RT8127 [RICHTEK]

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RT8127
型号: RT8127
厂家: RICHTEK TECHNOLOGY CORPORATION    RICHTEK TECHNOLOGY CORPORATION
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®
RT8127  
High Efficiency Dual-Channel Output Synchronous Buck PWM  
Controller with Phase Interleaving and Two LDO Regulators  
General Description  
Features  
z Green Voltage Mode (GVMTM) Control  
The RT8127 is a high efficiency Dual-Channel output  
synchronous Buck PWM controller with integrated  
MOSFET drivers and two LDOs. This part featuresGreen  
Voltage Mode (GVMTM) control, which is specifically  
designed to improve efficiency at light load condition. At  
light load condition, the RT8127 is pin configurable to  
automatically operate in diode emulation mode with  
constant on-time PFM to reduce switching frequency so  
as to improve conversion efficiency. As the load current  
increases, the RT8127 leaves the diode emulation mode  
and operates in Continuous Conduction Mode (CCM) with  
fixed-frequency, 180° out of phase interleaved PWM to  
reduce input capacitance. The RT8127 supports 4.5V to  
26V input voltage range and has integrated 5V LDO which  
supplies the internal gate drivers as well as the controller.  
When channel 1 Buck regulator output voltage is higher  
than 5V, the supply voltage will be automatically switched  
to the Buck regulator output from the integrated 5V LDO.  
The RT8127 supports enable/disable function for each  
channel and also features external soft-start, adjustable  
switching frequency and power good indication. This device  
utilizes lossless inductor DCR current sensing for over  
current protection. Other protections include over voltage,  
under voltage, thermal shutdown and under voltage  
lockout.  
z High Light Load Efficiency  
z Audio-Skip Mode (ASM) at Light Load  
z Pin Configurable CCM/DEM Operation  
z 180° Interleaving PWM in CCM Operation  
z Support 4.5V to 26V Input Voltage Range  
z Integrated 5V MOSFET Driver and Bootstrap Circuit  
z Integrated 5V and 12V LDO  
z Enable Control for Each Channel  
z External/Internal Soft-Start  
z Programmable LGATE PWM Frequency Setting  
(LGFS)  
z Automatic Switchable 5V Regulator  
z Power Good Indication  
z VIN Feed-Forward in Control Loop  
z Lossless DCR Current Sensing  
z OVP, UVP, OCP, Thermal Shutdown and UVLO  
z Small 28-Lead WQFN Package  
z RoHS Compliant and Halogen Free  
Applications  
z Motherboard, Server,Graphic Card  
z System Power Supplies  
z Power Module  
Marking Information  
The RT8127 is available in a WQFN-28L4x4 small footprint  
package.  
0H= : Product Code  
YMDNN : Date Code  
0H=YM  
DNN  
Simplified Application Circuit  
V
IN  
RT8127  
V
IN  
VIN  
UGATE2  
PHASE2  
LGATE2  
UGATE1  
PHASE1  
LGATE1  
1.4µH  
1.4µH  
V
OUT2  
V
OUT1  
942µF  
942µF  
CSP2  
CSN2  
CSP1  
CSN1  
EN1/SS1  
EN2/SS2  
12VLDO  
12V/3.3V  
GND  
Copyright 2014 Richtek Technology Corporation. All rights reserved.  
©
is a registered trademark of Richtek Technology Corporation.  
DS8127-05 June 2014  
www.richtek.com  
1
RT8127  
Ordering Information  
RT8127  
Pin Configurations  
(TOP VIEW)  
Package Type  
QW : WQFN-28L 4x4 (W-Type)  
Lead Plating System  
G : Green (Halogen Free and Pb Free)  
28 27 26 25 24 23 22  
Note :  
1
2
3
4
5
6
7
21  
20  
19  
18  
17  
16  
15  
UGATE2  
BOOT2  
PHASE2  
LGATE2  
PGND2  
CSP2  
UGATE1  
BOOT1  
PHASE1  
LGATE1/RT  
PGND1  
CSP1  
Richtek products are :  
GND  
` RoHS compliant and compatible with the current require-  
ments of IPC/JEDEC J-STD-020.  
29  
CSN2  
CSN1  
` Suitable for use in SnPb or Pb-free soldering processes.  
8
9 10 11 12 13 14  
WQFN-28L 4x4  
Functional Pin Description  
Pin No.  
Pin Name  
Pin Function  
Channel 2 High Side MOSFET Floating Gate Driver Output. Connect this pin to the  
channel 2 high side MOSFET gate.  
1
UGATE2  
Channel 2 Bootstrap Flying Capacitor Connection Pin. This pin powers channel 2  
high side MOSFET driver. Connect this pin to PHASE2 with a ceramic capacitor.  
Channel 2 Switching Node Connection Pin. Connect this pin to the joint of high side  
MOSFET source and low side MOSFET drain, and the inductor of channel 2.  
2
3
4
BOOT2  
PHASE2  
LGATE2  
Channel 2 Low Side MOSFET Gate Driver Output. Connect this pin to the gate of  
channel 2 low side MOSFET.  
Power Ground of Channel 2. This pin is the return ground of channel 2 low side  
MOSFET gate driver. Connect this pin to the PCB ground plane layer with vias.  
5
PGND2  
6
7
CSP2  
CSN2  
Positive Current Sense Input for Channel 2.  
Negative Current Sense Input for Channel 2.  
Channel 2 Regulator Output Voltage Feedback Pin. This pin is the inverting input  
node of the error amplifier.  
8
9
FB2  
COMP2  
Channel 2 Regulator Compensation Pin. This pin is the output of the error amplifier.  
Channel 2 Enable Pin. Pull this pin to ground to disable channel 2. This pin is  
internally pulled high. Leave this pin unconnected to enable channel 2 with default  
soft-start time. This pin can also be used for external soft-start interval setting.  
Connect a ceramic capacitor to this pin to extend soft-start time.  
The input voltage at EN2/SS2 pin must be higher than 2.97V to make sure soft-start  
can be finished and PGOOD assertion.  
10  
11  
12  
EN2/SS2  
PGOOD  
EN1/SS1  
Power Good Indicator Output. This pin has an open drain structure. Pull this pin high  
to a voltage source with a resistor.  
Channel 1 Enable Pin. Pull this pin to ground to disable channel 1. This pin is  
internally pulled high. Leave this pin unconnected to enable channel 1 with default  
soft-start time. This pin can also be used for external soft-start interval setting.  
Connect a ceramic capacitor to this pin to extend soft-start time.  
The input voltage at EN1/SS1 pin must be higher than 2.97V to make sure soft-start  
can be finished and PGOOD assertion.  
Copyright 2014 Richtek Technology Corporation. All rights reserved.  
©
is a registered trademark of Richtek Technology Corporation.  
www.richtek.com  
2
DS8127-05 June 2014  
RT8127  
Pin No.  
Pin Name  
Pin Function  
Channel 1 Regulator Compensation Pin. This pin is the output of the error  
amplifier.  
13  
COMP1  
Channel 1 Regulator Output Voltage Feedback Pin. This pin is the inverting  
input node of the error amplifier.  
14  
FB1  
15  
16  
CSN1  
CSP1  
Negative Current Sense Input for Channel 1.  
