R3111N541B-TR-F [RICOH]
Power Supply Support Circuit, Fixed, 1 Channel, CMOS, PDSO5, LEAD FREE, SOT-23, 5 PIN;型号: | R3111N541B-TR-F |
厂家: | RICOH ELECTRONICS DEVICES DIVISION |
描述: | Power Supply Support Circuit, Fixed, 1 Channel, CMOS, PDSO5, LEAD FREE, SOT-23, 5 PIN 光电二极管 |
文件: | 总27页 (文件大小:376K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
R3111x SERIES
LOW VOLTAGE DETECTOR
OUTLINE
NO.EA-056-091102
The R3111x series are CMOS-based voltage detector ICs with high detector threshold accuracy and ultra-low
supply current, which can be operated at an extremely low voltage and is used for system reset as an example.
Each of these ICs consists of a voltage reference unit, a comparator, resistors for detector threshold setting,
an output driver and a hysteresis circuit. The detector threshold is fixed with high accuracy internally and does
not require any adjustment.
Three output types, Nch open drain “L” type, Nch open drain “H” type and CMOS type are available.
The R3111x Series are operable at a lower voltage than that for the Rx5VL series, and can be driven by a
single battery.
Seven types of packages, TO-92, SOT-89, SOT-23-3, SOT-23-5, SC-82AB, SC-88A and SON1612-6 are
available.
FEATURES
• Supply Current......................................................................Typ. 0.8μA (-VDET=1.5V, VDD=-VDET−0.1V)
• Operating Voltage Range......................................................0.7V to 10.0V (Topt=25°C)
• Detector Threshold Range....................................................0.9V to 6.0V
• Detector Threshold Accuracy................................................±2.0%
• Temperature-Drift Coefficient of Detector Threshold ............Typ. ±100ppm/°C
• Output Types.........................................................................Nch Open Drain “L”, Nch Open Drain “H”, and
CMOS
• Packages ..............................................................................TO-92, SOT-89, SOT-23-3, SOT-23-5,
SC-82AB, SC-88A, SON1612-6
APPLICATIONS
• CPU and Logic Circuit Reset
• Battery Checker
• Window Comparator
• Wave Shaping Circuit
• Battery Back-up Circuit
• Power Failure Detector
1
R3111x
BLOCK DIAGRAMS
R3111xxxxA
R3111xxxxB
DD
V
DD
V
OUT
GND
OUT
GND
Vref
Vref
R3111xxxxC
DD
V
OUT
GND
Vref
2
R3111x
SELECTION GUIDE
The package type, the detector threshold, the output type and the taping type for the ICs can be selected at
the users’ request. The selection can be made with designating the part number as shown below;
R3111xxxxx-xx-x ← Part Number
↑ ↑ ↑ ↑
a b c d
↑
e
↑
f
Code
Contents
Designation of Package Type;
R3111Dxx1x: SON1612-6
R3111Exx1x: TO-92
R3111Hxx1x: SOT-89
R3111Nxx1x: SOT-23-5
R3111Nxx2x: SOT-23-3
R3111Qxx1x: SC-82AB
R3111Qxx2x: SC-88A
a
Setting Detector Threshold (-VDET);
Stepwise setting with a step of 0.1V in the range of 0.9V to 6.0V is possible.
b
c
Designation of Package Type
1: except SOT-23-3, SC-88A
2: SOT-23-3, SC-88A
Designation of Output Type;
A: Nch Open Drain (Output "L" at VDD=-VDET)
B: Nch Open Drain (Output "H" at VDD=-VDET)
C: CMOS (Output "L" at VDD=-VDET)
d
Designation of Packing or Taping Type ;
Ex.TO-92: TZ, SOT-89: T1, SOT-23-3, SOT-23-5, SC-82AB, SC-88A, SON1612-6: TR
prescribed as standard directions.
(Refer to Taping Specifications.) Antistatic bag for TO-92: C
e
f
Designation of Composition of pin plating
-F: Lead free solder plating
(TO-92, SOT-89, SOT-23-3, SOT-23-5, SC-82AB, SC-88A, SON1612-6)
3
R3111x
PIN CONFIGURATIONS
z TO-92
z SOT-89
z SOT-23-3
z SOT-23-5
3
5
4
(mark side)
(mark side)
(mark side)
(mark side)
3
1
2
1
2
1
2
3
3
1
2
z SC-82AB
z SC-88A
z SON1612-6
5
4
4
3
6
1
5
4
(mark side)
(mark side)
(mark side)
2
1
1
2
3
2
3
PIN DESCRIPTIONS
z TO-92
z SOT-89
z SOT-23-3
z SOT-23-5
Pin No.
Symbol
VDD
Pin No.
Symbol
OUT
Pin No.
Symbol
OUT
Pin No.
Symbol
OUT
VDD
1
2
3
1
2
3
1
2
3
1
2
3
4
5
GND
OUT
VDD
GND
VDD
GND
GND
NC
NC
z SC-82AB
z SC-88A
z SON1612-6
Pin No.
Symbol
OUT
VDD
Pin No.
Symbol
OUT
NC
Pin No.
