR
RX +RY
ILPK_OC
=
×
RY
Where VX_OC = 40mV
V − V
× V
OUT
Current Sensing
(
−
LPK_OC
IN
OUT
I
= I
LOAD_OC
2×L × V ×f
X
IN SW
The CSPx and CSNx denote the positive and negative
input of the current sense amplifier. Users can either use
a current sense resistor or the inductor'sDCR for current
sensing. Using inductor's DCR allows higher efficiency
as shown in Figure 4.
Over Voltage Protection (OVP)
The voltage on the FBx pin is monitored for over voltage
protection. If the FBx voltage is higher than the OVP
threshold (typically 120% x VREF) during normal operation,
OVP will be triggered. When OVP is triggered, UGATEx
goes low and LGATEx is forced high. The controller is
latched until VCC is resupplied and exceeds the POR
rising threshold voltage.
V
IN
V
OUT
Lx DCR
PHASEx
I
L
R
X
R
C
Y
X
CSPx
CSNx
+ V -
X
Under Voltage Protection (UVP)
The voltage on the FBx pin is also monitored for under
voltage protection. If the FBx voltage is lower than the
UVP threshold (typically 50% x VREF) during normal
operation, UVP will be triggered. When UVP is triggered,
both UGATEx and LGATEx go low until VCC is resupplied
and exceeds the POR rising threshold voltage.
Figure 4. Lossless Inductor Sensing
The sensing voltage VX can be set as :
R
Y
V
=
×I ×DCR
L
X
R +R
X
Y
Then the value of RX, RY and CX can be calculated as :
LX
DCR
= R // RY ×C
(
)
X
X
Output Voltage Setting
Over Current Protection
The RT8127 allows the output voltage of the DC/DC
converter to be adjusted from 0.8V to 80% of VIN via an
external resistor divider as shown in Figure 5. It will try to
maintain the feedback pin at internal reference voltage.
The Over Current Protection (OCP) of RT8127 is detected
from the inductor current sensing for good accuracy.
Therefore, the controller can be less noise sensitive. The
over current protection is triggered if the voltage difference
between CSPx and CSNx exceeds 40mV for continuous
16 switching cycles. Once the OCP is triggered, both of
the UGATE and LGATE will go low until VCC is resupplied
and exceeds the POR rising threshold voltage.
V
OUT
R
FB1
FB2
FB
R
Except the OCP function described above, the controller
provides Short Circuit Protection (SCP) function. Since
short circuit may cause catastrophic damage over a very
short period, the SCP should be triggered with a very short
Figure 5. Output Voltage Setting
The output voltage can be set according to :
RFB1
RFB2
⎛
⎝
⎞
⎟
⎠
VOUT = VREF × 1 +
⎜
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RT8127
Output Inductor Selection
For a given output voltage sag specification, the ESR value
can be determined.Another parameter that has influence
on the output voltage sag is the equivalent series
inductance (ESL). The rapid change in load current results
in di/dt during transient. Therefore ESL contributes to part
of the voltage sag. Using a capacitor with low ESL will
obtain better transient performance. Generally, using
several capacitors connected in parallel will also have better
transient performance than just one single capacitor with
the same total ESR. Unlike electrolytic capacitors, the
ceramic capacitor has relatively low ESR and can reduce
the voltage deviation during load transient. However, the
ceramic capacitor can only provide low capacitance value.
Therefore, it is suggested to use a mixed combination of
electrolytic capacitor and ceramic capacitor for achieving
better transient performance.
Inductor plays an important role in the Buck converter
because the energy from the input power rail is stored in
it and then released to the load. From the viewpoint of
efficiency, the DC Resistance (DCR) of inductor should
be as small as possible because inductor carries current
all the time. Using inductor that has lowerDCR can obtain
higher efficiency. In addition, because inductor takes most
of the board space, its size is also important. Low profile
inductors can save board space especially when the height
has limitation. Additionally, larger inductance results in
lower ripple current, and therefore the lower power loss.
However, the inductor current rising time increases with
inductance value. This means the inductor will have a
longer charging time before its current reaches the required
output current. Since the response time is increased, the
transient response performance will be decreased.
Therefore, the inductor design is a trade-off between
performance, size and cost. In general, inductance is
designed such that the ripple current ranges between 20%
to 30% of full load current. The inductance can be
calculated by using the following equation :
MOSFET Selection
The majority of power loss in the step-down power
conversion is due to the loss in the power MOSFET(s).