Positive Current Sense Input for Channel 1.  
Power Ground of Channel 1. This pin is the return ground of channel 1 low  
side MOSFET gate driver. Connect this pin to the PCB ground plane layer  
with vias.  
17  
18  
19  
PGND1  
Channel 1 Low Side MOSFET Gate Driver Output. Connect this pin to the  
gate of channel 1 low side MOSFET. This pin is also used to set the PWM  
switching frequency in CCM. Connect a resistor from this pin to GND to set  
the PWM switching frequency.  
LGATE1/RT  
PHASE1  
Channel 1 Switching Node Connection Pin. Connect this pin to the joint of  
high side MOSFET source and low side MOSFET drain, and the inductor of  
channel 1.  
Channel 1 Bootstrap Flying Capacitor Connection Pin. This pin powers  
channel 1 high side MOSFET driver. Connect this pin to PHASE1 with a  
ceramic capacitor.  
20  
21  
22  
BOOT1  
UGATE1  
VIN  
Channel 1 High Side MOSFET Floating Gate Driver Output. Connect this pin  
to the gate of channel 1 high side MOSFET.  
IC Power Supply Input. Connect this pin to a voltage source with a bypass  
ceramic capacitor connected to GND for noise decoupling. This pin is the  
power source of the two integrated LDOs.  
12V LDO Output. It is recommended to connect a minimum 1μF ceramic  
capacitor from this pin to GND.  
23  
24  
12VLDO  
12VLDOEN  
12V LDO Enable Pin. Logic-high at this pin enables the integrated 12V LDO.  
CCM/DEM Programming Pin. Voltage at this pin determines the operation  
mode in each channel.  
Connect this pin to GND : both of the channels are set to automatic CCM/DEM  
transition operation with audio-skip operation in DEM.  
Connect this pin to VCC : both of the channels are set to CCM operation.  
Leave this pin floating : channel 1 is set to automatic CCM/DEM transition  
operation with audio-skip operation in DEM and channel 2 is set to CCM  
operation.  
25  
SKIP  
26  
27  
LDOEN  
VCC  
5V LDO Enable Pin. Logic-high at this pin enables the integrated 5V LDO.  
Integrated 5V LDO Output. It is recommended to connect a minimum 4.7μF  
ceramic capacitor between this pin and ground. VCC is the power supply for  
the control circuit and MOSFET drivers.  
5V LDO Bypass Input. Connect this pin to channel 1 regulator output (usually  
5V). The LDOBYP pin voltage, VLDOBYP, is monitored for controller supply  
power swap. When VLDOBYP is higher than the threshold, the controller will  
automatically switch the chip power supply from 5V LDO to channel 1 output  
and disable the 5V LDO for power saving.  
28  
LDOBYP  
Return Ground of Controller. The exposed pad must be soldered to a large  
PCB and connected to ground plane for maximum power dissipation.  
29 (Exposed Pad) GND  
Copyright 2014 Richtek Technology Corporation. All rights reserved.  
©
is a registered trademark of Richtek Technology Corporation.  
DS8127-05 June 2014  
www.richtek.com  
3
RT8127  
Function Block Diagram  
BOOT2  
UGATE2  
PHASE2  
BOOT1  
UGATE1  
PHASE1  
PWM  
Controller  
PWM  
Controller  
LGATE1/RT  
PGND1  
LGATE2  
0 °  
180 °  
PGND2  
12VLDO  
12VLDOEN  
OSC  
GND  
12VLDO  
5VLDO  
VIN  
GVM CTL  
V
TH_LDOBYP  
Operation  
The RT8127 is a dual output voltage mode synchronous  
Buck controller with integrated MOSFET drivers and two  
LDOs. The 12VLDO output also can be stepped down to  
3.3V by the controlling of 12VLDOEN pin.  
Over Current Protection (OCP)  
The over current protection is triggered if the voltage  
difference between CSPx and CSNx over 40mV for 16  
switching cycles. Both UGATEx and LGATEx will go low  
until VCC is resupplied and exceeds the POR rising  
threshold voltage.  
The controller has a fixed frequency control with 180° phase  
shift in CCM. The fixed frequency can be adjusted from  
typical 300kHz to 600kHz.  
Over Voltage Protection (OVP)  
The controller supports dynamic mode transition function  
with three operating states : forced CCM,Diode Emulation  
Mode (DEM) and audio skipping modes at light load.  
If the FBx voltage is higher than the OVP threshold  
(typically 120% x VREF) during normal operation, OVP  
will be triggered. When OVP is triggered, UGATEx goes  
low and LGATEx is forced to high.  
Enable  
The recommended ON / OFF control can tie the ENx to  
GND with a switch.  
Under Voltage Protection (UVP)  
If the FBx voltage is lower than the UVP threshold  
(typically 50% x VREF) during normal operation, UVP will  
be triggered. When UVP is triggered, both UGATEx and  
LGATEx go low until VCC is resupplied and exceeds the  
POR rising threshold voltage.  
Under Voltage Lockout (UVLO)  
During normal operation, if the voltage at the VCC pin  
drops below UVLO falling edge threshold. The VCC UVLO  
circuitry inhibits switching by keeping UGATEx and  
LGATEx low.  
Copyright 2014 Richtek Technology Corporation. All rights reserved.  
©
is a registered trademark of Richtek Technology Corporation.  
www.richtek.com  
4
DS8127-05 June 2014  
RT8127  
PGOOD  
PGOOD is actively held low in soft-start, standby, and  
shutdown conditions. It is released when both output  
voltages of VFB1 and VFB2 are within 20% of the nominal  
regulation point.  
LDOBYP  
When VLDOBYP is higher than the threshold, the controller  
will automatically switch the chip power supply from 5V  
LDO to channel 1 output and disable the 5V LDO for power  
saving.  
Soft-Start  
An internal current source charges the internal soft-start  
capacitor such that the internal soft-start voltage ramps  
up uniformly. The FB voltage will track the internal soft-  
start voltage during the soft-start interval.  
The RT8127 also provides an external soft-start function.  
An additional capacitor connected at SSx pin will be  
charged by a 10μA current source and determines the  
soft-start time.  
Copyright 2014 Richtek Technology Corporation. All rights reserved.  
©
is a registered trademark of Richtek Technology Corporation.  
