R1131D182B-TR-FE [RICOH]
Fixed Positive LDO Regulator, 1.8V, CMOS, PDSO6, HSON-6;型号: | R1131D182B-TR-FE |
厂家: | RICOH ELECTRONICS DEVICES DIVISION |
描述: | Fixed Positive LDO Regulator, 1.8V, CMOS, PDSO6, HSON-6 光电二极管 输出元件 调节器 |
文件: | 总24页 (文件大小:369K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
R1131x SERIES
Low Voltage 300mA LDO REGULATOR
NO.EA-116-130411
OUTLINE
The R1131x Series are CMOS-based low voltage regulator ICs with output voltage range from 0.8V to 3.3V.
The minimum operating voltage is 1.4V. Each of these voltage regulator ICs consists of a voltage reference unit,
an error amplifier, resistors for setting output voltage, a current limit circuit, and a chip enable circuit.
To prevent the destruction by over current, current limit circuit is included. Standby mode realizes ultra small
consumption current.
The output voltage of these ICs is internally fixed with high accuracy. Since the packages for these ICs are
SOT-23-5, SON-6, and HSON-6 (Non-promotion), high density mounting of the ICs on boards is possible.
FEATURES
• Supply Current..................................................Typ. 80μA (VOUT < 1.8V)
Typ. 60μA (VOUT ≥ 1.8V)
• Standby Mode...................................................Typ. 0.1μA
• Dropout Voltage ................................................Typ. 0.48V(IOUT=300mA Output Voltage=1.0V Type)
Typ. 0.31V(IOUT=300mA Output Voltage=1.5V Type)
Typ. 0.23V(IOUT=300mA Output Voltage=3.0V Type)
• Ripple Rejection................................................Typ. 65dB(f=1kHz)
•
Temperature-Drift Coefficient of Output Voltage........Typ. ±100ppm/°C
• Line Regulation.................................................Typ. 0.01%/V
• Output Voltage Accuracy...................................±2.0%
• Output Voltage Range.......................................0.8V to 3.3V (0.1V steps)
(For other voltages, please refer to MARK INFORMATIONS.)
• Input Voltage Range .........................................1.4V to 6.0V
• Packages .........................................................SOT-23-5, SON-6, HSON-6 (Non-promotion)
• Built-in fold-back protection circuit....................Typ. 50mA (Current at short mode)
• External Capacitors...........................................CIN=COUT=Tantalum 1.0μF (VOUT < 1.0V)
CIN=COUT=Ceramic 1.0μF (VOUT ≥ 1.0V)
APPLICATIONS
• Precision Voltage References.
• Power source for electrical appliances such as cameras, VCRs and hand-held communication equipment.
• Power source for battery-powered equipment.
1
R1131x
BLOCK DIAGRAM
R1131xxxxA
R1131xxxxB
V
OUT
VOUT
V
DD
VDD
Vref
Vref
Current Limit
Current Limit
CE
GND
CE
GND
R1131xxxxD
V
OUT
V
DD
Vref
Current Limit
CE
GND
2
R1131x
SELECTION GUIDE
The output voltage, CE pin polarity, auto discharge function, package, etc. for the ICs can be selected at the
user’s request.
Product Name
R1131Nxx1∗-TR-FE
R1131Dxx1∗-TR-FE
Package
SOT-23-5
SON-6
Quantity per Reel
3,000 pcs
Pb Free
Yes
Halogen Free
Yes
Yes
3,000 pcs
Yes
HSON-6
(Non-promotion)
3,000 pcs
Yes
Yes
R1131Dxx2∗-TR-FE
xx: The output voltage can be designated in the range from 0.8V(08) to 3.3V(33) in 0.1V steps.
(For other voltages, please refer to MARK INFORMATIONS.)
∗ : CE pin polarity and auto discharge function at off state are options as follows.
(A) "L" active, without auto discharge function at off state
(B) "H" active, without auto discharge function at off state
(D) "H" active, with auto discharge function at off state
The products scheduled to be discontinued : "Non-promotion"
These products will be discontinued in the future. We advise you to select other products.