Symbol
OUT
VDD
1
2
3
4
1
2
3
4
5
1
2
3
4
5
6
NC
VDD
GND
NC
GND
NC
GND
VDD
NC
4
R3111x
ABSOLUTE MAXIMUM RATINGS
Symbol
Item
Rating
Unit
V
VDD
Supply Voltage
12
VOUT1
VOUT2
IOUT
Output Voltage (CMOS)
V
VSS−0.3 to VDD+0.3
Output Voltage (Nch)
V
VSS−0.3 to 12
70
Output Current
mA
Power Dissipation (TO-92)*
Power Dissipation (SOT-89)*
Power Dissipation (SOT-23-3)*
Power Dissipation (SOT-23-5)*
Power Dissipation (SC-82AB)*
Power Dissipation (SC-88A)*
Power Dissipation (SON1612-6)*
Operating Temperature Range
Storage Temperature Range
Lead temperature (Soldering)
300
900
420
PD
mW
420
380
380
500
Topt
Tstg
−40 to 85
−55 to 125
°C
°C
Tsolder
260°C, 10s
* ) For Power Dissipation, please refer to PACKAGE INFORMATION.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the
permanent damages and may degrade the life time and safety for both device and system using the device
in the field. The functional operation at or over these absolute maximum ratings is not assured.
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
5
R3111x
ELECTRICAL CHARACTERISTICS
• R3111x09xA/C
Topt=25°C
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
V
-VDET
Detector Threshold
0.882 0.900 0.918
0.027 0.045 0.063
VHYS
Detector Threshold Hysteresis
V
VDD=0.80V
VDD=2.90V
0.8
0.9
2.4
2.7
ISS
Supply Current
μA
VDDH
Maximum Operating Voltage
10
V
0.55
0.65
0.70
0.80
Topt=25°C
Note1
Minimum Operating Voltage∗
VDDL
V
−40°C Topt 85°C
Nch
VDS=0.05V,VDD=0.70V
VDS=0.50V,VDD=0.85V
0.01
0.05
0.05
0.50
mA
IOUT
tPLH
Output Current (Driver Output Pin)
Pch
mA
μs
1.0
2.0
VDS=−2.1V,VDD=4.5V
Note2
Output Delay Time∗
100
Δ-VDET/
ΔTopt
Detector Threshold Temperature
Coefficient
−40°C Topt 85°C
±100
ppm/°C
• R3111x18xA/C
Topt=25°C
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
V
-VDET
VHYS
Detector Threshold
1.764 1.800 1.836
0.054 0.090 0.126
Detector Threshold Hysteresis
V
VDD=1.70V
VDD=3.80V
0.8
1.0
2.4
3.0
ISS
Supply Current
μA
VDDH
Maximum Operating Voltage
10
V
0.55
0.65
0.70
0.80
Topt=25°C
Note1
Minimum Operating Voltage∗
VDDL
V
−40°C Topt 85°C
Nch
VDS=0.05V, VDD=0.70V
VDS=0.50V, VDD=1.50V
0.01
1.00
0.05
2.00
mA
IOUT
tPLH
Output Current (Driver Output Pin)
Pch
mA
μs
1.0
2.0
VDS=−2.1V,VDD=4.5V
Note2
Output Delay Time∗
100
Δ-VDET/
ΔTopt
Detector Threshold Temperature
Coefficient
−40°C Topt 85°C
±100
ppm/°C
∗Note1:Minimum operating voltage means the value of input voltage when output voltage maintains 0.1V or less. (In
the case of Nch Open Drain Output type, the output pin is pulled up with a resistance of 470k to 5.0V.)
Ω
∗Note2:In the case of CMOS Output type: The time interval between the rising edge of VDD input pulse from 0.7V
to (+VDET)+2.0V and output voltage level becoming to ((+VDET)+2.0V)/2.
In the case of Nch Open Drain Output type: The output pin is pulled up with a resistance of 470kΩ to
5.0V, the time interval between the rising edge of VDD input pulse from 0.7V to (+VDET)+2.0V and output
voltage level becoming to 2.5V.
6
R3111x
• R3111x27xA/C
Topt=25°C
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
V
-VDET
VHYS
Detector Threshold
2.646 2.700 2.754
0.081 0.135 0.189
Detector Threshold Hysteresis
V
VDD=2.60V
VDD=4.70V
0.9
1.1
2.7
3.3
ISS
Supply Current
μA
VDDH
Maximum Operating Voltage
10
V
0.55
0.65
0.70
0.80
Topt=25°C
Note1
Minimum Operating Voltage∗
VDDL
V
−40°C Topt 85°C
=
=
Nch
VDS=0.05V,VDD=0.70V
VDS=0.50V,VDD=1.50V
0.01
1.00
0.05
2.00
mA
IOUT
tPLH
Output Current (Driver Output Pin)
Pch
mA
μs
1.0
2.0
VDS=−2.1V,VDD=4.5V
Note2
Output Delay Time∗
100
Δ-VDET/
ΔTopt
Detector Threshold Temperature
Coefficient
−40°C Topt 85°C
±100
ppm/°C
=
=
• R3111x36xA/C
Topt=25°C
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
V
-VDET
VHYS
Detector Threshold
3.528 3.600 3.672
0.108 0.180 0.252
Detector Threshold Hysteresis
V
VDD= 3.47V
VDD= 5.60V
1.0
1.2
3.0
3.6
ISS
Supply Current
μA
VDDH
Maximum Operating Voltage
10
V
0.55
0.65
0.70
0.80
Topt=25°C
Note1
Minimum Operating Voltage∗
VDDL
V
−40°C Topt 85°C
=
=
Nch
VDS=0.05V,VDD=0.70V
VDS=0.50V,VDD=1.50V
0.01
1.00
0.05
2.00
mA
IOUT
tPLH
Output Current (Driver Output Pin)
Pch
mA
μs
1.0
2.0
VDS=−2.1V,VDD=4.5V
Note2
Output Delay Time∗
100
Δ-VDET/
ΔTopt
Detector Threshold Temperature
Coefficient
−40°C Topt 85°C
±100
ppm/°C
=
=
∗Note1:Minimum operating voltage means the value of input voltage when output voltage maintains 0.1V or less. (In
the case of Nch Open Drain Output type, the output pin is pulled up with a resistance of 470k to 5.0V.)