DS8127-05 June 2014  
www.richtek.com  
5
RT8127  
Absolute Maximum Ratings (Note 1)  
z Supply Voltage, VIN --------------------------------------------------------------------------------- 0.3V to 30V  
z VCC, PVCC, LDOBYP------------------------------------------------------------------------------ 0.3V to 6V  
z PGOOD ------------------------------------------------------------------------------------------------- 0.3V to 6V  
z LDOEN -------------------------------------------------------------------------------------------------- 0.3V to 30V  
z BOOT to PHASE ------------------------------------------------------------------------------------- 0.3V to 6V  
z PHASE to GND  
DC-------------------------------------------------------------------------------------------------------- 0.7V to (VIN + 0.3V)  
<20ns --------------------------------------------------------------------------------------------------- 5V to 30V  
<10ns --------------------------------------------------------------------------------------------------- 10V to 30V  
<5ns ----------------------------------------------------------------------------------------------------- 15V to 30V  
z UGATE toGND  
DC-------------------------------------------------------------------------------------------------------- (VPHASE 0.3V) to (VBOOT + 0.3V)  
<20ns --------------------------------------------------------------------------------------------------- (VPHASE 5V) to (VBOOT + 5V)  
z LGATE toGND  
DC-------------------------------------------------------------------------------------------------------- (GND 0.3V) to (VCC + 0.3V)  
<20ns --------------------------------------------------------------------------------------------------- (GND 5V) to (VCC + 5V)  
z Other Pins---------------------------------------------------------------------------------------------- (GND 0.3V) to 6V  
z Power Dissipation, PD @ TA = 25°C  
WQFN-28L 4x4 --------------------------------------------------------------------------------------- 1.923W  
z Package Thermal Resistance (Note 2)  
WQFN-28L 4x4, θJA ---------------------------------------------------------------------------------- 52°C/W  
WQFN-28L 4x4, θJC --------------------------------------------------------------------------------------------------------------------- 7°C/W  
z Junction Temperature -------------------------------------------------------------------------------- 150°C  
z Lead Temperature (Soldering, 10 sec.)---------------------------------------------------------- 260°C  
z Storage Temperature Range ----------------------------------------------------------------------- 65°C to 150°C  
z ESD Susceptibility (Note 3)  
HBM (Human Body Model)------------------------------------------------------------------------- 2kV  
Recommended Operating Conditions (Note 4)  
z Supply Voltage, VIN --------------------------------------------------------------------------------- 4.5V to 26V  
z Junction Temperature Range----------------------------------------------------------------------- 40°C to 125°C  
z Ambient Temperature Range----------------------------------------------------------------------- 40°C to 85°C  
Electrical Characteristics  
(VIN = 12V, VCC = 5V, TA = 25°C, unless otherwise specified)  
Parameter  
General  
Symbol  
Test Conditions  
Min  
Typ Max Unit  
VIN Supply Voltage  
VIN Supply Current  
VCC Power On Reset  
VCC POR Hysteresis  
VIN  
4.5  
--  
12  
2
26  
--  
V
mA  
V
IVIN  
VPOR  
ΔVPOR  
--  
4.2  
0.3  
--  
--  
--  
V
Copyright 2014 Richtek Technology Corporation. All rights reserved.  
©
is a registered trademark of Richtek Technology Corporation.  
www.richtek.com  
6
DS8127-05 June 2014  
RT8127  
Parameter  
Symbol  
Test Conditions  
Min Typ Max Unit  
EN1, EN2, LDOEN, 12VLDOEN = 0V  
--  
--  
5
Shutdown Current  
I
I
μA  
μA  
VIN_SHDN  
EN1, EN2, LDOEN = 0V,  
12VLDOEN = 5V / 2.5V  
--  
100  
150  
EN1, EN2 = 0V, LDOEN = 5V,  
12VLDOEN = 5V / 2.5V  
EN1, EN2 = 0V, LDOEN = 5V,  
12VLDOEN = 0V  
--  
--  
350  
300  
400  
350  
Standby Current  
VIN_SBY  
5V LDO  
Output Voltage  
Regulation  
V
V
= 12V, Load Current = 100mA  
4.9  
60  
5
5.15  
--  
V
CC  
IN  
Current Capability  
LDOBYP  
I
--  
mA  
VCC_SRC  
LDOBYP Threshold  
LDOBYP Hysteresis  
V
4.8  
--  
4.9  
0.1  
5
V
V
TH_LDOBYP  
ΔV  
0.25  
TH_LDOBYP  
LDOBYP Internal Switch  
On-Resistance  
R
--  
--  
1
Ω
LDOBYP  
12V LDO  
Source Current Capability I  
10  
--  
--  
mA  
V
12VLDO  
Voltage Regulation for  
12V Output  
V
V
V
= 15V, Load Current = 10mA  
= 15V, Load Current = 10mA  
11.4  
12  
12.6  
12VLDO  
3.3VLDO  
IN  
IN  
Voltage Regulation for  
3.3V Output  
V
3.1  
3.3  
3.5  
V
Enable Control  
EN1/EN2 Threshold  
EN1/EN2 Hysteresis  
LDOEN Threshold  
LDOEN Hysteresis  
V
0.58 0.68 0.78  
V
mV  
V
EN  
ΔV  
--  
1.4  
--  
78  
1.6  
0.2  
--  
1.8  
--  
EN  
V
TH_LDOEN  
ΔV  
V
TH_LDOEN  
12VLDOEN Input for 3.3V  
Output  
V
12VLDO Output = 3.3V  
12VLDO Output = 12V  
2
2.5  
3
V
TH_12VLDOEN_3.3V  
12VLDOEN Input for 12V  
Output  
V
V
4.5  
--  
5
5.5  
0.4  
V
V
TH_12VLDOEN_12V  
TH_12VLDOEN  
12VLDOEN Disable  
PGOOD  
--  
PGOOD Threshold  
Error Amplifier  
Open Loop Gain  
Gain Bandwidth  
Slew Rate  
V
With Respect to V  
80  
--  
120  
%
PGOOD  
OL  
REF  
A
(Note 5)  
(Note 5)  
--  
--  
--  
80  
15  
2
--  
--  
--  
dB  
GBW  
SR  
MHz  
V/μs  
COMP Pin to GND with 10pF  
Reference Voltage  
Reference Voltage  
V
792  
800  
808  
mV  
REF  
Copyright 2014 Richtek Technology Corporation. All rights reserved.  
©
is a registered trademark of Richtek Technology Corporation.  
DS8127-05 June 2014  
www.richtek.com  
7
RT8127  
Parameter  
Symbol  
Test Conditions  
Min  
Typ Max Unit  
PWM Controller  
R
R
R
R
= 1.8k  
255  
297  
340  
510  
80  
300  
350  
400  
600  
--  
345  
402  
460  
690  
--  
LGFS  
LGFS  
LGFS  
LGFS  
= 4.7k  
= 9.1k  
= 16k  
Switching Frequency  
f
kHz  
SW  
Maximum Duty Cycle  
Ramp Amplitude  
D
%
V
MAX  
ΔV  
V
= 12V  
IN  
--  
2.4  
0.8  
180  
--  
OSC  
Ramp Valley  
V
--  
--  
V
RAMPOFS  
PWM Clock Interleaving  
MOSFET Driver  
CCM Operation  
(Note 5)  
--  
--  
Deg  
UGATE Driver Source  
UGATE Driver Sink  
LGATE Driver Source  
LGATE Driver Sink  
R
R
R
R
V
V = 5V  
PHASE  
--  
--  
--  
--  
2.5  
1.5  
2
--  
--  
--  
--  
Ω
Ω
Ω
Ω
UGATEsr  
UGATEsk  
LGATEsr  
LGATEsk  
BOOT  
1
Deadtime between UGATE Off  
and LGATE On  
Deadtime between LGATE Off  
and UGATE On  
CCM Operation  
CCM Operation  
Current = 10mA  
--  
--  
--  
40  
20  
--  
--  
--  
ns  
ns  
V
Embedded Bootstrap Diode  
Voltage Drop  
V
0.8  
DROP  
Soft-Start  
Internal Soft-Start Time  
t
6
9
--  
ms  
SS  
Enabled when EN = L, measure  
CSN1/CSN2 resistance  
Soft-Stop Resistance  
R
--  
--  
80  
Ω
PL  
SKIP Pin  
Logic-High  
SKIP Input  
V
V
CH1 and CH2 : CCM  
3.6  
--  
--  
--  
--  
IH  
IL  
V
Threshold Voltage  
Logic-Low  
CH1 and CH2 : Automatic CCM/DEM  
1.4  
Audio Skip Mode PWM  
Frequency  
f
--  
30  
--  
kHz  
SW_ASM  
Protection  
Over Voltage Protection  
Under Voltage Protection  
UVP Delay  
V
V
After VCC POR, with Respect to V  
110  
--  
120  
50  
2
130  
--  
%
%
OVP  
UVP  
REF  
After Soft-Start, with Respect to V  
REF  
t
1.4  
35  
--  
ms  
mV  
D_UVP  
OCP Threshold Voltage  
V
Measure V  
Measure V  
V  
V  
40  
45  
OCP  
SCP  
ISP  
ISP  
ISN  
ISN  
Short Circuit OCP Threshold  
Voltage  
V
--  
60  
--  
mV  
Thermal Shutdown Temperature T  
--  
--  
150  
40  
--  
--  
°C  
°C  
SD  
SD  
Thermal Shutdown Hysteresis  
ΔT  
Copyright 2014 Richtek Technology Corporation. All rights reserved.  