3
R1131x
PIN CONFIGURATIONS
z SOT-23-5
z SON-6
Bottom View
z HSON-6
Bottom View
Top View
Top View
5
4
6 5 4
4 5 6
6
1
5
4
4
5
6
∗
∗
∗
(mark side)
∗
∗
1 2 3
3 2 1
1
2
3
2
3
3
2
1
PIN DESCRIPTIONS
• SOT-23-5
Pin No
Symbol
Pin Description
1
2
3
4
5
VDD
Input Pin
GND
CE
Ground Pin
Chip Enable Pin
No Connection
Output pin
or CE
NC
VOUT
• SON-6, HSON-6 (Non-promotion)
Pin No
Symbol
Pin Description
1
2
3
4
5
6
VDD
Input Pin
NC
No Connection
Output pin
VOUT
NC
No Connection
Ground Pin
GND
Chip Enable Pin
CE
or CE
∗) Tab and tab suspension leads are GND level. (They are connected to the reverse side of this IC.)
The tab is better to be connected to the GND, but leaving it open is also acceptable.
The tab suspension leads do not be connect to other wires or land patterns.
4
R1131x
ABSOLUTE MAXIMUM RATINGS
Symbol
Item
Rating
6.5
Unit
V
VIN
Input Voltage
Input Voltage(
VCE
V
−0.3 to 6.5
−0.3 to VIN+0.3
350
CE
/CE Pin)
VOUT
IOUT
Output Voltage
V
Output Current
mA
Power Dissipation (SOT-23-5)∗
Power Dissipation (SON-6) ∗
420
PD
mW
500
Power Dissipation (HSON-6) (Non-promotion)∗
900
Topt
Tstg
Operating Temperature Range
−40 to 85
−55 to 125
°C
°C
Storage Temperature Range
∗) For Power Dissipation please refer to PACKAGE INFORMATION.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the
permanent damages and may degrade the life time and safety for both device and system using the device
in the field.
The functional operation at or over these absolute maximum ratings is not assured.
5
R1131x
ELECTRICAL CHARACTERISTICS
• R1131xxxxA
Topt=25°C
Symbol
Item
Conditions
Min.
Typ.
Max. Unit
VOUT >1.5V
V
×0.98
−30
×1.02
+30
VIN=Set VOUT+1V
1μA ≤ IOUT ≤ 30mA
VOUT
Output Voltage
VOUT ≤ 1.5V
mV
mA
IOUT
Output Current
300
VIN −VOUT=1.0V
ΔVOUT/
ΔIOUT
VIN=Set VOUT+1V,
Load Regulation
40
70
mV
mV
μA
1mA ≤ IOUT ≤ 300mA
VOUT=0.8V
620
550
480
310
230
850
780
700
450
350
VOUT=0.9V
VDIF
ISS1
Dropout Voltage
Supply Current
IOUT=300mA
1.0V ≤ VOUT < 1.5V
1.5V ≤ VOUT < 2.6V
2.6V ≤ VOUT ≤ 3.3V
80
111
VIN=Set VOUT+1V, VOUT < 1.8V
60
90
VIN=Set VOUT+1V, VOUT ≥ 1.8V
VIN=VCE=Set VOUT+1V
μA
μA
Istandby Standby Current
0.1
1.0
IOUT=30mA
ΔVOUT/
Line Regulation
ΔVIN
0.01
65
0.15
6.0
%/V
VOUT+0.5V ≤ VIN ≤ 6.0V (VOUT > 0.9V)
1.4V ≤ VIN ≤ 6.0V (VOUT ≤ 0.9V)
f=1kHz, Ripple 0.2Vp-p
VIN=Set VOUT+1V, IOUT=30mA
RR
Ripple Rejection
Input Voltage
dB
V
VIN
1.4
ppm
/°C
ΔVOUT/ Output Voltage
ΔTopt
IOUT=30mA
−40°C ≤ Topt ≤ 85°C
±100
Temperature Coefficient
ISC
Short Current Limit
50
mA
MΩ
V
VOUT=0V
RPU
1.87
1.0
0
5.0
12.0
6.0
CE
CE
CE
Pull-up Resistance
Input Voltage “H”
Input Voltage “L”
VCEH
VCEL
en
0.3
V
Output Noise
30
BW=10Hz to 100kHz
μVrms
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
6
R1131x
• R1131xxxxB/D
Topt=25°C
Symbol
Item
Conditions
Min.