Ω
∗Note2:In the case of CMOS Output type: The time interval between the rising edge of VDD input pulse from 0.7V
to (+VDET)+2.0V and output voltage level becoming to ((+VDET)+2.0V)/2.
In the case of Nch Open Drain Output type: The output pin is pulled up with a resistance of 470kΩ to
5.0V, the time interval between the rising edge of VDD input pulse from 0.7V to (+VDET)+2.0V and output
voltage level becoming to 2.5V.
7
R3111x
• R3111x45xA/C
Topt=25°C
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
V
-VDET
VHYS
Detector Threshold
4.410 4.500 4.590
0.135 0.225 0.315
Detector Threshold Hysteresis
V
VDD=4.34V
VDD=6.50V
1.1
1.3
3.3
3.9
ISS
Supply Current
μA
VDDH
Maximum Operating Voltage
10
V
0.55
0.65
0.70
0.80
Topt=25°C
Note1
Minimum Operating Voltage∗
VDDL
V
−40°C Topt 85°C
Nch
VDS=0.05V, VDD=0.70V
VDS=0.50V, VDD=1.50V
0.01
1.00
0.05
2.00
mA
IOUT
tPLH
Output Current (Driver Output Pin)
Pch
mA
μs
1.5
3.0
VDS=−2.1V,VDD=8.0V
Note2
Output Delay Time∗
100
Δ-VDET/
ΔTopt
Detector Threshold Temperature
Coefficient
−40°C Topt 85°C
±100
ppm/°C
• R3111x54xA/C
Topt=25°C
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
V
-VDET
VHYS
Detector Threshold
5.292 5.400 5.508
0.162 0.270 0.378
Detector Threshold Hysteresis
V
VDD=5.20V
VDD=7.40V
1.2
1.4
3.6
4.2
ISS
Supply Current
μA
VDDH
Maximum Operating Voltage
10
V
0.55
0.65
0.70
0.80
Topt=25°C
Note1
Minimum Operating Voltage∗
VDDL
V
−40°C Topt 85°C
Nch
VDS=0.05V, VDD=0.70V
VDS=0.50V, VDD=1.50V
0.01
1.00
0.05
2.00
mA
Output Current
(Driver Output Pin)
IOUT
tPLH
Pch
mA
μs
1.5
3.0
VDS=−2.1V, VDD=8.0V
Note2
Output Delay Time∗
100
Δ-VDET/
ΔTopt
Detector Threshold Temperature
Coefficient
−40°C Topt 85°C
±100
ppm/°C
∗Note1:Minimum operating voltage means the value of input voltage when output voltage maintains 0.1V or less. (In
the case of Nch Open Drain Output type, the output pin is pulled up with a resistance of 470k to 5.0V.)
Ω
∗Note2:In the case of CMOS Output type: The time interval between the rising edge of VDD input pulse from 0.7V
to (+VDET)+2.0V and output voltage level becoming to ((+VDET)+2.0V)/2.
In the case of Nch Open Drain Output type: The output pin is pulled up with a resistance of 470kΩ to
5.0V, the time interval between the rising edge of VDD input pulse from 0.7V to (+VDET)+2.0V and output
voltage level becoming to 2.5V.
8
R3111x
• R3111Q231B
Topt=25°C
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
V
-VDET
VHYS
Detector Threshold
2.254 2.300 2.346
0.069 0.115 0.161
Detector Threshold Hysteresis
V
VDD=2.2V
VDD=4.3V
0.9
1.1
2.7
3.3
ISS
Supply Current
μA
VDDH
Maximum Operating Voltage
10
V
0.55
0.65
0.70
0.80
Topt=25°C
Note1
Minimum Operating Voltage∗
VDDL
V
−40°C Topt 85°C
=
=
Nch
VDS=0.10V,VDD=6.5V
IOUT
tPLH
Output Current (Driver Output Pin)
2.5
mA
μs
Note2
Output Delay Time∗
100
Δ-VDET/
ΔTopt
Detector Threshold Temperature
Coefficient
−40°C Topt 85°C
±100
ppm/°C
=
=
• R3111Q441B
Topt=25°C
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
V
-VDET
VHYS
Detector Threshold
4.312 4.400 4.488
0.132 0.220 0.308
Detector Threshold Hysteresis
V
VDD=4.24V
VDD=6.4V
1.1
1.3
3.3
3.9
ISS
Supply Current
μA
VDDH
Maximum Operating Voltage
10
V
0.55
0.65
0.70
0.80
Topt=25°C
Note1
Minimum Operating Voltage∗
VDDL
V
−40°C Topt 85°C
=
=
Nch
VDS=0.10V, VDD=6.5V
Output Current
(Driver Output Pin)
Output Delay Time∗
IOUT
tPLH
2.5
mA
μs
Note2
100
Δ-VDET/
ΔTopt
Detector Threshold Temperature
Coefficient
−40°C Topt 85°C
±100
ppm/°C
=
=
∗Note1:Minimum operating voltage means the value of input voltage when output voltage maintains 0.1V or less. (In
the case of Nch Open Drain Output type, the output pin is pulled up with a resistance of 470k to 5.0V.)
Ω
∗Note2:In the case of CMOS Output type: The time interval between the rising edge of VDD input pulse from 0.7V
to (+VDET)+2.0V and output voltage level becoming to ((+VDET)+2.0V)/2.
In the case of Nch Open Drain Output type: The output pin is pulled up with a resistance of 470kΩ to
5.0V, the time interval between the rising edge of VDD input pulse from 0.7V to (+VDET)+2.0V and output
voltage level becoming to 2.5V.