©
is a registered trademark of Richtek Technology Corporation.  
www.richtek.com  
8
DS8127-05 June 2014  
RT8127  
Note 1. Stresses beyond those listed Absolute Maximum Ratingsmay cause permanent damage to the device. These are  
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in  
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may  
affect device reliability.  
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is  
measured at the exposed pad of the package.  
Note 3. Devices are ESD sensitive. Handling precaution is recommended.  
Note 4. The device is not guaranteed to function outside its operating conditions.  
Note 5. Guaranteed by design.  
Copyright 2014 Richtek Technology Corporation. All rights reserved.  
©
is a registered trademark of Richtek Technology Corporation.  
DS8127-05 June 2014  
www.richtek.com  
9
RT8127  
Typical Application Circuit  
V
IN  
C1  
270µF  
C2  
0.1µF  
R29  
10  
RT8127  
BOOT1  
R1  
0.5  
20  
21  
C5  
22  
VIN  
0.1µF  
C14  
1µF  
R2  
0.5  
R15  
10k  
NTMFS4  
921NT1G  
R17  
30k  
V
UGATE1  
OUT1  
5V  
26  
L1  
1.4µH  
Q1  
Q2  
LDOEN  
19  
18  
PHASE1  
24  
C4  
C3  
12VLDOEN  
LGATE1/RT  
NTMFS4  
936NT1G  
optional  
R
NTC1  
R3  
2.2  
10k  
R16  
6.8k 11k  
R18  
22µF  
940µF  
NC  
R5  
C7  
2.2nF  
R
1.8k  
LGFS  
R19  
R6 10k  
0.1µF  
0
2
1
BOOT2  
C16  
C6  
C17  
R4 68k  
16  
15  
C15  
0.1µF  
CSP1  
CSN1  
10µF  
270µF  
Q3  
V
OUT2  
3.3V  
UGATE2  
R7  
C8  
0.1µF  
NTMFS4  
921NT1G  
C11  
820  
R20  
C9 120pF  
6.8nF  
L2  
0
1.4µH  
3
4
13  
14  
COMP1  
FB1  
PHASE2  
LGATE2  
R9  
C10  
6.2k  
R8 27k  
1nF  
optional  
R
NTC2  
10k  
R21  
2.2  
Q4  
C21  
22µF  
R14  
1.2k  
NC  
NTMFS4  
936NT1G  
C18  
2.2nF  
R13  
10  
R22 R23  
10k  
28  
27  
C20  
LDOBYP  
VCC  
0.8k  
R24  
C12  
0.1µF  
6
7
C19 0.1µF  
940µF  
CSP2  
CSN2  
C13  
4.7µF  
R10  
30k  
C25  
6.8nF  
C23  
120pF  
11  
25  
R25 820  
C24  
C22  
0.1µF  
PGOOD  
PGOOD  
R28  
27k  
R26  
9
8
R11  
COMP2  
FB2  
0
6.2k  
1nF  
SKIP  
R27  
1.96k  
R12  
NC  
5
PGND2  
PGND1  
12  
10  
EN1/SS1  
EN2/SS2  
17  
Q5  
Q6  
C26  
NC  
CH1 Enable  
CH2 Enable  
23  
12VLDO  
GND  
12V/3.3V  
29 (Exposed Pad)  
C27  
NC  
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10  
DS8127-05 June 2014  
RT8127  
Typical Operating Characteristics  
Efficiency vs. Load Current  
Efficiency vs. Load Current  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
VIN = 12V, VCC = 5V, VOUT = 5V,  
EN1 = EN2 = 12VLDOEN  
= LDOEN = ON  
80  
VIN = 19V, VCC = 5V, VOUT = 5V,  
EN1 = EN2 = 12VLDOEN  
= LDOEN = ON  
90  
70  
60  
AUTO SKIP  
AUTO SKIP  
FCCM  
FCCM  
50  
40  
30  
20  
10  
0
0.001  
0.01  
0.1  
1
10  
100  
0.001  
0.01  
0.1  
1
10  
100  
100  
100  
Load Current (A)  
Load Current (A)  
Efficiency vs. Load Current  
Efficiency vs. Load Current  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VIN = 24V, VCC = 5V, VOUT = 5V,  
EN1 = EN2 = 12VLDOEN  
= LDOEN = ON  
VIN = 12V, VCC = 5V, VOUT = 3.3V,  
EN1 = EN2 = 12VLDOEN  
= LDOEN = ON  
AUTO SKIP  
AUTO SKIP  
FCCM  
FCCM  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
100  
Load Current (A)  
Load Current (A)  
Efficiency vs. Load Current  
Efficiency vs. Load Current  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VIN = 19V, VCC = 5V, VOUT = 3.3V,  
EN1 = EN2 = 12VLDOEN  
= LDOEN = ON  
VIN = 24V, VCC = 5V, VOUT = 3.3V,  
EN1 = EN2 = 12VLDOEN  
= LDOEN = ON  
AUTO SKIP  
AUTO SKIP  
FCCM  
FCCM  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
100  
Load Current (A)  
Load Current (A)  
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11  
RT8127  
Shutdown Response  
Power Up  
VOUT1  
VOUT1  
(5V/Div)  
PGOOD  
(5V/Div)  
(5V/Div)  
PGOOD  
(5V/Div)  
EN1  
EN1  
(5V/Div)  
(5V/Div)  
UGATE1  
(10V/Div)  
UGATE1  
(10V/Div)  
VIN = 12V, VCC = 5V  
VIN = 12V, VCC = 5V  
Time (10ms/Div)  
Time (1ms/Div)  
VOUT1 Load Transient Response  
VOUT2 Load Transient Response  
VOUT2  
VOUT1  
(50mV/Div)  
(50mV/Div)  
Inductor  
Current  
(10A/Div)  
Inductor  
Current  
(10A/Div)  
LGATE2  
(10V/Div)  
LGATE1  
(10V/Div)  
UGATE2  
(20V/Div)  
UGATE1  
(20V/Div)  
VIN = 12V, VCC = 5V, VOUT = 3.3V, Load = 0 to 5A  
VIN = 12V, VCC = 5V, VOUT = 5V, Load = 0 to 5A  
Time (100μs/Div)  
Time (100μs/Div)  
OCP  
Shorted Start Up  
VOUT2  
(1V/Div)  
VOUT1  
(5V/Div)  
Inductor  
Current  
(20A/Div)  
Inductor  
Current  
(20A/Div)  
LGATE2  
(5V/Div)  
LGATE1  
(5V/Div)  
UGATE1  
(20V/Div)  
UGATE2  
(10V/Div)  
VIN = 12V, VCC = 5V  
VIN = 12V, VCC = 5V  
Time (10μs/Div)  
Time (200μs/Div)  
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DS8127-05 June 2014  
RT8127  
OVP  
UVP  
VOUT1  
(2V/Div)  
FB2  
(500mV/Div)  
PGOOD  
Inductor  
Current  
(5A/Div)  
(5V/Div)  
LGATE1  
(5V/Div)  
LGATE2  
(5V/Div)  
UGATE1  
(10V/Div)  
UGATE2  
(10V/Div)  
VIN = 12V, VCC = 5V  
VIN = 12V, VCC = 5V  
Time (50μs/Div)  
Time (10μs/Div)  
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13  
RT8127  
Application Information  
The RT8127 is a dual output voltage mode synchronous  
Buck controller with integrated MOSFET drivers and two  
LDOs. It is suited to 5V/3.3V low voltage power supplies  
with demanding high efficiency and fast transient response,  
such as graphic card and motherboard. The internal linear  
regulators named 5VLDO and 12VLDO respectively  
provides 5V and 12V outputs. The internal circuitry and  
gate drivers can be supplied by the 5VLDO or the output  
of 5V channel. When the output voltage of 5V channel is  
above 4.85V, the 5VLDO will be turned off and the device  