Typ. Max. Unit
VOUT >1.5V
V
×0.98
−30
×1.02
+30
VIN=Set VOUT+1V
1μA ≤ IOUT ≤ 30mA
VOUT
Output Voltage
VOUT ≤ 1.5V
mV
mA
IOUT
Output Current
300
VIN−VOUT=1.0V
ΔVOUT/
ΔIOUT
VIN=Set VOUT+1V
Load Regulation
40
70
mV
mV
μA
1mA ≤ IOUT ≤ 300mA
VOUT=0.8V
620
550
480
310
230
850
780
700
450
350
VOUT=0.9V
VDIF
ISS1
Dropout Voltage
Supply Current
IOUT=300mA
1.0V ≤ VOUT < 1.5V
1.5V ≤ VOUT < 2.6V
2.6V ≤ VOUT ≤ 3.3V
80
111
VIN=Set VOUT+1V, VOUT < 1.8V
60
90
VIN=Set VOUT+1V, VOUT ≥ 1.8V
VIN=Set VOUT+1V, VCE=GND
μA
μA
Istandby Standby Current
0.1
1.0
IOUT=30mA
ΔVOUT/
Line Regulation
ΔVIN
0.01
65
0.15
6.0
%/V
VOUT+0.5V ≤ VIN ≤ 6.0V(VOUT > 0.9V)
1.4V ≤ VIN ≤ 6.0V(VOUT ≤ 0.9V)
f=1kHz, Ripple 0.2Vp-p
VIN=Set VOUT+1V, IOUT=30mA
RR
Ripple Rejection
Input Voltage
dB
V
VIN
1.4
ppm
/°C
ΔVOUT/ Output Voltage
ΔTopt
IOUT=30mA
−40°C ≤ Topt ≤ 85°C
±100
Temperature Coefficient
ISC
Short Current Limit
CE Pull-down Resistance
CE Input Voltage “H”
CE Input Voltage “L”
Output Noise
50
mA
MΩ
V
VOUT=0V
RPD
VCEH
VCEL
en
1.87
1.0
0
5.0
12.0
6.0
0.3
V
30
60
BW=10Hz to 100kHz
VCE=0V
μ
Vrms
Nch On Resistance for auto
discharge (D version only)
RLOW
Ω
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
7
R1131x
TYPICAL APPLICATION
IN
OUT
OUT
V
DD
OUT
R1131OxUT
Series
C1
C2
GND
CE ⋅ CE
<External Components examples>
C2 1.0μF CM05X5R105K06AB (Kyocera)
C2 1.0μF C1005JBOJ105K (TDK)
C2 1.0μF GRM155B30J105KE18B (Murata)
Output Capacitor; 1.0μF or more capacity ceramic Type
(If VOUT < 1.0V, Tantalum Type is recommended)
Input Capacitor, 1.0μF or more capacity ceramic Type
TECHNICAL NOTES
When using these ICs, consider the following points:
Phase Compensation
In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For
this purpose, be sure to use a 1.0μF or more capacitor COUT with good frequency characteristics and ESR
(Equivalent Series Resistance).
(Note: If a tantalum capacitor is connected to the Output pin for phase compensation, if the ESR value of the
capacitor is too large, the operation might be unstable. Because of this, test these ICs with as same external
components as ones to be used on the PCB.)
Chip capacitor characteristics of Bias dependence and Temperature characteristics may vary depending on its
size, manufacturer, and part number.
PCB Layout
Make VDD and GND lines sufficient. If their impedance is high, pick-up the noise or unstable operation may
result. Connect a capacitor with as much as 1.0μF capacitor between VDD and GND pin as close as possible.
Set external components, especially the output capacitor, as close as possible to the ICs, and make wiring as
short as possible.
