R1172N40A-TR [RICOH]
Regulator;
| 型号： | R1172N40A-TR |
| 厂家： | 
RICOH ELECTRONICS DEVICES DIVISION |
| 描述： | Regulator |
| 文件： | 总25页 (文件大小：437K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Super low on resistance/Low voltage LDO
NO. EA-122-0512
R1172x SERIES
OUTLINE
The R1172x Series are CMOS-based positive voltage regulator ICs. The R1172x Series have features of
super low dropout, 1A output current capability. Even the output voltage is set at 1.5V, on resistance of internal
FET is typically 0.32Ω. Therefore, applications that require a large current at small dropout are suitable for the
R1172x series. Low input voltage is acceptable and low output voltage can be set. The minimum input voltage is
1.4V, and the lowest set output voltage is 0.8V. Each of these ICs consists of a voltage reference unit, an error
amplifier, resistor net for setting output voltage, a current limit circuit at over-current, a chip enable circuit, a
thermal-shutdown circuit, and so on. A stand-by mode with ultra low consumption current can be realized with
the chip enable pin. The output voltage of R1172 is fixed in the IC.
Since the packages for these ICs are SOT-23-5, SOT-89-5, HSON-6, and HSOP-6J with high power
dissipation, high density mounting of the ICs on boards is possible.
FEATURES
• Ultra-Low Supply Current............................................. Typ. 60µA
• Good Load Regulation................................................. Typ. 15mV at IOUT=300mA, Typ. 50mV at IOUT=1A
• Low inrush current at turning-on.................................. Min. 500 mA
• Minimum Operating Voltage......................................... Min. 1.4V
• Low Standby Current ................................................... Typ. 0.1µA
• Output Current ............................................................. Max. 1A
• Output Voltage ............................................................. Stepwise setting with a step of 0.1V in the range of
0.8V to 5.0V（Except HSOP-6J type, 0.8V to 3.5V
setting is available for HSOP-6J）
• High Output Voltage Accuracy ..................................... ±2.0%
• High Power Supply Ripple Rejection........................... Typ. 70dB (VOUT=3V)
• Low Dropout Voltage.................................................... Typ. 0.18V (VOUT=3.0V, IOUT=1A)
Typ. 0.32V (VOUT=1.5V,IOUT=1A)
• Line Regulation............................................................ Typ. 0.05%/V
• Packages ..................................................................... SOT-23-5, SOT-89-5, HSON-6,
High power-HSOP-6J
• Built-in Current Limit Circuit
• Built-in Thermal Shutdown Circuit
• Low Temperature-drift Coefficient of Output Voltage... Typ.±100ppm/°C
• Output capacitors......................................................... CIN=COUT=Tantalum 4.7µF(VOUT<1.0V)
>
CIN=COUT=Ceramic 4.7µF(VOUT 1.0V)
=
APPLICATIONS
• Local Power source for Notebook PC.
• Local Power source for portable communication equipments, cameras, and videos.
• Local Power source for home appliances.
1
R1172x
BLOCK DIAGRAMS
R1172xxx1A
VOUT
VDD
Vref
GND
Current Limit
CE
R1172xxx1B
R1172xxx1D
VOUT
VOUT
GND
VDD
CE
VDD
CE
Vref
Vref
GND
Current Limit
Current Limit
SELECTION GUIDE
The output voltage, with/without auto-discharge function, the package type, etc. can be selected at the
user's request.The selection can be made with the part number as follows;
R1172xxx1x-xx←Part Number
↑ ↑ ↑ ↑
a b c d
Code
Contents
a
Package Type; N: SOT-23-5, H: SOT-89-5, D: HSON-6, S: HSOP-6J
Designation of Output Voltage (VOUT)
Fixed Type: 08 to 50 Stepwise setting with 0.1V increment in the range from
0.8V to 5.0V, exceptions; 2.85V output: R1172x281x5-xx, 1.85V output:
R1172x181x5-xx
b
Designation of option;
A: Built-in Chip Enable Circuit, Active at "L", without auto-discharge
B: Built-in Chip Enable Circuit, Active at "H", without auto-discharge
D: Built-in Chip Enable Circuit, Active at "H", with auto-discharge
c
Designation of Taping Type;
d
T1 (SOT-89-5), TR (SOT23-5, HSON-6), E2 (HSOP-6J)
(Refer to Taping Specifications)
2
R1172x
PIN CONFIGURATION
ꢀSOT-23-5
ꢀSOT-89-5
ꢀHSON-6
ꢀHSOP-6J
5
5
4
6
4
6
5
4
5
4
(mark side)
1
2
3
R
1
2
3
1
2
3
1
2
3
PIN DESCRIPTION
ꢀSOT-23-5 (R1172N)
ꢀSOT-89-5 (R1172H)
Pin No
Symbol
Description
Pin No
Symbol
Description
Voltage Regulator
Output Pin
1
VOUT
1
Chip Enable Pin
CE or CE
2
3
4
GND
VDD
Ground Pin
Input Pin
2
3
4
GND
NC
Ground Pin
No Connection
Input Pin
NC
No Connection
VDD
Voltage Regulator
Output Pin
5
Chip Enable Pin
5
VOUT
CE or CE
ꢀHSON-6 (R1172D)
ꢀHSOP-6J (R1172S)
Pin No
Symbol
Description
Pin No
Symbol
Description
Voltage Regulator
Output Pin
Voltage Regulator
Output Pin
1
VOUT
VOUT
1
VOUT
Voltage Regulator
Output Pin
2
2
GND
Ground Pin
3
4
5
6
Chip Enable Pin
Ground Pin
Input Pin
3
4
5
6
Chip Enable Pin
No Connection
Ground Pin
CE or CE
GND
VDD
CE or CE
NC
GND
VDD
VDD
Input Pin
Input Pin
* The back side tab and tab could be GND level.