is supplied by the output of 5V channel.  
inductor free wheeling current becomes negative. As the  
load current is further decreased, it takes longer and longer  
time to discharge the output capacitor to the level that  
requires the next ONcycle. In reverse, when the output  
current increases from light load to heavy load, the  
switching frequency increases to the preset value as the  
inductor current reaches the continuous conduction.  
The transition load point to the light load operation is shown  
in Figure 1 and can be calculated as follows :  
I
L
Slope = (V - V  
) / L  
IN  
OUT  
I
L, peak  
The RT8127 supports dynamic mode transition function  
with three operating states: forced CCM,Diode Emulation  
Mode (DEM) and audio skipping modes at light load. These  
different operating states improve the system efficiency  
as high as possible. The RT8127 has a fixed frequency  
control with 180°phase shift in CCM. The fixed frequency  
can be adjusted from typical 300kHz to 600kHz by the  
I
= I  
/ 2  
Load  
L, peak  
0
t
ON  
external resistor RLGFS  
.
Figure 1. Boundary of Inductor current betweenDEM  
and CCM  
Operation Mode Selection  
V
V  
OUT  
2L  
(
)
× t  
IN  
The SKIP pin is used to select the operation mode. When  
the SKIP pin is tied to VCC, both of the channels operate  
in forced-CCM mode. When the SKIP pin is connected to  
GND, both of the channels operate in automatic CCM/  
DEM and transition operation with audio-skip mode inDEM.  
When the SKIP pin is floating, channel 1 operates in  
automatic CCM/DEM and transition operation with audio-  
skip mode inDEM, and channel 2 operates in forced-CCM  
mode.  
I
Load (SKIP)  
ON  
where tON is the on-time.  
Audio Skip Mode  
The RT8127 activates a unique type of Diode Emulation  
Mode with a minimum switching frequency of 30kHz,  
called Audio Skip Mode. This mode eliminates audio-  
frequency modulation that would otherwise be present  
when a lightly loaded controller automatically skips  
pulses. In Audio Skip Mode, the low side switch gate  
driver signal is ORed with an internal oscillator  
(>30kHz). Once the internal oscillator is triggered, the  
ultrasonic controller pulls LGATEx high and turns on the  
low side MOSFET to induce a negative inductor current.  
After the output voltage falls below the reference voltage,  
the controller turns off the low side MOSFET (LGATEx  
pulled low) and triggers a constant on-time (UGATEx driven  
high). When the on-time has expired, the controller re-  
enables the low side MOSFET until the controller detects  
that the inductor current dropped below the zero crossing  
threshold.  
Diode-Emulation Mode  
In Diode Emulation Mode, the RT8127 automatically  
reduces switching frequency at light load conditions to  
maintain high efficiency. This reduction of frequency is  
achieved smoothly. As the output current decreases from  
heavy-load condition, the inductor current is also reduced,  
and eventually comes to the point that its current valley  
touches zero, which is the boundary between continuous  
conduction and discontinuous conduction modes. By  
emulating the behavior of diodes, the low side MOSFET  
allows only partial negative current to flow when the  
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14  
DS8127-05 June 2014  
RT8127  
Forced-CCM Mode  
start function will be chosen. The external soft-start  
sequence is shown in Figure 2. During soft-start period,  
the FB voltage will track the reference voltage VREF which  
slew rate is according to the slew rate of the ENx pin  
voltage.During shut down period, the FB voltage also tracks  
reference voltage which slew rate is according to the ENx  
pin voltage.  
The low noise, forced-CCM mode (SKIP = VCC) disables  
the zero-crossing comparator, which controls the low side  
switch on-time. This causes the low side gate-driver  
waveform to become the complement of the high side  
gate-driver waveform. This in turn causes the inductor  
current to reverse at light loads as the PWM loop strives  
to maintain a duty ratio of VOUT/VIN. The benefit of forced-  
CCM mode is to keep the switching frequency fairly  
constant, but it comes at a cost : The no-load current will  
slightly increase, depending on the external MOSFET(s),  
reference and linear regulators.  
In order to prevent LGATEx turn on for a long time to induce  
violent inductor current in shutdown interval, the falling  
slew rate of the ENx pin voltage should not slower than  
1V/μs and the recommended inductor should be higher  
than 1μH.  
The recommended ON / OFF control is to connect the  
ENx to GND with a MOSFET. If the external source is  
directly connected to the ENx pin to control ON / OFF,  
the external source must be higher than 2.97V to make  
sure soft-start can be finished and PGOOD assertion.  
MOSFET Gate Driver  
The high side driver is designed to drive high current, low  
RDS(on) N-MOSFET(s). When configured as a floating  
driver, 5V bias voltage is delivered from 5VLDO supply.  
The average drive current is also calculated by the gate  
charge at VGS = 5V times switching frequency. The  
instantaneous drive current is supplied by the flying  
capacitor between BOOTx and PHASEx pins.Adead time  
to prevent shoot through is internally generated between  
high side MOSFET off to low side MOSFET on, and low  
side MOSFET off to high side MOSFET on. The low side  
driver is designed to drive high current low RDS(on)  
N-MOSFET(s). The internal pull-down transistor that drives  
LGATEx low is robust, with a 0.6Ω typical on resistance.  