8
R1131x
TEST CIRCUIT
V
DD
OUT
VDD
OUT
OUT
ISS
A
R1131x
Series
R1131x
Series
C1
C2
C1
C2
IOUT
VOUT
GND
GND
V
CE ⋅ CE
CE ⋅ CE
∗ C1=C2= Tantalum1.0μF (VOUT<1.0V)
∗ C1=C2=Tantalum1.0μF (VOUT<1.0V)
>
>
C1=C2=Ceramic1.0μF (VOUT 1.0V)
=
C1=C2=Ceramic1.0μF (VOUT 1.0V)
=
Standard Test Circuit
Supply Current Test Circuit
V
DD
OUT
Pulse
Generator
V
DD
OUT
R1131x
Series
R1131x
Series
P.G
C1
C2
C2
IOUT
GND
GND
I
OUTa
I
OUTb
CE ⋅ CE
CE ⋅ CE
∗ C1=C2=Tantalum1.0μF (VOUT<1.0V)
∗ C2=Tantalum1.0μF (VOUT<1.0V)
>
C1=C2=Ceramic1.0μF (VOUT 1.0V)
>
=
C2=Ceramic1.0μF (VOUT 1.0V)
=
Ripple Rejection, Line Transient Response
Test Circuit
Load Transient Response Test Circuit
V
DD
OUT
R1131x
Series
C1
C2
IOUT
∗ Input signal waveform
to CE pin is shown below.
GND
Pulse
Generator
Set VOUT
+1.0V
CE ⋅ CE
0 V
∗ C1=C2=Tantalum1.0μF (VOUT<1.0V)
>
C1=C2=Ceramic1.0μF (VOUT 1.0V)
=
Turn on Speed with CE pin Test Circuit
9
R1131x
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Output Current
R1131x08xx
R1131x15xx
1.0
0.9
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
V
IN =2.8V
3.5V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2.5V
1.45V
2.0V
VIN =1.8V
0
100 200
300 400 500
600
0
100 200
300 400 500
Output Current lOUT(mA)
600
Output Current lOUT(mA)
R1131x26xx
R1131x33xx
3.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
3.0
2.5
2.0
1.5
1.0
0.5
0
5.3V
4.3V
4.6V
3.8V
3.6V
3.1V
V
IN =3.6V
V
IN =2.9V
0
100 200
300 400 500
600
0
100 200
300 400 500
600
Output Current lOUT(mA)
Output Current lOUT(mA)
2) Output Voltage vs. Input Voltage
R1131x08xx
R1131x15xx
1.0
0.9
0.8
0.7
0.6
0.5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
IOUT= 1mA
IOUT=30mA
IOUT=50mA
IOUT= 1mA
0.4
0.3
0.2
0.1
0
IOUT=30mA
IOUT=50mA
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Input Voltage VIN(V)
Input Voltage VIN(V)
10
R1131x
R1131x26xx
R1131x33xx
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
I
I
I
OUT= 1mA
OUT=30mA
OUT=50mA
I
I
I
OUT= 1mA
OUT=30mA
OUT=50mA
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Input Voltage VIN(V)
Input Voltage VIN(V)
3) Supply Current vs. Input Voltage
R1131x08xx
R1131x15xx
90
100
90
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Input Voltage VIN(V)
Input Voltage VIN(V)
R1131x26xx
R1131x33xx
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Input Voltage VIN(V)
Input Voltage VIN(V)
11
R1131x
4) Output Voltage vs. Temperature
R1131x08xx
R1131x15xx
0.84
1.53
1.52
1.51
1.50
1.49
1.48
1.47
1.46
0.83
0.82
0.81
0.80
0.79
0.78
0.77
-40 -25
0
25
50
75 85
-40 -25
0
25
50
75 85
Temperature Topt(°C)
Temperature Topt(°C)
R1131x26xx
R1131x33xx
3.37
3.35
3.33
3.31
3.29
3.27
3.25
3.23
2.64
2.63
2.62
2.61
2.60
2.59
2.58
2.57
-40 -25
0
25
50
75 85
-40 -25
0