9
R3111x
TIMING CHART
Supply
Released Voltage +VDET
Voltage
Detector Threshold
Hysteresis
Detec tor T hr es hol d
Hysteresis
Detec tor Thr eshol d
Hysteresis
Detector Threshold -VDET
(VDD)
Minimum Operating Voltage VDDL
GND
Pull-up Voltage
Output
Voltage
(VOUT)
GND
tPLH
tPLH
tPLH
R3111xxxxA
R 3111xxxxB
R3111xxxxC
DEFINITION OF OUTPUT DELAY TIME
Output Delay Time (tPLH) is defined as follows:
1. In the case of Nch Open Drain Output:(R3111xxxxA/B)
Under the condition of the output pin (OUT) is pulled up through a resistor of 470kΩ to 5V, the time interval
between the rising edge of VDD pulse from 0.7V to (+VDET)+2.0V and becoming of the output voltage to 2.5V.
2. In the case of CMOS Output:(R3111xxxxC)
The time interval between the rising edge of VDD pulse from 0.7V to (+VDET)+2.0V and becoming of the output
voltage to ((+VDET)+2.0V)/2.
DET
+V +2.0V
DET
+V +2.0V
DET
+V +2.0V
Supply
Supply
Supply
Voltage
DD
(V )
Voltage
DD
(V )
Voltage
DD
(V )
0.7V
GND
0.7V
GND
0.7V
GND
5.0V
2.5V
GND
5.0V
2.5V
GND
DET
+V +2.0V
Output
Voltage
OUT
Output
Voltage
OUT
DET
+V +2.0V
2
Output
(V
)
(V
)
Voltage
GND
OUT
(V
)
PHL
t
PLH
t
PHL
t
PLH
t
PHL
t
PLH
t
Nch Open Drain Output
(R3111xxxxA)
Nch Open Drain Output
(R3111xxxxB)
CMOS Output
(R3111xxxxC)
10
R3111x
11
R3111x
ELECTRICAL CHARACTERISTICS BY DETECTOR THRESHOLD
• R3111x09x to R3111x60x
Detector Threshold
Detector Threshold
Supply Current 1
Supply Current 2
Hysteresis
Part
-VDET[V]
VHYS[V]
[
]
[
]
Number
ISS1 μA
Typ.
ISS2 μA
Typ.
Min.
Typ.
0.900
1.000
1.100
1.200
1.300
1.400
1.500
1.600
1.700
1.800
1.900
2.000
2.100
2.200
2.300
2.400
2.500
2.600
2.700
2.800
2.900
3.000
3.100
3.200
3.300
3.400
3.500
3.600
3.700
3.800
3.900
4.000
4.100
4.200
4.300
4.400
4.500
4.600
4.700
4.800
4.900
5.000
5.100
5.200
5.300
5.400
5.500
5.600
5.700
5.800
5.900
6.000
Max.
Min.
Typ.
0.045
0.050
0.055
0.060
0.065
0.070
0.075
0.080
0.085
0.090
0.095
0.100
0.105
0.110
0.115
0.120
0.125
0.130
0.135
0.140
0.145
0.150
0.155
0.160
0.165
0.170
0.175
0.180
0.185
0.190
0.195
0.200
0.205
0.210
0.215
0.220
0.225
0.230
0.235
0.240
0.245
0.250
0.255
0.260
0.265
0.270
0.275
0.280
0.285
0.290
0.295
0.300
Max.
0.063
0.070
0.077
0.084
0.091
0.098
0.105
0.112
0.119
0.126
0.133
0.140
0.147
0.154
0.161
0.168
0.175
0.182
0.189
0.196
0.203
0.210
0.217
0.224
0.231
0.238
0.245
0.252
0.259
0.266
0.273
0.280
0.287
0.294
0.301
0.308
0.315
0.322
0.329
0.336
0.343
0.350
0.357
0.364
0.371
0.378
0.385
0.392
0.399
0.406
0.413
0.420
Condition
Max.
Condition
Max.