A 5V bias voltage is delivered from 5VLDO supply. For  
high current applications, some combinations of high and  
low side MOSFET(s) may cause excessive gate-drain  
coupling, which can lead to efficiency-killing and EMI  
producing shoot-through currents. This is often remedied  
by adding a resistor in series with BOOTx, which increases  
the turn-on time of the high side MOSFET without degrading  
the turn-off time.  
When LDOEN is Low, both VOUT1 and VOUT2 will shut  
down even though EN1 or EN2 are ON state. When LDOEN  
is ON state, VOUT1 and VOUT2 are controlled  
independently by EN1 and EN2. The 12VLDO stays alive  
only consider if 12VLDOEN is ON state.  
2.97  
1.6  
1.6  
0.8  
0.8  
EN shutdown  
threshold  
ENx  
0
0.8  
V
Slew rate is controlled  
by ENx pin voltage  
REF  
V
REF  
0
SSOK  
PGOOD  
UGATEx  
LGATEx  
FCCM  
Enable  
UGATEx  
LGATEx  
DEM  
with  
ASM  
The RT8127 provides external soft-start function and  
enables control through the ENx pin.  
Soft-Start  
Ultrasonic Mode  
(Load Current Dependent)  
The internal soft-start function or external soft-start function  
will be chosen according to the slew rate of the ENx pin  
voltage. If the slew rate of ENx pin voltage is slower than  
the slew rate of internal soft-start ramp, the external soft-  
Figure 2. External Soft-Start Sequence  
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15  
RT8127  
Table1. Enable Logic States  
12VLDOEN  
5VLDOEN  
EN1  
EN2  
12VLDO 5VLDO  
VOUT1  
OFF  
OFF  
OFF  
ON  
VOUT2  
OFF  
OFF  
OFF  
OFF  
ON  
L
L
L
X(don’t care)  
X(don’t care)  
OFF  
OFF  
OFF  
ON  
H
X(don’t care)  
X(don’t care)  
ON  
L/H  
L/H  
L/H  
L/H  
H
H
H
H
L
H
L
L
L
OFF/ON  
OFF/ON  
OFF/ON  
OFF/ON  
ON  
H
H
ON  
OFF  
ON  
H
ON  
ON  
Soft-Start  
Supply Voltage and Power On Reset (POR)  
The RT8127 provides an internal soft-start function. The  
soft-start function is used to prevent large inrush current  
and output voltage overshoot while the converter is being  
powered up. The soft-start function automatically begins  
once the chip is enabled. An internal current source  
charges the internal soft-start capacitor such that the  
internal soft-start voltage ramps up uniformly. The FB  
voltage will track the internal soft-start voltage during the  
soft-start interval. The PWM pulse width increases  
gradually to limit the input current. After the internal soft-  
start voltage exceeds the reference voltage, the FB voltage  
no longer tracks the soft-start voltage but rather follows  
the reference voltage. Therefore, the duty cycle of the  
UGATE signal as well as the input current at power up are  
limited.  
VCC is the power supply for the control circuit and  
MOSFET driver. An internal linear regulator regulates the  
supply voltage for internal control logic circuit. Aminimum  
0.1μF ceramic capacitor is recommended to bypass the  
supply voltage. Place the bypassing capacitor physically  
near the IC. VCC also supplies the integrated MOSFET  
drivers. A bootstrap diode is embedded to facilitate PCB  
design and reduce the total BOM cost. No external  
Schottky diode is required in real applications. The Power  
On Reset (POR) circuit monitors the supply voltage at  
the VCC pin. If VCC exceeds the POR rising threshold  
voltage (typ. 4.2V), the controller resets and prepares the  
PWM for operation. If VCC falls below the POR falling  
threshold during normal operation, all MOSFET(s) stop  
switching. The POR rising and falling threshold has a  
hysteresis (typ. 0.3V) to prevent unintentional noise based  
reset.  
The RT8127 also provides a proximate external soft-start  
function shown in Figure 3. An additional capacitor  
connected from ENx/SSx pin to the GND will be charged  
by a 10μA current source and determines the soft-start  
time.  
Low Dropout Regulators (LDOx)  
The RT8127 includes 5V and 12V low dropout regulators.  
The 5V regulator can supply up to 60mAfor external loads.  
Bypass LDOx with a minimum 1μF ceramic capacitor.  
When the output voltage of 5V channel is higher than the  
switch over threshold (4.85V), an internal 1Ω P-MOSFET  
switch connects LDOBYP to the 5VLDO pin while  
simultaneously disconnects the internal linear regulator.  
ΔV  
ENx  
VOUTx  
Soft-Start time  
The 12VLDO output can be stepped down to 3.3V by  
connecting 12VLDOEN pin to 2V to 3V.  
Figure 3. External Soft-Start  
The soft-start time can be calculated as :  
C×ΔV  
I
SS  
(
)
Under Voltage Lockout (UVLO)  
t
=
SS  
During normal operation, if the voltage at the VCC pin  
drops below UVLO falling edge threshold.  
Where, ISS = 10μA, ΔV = 1V, and C is the external capacitor  
placed from ENx/SSx to GND. The recommend C is  
0.15μF to 0.2μF.  
The VCC Under Voltage Lockout (UVLO) circuitry inhibits  
switching by keeping UGATEx and LGATEx low.  
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16  
DS8127-05 June 2014  
RT8127  
Power Good Output (PGOOD)  
delay and latched. Also to prevent false triggering, the  
SCP threshold is designed to be 1.5 times of OCP  
threshold.  
PGOOD is an open-drain output and requires a pull up  
resistor. PGOODis actively held low in soft-start, standby,  
and shutdown. It is released when both output voltages  
are within 20% of the nominal regulation point for RT8127.  
The over current threshold of inductor peak current (ILPK_OC  
)
and load current (ILOAD_OC) can be calculated by the  
following equations :  
The PGOOD delay time is from FB exceeding 80% of  
VREF to PGOOD rising high, the delay time is around 3  
times the soft-start time tSS.  
VX_OC  
DCR  
RX +RY  
ILPK_OC  
=
×
RY  
Where VX_OC = 40mV  
V V  
× V  
OUT  
Current Sensing  
(
LPK_OC  
)
IN  
OUT  
I
= I  
LOAD_OC  
2×L × V ×f  
X
IN SW  
The CSPx and CSNx denote the positive and negative  
input of the current sense amplifier. Users can either use  
a current sense resistor or the inductor'sDCR for current  
sensing. Using inductor's DCR allows higher efficiency  
as shown in Figure 4.  
Over Voltage Protection (OVP)  
The voltage on the FBx pin is monitored for over voltage  
protection. If the FBx voltage is higher than the OVP  
threshold (typically 120% x VREF) during normal operation,  
OVP will be triggered. When OVP is triggered, UGATEx  
goes low and LGATEx is forced high. The controller is  
latched until VCC is resupplied and exceeds the POR  
rising threshold voltage.  