25
50
75 85
Temperature Topt(°C)
Temperature Topt(°C)
5) Supply Current vs. Temperature
R1131x08xx
R1131x15xx
110
100
90
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
-40 -25
0
25
50
75 85
-40 -25
0
25
50
75 85
Temperature Topt(°C)
Temperature Topt(°C)
12
R1131x
R1131x26xx
R1131x33xx
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
-40 -25
0
25
50
75 85
-40 -25
0
25
50
75 85
Temperature Topt(°C)
Temperature Topt(°C)
6) Dropout Voltage vs. Output Current
R1131x08xx
R1131x09xx
0.8
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
85°C
25°C
-40°C
0.7
0.6
0.5
0.4
85°C
25°C
0.3
0.2
0.1
0
-40°C
0
50
100
150 200 250 300
0
50
100
150 200 250 300
Output Current IOUT(mA)
Output Current IOUT(mA)
R1131x10xx
R1131x15xx
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
85°C
25°C
-40°C
85°C
25°C
-40°C
0
50
100
150 200 250 300
0
50
100
150 200 250 300
Output Current IOUT(mA)
Output Current IOUT(mA)
13
R1131x
R1131x26xx
R1131x33xx
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.40
85°C
25°C
-40°C
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
85°C
25°C
-40°C
0
50
100
150 200 250 300
0
50
100
150 200 250 300
Output Current IOUT(mA)
Output Current IOUT(mA)
7) Dropout Voltage vs. Set Output Voltage (Topt=25°C)
R1131xxx1x
0.80
I
OUT=10mA
30mA
50mA
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
100mA
200mA
300mA
0.5
1
1.5
2
2.5
3
3.5
Set Output Voltage VREG(V)
8) Ripple Rejection vs. Input Bias (Topt=25°C CIN=none, COUT=Ceramic 1.0μF Ripple 0.2VP-P)
R1131x26xx (IOUT=1mA)
R1131x26xx (IOUT=30mA)
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
f = 400Hz
f = 400Hz
f = 1kHz
f = 10kHz
f = 100kHz
f = 1kHz
f = 10kHz
f = 100kHz
2.6
2.7
2.8
2.9
3.0
3.1
3.2
2.6
2.7
2.8
2.9
3.0
3.1
3.2
Input Voltage VIN(V)
Input Voltage VIN(V)
14
R1131x
R1131x26xx (IOUT=50mA)
80
70
60
50
40
30
20
10
0
f = 400Hz
f = 1kHz
f = 10kHz
f = 100kHz
2.6
2.7
2.8
2.9
3.0
3.1
3.2
Input Voltage VIN(V)
9) Ripple Rejection vs. Frequency (CIN=none)
R1131x08xx
R1131x08xx
VIN=1.8VDC+0.2Vp-p,
V
IN=1.8VDC+0.2Vp-p,
C
OUT=Tantalum 2.2μF
C
OUT=Tantalum 1.0μF
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
I
I
I
OUT
= 1mA
I
I
I
OUT = 1mA
OUT = 30mA
OUT = 50mA
OUT = 30mA
OUT = 50mA
0.1
1
10
100
0.1
1
10
100
Frequency f(kHz)
Frequency f(kHz)
R1131x10xx
R1131x10xx
V
IN=2.0VDC+0.2Vp-p,
V
IN=2.0VDC+0.2Vp-p,
C
OUT=Ceramic 2.2μF
C
OUT=Ceramic 1.0μF
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
I
I
I
OUT
= 1mA
I
I
I
OUT
= 1mA
OUT = 30mA
OUT = 50mA
OUT = 30mA
OUT = 50mA
0.1
1
10
100
0.1
1
10
100
Frequency f(kHz)
Frequency f(kHz)
15
R1131x
R1131x15xx
R1131x15xx
V
IN=2.5VDC+0.2Vp-p,
V
IN=2.5VDC+0.2Vp-p,
C
OUT=Ceramic 1.0μF
C
OUT=Ceramic 2.2μF
100
100
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