2.7
R3111x09xx
R3111x10xx
R3111x11xx
R3111x12xx
R3111x13xx
R3111x14xx
R3111x15xx
R3111x16xx
R3111x17xx
R3111x18xx
R3111x19xx
R3111x20xx
R3111x21xx
R3111x22xx
R3111x23xx
R3111x24xx
R3111x25xx
R3111x26xx
R3111x27xx
R3111x28xx
R3111x29xx
R3111x30xx
R3111x31xx
R3111x32xx
R3111x33xx
R3111x34xx
R3111x35xx
R3111x36xx
R3111x37xx
R3111x38xx
R3111x39xx
R3111x40xx
R3111x41xx
R3111x42xx
R3111x43xx
R3111x44xx
R3111x45xx
R3111x46xx
R3111x47xx
R3111x48xx
R3111x49xx
R3111x50xx
R3111x51xx
R3111x52xx
R3111x53xx
R3111x54xx
R3111x55xx
R3111x56xx
R3111x57xx
R3111x58xx
R3111x59xx
R3111x60xx
0.882
0.980
1.078
1.176
1.274
1.372
1.470
1.568
1.666
1.764
1.862
1.960
2.058
2.156
2.254
2.352
2.450
2.548
2.646
2.744
2.842
2.940
3.038
3.136
3.234
3.332
3.430
3.528
3.626
3.724
3.822
3.920
4.018
4.116
4.214
4.312
4.410
4.508
4.606
4.704
4.802
4.900
4.998
5.096
5.194
5.292
5.390
5.488
5.586
5.684
5.782
5.880
0.918
1.020
1.122
1.224
1.326
1.428
1.530
1.632
1.734
1.836
1.938
2.040
2.142
2.244
2.346
2.448
2.550
2.652
2.754
2.856
2.958
3.060
3.162
3.264
3.366
3.468
3.570
3.672
3.774
3.876
3.978
4.080
4.182
4.284
4.386
4.488
4.590
4.692
4.794
4.896
4.998
5.100
5.202
5.304
5.406
5.508
5.610
5.712
5.814
5.916
6.018
6.120
0.027
0.030
0.033
0.036
0.039
0.042
0.045
0.048
0.051
0.054
0.057
0.060
0.063
0.066
0.069
0.072
0.075
0.078
0.081
0.084
0.087
0.090
0.093
0.096
0.099
0.102
0.105
0.108
0.111
0.114
0.117
0.120
0.123
0.126
0.129
0.132
0.135
0.138
0.141
0.144
0.147
0.150
0.153
0.156
0.159
0.162
0.165
0.168
0.171
0.174
0.177
0.180
0.9
0.8
2.4
1.0
3.0
3.3
3.6
3.9
VDD=
(-VDET)
−0.10V
0.9
1.0
1.1
2.7
3.0
3.3
1.1
1.2
1.3
VDD=
VDD=
(-VDET)
(-VDET)
−0.13V
+2.0V
VDD=
(-VDET)
−0.16V
VDD=
(-VDET)
1.2
3.6
1.4
4.2
−0.20V
*1) In the case of CMOS output type; when the voltage is forced to VDD from 0.7V to (
+
V
DET
)
+
2.0V, time interval between the rising edge of VDD and the reaching point at
2.0V)/2. In the case of Nch open drain output type : The output pin is pulled up to 5V through 470k , and when the voltage is forced to VDD from 0.7V to
2.0V, time interval between the rising edge of VDD and the reaching point at (( 2.0V)/2.
((
+
V
DET
)
+
Ω
(
+
V
DET
)
+
+VDET)+
*2) VDD value when Output Voltage is equal or less than 0.1V. In the case of Nch open drain output type, the output pin is pulled up to 5V through 470kΩ
resistor.
Condition 1: Topt=25°C
<
<
85°C
Condition 2: −40°C
Topt
=
=
12
R3111x
Output Delay
Time
Minimum
Operating Voltage
Detector Threshold
Temperature Coefficient
Output Current 2 *3
Output Current 1
[
]
[
]
[
]
VDDL[V]
[
]
IOUT1 mA
IOUT2 mA
tPLH μs
Δ-VDET/ΔTopt ppm/°C
Condition Typ.
Condition
Min.
Typ.
Condition
Min.
Typ.
Max.
Typ.
Max.
VDD=
0.05
0.2
0.5
0.85V
VDD=
1.0V
1.0
<A/C version>
Nch
0.01
0.05
VDS=0.05V
VDD=0.7V
2
2
*
*
Condition 1 Condition 1
Nch
VDS=
0.5V
−40°C
=
100 *1
Topt
0.55
0.70
VDD=
1.5V
±100
1.0
2.0
<
85°C
Condition 2 Condition 2
0.65
0.80
<B version>
Nch
2.5
-
VDS=0.10V
VDD=6.5V
*3) Only A/C versions.
13
R3111x
OPERATION
• Operation of R3111xxxxA
DD
V
Comparator
Ra
OUT pin should be pulled-up to
OUT
DD
V
or an external voltage level.
Rb
Rc
Vref
Nch
Tr.1
GND
Block Diagram (R3111xxxxA)
1
2
3
4
5
Step
1
I
2
II
L
3
II
4
II
L
5
I
Released Voltage +VDET
Detector Threshold
Hysteresis
B
A
Comparator (+)
Pin Input Voltage
Detector Threshold
Supply Voltage
-VDET
DD
(V
)
Comparator Output
Tr.1
H
Indefinite
H
Minimum Operating Voltage VDDL
GND
OFF ON Indefinite ON OFF
Output Tr.
Nch OFF ON Indefinite ON OFF
Rb+Rc
Ra+Rb+Rc
Pull-up Voltage
I
DD
×V
Output
Output Voltage
Delay Time
OUT
(V
)
Rb
Ra+Rb
II
DD
×V
PLH
t
GND
Operation Diagram
• Explanation of operation
Step 1. The output voltage is equal to the pull-up voltage.
>
Step 2. At Point “A”, Vref VDD×(Rb+Rc)/(Ra+Rb+Rc) is true, as a result, the output of comparator is reversed
=
from "H" to "L", therefore the output voltage becomes the GND level. The voltage level of Point A means
a detector threshold voltage (−VDET).
Step 3. When the supply voltage is lower than the minimum operating voltage, the operation of the output
transistor becomes indefinite. The output voltage is equal to the pull-up voltage.
Step 4. The output Voltage is equal to the GND level.
<
Step 5. At Point “B”, Vref VDD×Rb/(Ra+Rb) is true, as a result, the output of comparator is reversed from "L" to
=
"H", then the output voltage is equal to the pull-up voltage. The voltage level of Point B means a released
voltage (+VDET).
∗) The difference between a released voltage and a detector threshold voltage is a detector threshold hysteresis.
14
R3111x
• Operation of R3111xxxxB
DD
V
Comparator
Ra
OUT pin should be pulled-up to
OUT
DD
V
or an external voltage level.
Rb
Rc
Vref
Nch
Tr.1
GND
Block Diagram (R3111xxxxB)
1
2
3
Step
1
I
2
II
3
I
Released Voltage +VDET
Detector Threshold
Hysteresis
B
A
Comparator (−)
Pin Input Voltage
Detector Threshold
Supply Voltage
-VDET
DD
(V
)
Comparator Output
Tr.1
L
H
L
Minimum Operating Voltage VDDL
GND
OFF ON OFF
ON OFF ON
Output Tr.