Connect Pin1 and Pin2 as short as possible.
3
R1172x
ABSOLUTE MAXIMUM RATINGS
Symbol
Item
Rating
6.5
Unit
V
VIN
Input Voltage
VCE
V
−0.3 ~ 6.5
−0.3 ~ VIN+0.3
1.4
Input Voltage ( CE or CE Input Pin)
Output Voltage
VOUT
IOUT
V
Output Current
A
PD
Power Dissipation
Internally limited
Topt
Tstg
Operating Temperature
Storage Temperature
−40 ~ 85
°C
°C
−55 ~ 125
Power Dissipation (SOT89-5)
Power dissipation depends on mounting conditions. The data below is an example.
Measurement Conditions
・Mounting on board: Wind velocity=0m/s
・Board Material: Glass Epoxy Resin (Double Layers)
High PD Land Pattern
30mm×30mm×1.6mm
20%
Standard Land Pattern
Board Dimensions
Top Side Wiring Ratio
Back Side Wiring Ratio
Thermal via holes
40mm×40mm×1.6mm
Less than 10%
100%
100%
-
Diameter 0.85mm×10pieces
Measurement Result:
(Topt=25°C, Tjmax=125°C)
High PD Land Pattern
1300mW
Standard Land Pattern
Power Dissipation
900mW
Thermal Resistance
77°C /W
111°C /W
Power Dissipation (SOT-89-5)
1500
1200
900
600
300
0
1300mW
On Boarad
900mW
(High wattage)
On Boarad
(Standard)
0
25
50
75
100
125
150
Temperature Topt(°C)
4
R1172x
Power Dissipation (HSON-6)
Power dissipation depends on mounting conditions. The data below is an example.
Measurement Conditions
Standard Land Pattern
Mounting on board
Board Material
Board Dimensions
Wiring Ratio
Wind velocity=0m/s
Glass Epoxy Resin (Double Layers)
40mm×40mm×1.6mm
50%
Measurement Result
(Topt=25°C, Tjmax=125°C)
Standard Land Pattern
Power Dissipation
900mW
Thermal Resistance
111°C/W
Power Dissipation (HSON-6)
1000
800
600
400
200
0
0
25
50
75
100
125
150
Temperature Topt(°C)
5
R1172x
Power Dissipation (HSOP-6J)
Measurement Conditions
High PD Land Pattern
Standard Land Pattern
Environment
Board Material
Board Dimensions
Wiring Ratio
Mounting on Board (Wind velocity=0m/s) Mounting on Board (Wind velocity=0m/s)
Glass Epoxy Resin (Double Layer type)
50mm×50mm×1.6mm
90%
Glass Epoxy Resin (Double Layer type)
50mm×50mm×1.6mm
50%
Thermal via hole
Diameter: 0.5mm×24pieces
Diameter: 0.5mm×24pieces
Measurement Result
(Topt=25°C, Tjmax=125°C)
High PD Land Pattern
2000mW
Standard Land Pattern
Power Dissipation
1700mW
Thermal Resistance
50°C /W
59°C /W
Power Dissipation (HSOP-6J)
2500
2000mW
2000
On Boarad
1700mW
(High wattage)
1500
1000
On Boarad
(Standard)
500
0
0
25
50
75
100
125
150
Temperature Topt(°C)
6
R1172x
ELECTRICAL CHARACTERISTICS
• R1172xxxxA
Topt=25°C
Symbol
VIN
Item
Input Voltage
Supply Current
Conditions
Min.