I
I
I
OUT = 1mA
OUT = 30mA
OUT = 50mA
I
I
I
OUT = 1mA
OUT = 30mA
OUT = 50mA
0.1
1
10
100
100
100
0.1
1
10
100
100
100
Frequency f(kHz)
Frequency f(kHz)
R1131x26xx
R1131x26xx
V
IN=3.6VDC+0.2Vp-p,
V
IN=3.6VDC+0.2Vp-p,
C
OUT=Ceramic 1.0μF
C
OUT=Ceramic 2.2μF
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
I
I
I
OUT = 1mA
OUT = 30mA
OUT = 50mA
I
I
I
OUT
= 1mA
OUT = 30mA
OUT = 50mA
0.1
1
10
0.1
1
10
Frequency f(kHz)
Frequency f(kHz)
R1131x33xx
R1131x33xx
V
IN=4.3VDC+0.2Vp-p,
V
IN=4.3VDC+0.2Vp-p,
C
OUT=Ceramic 1.0μF
C
OUT=Ceramic 2.2μF
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
I
I
I
OUT
=
1mA
I
I
I
OUT = 1mA
OUT = 30mA
OUT = 50mA
OUT = 30mA
OUT = 50mA
0.1
1
10
0.1
1
10
Frequency f(kHz)
Frequency f(kHz)
16
R1131x
10) Input Transient Response (CIN=none, tr=tf=5μs)
R1131x08xx
R1131x10x
I
OUT=30mA,
I
OUT=30mA,
C
OUT=Ceramic 1.0μF
C
OUT=Tantalum 1.0μF
4
3
2
1
4
3
2
1
Input Voltage
Input Voltage
1.02
1.00
0.98
0.96
0.82
0.80
0.78
0.76
Output Voltage
Output Voltage
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
Time t(μs)
Time t(μs)
R1131x26xx
IOUT=30mA,
C
OUT=Ceramic 1.0μF
5
4
3
Input Voltage
2.62
2.60
2.58
2.56
Output Voltage
0
10 20 30 40 50 60 70 80 90 100
Time t(μs)
11) Load Transient Response (tr=tf=0.5μs)
R1131x08xx
R1131x08xx
V
IN=1.8V CIN=Tantalum 1.0μF,
OUT=Tantalum 2.2μF
V
IN=1.8V CIN=Tantalum 1.0μF,
C
C
OUT=Tantalum 1.0μF
150
100
50
60
30
0
Output Current
Output Voltage
Output Current
Output Voltage
0
0.9
0.8
0.7
0.6
0.9
0.8
0.7
0.6
0
0
5
10 15 20 25 30 35 40
5
10 15 20 25 30 35 40
Time t(μs)
Time t(μs)
17
R1131x
R1131x10xx
R1131x10xx
V
IN=2.0V CIN=Ceramic 1.0μF,
OUT=Ceramic 1.0μF
V
IN=2.0V CIN=Ceramic 1.0μF,
OUT=Ceramic 2.2μF
C
C
150
100
50
150
100
50
Output Current
Output Voltage
Output Current
Output Voltage
0
1.1
1.0
0.9
0
1.1
1.0
0.9
0.8
0.8
0
5
10 15 20 25 30 35 40
0
0
0
5
5
5
10 15 20 25 30 35 40
Time t(μs)
Time t(μs)
R1131x10xx
R1131x10xx
V
IN=2.0V CIN=Ceramic 1.0μF,
V
IN=2.0V CIN=Ceramic 1.0μF,
OUT=Ceramic 1.0μF
C
OUT=Ceramic 2.2μF
C
60
30
0
60
30
0
Output Current
Output Current
1.1
1.0
0.9
0.8
1.1
1.0
0.9
Output Voltage
Output Voltage
0.8
0
10 15 20 25 30 35 40
5
10 15 20 25 30 35 40
Time t(μs)
Time t(μs)
R1131x26xx
R1131x26xx
V
IN=3.6V CIN=Ceramic 1.0μF,
OUT=Ceramic 1.0μF
V
IN=3.6V CIN=Ceramic 1.0μF,
OUT=Ceramic 2.2μF
C
C
150
100
50
150
100
50
Output Current
Output Voltage
Output Current
Output Voltage
0
0
2.7
2.6
2.5
2.7
2.6
2.5
2.4
2.4
0
5
10 15 20 25 30 35 40
10 15 20 25 30 35 40
Time t(μs)
Time t(μs)
18
R1131x
R1131x26xx
R1131x26xx
V
IN=3.6V CIN=Ceramic 1.0μF,
OUT=Ceramic 2.2μF
V
IN=3.6V CIN=Ceramic 1.0μF,
OUT=Ceramic 1.0μF
C
C
60
30
0
60
30
0
Output Current
Output Current
2.7
2.6
2.5
2.4
2.7
2.6
2.5