Nch
Rb+Rc
Ra+Rb+Rc
Pull-up Voltage
I
DD
×V
Output
Output Voltage
Delay Time
OUT
(V
)
Rb
Ra+Rb
II
DD
×V
PLH
t
GND
Operation Diagram
• Explanation of operation
Step 1. The output voltage is equal to the GND level.
>
Step 2. At Point “A”, Vref VDD×(Rb+Rc)/(Ra+Rb+Rc) is true, as a result, the output of comparator is reversed
=
from "L" to "H", therefore the output voltage becomes the pull-up voltage. The voltage level of Point A
means a detector threshold voltage (−VDET).
<
Step 3. At Point “B”, Vref VDD×Rb/(Ra+Rb) is true, as a result, the output of comparator is reversed from "H" to
"L", then the output voltage is equal to the GND level. The voltage level of Point B means a released
voltage (+VDET).
∗) The difference between a released voltage and a detector threshold voltage is a detector threshold hysteresis.
15
R3111x
• Operation of R3111xxxxC
DD
V
Comparator
Ra
Pch
Nch
OUT
GND
Rb
Rc
Vref
Tr.1
Block Diagram (R3111xxxxC)
1
2
3
4
5
Step
1
I
2
II
L
3
II
4
II
L
5
I
Released Voltage +VDET
A
Detector Threshold
Hysteresis
B
Comparator (+)
Pin Input Voltage
Detector Threshold -VDET
Supply Voltage
DD
(V
)
Comparator Output
Tr.1
H
Indefinite
H
Minimum Operating Voltage VDDL
OFF ON Indefinite ON OFF
GND
Pch ON OFF Indefinite OFF ON
Nch OFF ON Indefinite ON OFF
Output Tr.
Rb+Rc
×VDD
I
Output
Delay Time
Output Voltage
Ra+Rb+Rc
OUT
(V
)
Rb
Ra+Rb
PLH
t
II
DD
×V
GND
Operation Diagram
• Explanation of operation
Step 1. The output voltage is equal to the supply voltage (VDD).
>
Step 2. At Point “A”, Vref VDD×(Rb+Rc)/(Ra+Rb+Rc) is true, as a result, the output of comparator is reversed
=
from "H" to "L", therefore the output voltage becomes the GND level. The voltage level of Point A
means a detector threshold voltage (−VDET).
Step 3. When the supply voltage is lower than the minimum operating voltage, the operation of the output
transistor becomes indefinite.
Step 4. The output Voltage is equal to the GND level.
<
Step 5. At Point “B”, Vref VDD×Rb/(Ra+Rb) is true, as a result, the output of comparator is reversed from "L" to
=
"H", then the output voltage is equal to the supply voltage (VDD). The voltage level of Point B means a
released voltage (+VDET).
∗) The difference between a released voltage and a detector threshold voltage is a detector threshold hysteresis.
16
R3111x
TEST CIRCUITS
SS
I
5V
DD
V
470kΩ
DD
V
R3111x
Series
IN
V
OUT
V
R3111x
Series
IN
V
OUT
OUT
GND
GND
Supply Current Test Circuit
Detector Threshold Test Circuit
(Pull-up circuit is not necessary for
CMOS Output type.)
DD
V
DS
V
VDD
OUT
I
OUT
I
R3111x
Series
R3111x
Series
IN
V
IN
V
OUT
OUT
DD
V
DS
−V
DS
V
GND
GND
Nch Driver Output Current Test Circuit
Pch Driver Output Current Test Circuit
∗Apply to CMOS Output type only
5V
DET
+V +2.0V
5V
DET
+V +2.0V
IN
R
DD
V
OUT
R
0.7V
GND
470kΩ
OUT
R
0.7V
GND
470kΩ
470kΩ
R3111x
Series
DD
V
R3111x
Series
OUT
V
OUT
V
OUT
OUT
GND
P.G.
P.G.
OUT
C
GND
IN
C
DS
V
DS
V
Output Delay Time Test Circuit (1)
Output Delay Time Test Circuit (2)
(Pull-up circuit is not necessary for
CMOS Output type.)