Typ.
Max.
6.0
Unit
V
1.4
ISS
60
100
VIN−VOUT=1.0V, VCE=0V
VIN= 6.0V, VCE=VIN
µA
Istandby Standby Current
0.1
1.0
×1.02
+30
µA
V
VOUT > 1.5V
×0.98
−30
1
VIN−VOUT=1.0V
IOUT=100mA
VOUT
IOUT1
Output voltage
Output Current
VOUT
1.5V
mV
A
=
VIN−VOUT=1.0V
VIN−VOUT=0.3V
1mA
IOUT
=
300mA
15
50
30
−15
=
=
If VOUT 1.1V,then VIN=1.4V
∆VOUT/
∆IOUT
Load regulation
mV
VIN−VOUT=0.3V
1mA
IOUT
1A
=
=
If VOUT 1.1V,then VIN=1.7V
=
VDIF
Dropout Voltage
Line regulation
Refer to Dropout Voltage Characteristics Table by Output Voltage
IOUT=100mA
∆VOUT/
∆VIN
VOUT+0.5V VIN 6.0V
=
=
0.05
0.20
%/V
If VOUT 0.9V,
=
1.4V VIN 6.0V
=
=
f=1kHz (VOUT 4.0V)
=
70
60
f=1kHz (VOUT > 4.0V)
Ripple 0.5Vp-p, IOUT=100mA
VIN−VOUT=1.0V
RR
Ripple Rejection
dB
If VOUT
1.2V, VIN−VOUT=1.5V
=
∆VOUT/
∆Topt
Output Voltage
Temperature Coefficient
IOUT=100mA
±100
ppm/°C
−40°C Topt 85°C
=
=
ILIM
RPU
Short Current Limit
250
5.0
mA
MΩ
V
VOUT=0V
1.9
1.0
0.0
15.0
6.0
CE
Pull-up resistance for
pin
VCEH
VCEL
CE
CE
Input Voltage "H"
Input Voltage "L"
0.4
V
Thermal Shutdown Detector
Threshold Temperature
TTSD
Junction Temperature
150
°C
Thermal Shutdown
Released Temperature
TTSR
Junction Temperature
BW=10Hz to 100kHz
120
30
°C
en
Output Noise
µVrms
7
R1172x
• R1172xxxxB/D
Topt=25°C
Symbol
Item
Conditions
Min.
Typ.
Max.
6.0
Unit
VIN
ISS
Input Voltage
Supply Current
1.4
V
60
100
1.0
VIN−VOUT=1.0V, VCE=VIN
VIN= 6.0V, VCE=GND
µA
µA
V
Istandby Standby Current
0.1
>
VOUT
1.5V
1.5V
×0.98
−30
1
×1.02
+30
VIN−VOUT=1.0V
IOUT=100mA
=
=
VOUT
IOUT
Output voltage
Output Current
VOUT
mV
A
VIN−VOUT=1.0V
VIN−VOUT=0.3V
1mA
IOUT
=
300mA
15
50
30
−15
=
=
If VOUT 1.1V,then VIN=1.4V
∆VOUT/
∆IOUT
Load regulation
mV
VIN−VOUT=0.3V
1mA
IOUT
1A
=
=
If VOUT 1.1V,then VIN=1.7V
=
VDIF
Dropout Voltage
Line regulation
Refer to Dropout Voltage Characteristics Table by Output Voltage
IOUT=100mA
∆VOUT/
∆VIN
VOUT+0.5V VIN 6.0V
=
=
0.05
0.20
%/V
If VOUT 0.9V,
=
1.4V VIN 6.0V
=
=
70
60
f=1kHz (VOUT 4.0V)
=
f=1kHz (VOUT > 4.0V)
Ripple 0.5Vp-p, IOUT=100mA
VIN−VOUT=1.0V
RR
Ripple Rejection
dB
If VOUT
1.2V, VIN−VOUT=1.5V,
=
IOUT=100mA
∆VOUT/
∆Topt
Output Voltage
Temperature Coefficient
IOUT=100mA
±100
ppm/°C
−40°C Topt 85°C
=
=
ILIM
RPD
Short Current Limit
250
5.0
mA
MΩ
V
VOUT=0V
Pull-down resistance for CE pin
CE Input Voltage "H"
CE Input Voltage "L"
1.9
1.0
0.0
15.0
6.0
VCEH
VCEL
0.4
V
Thermal Shutdown Detector
Threshold Temperature
TTSD
Junction Temperature
150
°C
Thermal Shutdown
Released Temperature
TTSR
Junction Temperature
BW=10Hz to 100kHz
120
30
°C
en
Output Noise
µVrms
8
R1172x
• Dropout Voltage by Output Voltage
(Topt=25°C)
Dropout Voltage (V)
Output Voltage VOUT (V)
IOUT=300mA
IOUT=1A
Typ.