For low voltage high current applications, the duty cycle
of the high side MOSFET is small. Therefore, the switching
loss of the high side MOSFET is of concern. Power
MOSFET(s) with lower total gate charge are preferred in
such kind of application. However, the small duty cycle
means the low side MOSFET is on for most of the switching
cycle. Therefore, the conduction loss tends to dominate
the total power loss of the converter. To improve the overall
efficiency, MOSFET(s) with low RDS(ON) are preferred in
the circuit design. In some cases, more than one MOSFET
are connected in parallel to further decrease the on-state
resistance. However, this depends on the low side
MOSFET driver capability and the budget.
V
IN − VOUT
VOUT
V
IN
L(MIN)
=
×
FSW ×k×IOUT_FullLoad
where k is 0.2 to 0.3.
Output Capacitor Selection
The output capacitor and the inductor form a low-pass filter
in the Buck topology. In steady state condition, the ripple
current flowing into/out of the capacitor results in voltage
ripple. The output voltage ripples contains two parts,
ΔVOUT_ESR and ΔVOUT_C
.
ΔVOUT_ESR = ΔIL ×ESR
1
Compensation Network Design
ΔVOUT_C = ΔIL ×
8×COUT ×fSW
The RT8127 is a voltage mode synchronous Buck
controller. To compensate a typical voltage mode Buck
converter, there are two ordinary compensation schemes,
well known as type-II compensator and type-III
compensator. The choice of using type-II or type-III
compensator will be up to platform designers, and the
main concern will be the position of the capacitor ESR
zero and mid-frequency to high frequency gain boost.
Typically, the ESR zero of output capacitor will tend to
When load transient occurs, the output capacitor supplies
the load current before controller can respond. Therefore,
the ESR will dominate the output voltage sag during load
transient. The output voltage sag can be calculated by
using the following equation :
VOUT_SAG = ESR x ΔIOUT
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DS8127-05 June 2014
RT8127
stabilize the effect of output LC double poles, hence the
position of the output capacitor ESR zero in frequency
domain may influence the design of voltage loop
compensation. If fZ(ESR) is <1/2fC, where fC denotes 0dB
crossing frequency, type-II compensation will be sufficient
for voltage stability. If fZ(ESR) is > 1/2fC (or higher gain and
phase margin is required at mid frequency to high
frequency), then type-III compensation may be a better
solution for voltage loop compensation.
the frequencies of poles and zero are :
1
f
Z1
=
2π ×R2×C1
f
P1
= 0
1
f
P2
=
C1×C2
C1 + C2
2π ×R2×
Determining the 0dB crossing frequency (fC, control loop
bandwidth) is the first step of compensator design. Usually,
the fC is set to 0.1 to 0.3 times of the switching frequency.
The second step is to calculate the open loop modulator
gain and find out the gain loss at fC. The third step is to
design a compensator gain that can compensate the
modulator gain loss at fC. The final step is to design fZ1
and fP2 to allow the loop sufficient phase margin. fZ1 is
designed to cancel one of the double-pole of modulator.
Usually, place fZ1 before fP(LC). fP2 is usually placed below
the switching frequency (typically, 0.5 to 1 times of the
switching frequency) to cancel high frequency noise.
The frequency of the double-pole is determined as follows.
1
f
=
P(LC)
2π L
×C
OUT
OUT
The frequency of the ESR zero is determined as follows.
1
f
=
Z(ESR)
2π ×C
×ESR
OUT
A typical type-II compensation network is shown in Figure
6.
C2
C1
R2
A typical type-III compensation contains two zeros and
two poles, where the extra one zero and one pole compared
with type-II compensation are added for stabilizing the
system when ESR zero is relatively far from LC double-
pole in frequency domain. Figure 8 and Figure 9 show the
R1
-
EA
+
+
V
REF
-
typical circuit and bode plot of the type-III compensation.
Figure 6. Type-II CompensationNetwork
C2
C3
C1
R3
R1
R2
After determining the phase margin at crossover
frequency, the position of zero and pole produced by type-
II compensation network, FZ1 and FP2, can then be
determined. The bode plot of type-II compensation is
shown in Figure 7.
-
EA
+
+
V
REF
-
Figure 8. Type-III CompensationNetwork
F
P1
F
P1
F
F
P2
Z1
Frequency (Hz)
Figure 7. Bode Plot of the Type-II Compensation
F
Z1
F
Z2
F
P2
F
P3
Frequency (Hz)
Figure 9. Bode Plot of the Type-III Compensation
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RT8127
A well-designed compensator regulates the output voltage
according to the reference voltage VREF with fast transient
response and good stability. In order to achieve fast
transient response and accurate output regulation, an
adequate compensator design is necessary. The goal of
the compensation network is to provide adequate phase
margin (usually greater than 45°) and the highest bandwidth
(0dB crossing frequency, fC) possible. It is also
recommended to manipulate the loop frequency response
such that its gain crosses 0dB with a slope of −20dB/
dec. According to Figure 9, the frequencies of poles and
zeros are :
For recommended operating condition specifications, the
maximum junction temperature is 125°C. The junction to
ambient thermal resistance, θJA, is layout dependent. For
WQFN-28L 4x4 package, the thermal resistance, θJA, is
52°C/W on a standard JEDEC 51-7 four-layer thermal test
board. The maximum power dissipation at TA = 25°C can
be calculated by the following formula :
PD(MAX) = (125°C − 25°C) / (52°C/W) = 1.923W for
WQFN-28L 4x4 package
The maximum power dissipation depends on the operating
ambient temperature for fixed TJ(MAX) and thermal
resistance, θJA. The derating curve in Figure 10 allows
the designer to see the effect of rising ambient temperature
on the maximum power dissipation.