17
R3111x
TYPICAL CHARACTERISTICS
1) Supply Current vs. Input Voltage
R3111x09xC
R3111x27xC
2.5
2.0
1.5
1.0
Topt=85°C
Topt=85°C
2.0
1.5
25°C
25°C
1.0
-40°C
-40°C
0.5
0.0
0.5
0.0
0
2
4
6
8
10
0
2
4
6
8
10
Input Voltage VIN(V)
Input Voltage VIN(V)
R3111x45xC
2.0
Topt=85°C
25°C
1.5
1.0
0.5
0.0
-40°C
0
2
4
6
8
10
Input Voltage VIN(V)
2) Detector Threshold Hysteresis vs. Temperature
R3111x09xC
R3111x27xC
1.00
2.9
2.8
2.7
0.98
0.96
+VDET
-VDET
0.94
+VDET
0.92
0.90
-VDET
0.88
2.6
2.5
0.86
0.84
-60 -40 -20
0
20 40 60 80 100
-60 -40 -20
0
20 40 60 80 100
Temperature Topt(°C)
Temperature Topt(°C)
18
R3111x
R3111x45xC
4.8
4.7
4.6
+VDET
4.5
4.4
-VDET
-60 -40 -20
0
20 40 60 80 100
Temperature Topt(°C)
3) Output Voltage vs. Input Voltage
R3111x09xC
R3111x09xA
5V Pull-up 470kΩ
1.6
1.4
1.2
1.0
6
5
4
3
2
Topt=-40°C
25°C
0.8
85°C
0.6
25°C
0.4
85°C
Topt=-40°C
1
0
0.2
0.0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
Input Voltage VIN(V)
Input Voltage VIN(V)
R3111x27xC
R3111x27xA
5V Pull-up 470kΩ
4.0
6
3.5
3.0
2.5
2.0
1.5
1.0
5
4
3
2
Topt=-40°C
25°C
85°C
85°C
25°C
Topt=-40°C
1.5
Input Voltage VIN(V)
1
0
0.5
0.0
0
0.5
1
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
Input Voltage VIN(V)
19
R3111x
R3111x45xC
R3111x45xA
5V Pull-up 470kΩ
6
6
5
4
3
2
Topt=-40°C
5
4
3
2
25°C
85°C
85°C
25°C
Topt=-40°C
1
0
1
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Input Voltage VIN(V)
Input Voltage VIN(V)
4) Nch Driver Output Current vs. VDS
R3111x09xC
R3111x09xC
Topt=25°C
Topt=25°C
700
600
300
250
200
150
100
V
DD=0.85V
V
DD=0.8V
0.7V
500
400
300
200
0.7V
50
0
100
0
0
0.2
0.4
DS(V)
0.6
0.8
0
0.02
0.04
0.06
0.08
0.1
V
V
DS(V)
R3111x27xC
R3111x27xC
Topt=25°C
Topt=25°C
20
18
16
14
300
250
200
150
100
V
DD=2.5V
2.0V
V
DD=0.8V
12
10
8
0.7V
6
4
1.5V
50
0
2
0
0
0.5
1
1.5
DS(V)
2
2.5
0
0.02
0.04
0.06
0.08
0.1
V
VDS(V)
20
R3111x
R3111x45xC
R3111x45xC
Topt=25°C
Topt=25°C
60
50
40
30
300
250
200
150
100
V
DD=4.5V
4.0V
V
DD=0.8V
3.5V
3.0V
0.7V
20
10
0
2.5V
2.0V
50
0
1.5V
1.5
0
0.5
1
2
2.5
3
3.5
4
4.5
0
0.02
0.04
0.06
0.08
0.1
VDS(V)
VDS(V)
5) Nch Driver Output Current vs. Input Voltage
R3111x09xC
R3111x27xC
900
14
12
10
800
700
600
Topt=-40°C
25°C
85°C
8
6
4
2
0
500
Topt=-85°C
400
300
25°C
200
100
-40°C
0
0
0.2
0.4
0.6
0.8
1
0
0.5
1
1.5
1
2.5
3
Input Voltage VIN(V)
Input Voltage VIN(V)
R3111x45xC
25
20
15
10
5
Topt=-40°C
25°C
85°C
0
0
1
2
3
4
5
6
Input Voltage VIN(V)
21
R3111x
6) Pch Driver Output Current vs. Input Voltage
R3111x09xC
R3111x27xC
Topt=25°C
Topt=25°C
1.4
3.5
3.0
2.5
2.0
1.5
1.0
1.2
V
DS=0.7V
V
DS=2.1V
1.0
0.8
0.6
0.4
1.5V
1.0V
0.5V
0.5V
0.2
0.0
0.5
0.0
0
2
4
6
8
0
1
2
3
4
5
6
7
Input Voltage VIN(V)
Input Voltage VIN(V)
R3111x45xC
Topt=25°C
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
DS=2.1V
1.5V
1.0V
0.5V
0.5
0.0
0
2
4
6
8
10
Input Voltage VIN(V)
7) Output Delay Time vs. Load Capacitance (Topt=25°C)
R3111x09xA
R3111x27xA
100
10
1
100
10
1
tPLH
tPHL
tPLH
0.1
0.1
tPHL
0.01
0.01
0.001
0.001
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
Load Capacitance COUT(μF)
Load Capacitance COUT(μF)
22
R3111x
R3111x45xA
100
10
1
t
PLH
PHL
0.1
t
0.01
0.001
0.0001
0.001
0.01
0.1
Load Capacitance COUT(μF)
8) Output Delay Time vs. Input Pin Capacitance
R3111x09xA
R3111x27xA
100
100
10
1
10
t
PHL
PLH
1
t
t
PLH
PHL
0.1
0.1
t
0.01
0.01
0.001
0.001
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
Input Pin Capacitance CIN(μF)
Input Pin Capacitance CIN(μF)
R3111x45xA
100
10
1
t
t
PLH
PHL
0.1
0.01
0.001
0.001
0.01
0.1
1
Input Pin Capacitance CIN(μF)
23
R3111x
TYPICAL APPLICATION
• R3111xxxxA CPU Reset Circuit (Nch Open Drain Output)
Case 1.Input Voltage to R3111xxxxA is equal to
Input Voltage to CPU
Case 2.Input Voltage to R3111xxxxA is unequal to
Input Voltage to CPU
VDD
VDD
VDD2
VDD
R
VDD
R
470kΩ
470kΩ
VDD
CPU
VDD
CPU
RESET
R3111xxxxA
Series
R3111xxxxA
Series
RESET
GND
OUT
OUT
GND
GND
GND
• R3111xxxxC CPU Reset Circuit (CMOS Output)
VDD
VDD
VDD
CPU
R3111xxxxC
Series
RESET
GND
OUT
GND
• R3111xxxxA Output Delay Time Circuit 1
• R3111xxxxA Output Delay Time Circuit 2
(Nch Open Drain Output)
(Nch Open Drain Output)
VDD
DD
V
VDD
R
470kΩ
VDD
CPU
DD
V
R2
R1
470kΩ
100kΩ
R3111xxxxA
Series
CPU
RESET
GND
R3111xxxxA
Series
OUT
RESET
GND
DD
V
OUT
GND
GND
• Memory Back-up Circuit
DD
V
CC
V
D1
CC
V
CC
V
CC
V
CC
V
D2
Y1
Y2
Y3
Y4
A
B
C
RAM1
RAM2
RAM3
RAM4
GND CS GND CS GND CS GND CS
GND
DD
V
OUT
R3111xxxxC
Series
GND
24
R3111x
• Voltage level Indicator Circuit (lighted when the power runs out)
(Nch Open Drain Output)
VDD
VDD
R3111xxxxA
Series
OUT
GND
• Detector Threshold Adjustable Circuit
(Nch Open Drain Output)
Adjusted Detector Threshold
VDD
=(−VDET)×(Ra+Rb)/Rb
Ra
Rb
OUT
VDD
C
R3111xxxxA
Series
Hysteresis Voltage
=(VHYS)×(Ra+Rb)/Rb
+
∗) If the value of Ra is set excessively large, voltage
drop may occur caused by the supply current of IC
itself, and detector threshold may vary.