V
IN  
V
OUT  
Lx DCR  
PHASEx  
I
L
R
X
R
C
Y
X
CSPx  
CSNx  
+ V -  
X
Under Voltage Protection (UVP)  
The voltage on the FBx pin is also monitored for under  
voltage protection. If the FBx voltage is lower than the  
UVP threshold (typically 50% x VREF) during normal  
operation, UVP will be triggered. When UVP is triggered,  
both UGATEx and LGATEx go low until VCC is resupplied  
and exceeds the POR rising threshold voltage.  
Figure 4. Lossless Inductor Sensing  
The sensing voltage VX can be set as :  
R
Y
V
=
×I ×DCR  
L
X
R +R  
X
Y
Then the value of RX, RY and CX can be calculated as :  
LX  
DCR  
= R // RY ×C  
(
)
X
X
Output Voltage Setting  
Over Current Protection  
The RT8127 allows the output voltage of the DC/DC  
converter to be adjusted from 0.8V to 80% of VIN via an  
external resistor divider as shown in Figure 5. It will try to  
maintain the feedback pin at internal reference voltage.  
The Over Current Protection (OCP) of RT8127 is detected  
from the inductor current sensing for good accuracy.  
Therefore, the controller can be less noise sensitive. The  
over current protection is triggered if the voltage difference  
between CSPx and CSNx exceeds 40mV for continuous  
16 switching cycles. Once the OCP is triggered, both of  
the UGATE and LGATE will go low until VCC is resupplied  
and exceeds the POR rising threshold voltage.  
V
OUT  
R
FB1  
FB2  
FB  
R
Except the OCP function described above, the controller  
provides Short Circuit Protection (SCP) function. Since  
short circuit may cause catastrophic damage over a very  
short period, the SCP should be triggered with a very short  
Figure 5. Output Voltage Setting  
The output voltage can be set according to :  
RFB1  
RFB2  
VOUT = VREF × 1 +  
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17  
RT8127  
Output Inductor Selection  
For a given output voltage sag specification, the ESR value  
can be determined.Another parameter that has influence  
on the output voltage sag is the equivalent series  
inductance (ESL). The rapid change in load current results  
in di/dt during transient. Therefore ESL contributes to part  
of the voltage sag. Using a capacitor with low ESL will  
obtain better transient performance. Generally, using  
several capacitors connected in parallel will also have better  
transient performance than just one single capacitor with  
the same total ESR. Unlike electrolytic capacitors, the  
ceramic capacitor has relatively low ESR and can reduce  
the voltage deviation during load transient. However, the  
ceramic capacitor can only provide low capacitance value.  
Therefore, it is suggested to use a mixed combination of  
electrolytic capacitor and ceramic capacitor for achieving  
better transient performance.  
Inductor plays an important role in the Buck converter  
because the energy from the input power rail is stored in  
it and then released to the load. From the viewpoint of  
efficiency, the DC Resistance (DCR) of inductor should  
be as small as possible because inductor carries current  
all the time. Using inductor that has lowerDCR can obtain  
higher efficiency. In addition, because inductor takes most  
of the board space, its size is also important. Low profile  
inductors can save board space especially when the height  
has limitation. Additionally, larger inductance results in  
lower ripple current, and therefore the lower power loss.  
However, the inductor current rising time increases with  
inductance value. This means the inductor will have a  
longer charging time before its current reaches the required  
output current. Since the response time is increased, the  
transient response performance will be decreased.  
Therefore, the inductor design is a trade-off between  
performance, size and cost. In general, inductance is  
designed such that the ripple current ranges between 20%  
to 30% of full load current. The inductance can be  
calculated by using the following equation :  
MOSFET Selection  
The majority of power loss in the step-down power  
conversion is due to the loss in the power MOSFET(s).  
For low voltage high current applications, the duty cycle  
of the high side MOSFET is small. Therefore, the switching  
loss of the high side MOSFET is of concern. Power  
MOSFET(s) with lower total gate charge are preferred in  
such kind of application. However, the small duty cycle  
means the low side MOSFET is on for most of the switching  
cycle. Therefore, the conduction loss tends to dominate  
the total power loss of the converter. To improve the overall  
efficiency, MOSFET(s) with low RDS(ON) are preferred in  
the circuit design. In some cases, more than one MOSFET  
are connected in parallel to further decrease the on-state  
resistance. However, this depends on the low side  
MOSFET driver capability and the budget.  
V
IN VOUT  
VOUT  
V
IN  
L(MIN)  
=
×
FSW ×k×IOUT_FullLoad  
where k is 0.2 to 0.3.  
Output Capacitor Selection  
The output capacitor and the inductor form a low-pass filter  
in the Buck topology. In steady state condition, the ripple  
current flowing into/out of the capacitor results in voltage  
ripple. The output voltage ripples contains two parts,  
ΔVOUT_ESR and ΔVOUT_C  
.
ΔVOUT_ESR = ΔIL ×ESR  
1
Compensation Network Design  
ΔVOUT_C = ΔIL ×  
8×COUT ×fSW  
The RT8127 is a voltage mode synchronous Buck  
controller. To compensate a typical voltage mode Buck  
converter, there are two ordinary compensation schemes,  
well known as type-II compensator and type-III  
compensator. The choice of using type-II or type-III  
compensator will be up to platform designers, and the  
main concern will be the position of the capacitor ESR  
zero and mid-frequency to high frequency gain boost.  
Typically, the ESR zero of output capacitor will tend to  
When load transient occurs, the output capacitor supplies  
the load current before controller can respond. Therefore,  
the ESR will dominate the output voltage sag during load  
transient. The output voltage sag can be calculated by  
using the following equation :  
VOUT_SAG = ESR x ΔIOUT  
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is a registered trademark of Richtek Technology Corporation.  
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18  
DS8127-05 June 2014  
RT8127  
stabilize the effect of output LC double poles, hence the  
position of the output capacitor ESR zero in frequency  
domain may influence the design of voltage loop  
compensation. If fZ(ESR) is <1/2fC, where fC denotes 0dB  
crossing frequency, type-II compensation will be sufficient  
for voltage stability. If fZ(ESR) is > 1/2fC (or higher gain and  
phase margin is required at mid frequency to high  
frequency), then type-III compensation may be a better  
solution for voltage loop compensation.  
the frequencies of poles and zero are :  
1
f
Z1  
=
2π ×R2×C1  
f
P1  
= 0  
1
f
P2  
=
C1×C2  
C1 + C2  
2π ×R2×  
Determining the 0dB crossing frequency (fC, control loop  
bandwidth) is the first step of compensator design. Usually,  
the fC is set to 0.1 to 0.3 times of the switching frequency.  
The second step is to calculate the open loop modulator  
gain and find out the gain loss at fC. The third step is to  
design a compensator gain that can compensate the  
modulator gain loss at fC. The final step is to design fZ1  
and fP2 to allow the loop sufficient phase margin. fZ1 is  
designed to cancel one of the double-pole of modulator.  
Usually, place fZ1 before fP(LC). fP2 is usually placed below  
the switching frequency (typically, 0.5 to 1 times of the  
switching frequency) to cancel high frequency noise.  
The frequency of the double-pole is determined as follows.  
1
f
=
P(LC)  
2π L  
×C  
OUT  
OUT  
The frequency of the ESR zero is determined as follows.  