0.33
0.22
0.18
0.10
0.05
Max.
0.57
0.47
0.32
0.15
0.10
Typ.
0.72
0.64
0.56
0.32
0.18
<
0.8 VOUT < 0.9
=
<
0.9 VOUT < 1.0
=
<
1.0 VOUT < 1.5
=
<
1.5 VOUT < 2.6
=
<
2.6
VOUT
=
Technical Notes on External Components and Typical Application
Phase Compensation
In these ICs, phase compensation is made with the output capacitor for securing stable operation even if the
load current is varied. For this purpose, use as much as 10µF Capacitor as C2 Recommendation value is as
follows:
Output Voltage C2 recommendation value
Components Recommendation
VOUT<1.0V
Tantalum 4.7µF or more
Kyocera 4.7µF (1608)
Part Number : CM105X5R475M06AB
Murata 4.7µF (1608)
Part Number : GRM188R60J475KE19B
<
<
1.0
VOUT
3.3V
=
Ceramic 4.7µF or more
=
Murata 10µF (1608)
Part Number : GRM188B30G106ME46B
Kyocera 4.7µF (thin 2012)
3.3V<VOUT
Part Number : CT21X5R475M06AB
Ceramic 4.7µF or more
Murata 10µF (2012)
Part Number : GRM21BB30J106K
If you use a tantalum type capacitor and ESR value of the capacitor is large, output might be unstable.
Evaluate your circuit with considering frequency characteristics.
Depending on the capacitor size, manufacturer, and part number, the bias characteristics and temperature
characteristics are different. Evaluate the circuit with actual using capacitors.
Mounting on PCB
Make VDD and GND lines sufficient. If their impedance is high, a current flows, the noise picked up or unstable
operation may result. Further use a 4.7µF or more value as C1 between VDD pin and GND pin as close as
possible.
Set an Output capacitor between VOUT pin and GND pin for phase compensation as close as possible.
(Refer to the example of typical application)
VDD
OUT
VIN
C1
IOUT
GND
C2
R1172
SERIES
※1
CE
R1172xxx1A
CE = GND:
R1172xxx1B:
CE = VDD
※1
V
Example of the typical application of R1172x
9
R1172x
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Output Current (Topt=25°C)
R1172x081x
R1172x151x
0.9
0.8
0.7
0.6
0.5
0.4
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VDD=1.4V
VDD=1.5V
VDD=1.6V
VDD=2.0V
VDD=2.8V
VDD=1.8V
VDD=2.5V
VDD=3.5V
0.3
0.2
0.1
0.0
0
0
0
500
1000
1500
2000
0
500
1000
1500
2000
Output Current IOUT(mA)
Output Current IOUT(mA)
R1172x301x
R1172x401x
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
V
V
DD=3.3V
DD=4.0V
DD=5.0V
V
V
V
DD=4.3V
DD=5.0V
DD=6.0V
500
1000
1500
2000
0
500
1000
1500
2000
Output Current IOUT(mA)
Output Current IOUT(mA)
R1172x501x
6.0
5.0
4.0
3.0
2.0
1.0
0.0
V
V
DD=5.3V
DD=6.0V
500
1000
1500
2000
Output Current IOUT(mA)
10
R1172x
2) Output Voltage vs. Input Voltage (Topt=25°C)
R1172x081x
R1172x151x
1.2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.8
0.6
I
I
I
I
OUT=1mA
I
I
I
I
OUT=1mA
0.4
0.2
0.0
OUT=50mA
OUT=99mA
OUT=300mA
OUT=50mA
OUT=99mA
OUT=300mA
0
0
0
1
1
1
2
3
4
5
6
6
6
0
1
2
3
4
5
6
Input Voltage VIN(V)
Input Voltage VIN(V)
R1172x301x
R1172x401x
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