2.4
Output Voltage
Output Voltage
0
5
10 15 20 25 30 35 40
0
5
10 15 20 25 30 35 40
Time t(μs)
Time t(μs)
12) Turn on speed with CE pin
R1131x08xx
R1131x08xx
V
IN=1.8V CIN=Tantalum 1.0μF,
OUT=Tantalum 1.0μF
V
IN=1.8V CIN=Tantalum 1.0μF,
C
C
OUT=Tantalum 1.0μF
2.7
1.8
0.9
0
2.7
1.8
0.9
0
CE Input Voltage
CE Input Voltage
0V→1.8V
0V→1.8V
Output Voltage
Output Voltage
1.0
0.5
0
1.0
0.5
0
IOUT=0mA
IOUT=30mA
0
10 20 30 40 50 60 70
0
10 20 30 40 50 60 70
Time t(μs)
Time t(μs)
R1131x08xx
R1131x33xx
V
IN=4.3V CIN=Ceramic 1.0μF,
OUT=Ceramic 1.0μF
V
IN=1.8V CIN=Tantalum 1.0μF,
OUT=Tantalum 1.0μF
C
C
6
4
2
0
2.7
1.8
0.9
0
CE Input Voltage
CE Input Voltage
0V→4.3V
0V→1.8V
4
3
2
1
0
Output Voltage
1.0
0.5
0
Output Voltage
I
OUT=0mA
IOUT=300mA
0
10 20 30 40 50 60 70
0
20 40 60 80 100 120 140
Time t(μs)
Time t(μs)
19
R1131x
R1131x33xx (ECO=H)
R1131x33xx (ECO=L)
V
IN=4.3V CIN=Ceramic 1.0μF,
OUT=Ceramic 1.0μF
V
IN=4.3V CIN=Ceramic 1.0μF,
C
COUT=Ceramic 1.0μF
6
4
2
0
6
4
2
0
CE Input Voltage
CE Input Voltage
0V→4.3V
0V→4.3V
4
3
2
1
0
4
3
2
1
0
Output Voltage
Output Voltage
IOUT=30mA
I
OUT=300mA
0
20 40 60 80 100 120 140
0
20 40 60 80 100 120 140
Time t(μs)
Time t(μs)
13) Turn-off Speed with CE
R1131x08xD
R1131x08xD
V
IN=1.8V CIN=Tantalum 1.0μF,
OUT=Tantalum 1.0μF
V
IN=1.8V CIN=Tantalum 1.0μF,
OUT=Tantalum 1.0μF
C
C
2.4
2.4
1.8
1.2
0.6
0
1.8
1.2
0.6
0
CE Input Voltage
1.8V→0V
CE Input Voltage
1.8V→0V
1.0
0.5
0
1.0
0.5
0
Output Voltage
Output Voltage
IOUT=0mA
I
OUT=30mA
0
0.2 0.4 0.6 0.8 1.0 1.2
Time t(ms)
0
0.2 0.4 0.6 0.8 1.0 1.2
Time t(ms)
R1131x08xD
R1131x33xD
V
IN=4.3V CIN=Ceramic 1.0μF,
V
IN=1.8V CIN=Tantalum 1.0μF,
C
OUT=Ceramic 1.0μF
C
OUT=Tantalum 1.0μF
5
4
3
2
1
0
2.4
1.8
1.2
0.6
0
CE Input Voltage
4.3V→0V
CE Input Voltage
1.8V→0V
4
3
2
1
0
1.0
0.5
0
Output Voltage
Output Voltage
OUT=300mA
I
IOUT=0mA
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Time t(ms)
0
0.2 0.4 0.6 0.8 1.0 1.2
Time t(ms)
20
R1131x
R1131x33xD
R1131x33xD
V
IN=4.3V CIN=Ceramic 1.0μF,
V
IN=4.3V CIN=Ceramic 1.0μF,
OUT=Ceramic 1.0μF
C
OUT=Ceramic 1.0μF
C
5
4
3
2
1
0
5
4
3
2
1
0
CE Input Voltage
4.3V→0V
CE Input Voltage
4.3V→0V
4
3
2
1
0
4
3
2
1
0
Output Voltage
Output Voltage
I
OUT=30mA
I
OUT=300mA
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Time t(ms)
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Time t(ms)
21
R1131x
ESR vs. Output Current
When using these ICs, consider the following points:
In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For
this purpose, be sure to use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series
Resistance) of which is in the range described as follows:
The relations between IOUT (Output Current) and ESR of Output Capacitor are shown below.