GND
• Window Comparator Circuit
(Nch Open Drain Output)
DET
−V
1
DD
V
DD
V
DET
−V
2
VDD
−V
DET2
R3111xxxxA
Series
WC_OUT
DD
V
OUT
GND
GND
OUT
R3111xxxxA
Series
WC_OUT
−V
DET1
GND
GND
• Over-charge Preventing Circuit
R1
D1
Light
R2
R4
DD
V
R3111xxxxC
Series
R3 OUT
GND
25
R3111x
TECHNICAL NOTES
When R3111xxxxA/B (Nch Open Drain Output Type) is used in Figure A or Figure B, if impedance of Voltage
Supply pin, VDD and VDD of this IC is large, detector threshold level would shift by voltage dropdown caused by
the consumption current of the IC itself. Released voltage may also shift and delay time for start-up might be
generated by this usage.
When R3111xxxxC (CMOS Output Type) is used in Figure A or Figure B, Output level could be unstable by
cross conduction current which is generated at detector threshold level or at released voltage level, therefore, do
not use this IC with the connection in Figure A or Figure B.
The connection in Figure C may cause the oscillation in both R3111xxxxC (CMOS Output) and R3111xxxxA/B
(Nch Open Drain Output), therefore do not use R3111x Series with the connection in Figure C.
DD
V
DD
V
DD
V
R1
R1
R1
DD
V
DD
V
R2
R3111x
Series
R3111x
Series
R3111x
Series
OUT
OUT
OUT
R2
GND
GND
GND
Figure A
Figure B
Figure C
26
1.The products and the product specifications described in this document are subject to change or
discontinuation of production without notice for reasons such as improvement. Therefore, before
deciding to use the products, please refer to Ricoh sales representatives for the latest
information thereon.
2.The materials in this document may not be copied or otherwise reproduced in whole or in part
without prior written consent of Ricoh.
3.Please be sure to take any necessary formalities under relevant laws or regulations before
exporting or otherwise taking out of your country the products or the technical information
described herein.
4.The technical information described in this document shows typical characteristics of and
example application circuits for the products. The release of such information is not to be
construed as a warranty of or a grant of license under Ricoh's or any third party's intellectual
property rights or any other rights.
5.The products listed in this document are intended and designed for use as general electronic
components in standard applications (office equipment, telecommunication equipment,
measuring instruments, consumer electronic products, amusement equipment etc.). Those
customers intending to use a product in an application requiring extreme quality and reliability,
for example, in a highly specific application where the failure or misoperation of the product
could result in human injury or death (aircraft, spacevehicle, nuclear reactor control system,
traffic control system, automotive and transportation equipment, combustion equipment, safety
devices, life support system etc.) should first contact us.
6.We are making our continuous effort to improve the quality and reliability of our products, but
semiconductor products are likely to fail with certain probability. In order to prevent any injury to
persons or damages to property resulting from such failure, customers should be careful enough
to incorporate safety measures in their design, such as redundancy feature, firecontainment
feature and fail-safe feature. We do not assume any liability or responsibility for any loss or
damage arising from misuse or inappropriate use of the products.
7.Anti-radiation design is not implemented in the products described in this document.
8.Please contact Ricoh sales representatives should you have any questions or comments
concerning the products or the technical information.
RICOH COMPANY., LTD. Electronic Devices Company
■Ricoh awarded ISO 14001 certification.
■
Ricoh presented with the Japan Management Quality Award for 1999.
The Ricoh Group was awarded ISO 14001 certification, which is an international standard for
environmental management systems, at both its domestic and overseas production facilities.
Our current aim is to obtain ISO 14001 certification for all of our business offices.
Ricoh continually strives to promote customer satisfaction, and shares the achievements
of its management quality improvement program with people and society.
Ricoh completed the organization of the Lead-free production for all of our products.
After Apr. 1, 2006, we will ship out the lead free products only. Thus, all products that
will be shipped from now on comply with RoHS Directive.
http://www.ricoh.com/LSI/
RICOH COMPANY, LTD.
Electronic Devices Company
● Shin-Yokohama office (International Sales)
3-2-3, Shin-Yokohama, Kohoku-ku, Yokohama City, Kanagawa 222-8530, Japan
Phone: +81-45-477-1697 Fax: +81-45-477-1698
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RICOH COMPANY, LTD.
Electronic Devices Company
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Room109, 10F-1, No.51, Hengyang Rd., Taipei City, Taiwan (R.O.C.)
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