I
I
I
OUT=1mA
I
I
I
I
OUT=1mA
OUT=50mA
OUT=99mA
OUT=300mA
OUT=50mA
OUT=99mA
OUT=300mA
2
3
4
5
0
1
2
3
4
5
6
Input Voltage VIN(V)
Input Voltage VIN(V)
R1172x501x
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
I
I
I
OUT=1mA
OUT=50mA
OUT=99mA
OUT=300mA
2
3
4
5
Input Voltage VIN(V)
11
R1172x
3) Supply Current vs. Input Current (Topt=25°C)
R1172x081x
R1172x151x
70
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
0
1
2
3
4
5
6
0
0
0
1
1
1
2
3
4
5
5
5
6
6
6
Input Voltage VIN(V)
Input Voltage VIN(V)
R1172x301x
R1172x401x
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
2
3
4
0
1
2
3
4
5
6
Input Voltage VIN(V)
Input Voltage VIN(V)
R1172x501x
70
60
50
40
30
20
10
0
2
3
4
Input Voltage VIN(V)
12
R1172x
4) Output Voltage vs. Temperature (IOUT=100mA)
R1172x081x
R1172x151x
V
IN=1.8V
VIN=2.5V
0.83
0.82
0.81
0.80
0.79
0.78
0.77
0.76
1.53
1.52
1.51
1.50
1.49
1.48
1.47
1.46
-50 -25
0
25
50
75
100
-50 -25
0
25
50
75
100
Temperature Topt(°C)
Temperature Topt(°C)
R1172x301x
R1172x501x
V
IN=4.0V
VIN=6.0V
3.06
3.04
3.02
3.00
2.98
2.96
2.94
2.92
5.02
5.00
4.98
4.96
4.94
4.92
4.90
4.88
-50 -25
0
25
50
75
100
-50 -25
0
25
50
75
100
Temperature Topt(°C)
Temperature Topt(°C)
5) Supply Current vs. Temperature
R1172x081x
R1172x151x
V
IN=1.8V
VIN=2.5V
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
-50 -25
0
25
50
75
100
-50 -25
0
25
50
75
100
Temperature Topt(°C)
Temperature Topt(°C)
13
R1172x
R1172x301x
R1172x501x
V
IN=4.0V
VIN=6.0V
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
-50 -25
0
25
50
75
100
-50 -25
0
25
50
75
100
Temperature Topt(°C)
Temperature Topt(°C)
6) Dropout Voltage vs. Output Current
R1172x081x
R1172x091x
800
700
600
500
400
300
200
100
0
700
600
500
400
300
200
100
0
85°C
25°C
-40°C
85°C
25°C
-40°C
0
200
400
600
800
1000
0
200
400
600
800
1000
Output Current IOUT(mA)
Output Current IOUT(mA)
R1172x101x
R1172x151x
600
500
400
300
200
100
0
400
350
300
250
200
150
100
50
85°C
25°C
-40°C
85°C
25°C
-40°C
0
0
200
400
600
800
1000
0
200
400
600
800
1000
Output Current IOUT(mA)
Output Current IOUT(mA)
14
R1172x
R1172x301x
R1172x501x
200
180
160
140
120
100
80
250
200
150
100
50
60
85°C
25°C
-40°C
85°C
25°C
40
20
-40°C
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
Output Current IOUT(mA)
Output Current IOUT(mA)
7) Dropout Voltage vs. Set Output Voltage
8) 0.8V Output type, Operating Input Voltage Range
R1172xxx1x
R1172x081x
800
1.8
100mA
200mA
700
Operating Input Voltage Range
1.6
400mA
600mA
600
500
400
300
200
100
0
800mA
1000mA
1.4
1.2
1.0
0.8
0
1
2
3
4
5
0
200
400
600
800
1000
Set Output Voltage VREG(V)
Output Current IOUT(mA)
9) Ripple Rejection vs. Input Bias
R1172x301x
R1172x301x
V
IN=4.0VDC+0.5Vp-p,IOUT=1mA
VIN=4.0VDC+0.2Vp-p,IOUT=1mA
90
80
70
60
90
80
70
60
50
40
30
20
10
0
50
40
30
20
10
0
200Hz
1kHz
10kHz
1000kHz
200Hz
1kHz
10kHz
1000kHz
3.0
3.1
3.2
3.3
3.4
3.5
3.0
3.1
3.2
3.3
3.4
3.5