The conditions when the white noise level is under 40μV(Avg.) are marked as the hatched area in the graph.
<Test conditions>
(1) Frequency band: 10Hz to 2MHz
(2) Temperature: 25°C
R1131x08xx
R1131x10xx
VIN=1.4V to 6.0V,
CIN=Ceramic 1.0VμF COUT=Ceramic 1.0μF
V
IN=1.4V to 6.0V,
C =Ceramic 1.0VμF COUT=Ceramic 1.0μF
IN
100
10
1
100
10
1
0.1
0.1
0.01
0.01
0
50
100
150 200 250
300
0
50
100
150 200 250
300
Output Current lOUT (mA)
Output Current lOUT (mA)
R1131x26xx
R1131x15xx
VIN=2.0V to 6.0V,
CIN=Ceramic 1.0VμF COUT=Ceramic 1.0μF
VIN=3.0V to 6.0V,
CIN=Ceramic 1.0VμF COUT=Ceramic 1.0μF
100
10
1
100
10
1
0.1
0.1
0.01
0.01
0
50
100
150 200 250
300
0
50
100
150 200 250
300
Output Current lOUT (mA)
Output Current lOUT (mA)
22
R1131x
R1131x33xx
VIN=3.6V to 6.0V,
CIN=Ceramic 1.0VμF COUT=Ceramic 1.0μF
100
10
1
0.1
0.01
0
50
100
150 200 250
300
Output Current lOUT (mA)
23
1.The products and the product specifications described in this document are subject to change or
discontinuation of production without notice for reasons such as improvement. Therefore, before
deciding to use the products, please refer to Ricoh sales representatives for the latest
information thereon.
2.The materials in this document may not be copied or otherwise reproduced in whole or in part
without prior written consent of Ricoh.
3.Please be sure to take any necessary formalities under relevant laws or regulations before
exporting or otherwise taking out of your country the products or the technical information
described herein.
4.The technical information described in this document shows typical characteristics of and
example application circuits for the products. The release of such information is not to be
construed as a warranty of or a grant of license under Ricoh's or any third party's intellectual
property rights or any other rights.
5.The products listed in this document are intended and designed for use as general electronic
components in standard applications (office equipment, telecommunication equipment,
measuring instruments, consumer electronic products, amusement equipment etc.). Those
customers intending to use a product in an application requiring extreme quality and reliability,
for example, in a highly specific application where the failure or misoperation of the product
could result in human injury or death (aircraft, spacevehicle, nuclear reactor control system,
traffic control system, automotive and transportation equipment, combustion equipment, safety
devices, life support system etc.) should first contact us.
6.We are making our continuous effort to improve the quality and reliability of our products, but
semiconductor products are likely to fail with certain probability. In order to prevent any injury to
persons or damages to property resulting from such failure, customers should be careful enough
to incorporate safety measures in their design, such as redundancy feature, firecontainment
feature and fail-safe feature. We do not assume any liability or responsibility for any loss or
damage arising from misuse or inappropriate use of the products.
7.Anti-radiation design is not implemented in the products described in this document.
8.Please contact Ricoh sales representatives should you have any questions or comments
concerning the products or the technical information.
For the conservation of the global environment, Ricoh is advancing the decrease of the negative environmental impact material.
After Apr. 1, 2006, we will ship out the lead free products only. Thus, all products that will be shipped from now on comply with RoHS Directive.
Basically after Apr. 1, 2012, we will ship out the Power Management ICs of the Halogen Free products only. (Ricoh Halogen Free products are
also Antimony Free.)
Halogen Free
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Electronic Devices Company
http://www.ricoh.com/LSI/
RICOH COMPANY, LTD.
Electronic Devices Company
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