1
f
=
Z(ESR)  
2π ×C  
×ESR  
OUT  
A typical type-II compensation network is shown in Figure  
6.  
C2  
C1  
R2  
A typical type-III compensation contains two zeros and  
two poles, where the extra one zero and one pole compared  
with type-II compensation are added for stabilizing the  
system when ESR zero is relatively far from LC double-  
pole in frequency domain. Figure 8 and Figure 9 show the  
R1  
-
EA  
+
+
V
REF  
-
typical circuit and bode plot of the type-III compensation.  
Figure 6. Type-II CompensationNetwork  
C2  
C3  
C1  
R3  
R1  
R2  
After determining the phase margin at crossover  
frequency, the position of zero and pole produced by type-  
II compensation network, FZ1 and FP2, can then be  
determined. The bode plot of type-II compensation is  
shown in Figure 7.  
-
EA  
+
+
V
REF  
-
Figure 8. Type-III CompensationNetwork  
F
P1  
F
P1  
F
F
P2  
Z1  
Frequency (Hz)  
Figure 7. Bode Plot of the Type-II Compensation  
F
Z1  
F
Z2  
F
P2  
F
P3  
Frequency (Hz)  
Figure 9. Bode Plot of the Type-III Compensation  
Copyright 2014 Richtek Technology Corporation. All rights reserved.  
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is a registered trademark of Richtek Technology Corporation.  
DS8127-05 June 2014  
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19  
RT8127  
A well-designed compensator regulates the output voltage  
according to the reference voltage VREF with fast transient  
response and good stability. In order to achieve fast  
transient response and accurate output regulation, an  
adequate compensator design is necessary. The goal of  
the compensation network is to provide adequate phase  
margin (usually greater than 45°) and the highest bandwidth  
(0dB crossing frequency, fC) possible. It is also  
recommended to manipulate the loop frequency response  
such that its gain crosses 0dB with a slope of 20dB/  
dec. According to Figure 9, the frequencies of poles and  
zeros are :  
For recommended operating condition specifications, the  
maximum junction temperature is 125°C. The junction to  
ambient thermal resistance, θJA, is layout dependent. For  
WQFN-28L 4x4 package, the thermal resistance, θJA, is  
52°C/W on a standard JEDEC 51-7 four-layer thermal test  
board. The maximum power dissipation at TA = 25°C can  
be calculated by the following formula :  
PD(MAX) = (125°C 25°C) / (52°C/W) = 1.923W for  
WQFN-28L 4x4 package  
The maximum power dissipation depends on the operating  
ambient temperature for fixed TJ(MAX) and thermal  
resistance, θJA. The derating curve in Figure 10 allows  
the designer to see the effect of rising ambient temperature  
on the maximum power dissipation.  
1
f
=
=
Z1  
Z2  
2π ×R2×C1  
1
f
2π × R1 + R3 ×C3  
(
)
2.00  
Four-Layer PCB  
fP1 = 0  
1
1.60  
1.20  
0.80  
0.40  
0.00  
fP2  
fP3  
=
=
2π ×R3×C3  
1
C1×C2  
2π ×R2×  
C1 + C2  
Generally, fZ1 and fZ2 are designed to cancel the double-  
pole of the modulator. Usually, place fZ1 at a fraction of  
fP(LC), and place fZ2 at fP(LC). fP2 is usually placed at fZ(ESR)  
to cancel the ESR zero, and fP3 is placed below the  
switching frequency to cancel high frequency noise.  
0
25  
50  
75  
100  
125  
Ambient Temperature (°C)  
Thermal Considerations  
Figure 10.Derating Curve of Maximum Power  
Dissipation  
For continuous operation, do not exceed absolute  
maximum junction temperature. The maximum power  
dissipation depends on the thermal resistance of the IC  
package, PCB layout, rate of surrounding airflow, and  
difference between junction and ambient temperature. The  
maximum power dissipation can be calculated by the  
following formula :  
PD(MAX) = (TJ(MAX) TA) / θJA  
where TJ(MAX) is the maximum junction temperature, TAis  
the ambient temperature, and θJA is the junction to ambient  
thermal resistance.  
Copyright 2014 Richtek Technology Corporation. All rights reserved.  
©
is a registered trademark of Richtek Technology Corporation.  
www.richtek.com  
20  
DS8127-05 June 2014  
RT8127  
Layout Consideration  
Layout planning plays a critical role in modern high  
frequency switching converter design. Circuit boards with  
good layout can help the IC functions properly and achieve  
low losses, low switching noise, and stable operation with  
good performance. For the best performance of the  
RT8127, the following PCB Layout guidelines must be  
strictly followed.  
` Place the filter capacitor close to the device pin, within  
12mm (0.5 inch) if possible.  
` Place the frequency setting resistor close to the IC  
frequency setting pin.  
` Place feedback and compensation circuits as close to  
the device pin as possible.  
` Keep current limit setting network as close as possible  
to the IC. Routing of the network should avoid coupling  
to high voltage switching node.  
` Connections from the drivers to the respective gate of  
the high side or the low side MOSFET should be as  
short as possible to reduce stray inductance. Use  
0.65mm (25 mils) or wider trace.  
` All sensitive analog traces and components such as  
VOUTx, FBx,GND, PGOODand VCC should be placed  
away from high voltage switching nodes such as  
PHASEx, LGATEx, UGATEx, or BOOTx nodes to avoid  
coupling. Use internal layer(s) as ground plane(s) and  
shield the feedback trace from power traces and  
components.  
` Gather ground terminal of VIN capacitor(s), VOUTx  
capacitor(s), and source of low side MOSFETs as close  
as possible. PCB trace defined as PHASEx node, which  
connects to source of high side MOSFET, drain of low  
side MOSFET and high voltage side of the inductor,  
should be as short and wide as possible.  
` Keep Channel 1 and Channel 2 network isolated to avoid  
mutually noise coupling.  
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©
is a registered trademark of Richtek Technology Corporation.  
DS8127-05 June 2014  
www.richtek.com  
21  
RT8127  
Outline Dimension  
D
D2  
SEE DETAIL A  
L
1
E
E2  
1
2
1
2
DETAILA  
e
b
Pin #1 ID and Tie Bar Mark Options  
A
A3  
Note : The configuration of the Pin #1 identifier is optional,  
but must be located within the zone indicated.  
A1  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
Min  
Max  
Min  
Max  
A
A1  
A3  
b
0.700  
0.000  
0.175  
0.150  
3.900  
2.350  
3.900  
2.350  
0.800  
0.050  
0.250  
0.250  
4.100  
2.450  
4.100  
2.450  
0.028  
0.000  
0.007  
0.006  
0.154  
0.093  
0.154  
0.093  
0.031  
0.002  
0.010  
0.010  
0.161  
0.096  
0.161  
0.096  
D
D2  
E
E2  
e
0.400  
0.016  
L
0.350  
0.450  
0.014  
0.018  
W-Type 28L QFN 4x4 Package  
Richtek Technology Corporation  
14F, No. 8, Tai Yuen 1st Street, Chupei City  
Hsinchu, Taiwan, R.O.C.  
Tel: (8863)5526789  
Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should  
obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot  
assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be  
accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third  
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries.  
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22  
DS8127-05 June 2014  

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