Input Voltage VIN(V)
Input Voltage VIN(V)
15
R1172x
R1172x301x
R1172x301x
V
IN=4.0VDC+0.2Vp-p,IOUT=10mA
V
IN=4.0VDC+0.5Vp-p,IOUT=10mA
90
80
70
60
90
80
70
60
50
40
30
20
10
0
50
40
30
20
10
0
200Hz
1kHz
10kHz
1000kHz
200Hz
1kHz
10kHz
1000kHz
3.0
3.1
3.2
3.3
3.4
3.5
3.0
3.1
3.2
3.3
3.4
3.5
Input Voltage VIN(V)
Input Voltage VIN(V)
R1172x301x
R1172x301x
V
IN=4.0VDC+0.2Vp-p,IOUT=100mA
V
IN=4.0VDC+0.5Vp-p,IOUT=100mA
90
80
70
60
90
80
70
60
200Hz
1kHz
10kHz
1000kHz
50
40
30
20
10
0
50
40
30
20
10
0
200Hz
1kHz
10kHz
1000kHz
3.0
3.1
3.2
3.3
3.4
3.5
3.0
3.1
3.2
3.3
3.4
3.5
Input Voltage VIN(V)
Input Voltage VIN(V)
10) Ripple Rejection vs. Frequency
R1172x081x
R1172x101x
VIN=1.8VDC+0.5Vp-p,
VIN=2.0VDC+0.5Vp-p,
COUT=Tantalum 0.47µF
COUT=Ceramic 0.47µF
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
I
I
I
OUT=1mA
I
I
I
OUT=1mA
OUT=30mA
OUT=100mA
OUT=30mA
OUT=100mA
0.1
1
10
100
0.1
1
10
100
Frequency f(kHz)
Frequency f(kHz)
16
R1172x
R1172x301x
R1172x401x
VIN=4.0VDC+0.5Vp-p,
VIN=5.0VDC+0.5Vp-p,
COUT=Ceramic 0.47µF
COUT=Ceramic 0.47µF
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
I
I
I
OUT=1mA
I
I
I
OUT=1mA
OUT=30mA
OUT=100mA
OUT=30mA
OUT=100mA
0.1
1
10
100
0.1
1
10
100
Frequency f(kHz)
Frequency f(kHz)
R1172x451x
R1172x501x
VIN=5.5VDC+0.5Vp-p,
VIN=6.0VDC+0.5Vp-p,
COUT=Ceramic 0.47µF
COUT=Ceramic 0.47µF
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
I
I
I
OUT=1mA
I
I
I
OUT=1mA
OUT=30mA
OUT=100mA
OUT=30mA
OUT=100mA
0.1
1
10
100
0.1
1
10
100
Frequency f(kHz)
Frequency f(kHz)
11) Line Transient Response (Tr = Tf =5µs, IOUT=100mA)
R1172x081x
R1172x101x
C
OUT=Tantalum 4.7µF
COUT=Ceramic 4.7µF
4
3
2
4
3
2
0.90
0.88
0.86
0.84
1.10
Input Voltage
1.08
1.06
1.04
Input Voltage
1
0
1
0
0.82
0.80
1.02
1.00
Output Voltage
0.78
0.76
0.98
0.96
Output Voltage
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
Time T(µs)
Time T(µs)
17
R1172x
R1172x301x
R1172x501x
C
OUT=Ceramic 4.7µF
COUT=Ceramic 4.7µF
6
5
4
7
6
5
3.15
3.12
3.09
3.06
5.15
5.12
5.09
5.06
Input Voltage
Input Voltage
3
2
1
0
4
3
2
1
0
3.03
3.00
5.03
5.00
2.97
2.94
4.97
4.94
Output Voltage
Output Voltage
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
Time T(µs)
Time T(µs)
12) Load Transient Response (Tr=Tf=500ns)
R1172x081x
R1172x081x
V
IN=1.8V,CIN=COUT= Tantalum 4.7µF
VIN=1.8V,CIN=COUT= Tantalum 4.7µF
1.04
0.98
0.92
0.86
0.80
0.74
1.00
0.96
0.92
0.88
0.84
0.80
600
400
150
100
Output Current
Output Current
Output Voltage
200
0
50
0
Output Voltage
0.68
0.76
0
10 20 30 40 50 60 70 80 90 100
0
2
4
6
8
10 12 14 16 18 20
Time T(µs)
Time T(µs)
R1172x081x
R1172x081x
V
IN=1.8V,CIN=Tantalum 4.7µF,
C
OUT=Tantalum 10µF
V
IN=1.8V,CIN=COUT= Tantalum 4.7µF
1.00
0.96
0.92
0.88
0.84
0.80
1.00
0.96
0.92
0.88
0.84
0.80
40
20
0
40
20
0
Output Current
Output Current
Output Voltage
Output Voltage
0.76
0.76
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
Time T(µs)
Time T(µs)
18
R1172x