1
f
=
=
Z1
Z2
2π ×R2×C1
1
f
2π × R1 + R3 ×C3
(
)
2.00
Four-Layer PCB
fP1 = 0
1
1.60
1.20
0.80
0.40
0.00
fP2
fP3
=
=
2π ×R3×C3
1
C1×C2
2π ×R2×
C1 + C2
Generally, fZ1 and fZ2 are designed to cancel the double-
pole of the modulator. Usually, place fZ1 at a fraction of
fP(LC), and place fZ2 at fP(LC). fP2 is usually placed at fZ(ESR)
to cancel the ESR zero, and fP3 is placed below the
switching frequency to cancel high frequency noise.
0
25
50
75
100
125
Ambient Temperature (°C)
Thermal Considerations
Figure 10.Derating Curve of Maximum Power
Dissipation
For continuous operation, do not exceed absolute
maximum junction temperature. The maximum power
dissipation depends on the thermal resistance of the IC
package, PCB layout, rate of surrounding airflow, and
difference between junction and ambient temperature. The
maximum power dissipation can be calculated by the
following formula :
PD(MAX) = (TJ(MAX) − TA) / θJA
where TJ(MAX) is the maximum junction temperature, TAis
the ambient temperature, and θJA is the junction to ambient
thermal resistance.
Copyright 2014 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
20
DS8127-05 June 2014
RT8127
Layout Consideration
Layout planning plays a critical role in modern high
frequency switching converter design. Circuit boards with
good layout can help the IC functions properly and achieve
low losses, low switching noise, and stable operation with
good performance. For the best performance of the
RT8127, the following PCB Layout guidelines must be
strictly followed.
` Place the filter capacitor close to the device pin, within
12mm (0.5 inch) if possible.
` Place the frequency setting resistor close to the IC
frequency setting pin.
` Place feedback and compensation circuits as close to
the device pin as possible.
` Keep current limit setting network as close as possible
to the IC. Routing of the network should avoid coupling
to high voltage switching node.
` Connections from the drivers to the respective gate of
the high side or the low side MOSFET should be as
short as possible to reduce stray inductance. Use
0.65mm (25 mils) or wider trace.
` All sensitive analog traces and components such as
VOUTx, FBx,GND, PGOODand VCC should be placed
away from high voltage switching nodes such as
PHASEx, LGATEx, UGATEx, or BOOTx nodes to avoid
coupling. Use internal layer(s) as ground plane(s) and
shield the feedback trace from power traces and
components.
` Gather ground terminal of VIN capacitor(s), VOUTx
capacitor(s), and source of low side MOSFETs as close
as possible. PCB trace defined as PHASEx node, which
connects to source of high side MOSFET, drain of low
side MOSFET and high voltage side of the inductor,
should be as short and wide as possible.
` Keep Channel 1 and Channel 2 network isolated to avoid
mutually noise coupling.
Copyright 2014 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
DS8127-05 June 2014
www.richtek.com
21
RT8127
Outline Dimension
D
D2
SEE DETAIL A
L
1
E
E2
1
2
1
2
DETAILA
e
b
Pin #1 ID and Tie Bar Mark Options
A
A3
Note : The configuration of the Pin #1 identifier is optional,
but must be located within the zone indicated.
A1
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
A1
A3
b
0.700
0.000
0.175
0.150
3.900
2.350
3.900
2.350
0.800
0.050
0.250
0.250
4.100
2.450
4.100
2.450
0.028
0.000
0.007
0.006
0.154
0.093
0.154
0.093
0.031
0.002
0.010
0.010
0.161
0.096
0.161
0.096
D
D2
E
E2
e
0.400
0.016
L
0.350
0.450
0.014
0.018
W-Type 28L QFN 4x4 Package
Richtek Technology Corporation
14F, No. 8, Tai Yuen 1st Street, Chupei City
Hsinchu, Taiwan, R.O.C.
Tel: (8863)5526789
Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should
obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot
assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be
accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries.
www.richtek.com
22
DS8127-05 June 2014
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