R1172x101x
R1172x101x
V
IN=2.0V,CIN=Ceramic 4.7µF,
C
OUT=Ceramic 10µF
V
IN=2.0V,CIN=COUT= Ceramic 4.7µF
1.4
1.3
1.2
1.1
1.0
0.9
1.4
1.3
1.2
1.1
1.0
0.9
600
400
600
400
Output Current
Output Voltage
Output Current
Output Voltage
200
0
200
0
0.8
0.8
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
Time T(µs)
Time T(µs)
R1172x101x
R1172x101x
V
IN=2.0V,CIN=Ceramic 4.7µF,
OUT=Ceramic 10µF
C
V
IN=2.0V,CIN=COUT= Ceramic 4.7µF
1.20
1.16
1.12
1.08
1.04
1.00
1.20
1.16
1.12
1.08
1.04
1.00
150
100
150
100
Output Current
Output Voltage
Output Current
Output Voltage
50
0
50
0
0.96
0.96
0
4
8
12 16 20 24 28 32 36 40
0
2
4
6
8
10 12 14 16 18 20
Time T(µs)
Time T(µs)
R1172x101x
R1172x101x
V
IN=2.0V,CIN=Ceramic 4.7µF,
C
OUT=Ceramic 10µF
V
IN=2.0V,CIN=COUT= Ceramic 4.7µF
1.20
1.15
1.10
1.05
1.00
0.95
1.20
1.15
1.10
1.05
1.00
0.95
40
20
0
40
20
0
Output Current
Output Voltage
Output Current
Output Voltage
0.90
0.90
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
Time T(µs)
Time T(µs)
19
R1172x
R1172x301x
R1172x301x
VIN=4.0V,CIN=Ceramic 4.7µF,
COUT=Ceramic 10µF
V
IN=4.0V,CIN=COUT= Ceramic 4.7µF
3.8
3.6
3.4
3.2
3.0
2.8
600
400
3.8
3.6
3.4
3.2
3.0
2.8
600
400
Output Current
Output Voltage
Output Current
Output Voltage
200
0
200
0
2.6
2.6
0
40 80 120 160 200 240 280 320 360 400
0
40 80 120 160 200 240 280 320 360 400
Time T(µs)
Time T(µs)
R1172x301x
R1172x301x
V
IN=4.0V,CIN=Ceramic 4.7µF,
OUT=Ceramic 10µF
C
V
IN=4.0V,CIN=COUT= Ceramic 4.7µF
3.20
3.16
3.12
3.08
3.04
3.00
3.20
3.16
3.12
3.08
3.04
3.00
150
150
100
50
0
100
50
0
Output Current
Output Voltage
Output Current
Output Voltage
2.96
2.96
0
4
8
12 16 20 24 28 32 36 40
0
2
4
6
8
10 12 14 16 18 20
Time T(µs)
Time T(µs)
R1172x301x
R1172x301x
V
IN=4.0V,CIN=Ceramic 4.7µF,
C
OUT=Ceramic 10µF
V
IN=4.0V,CIN=COUT= Ceramic 4.7µF
3.20
3.20
40
40
20
0
3.15
3.10
3.05
3.00
2.95
20
0
3.15
3.10
3.05
3.00
2.95
Output Current
Output Current
Output Voltage
Output Voltage
2.90
2.90
0
40 80 120 160 200 240 280 320 360 400
0
40 80 120 160 200 240 280 320 360 400
Time T(µs)
Time T(µs)
20
R1172x
R1172x501x
R1172x501x
V
IN=6.0V,CIN=COUT= Ceramic 4.7µF
V
IN=6.0V,CIN=COUT= Ceramic 4.7µF
6.00
5.75
5.50
5.25
5.00
4.75
5.20
5.16
5.12
5.08
5.04
5.00
600
400
150
100
Output Current
Output Voltage
Output Current
200
0
50
0
Output Voltage
4.50
4.96
0
2
4
6
8
10 12 14 16 18 20
0
40 80 120 160 200 240 280 320 360 400
Time T(µs)
Time T(µs)
R1172x501x
V
IN=6.0V,CIN=COUT= Ceramic 4.7µF
5.20
5.15
5.10
5.05
5.00
4.95
40
20
0
Output Current
Output Voltage
4.90
0
40 80 120 160 200 240 280 320 360 400
Time T(µs)
13) Turn-on speed with CE pin control
R1172x081x
R1172x501x
V
IN=1.8V,CIN=COUT= Tantalum 4.7µF
VIN=6.0V,CIN=COUT= Ceramic 4.7µF
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.6
1.2
0.8
0.4
0.0
10
8
8
6
4
6
4
2
0
2
0
I
I
I
OUT=0mA
OUT=100mA
OUT=300mA
I
I
I
OUT=0mA
OUT=100mA
OUT=300mA
V
IN(V)
260
V
CE
80
-20
0
20 40 60
100 120 140 160 180
-40
0
60
160
360
Time T(µs)
Time T(µs)
21
R1172x
14) Turn-off speed with CE pin control
R1172x081D
R1172x501D
V
IN=1.8V,CIN=COUT= Tantalum 4.7µF
V
IN=6.0V,CIN=COUT= Tantalum 4.7µF
2.0
1.8
1.6
1.4
2.0
1.6
1.2
0.8
14
12
10
8
8
6
4
2
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.4
0.0
6
4
2
0
I
I
I
OUT=0mA
OUT=100mA
OUT=300mA
I
I
I
OUT=0mA
OUT=100mA
OUT=300mA
V
IN(V)
2.8
VIN(V)
0
-0.4
0
0.6
1.6
3.6
-0.2
0
0.2
0.6
1.0
1.4
1.8
Time T(ms)
Time T(ms)
15) Inrush Current (IOUT=100mA, CIN=none)
R1172x081x
R1172x081x
V
IN=2.0V,COUT= Tantalum 4.7µF
V
IN=2.0V,COUT= Tantalum 10µF
2.4
1.6
0.8
0.0
2.4
1.6
0.8
0.0
CE Input Voltage
CE Input Voltage
Output Voltage
Output Voltage
600
400
200
600
400
200
0
0
Inrush Current
Inrush Current
-40
0
40
80
120
160
-40
0
40
80
120
160
Time T(us)
Time T(us)
22
R1172x
R1172x301x
R1172x301x
VIN=4.0V,COUT= Ceramic 4.7µF
VIN=4.0V,COUT= Ceramic 10µF
5
4
5
4
CE Input Voltage
CE Input Voltage
3
2
1
3
2
1
Output Voltage
Output Voltage
0
0
600
400
600
400
Inrush Current
Inrush Current
200
0
200
0
-40
0
40
80
120
160
-40
0
40
80
120
160
Time T(us)
Time T(us)
R1172x501x
R1172x501x
VIN=6.0V,COUT= Ceramic 4.7µF
VIN=6.0V,COUT= Ceramic 10µF
8
8
CE Input Voltage
CE Input Voltage
6
4
6
4
Output Voltage
Output Voltage
2
0
2
0
600
400
200
600
400
200
Inrush Current
Inrush Current
0
0
-40
0
40
80
120
160
-40
0
40
80
120
160
Time T(us)
Time T(us)
23
R1172x
16) Stable Area: ESR limit vs. Load current 0.8V to 3.3V Output type: COUT=4.7µF (Kyocera CM105X5R475M06AB)
5.0V Output type: COUT=4.7
µ
F(Kyocera CT21X5R475K06AB)
Measurement Conditions
⋅ VIN=VOUT+1V
⋅ Freguency=10Hz to 1MHz
⋅ Topt=25°C
OUT
CE
V
R1172xxx1B
COUT
Spectrum
Analyzer
S.A
IN
V
GND
ESR
CIN
VIN
IOUT
As an output capacitor for this IC, Ceramic capacitor is recommendable. However, other low ESR type
capacitor can be used with this IC.
For your reference, noise level is tested, and if the noise level is 40µV or less than 40µV, the ESR values are
plotted as stable area. Upper limit is described in the next five graphs, or ESR vs. Output Current. (Hatched area
is the stable area.)
R1172x081x
R1172x081x
VIN=1.4V to 6.0V,
V
IN=1.4V to 6.0V, CIN=Ceramic 4.7µF,
C
IN=COUT=Ceramic 4.7µF
COUT=Ceramic 10µF
100
10
100
10
Topt=85°C
Topt=85°C
Topt=-40°C
Topt=-40°C
1.0
1.0
0.1
0.1
0.01
0.01
0
200
400
600
800 1000
0
200
400
600
800 1000
Load Current IOUT(mA)
Load Current IOUT(mA)
24
R1172x
R1172x101x
R1172x301x
VIN=1.4V to 6.0V,
VIN=3.1V to 6.0V,
C
IN=COUT=Ceramic 4.7µF
CIN=COUT=Ceramic 4.7µF
100
10
100
10
Topt=85°C
Topt=-40°C
Topt=85°C
Topt=-40°C
1.0
1.0
0.1
0.1
0.01
0.01
0
200
400
600
800 1000
0
200
400
600
800
1000
Load Current IOUT(mA)
Load Current IOUT(mA)
R1172x501x
VIN=5.3V to 6.0V,
C
IN=COUT=Ceramic 4.7µF
100
10
Topt=85°C
Topt=-40°C
1.0
0.1
0.01
0
200
400
600
800 1000
Load Current IOUT(mA)
25
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